Bulk Substrate Research Articles

Performance of superconducting resonators suspended on SiN membranes

Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes are used in many fields including radiation detection using superconducting circuits, there has been less investigation into maximum membrane aspect ratios and achievable suspended device quality, metrics important to establish the applicable scope of the technique. Here, we investigate these metrics by fabricating superconducting coplanar waveguide resonators entirely atop thin (∼110 nm) SiN membranes, where the membrane's shortest length to thickness yields an aspect ratio of approximately 7.4×103. We compare these membrane resonators to on-substrate resonators on the same chip, finding similar internal quality factors ∼105 at single photon levels. Furthermore, we confirm that these membranes do not adversely affect resonator thermalization and conduct further materials characterization. By achieving high quality superconducting circuit devices fully suspended on thin SiN membranes, our results help expand the technique's scope to potential uses including incorporating higher aspect ratio membranes for device suspension and creating larger footprint, high impedance, and high quality devices.

Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration.

We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal semiconductor for power electronics. Moreover, 4H-SiC is an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films are desirable for substrate reuse and integration of the separated films. In this work, we utilize updated approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness crystal spalled to date. We achieve coherent spin control of neutral divacancy (VV0) qubit ensembles and measure a quasi-bulk spin T2 of 79.7 μs in the spalled films.

Acceptor-Induced Bulk Dielectric Loss in Superconducting Circuits on Silicon

The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a TLS bath that leads to an energy dissipation channel for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits and demonstrates the need for ultrahigh-purity substrates for next-generation superconducting quantum processors. Published by the American Physical Society 2024

Boosting the bifunctional catalytic activity of Co3O4 on silver and nickel substrates for the alkaline oxygen evolution and reduction reactions

Developing an efficient bifunctional catalyst for oxygen reduction (ORR) and evolution reactions (OER) is a crucial step for the wide commercialization of alkaline water electrolyzers. However, a proper assessment and comparison of various catalysts is still challenging due to the different catalyst substrates and loadings. In this work, Co3O4 spinel nanoparticles (NPs) were investigated as a bifunctional catalyst at different substrates of glassy carbon or Ag bulk substrate or Ni particles and with different loadings. For Co3O4 (800 µg cm-2)/Ag electrode, not only the overpotential for ORR was 50 mV lower than the bare Ag electrode, but also the OER overpotential was 40 mV lower than the sole Co3O4. Besides, less than 1% peroxide intermediate was detected during ORR using the rotating ring disc electrode (RRDE) method, suggesting a 4-electron O2 reduction. Tafel slopes of 70 and 60 mV dec‑1 at Co3O4/Ag were obtained for ORR and OER, respectively. The improved bifunctional activity could be attributed to a synergistic effect between Co3O4 and the Ag support. For the loading effect, it is revealed that the number of accessible sites of Ag surface decreases with increasing the Co3O4 loading, as evaluated from lead-underpotential deposition measurements. Interestingly, after running ORR/OER cycles, the surface area increased by 4–6 times. This surface roughening was also confirmed by SEM and EDX. The study was extended to Co3O4+Ni mixed catalyst to validate the effect of the support on this induced synergism. Hence, this work provides a simple route for designing potential effective catalytic interfaces and contributes to unravelling the influence of the substrate and loading on the catalyst activity for water electrolyzers.

UV-driven self-replenishing liquid-infused surface with promising anti-algal adhesion performance.

Slippery liquid-infused porous surfaces (SLIPSs) inspired by Nepenthes have attracted much attention owing to their potential application in various cutting-edge fields. However, the performance of SLIPSs is impeded by surface damage and lubricant depletion, thereby limiting their further application. Herein, a UV-responsive slippery surface (SMEMG) was fabricated by introducing the UV-responsive functional group coumarin into the polymer side chain through random copolymerization, followed by crosslinking, curing and impregnation with vegetable oil. The self-healing ability and lubricant self-replenishing performance of the SMEMG were investigated. The results show that upon exposure to UV light, the damaged surface substrate can be repaired through a reversible photodimerization reaction between coumarin groups. Meanwhile, the lubricant oil within the bulk of the SMEMG substrate can be extruded to the surface during the photodimerization reaction, facilitating the recovery of surface wettability. The SMEMG exhibited excellent self-cleaning and anti-algal properties as well as durability in a harsh environment, demonstrating its promising application in marine anti-fouling.

