A dimensional effect in the luminescence of a narrow-band silver sulfide semiconductor (with the width of the forbidden band E{sub g} = 0.9 eV) was discovered in 1977, when a luminescent method was used to study the nature and functions of the centers appearing as a result of sulfur sensitization of halogen-silver photographic emulsions. As is known, during the indicated sensitization, certain sulfur-containing compounds (usually, sodium thiosulfate) are introduced into a melted emulsion containing microcrystals of silver halide, thus promoting an increase in the photosensitivity of the emulsion layers. The reason for the observed increase in photosensitivity is the fact that during the interaction between sulfur-containing compounds and silver halide silver-sulfide centers arise on the surface of the emulsion microcrystals, which serve as deep traps for electrons and therefore determine the possibility for silver centers of latent image to be formed near them by a two-stage electron-ion mechanism. Measurement of the low-temperature (T = 77 K) luminescence spectra of different photographic emulsions containing AgBr, AgBr (I), or AgCl microcrystals made it possible to establish that the introduction of sulfur sensitizers (sodium thiosulfate or thiourea) into emulsion to increase its photosensitivity is accompanied by the appearance of new luminescence bands inmore » the near IR spectral region.« less