Enhancing the piezoelectric properties and thermal stability of PMN-PMS-PSZT high-power piezoelectric ceramics through defect engineering

Abstract

The development of high-power piezoelectric ceramics with superior piezoelectric properties and broad temperature usage ranges is vital for the thriving progress of electromechanical applications. However, achieving high piezoelectricity, high mechanical quality factor, and temperature stability often presents a trade-off. In this study, we present an advanced ceramic material with excellent high-power piezoelectric properties and superior temperature stability. The piezoelectric coefficient d33 reaches 348 pC N−1, the electromechanical coupling factor kp is 54%, the mechanical quality factor Qm is 1501, the dielectric loss tanδ is 0.35%, and the d33 variation is less than 10% within 25–210 °C in 0.05Pb(Mg1/3Nb2/3)O3-0.05Pb(Mn1/3Sb2/3)O3-0.9Pb0.95Sr0.05(Zr0.48Ti0.52)O3 ceramic. The excellent piezoelectricity is attributed to the enhancement of intrinsic ionic displacement and reversible domains wall motion because of symmetry-conforming short-range distribution of oxygen vacancy, while the high Qm is a result of increased domain size and oxygen vacancy. The outstanding temperature stability is related to the stable non-180°domains structure due to the oxygen vacancy pinning effect. These properties hold great potential for advanced applications, particularly for piezoelectric high-power applications requiring constant d33 over a broad temperature range.