Structural, mechanical, corrosion, and early biological assessment of tantalum nitride coatings deposited by reactive HiTUS

This study examined microstructure, mechanical, corrosion properties and initial biological evaluation of the tantalum nitride (Ta-xN, where x – nitrogen flow rate during deposition) coatings prepared by reactive High Utilization Sputtering (HiTUS) at various nitrogen flow rates (x = 0, 2, 4, 6, and 8 sccm). Coatings were deposited on a novel Mg alloy (Mgbal.-Zn0.9-Y2.05-Al0.25 at. %) containing long-period stacking ordered (LPSO) phases. The coatings' structure was analyzed using a combination of SEM/FIB/TEM techniques, while XRD determined the phase composition. The mechanical parameters investigated included hardness, indentation modulus, and scratch behavior. The corrosion resistance of the coatings with respect to the bare substrate was evaluated in chloride-containing solutions. The wettability and early biological assessment of the coatings were also examined. The phase evolution strongly influenced the hardness and indentation modulus. The Ta-xN coatings made at x = 2 sccm nitrogen corresponding to HCP-Ta2N exhibited the highest hardness and indentation modulus. An increase in nitrogen flow rates resulted in the formation of FCC structure with slightly reduced hardness and indentation modulus. In addition, Ta-xN coatings (x ≥ 4sccm) showed superior corrosion resistance compared to BCC structured α-Ta, enhancing the corrosion performance of the Mg-LPSO bulk substrate. Finally, at the early incubation stage (24 h), L929 fibroblasts exhibited better cell attachment to the Ta-6N coating than to the bare Mg-LPSO substrate.

Bulk substrate based reconfigurable field-effect transistor and its single event effect performance

Bulk substrate based reconfigurable field-effect transistor and its single event effect performance

(Invited) Advanced Electronic Characterization of Wide Band Gap Semiconductor Defects at the Nanoscale

Wide bandgap materials such as gallium nitride (GaN) and gallium oxide (Ga2O3) are currently under development for realizing next-generation high power electronic devices beyond silicon. Vertical structures produced through homoepitaxial growth are preferred for scaling high-voltage devices, which places strict demands on the quality of bulk substrates. In particular, extended defects can propagate during epitaxial growth into the active areas of devices. Therefore, there is a need for identifying defects and determining their electronic properties at relevant nano- to micro- scale dimensions in order to disentangle their combined effects on macroscopic devices. Here, we use a combination of laser-based photoemission electron microscopy (PEEM) and electrical atomic force microscopy (AFM) methodologies to investigate the local electronic properties of surface defects in epitaxially grown GaN and β-Ga2O3. PEEM is a non-scanning electron microscopy technique where photoelectrons emitted by a surface illuminated by deep-ultraviolet light are imaged with nanometer-scale spatial resolution. The emitted photoelectrons are sensitive to the local electronic structure, making PEEM a powerful tool for evaluating electronic changes at length scales relevant for devices, and provides valuable information for identifying “killer” defects which must be minimized during device growth and processing.The difficulty in producing large, low dislocation density bulk GaN substrates has led to longstanding issues with leakage current in diodes and transistor devices. We identify surface defects with different electronic properties in GaN epitaxy on different substrates using PEEM. We observe star-shaped defects on strain-patterned GaN substrates and elongated dark patches on growth ridges on ammonothermally grown GaN substrates. In both cases, the observed electronic changes in PEEM correlate directly with local electrical AFM measurements, revealing that local changes in the electronic structure at these defects results in altered electrical conduction.In contrast, the development of large bulk Ga2O3 substrates has been more successful, yet the identification and influence of various defects on device performance is still largely unknown at this point. The topography of β-Ga2O3 epitaxy varies widely between growth methods and substrate orientations. For example, β-Ga2O3 by hydride vapor physical epitaxy lacks fine structure, yet has surface defects that regularly appear in parallel orientations. In β-Ga2O3 grown on different substrate orientations, we observe variations in the surface electronic properties using PEEM. For certain substrate orientations and growths, we find nanoscale variations in doping, while other orientations display micron-scale electronic inhomogeneity and defects. Our results demonstrate that laser-based PEEM can be a powerful tool for detecting electrically active defects, as well as evaluating the nanoscale electronic homogeneity of wide bandgap semiconductors.

Vector substrate-based Josephson junctions

We present a way to fabricate bicrystal Josephson junctions of high-Tc cuprate superconductors that are not grown on bulk bicrystalline substrates. Based on vector substrate technology, this approach makes use of a few tens-of-nanometer-thick bicrystalline membranes transferred onto conventional substrates. We demonstrate 24° [001]-tilt YBa2Cu3O7−x Josephson junctions fabricated on sapphire single crystals by utilizing 10-nm-thick bicrystalline SrTiO3 membranes. This technique allows one to manufacture bicrystalline Josephson junctions of high-Tc superconductors on a large variety of bulk substrate materials, providing distinctive degrees of freedom in designing the junctions and their electronic properties. Furthermore, it offers the capability to replace the fabrication of bulk bicrystalline substrates with thin-film growth methods.

Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

Three scandium aluminum nitride (ScAlN) thin films with different Sc compositions of 6%, 10%, and 14% were heteroepitaxially grown on n-type GaN bulk substrates by a low-temperature sputtering method. Atomically flat and smooth surfaces were observed by atomic force microscopy. The ScAlN films were coherently grown on GaN, and the c-axis lattice constants increased with increase in the Sc composition, confirmed by x-ray diffraction. The refractive index and the extinction coefficient of ScAlN were extracted by variable angle spectroscopic ellipsometry. The refractive index slightly increased and the extinction coefficient showed red shift with increase in the Sc composition. The optical bandgap of the ScAlN films was also extracted, which slightly shrunk with increase in the Sc composition.

Radiation effects on multi-channel Forksheet-FET and Nanosheet-FET considering the bottom dielectric isolation scheme

This study analyzes the single-event transient (SET) characteristics of alpha particles on multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D TCAD simulations. The study investigates the differences in SET responses based on the energy and incident position of incoming alpha particles, considering the structural variances between Forksheet-FET and Nanosheet-FET, as well as the presence or absence of bottom dielectric isolation (BDI) in the fabrication process. Specifically, the introduction of BDI is observed to significantly suppress the voltage drop caused by ‘unintended' current, as it can block the substantial electron-hole pairs (EHP) generated by injected alpha particles in the bulk substrate from reaching the FET terminals. Furthermore, it was confirmed that the size of abnormal current decreases as the energy of the injected alpha particle increases. Additionally, evaluating the response to SET based on the fundamental logic circuit, the CMOS inverter, revealed relatively small abnormal voltage drops for both Forksheet and Nanosheet when BDI was applied, confirming high immunity to radiation effects. Moreover, it can be observed that the application of BDI enhances reliability from a memory perspective by effectively suppressing voltage flips in the SRAM's cross-coupled latch circuit.

Interfacial Engineering of Soft Matter Substrates by Solid-State Polymer Adsorption.

Polymer coating to substrates alters surface chemistry and imparts bulk material functionalities with a minute thickness, even in nanoscale. Specific surface modification of a substate usually requires an active substrate that, e.g., undergoes a chemical reaction with the modifying species. Here, we present a generic method for surface modification, namely, solid-state adsorption, occurring purely by entropic strive. Formed by heating above the melting point or glass transition and subsequent rinsing of the excess polymer, the emerging ultrathin (<10 nm) layers are known in fundamental polymer physics but have never been utilized as building blocks for materials and they have never been explored on soft matter substrates. We show with model surfaces as well as bulk substrates, how solid-state adsorption of common polymers, such as polystyrene and poly(lactic acid), can be applied on soft, cellulose-based substrates. Our study showcases the versatility of solid-state adsorption across various polymer/substrate systems. Specifically, we achieve proof-of-concept hydrophobization on flexible cellulosic substrates, maintaining irreversible and miniscule adsorption yet with nearly 100% coverage without compromising the bulk material properties. The method can be considered generic for all polymers whose Tg and Tm are below those of the to-be-coated adsorbed layer, and whose integrity can withstand the solvent leaching conditions. Its full potential has broad implications for diverse materials systems where surface coatings play an important role, such as packaging, foldable electronics, or membrane technology.

Promoting ultrasonic cavitation via Negative-Curvature nanoparticles

It is a challenge to study the nucleation of cavitation bubbles, which critically depends on nanoscale morphological features. Our recent advances in synthesizing colloidal negative-curvature nanoparticles (NGC-NPs) offer a rare opportunity, in comparison to the conventional studies of bulk substrates, where it is difficult to obtain consistent and well-defined surface features. In order to quantitatively assess their effects, we exploit the radical-induced color change of [Fe(SCN)6]3−, which turned out to be a more convenient method than the bending of AgNWs and the fluorescence-based methods. We show that the NGC-NPs outperform positive-curvature nanoparticles (PSC-NPs) and homogeneous nucleation, in terms of promoting cavitation. The NGC-NPs provide a higher percentage of gas–solid interface, and thus reduces the activation barrier during the critical stage of bubble nucleation. This leads a higher probability of cavitation and transforms more energy from ultrasonication to radical formation and shockwaves.

Field Emission from Carbon Nanotubes on Titanium Nitride-Coated Planar and 3D-Printed Substrates.

Carbon nanotubes (CNTs) are well known for their outstanding field emission (FE) performance, facilitated by their unique combination of electrical, mechanical, and thermal properties. However, if the substrate of choice is a poor conductor, the electron supply towards the CNTs can be limited, restricting the FE current. Furthermore, ineffective heat dissipation can lead to emitter-substrate bond degradation, shortening the field emitters' lifetime. Herein, temperature-stable titanium nitride (TiN) was deposited by plasma-enhanced atomic layer deposition (PEALD) on different substrate types prior to the CNT growth. A turn-on field reduction of up to 59% was found for the emitters that were generated on TiN-coated bulk substrates instead of on pristine ones. This observation was attributed exclusively to the TiN layer as no significant change in the emitter morphology could be identified. The fabrication route and, consequently, improved FE properties were transferred from bulk substrates to free-standing, electrically insulating nanomembranes. Moreover, 3D-printed, polymeric microstructures were overcoated by atomic layer deposition (ALD) employing its high conformality. The results of our approach by combining ALD with CNT growth could assist the future fabrication of highly efficient field emitters on 3D scaffold structures regardless of the substrate material.

Silicon flow stop frame for encapsulation of CMOS microsensor chips by wet anisotropic etching in KOH

Bulk micromachining in silicon is governed by the etching process where anisotropic (wet) etching in KOH can yield complex structures beyond that achievable with isotropic (dry) etching techniques. One example is the miniaturised frame reported herein with an area of 2.9 to 7.5 mm2, walls that are 1/10 mm thick, a height of 525 μm equipped with sloping walls that takes advantage of the 54.7° angle of the (111) planes to the horizontal (100) top surface of the wafer. Convex corners liable to damage are protected by sacrificial bridge structures which are etched thin to a point where the frame can be easily removed from the bulk substrate material. Frames made from isotropic (dry) etching processes have been made for comparison. Although the frame structure has different applications in microfabrication, the intended use is a flow stop barrier preventing liquid resins from entering the active area of a CMOS chemical sensor chip during encapsulation for use in aqueous or gaseous media. Beyond this specific proof-of-concept, the strategy is expected to be of general interest for all who treasures KOH etching and wants to explore new avenues based on this process.

Deformation behavior of the hybrid S-phase layer formed on a stainless-steel substrate by thermochemical heat treatment under mechanical loading

The hybrid S-phase layer was formed on the surface of an austenitic stainless steel by the thermomechanical heat treatment, which was carried out at a low temperature (475 °C). The thickness of the layer depends on the methane (CH4) gas content in the heat treatment chamber. The microstructure of the layer contains plenty of microstructural defects, such as slip bands, twins, stacking faults, and entangle dislocations, as confirmed by detail electron microscopy investigations. The S-phase layers were subjected to nanoindentation and nanoscratching to investigate their micro-mechanical properties and deformation aspects; and compared against the substrate (bulk austenitic) material. This layer exhibit about 6 folds increase in hardness (11.65–14.65 GPa) to that of bulk austenitic (2.33 GPa), whereas the Young's modulus increased by 1.70 times (124.84–142.34 GPa for the S phase layers and 83.25 GPa for bulk material). This increase in hardness caused relatively less plastic deformation in the layer, compared to bulk austenitic under identical loading conditions. This induced different sub-surface deformation aspects, not only in terms of deformation depth, but also in microstructural aspects, as reviled through a transmission electron microscopy investigation on the residual nanoindentation imprint and scratch tracks.

How Surface and Substrate Chemistry Affect Slide Electrification.

When water droplets move over a hydrophobic surface, they and the surface become oppositely charged by what is known as slide electrification. This effect can be used to generate electricity, but the physical and especially the chemical processes that cause droplet charging are still poorly understood. The most likely process is that at the base of the droplet, an electric double layer forms, and the interfacial charge remains on the surface behind the three-phase contact line. Here, we investigate the influence of the chemistry of surface (coating) and bulk (substrate) on the slide electrification. We measured the charge of a series of droplets sliding over hydrophobically coated (1-5 nm thickness) glass substrates. Within a series, the charge of the droplet decreases with the increasing droplet number and reaches a constant value after about 50 droplets (saturated state). We show that the charge of the first droplet depends on both coating and substrate chemistry. For a fully fluorinated or fully hydrogenated monolayer on glass, the influence of the substrate on the charge of the first droplet is negligible. In the saturated state, the chemistry of the substrate dominates. Charge separation can be considered as an acid base reaction between the ions of water and the surface. By exploiting the acidity (Pearson hardness) of elements such as aluminum, magnesium, or sodium, a positive saturated charge can be obtained by the counter charge remaining on the surface. With this knowledge, the droplet charge can be manipulated by the chemistry of the substrate.

An oligopeptide permease, OppABCD, requires an iron-sulfur cluster domain for functionality.

Oligopeptide permease, OppABCD, belongs to the type I ABC transporter family. Its role is to import oligopeptides into bacteria for nutrient uptake and to modulate the host immune response. OppABCD consists of a cluster C substrate-binding protein (SBP), OppA, membrane-spanning OppB and OppC subunits, and an ATPase, OppD, that contains two nucleotide-binding domains (NBDs). Here, using cryo-electron microscopy, we determined the high-resolution structures of Mycobacterium tuberculosis OppABCD in the resting state, oligopeptide-bound pre-translocation state, AMPPNP-bound pre-catalytic intermediate state and ATP-bound catalytic intermediate state. The structures show an assembly of a cluster C SBP with its ABC translocator and a functionally required [4Fe-4S] cluster-binding domain in OppD. Moreover, the ATP-bound OppABCD structure has an outward-occluded conformation, although no substrate was observed in the transmembrane cavity. Here, we reveal an oligopeptide recognition and translocation mechanism of OppABCD, which provides a perspective on how this and other type I ABC importers facilitate bulk substrate transfer across the lipid bilayer.

Thermal conductivity of urban and artificial soils: methodological aspects and mathematical modeling

There are various methods for experimental determination of the thermal conductivity dependence on soil moisture and substrates. The influence of the sample structure (monolith, bulk sample), sample temperature, the method of installing the probe into the sample on the obtained readings of the TEMPOS device was studied and methodological recommendations were proposed. The dependence of thermal conductivity of soils bulk samples and substrates on moisture is shown. The spread of thermal conductivity values in the moisture range from hygroscopic to full moisture capacity for soddy-podzolic soil is 0.229–1.430 W/(m*K), for peat – 0.250–0.521 W/(m*K), for sand – 0.280–2.605 W/(m*K), for a mixture – 0.234–1.568 W/(m*K). ). The influence of properties such as density, particle size distribution, specific surface area, organic matter content, salinity affected thermal properties to a lesser extent. The established patterns can be used to calculate the temperature regime of soils in solving a number of applied problems related to the construction of special soil objects, for example, when creating urban soil structures. For this, it is necessary either to determine the thermal conductivity experimentally, or to calculate it, using the physical parameters of soils and substrates. The first method is labor-consuming, the second is less accurate. As an example, the equations available for work in the HYDRUS-1D (Chang–Horton and Campbell) model are used. These equations either overestimate the thermal conductivity in the area of high substrate humidity, or underestimate the thermal conductivity in the area of low substrate humidity (sand, loam, peat and a mixture based on them).

S-band acoustoelectric amplifier in an InGaAs-AlScN-SiC architecture

Here, we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin Al0.58Sc0.42N film grown directly on a 4H-SiC substrate with an ultra-thin In0.53Ga0.47As epitaxial film heterogeneously integrated onto the surface of the Al0.58Sc0.42N. The aluminum scandium nitride film grown directly on silicon carbide enables a thin (∼850 nm thick) piezoelectric film to be deposited on a thermally conductive bulk substrate (370 W/m K for 4H-SiC); the high thermal conductivity of the substrate, large mobility of the semiconductor (∼7000 cm2/V s), and low carrier concentration (∼5 × 1015 cm−3) yield low self-heating. A Sezawa mode with optimal overlap between the peak of its evanescent electric field and the semiconductor charge carriers is supported. The high velocity of the heterostructure materials allows us to operate the Sezawa mode amplifier at 3.05 GHz, demonstrating a gain of 500 dB/cm (40 dB in 800 μm). Additionally, a terminal end-to-end radio frequency gain of 7.7 dB and a nonreciprocal transmission of 52.6 dB are achieved with a dissipated DC power of 2.3 mW. The power added efficiency and acoustic noise figure are also characterized.