Substrate Bias Research Articles

Microstructure and stress evolution of W nanofilms prepared by arc ion plating under different deposition time and substrate bias

Microstructure and stress evolution of W nanofilms prepared by arc ion plating under different deposition time and substrate bias

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Abstract Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm−1) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of Gunn oscillations in fabricated devices has been observed yet. In order to avoid the avalanche, we propose the addition of a Schottky substrate terminal, which, by means of Monte Carlo simulations, has been confirmed to be able to suppress such not-desired leakage current when applying a negative substrate bias. When the substrate bias is positive, impact ionization is also reduced due to the lower electric field at the hotspot, but a vertical cathode-substrate current degrades the device operation. In order to avoid such current, we propose the use a MIS configuration for the substrate contact, which is the optimal solution.

Design and Scalable Synthesis of Thermochromic VO2-Based Coatings for Energy-Saving Smart Windows with Exceptional Optical Performance.

We report strongly thermochromic YSZ/V0.855W0.018Sr0.127O2/SiO2 coatings, where YSZ is Y-stabilized ZrO2, prepared by using a scalable deposition technique on standard glass at a low substrate temperature of 320 °C and without any substrate bias voltage. The coatings exhibit a transition temperature of 22 °C with an integral luminous transmittance of 63.7% (low-temperature state) and 60.7% (high-temperature state) and a modulation of the solar energy transmittance of 11.2%. Such a combination of properties, together with the low deposition temperature, fulfills the requirements for large-scale implementation on building glass and has not been reported yet. Reactive high-power impulse magnetron sputtering with a pulsed O2 flow feedback control allows us to prepare crystalline W and Sr codoped VO2 of the correct stoichiometry. The W doping of VO2 decreases the transition temperature, while the Sr doping of VO2 increases the luminous transmittance significantly. A coating design utilizing second-order interference in two antireflection layers is used to maximize both the integral luminous transmittance and the modulation of the solar energy transmittance. A compact crystalline structure of the bottom YSZ antireflection layer further improves the VO2 crystallinity, while the top SiO2 antireflection layer provides also the mechanical and environmental protection for the V0.855W0.018Sr0.127O2 layer.

Advancements in biomedical coatings: A comprehensive review of DC magnetron sputtering on Ti–6Al–4V alloy

This study investigates the application of DC magnetron sputtering (MS) technology for producing TiN and ion-substituted Ca-P coatings on dental implant materials, demonstrating ultimate tensile strength (UTS) of 887 MPa, a modulus of elasticity of 11.3 × 106 MPa. The influence of various physical vapor deposition (PVD-MS) parameters—such as substrate temperature, post-heat treatment, deposition duration, discharge power, and bias voltage—on the characteristics of these coatings is examined. The research evaluates the advantages and limitations of PVD-MS in fabricating TiN and Ca-P coatings, with an emphasis on their impact on surface topography and chemical composition, which are critical factors influencing cellular behavior. The study reveals that while ion-substituted HA coatings can enhance cell adhesion, they may also exhibit cytotoxic effects, potentially limiting cell growth. It compares osteogenic cell proliferation rates between low-crystalline HA coatings and highly crystalline variants on Ti-based substrates, highlighting significant performance disparities. Additionally, PVD-MS demonstrates robust adhesion capabilities and facilitates the incorporation of therapeutic ions, effectively replicating bioapatite properties. The addition of coating on the substrate promotes additional strengthening mechanisms of the layers, leading to improved wear resistance compared to an alloyed substrate. Estimated values for hardness range between 7.2 and 8.4 GPa, and for Young's modulus, they range from 126 to 162 GPa. The study highlights the potential of PVD-MS in creating nanostructured Ca-P coatings on biodegradable metals, alloys, and polymeric biomaterials. This technology improves corrosion resistance, biocompatibility, chemical stability, wear resistance, and overall performance in various biomedical applications.

Enhanced adhesion and wear resistance of DLC films on AZ31 alloy achieved with high bias voltage

Diamond-like carbon (DLC) films exhibiting high adhesion and exceptional wear resistance were successfully applied onto the AZ31 surface without a adhesive layer. The structural features of the film were examined utilizing Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Raman spectroscopy. Mechanical properties were evaluated through Nano-indentation testing, while adhesion was evaluated using a scratch tester. Residual stress was determined by Stoney's equation. The results indicate that utilizing a high substrate bias ranging from −500 to −800 V, results in the presence of multiple craters and dislocations, which contribute to the enhancement of high residual compressive stress and hardness in the DLC film. The heightened compressive stress effectively embeds carbon atoms into the surface of the soft AZ31, creating an interfacial layer that significantly improves adhesion and wear resistance of the film. In contrast, at moderate bias levels with a range from −300 to −500 V, an increase in substrate temperature leads to the expansion and discontinuation of adjacent layers that decreases the mechanical properties, adhesion, and wear resistance of the film. When at low bias levels between 0 and -300 V, the hardness, crack resistance, residual stress, and wear resistance all increase with increasing of bias. Additionally, in this work, the mechanisms of adhesion and wear for the biased film are analyzed.

Corrosion resistance of HiPIMS tungsten and tungsten-aluminium coatings in contact with liquid Sn

Pure‑tungsten and tungsten-aluminium films deposited by high power impulse magnetron sputtering (HiPIMS) on copper‑chromium‑zirconium substrates were investigated as protective coatings against liquid tin corrosion, a critical issue for nuclear fusion applications. The growth of pure‑tungsten coatings was controlled by using a negative substrate bias synchronized to the HiPIMS pulse onset, resulting in columnar films with various degree of compactness and crystallinity according to the set bias amplitude (0, 400 and 800 V). Differently, the co-sputtering of W and Al favored the formation of an amorphous layer with a compact morphology. During liquid tin corrosion experiments at 400 °C for up to 600 min, all produced coatings were not dissolved, but different protective performances were observed after localized liquid tin interaction. Pure-W coated samples suffered from tin penetration after brittle failure of the protective layer. On the contrary, under the same experimental condition, WAl coatings proved to be effective in limiting liquid tin attack.

Si modified aluminide coatings on a Ni-base superalloy prepared using Al-Si plasma irradiation: Growth mechanism and oxidation behavior

The growth mechanism and high temperature oxidation behavior of Si-modified aluminide coatings prepared on a Ni-base single crystal superalloy DD98M using vacuum plasma irradiation were investigated. The growth of the coatings under plasma irradiation was much faster than thermal diffusion-controlled process. The coatings comprised an aluminide outer zone, where Si existed as solid-solute, and an inter-diffusion zone where silicide particles precipitated in aluminide matrix. The crystalline structures of the aluminides were found dependent on the irradiation power. β-NiAl was formed at higher irradiation power while δ-Ni2Al3 was formed at lower irradiation power. The β-NiAl coatings had higher oxidation resistance than the δ-Ni2Al3 ones usually, with an exception of one β coating which was prepared at the highest substrate bias which underwent severe internal oxidation. The presence of numerous voids in the oxide scale of Ni2Al3 may be related to the large number of Kirkendall voids present in the as-prepared coating.

Enhancement of copper nanoparticle yield in magnetron sputter inert gas condensation by applying substrate bias voltage and its influence on thin film morphology

Large-scale synthesis of high-purity nanoparticles is an intense topic of scientific research, with magnetron sputter inert gas condensation recognized as a promising, environmentally friendly technique avoiding wet chemical processes. This study explores the deposition of size-selected nanoparticles under varied substrate bias voltages and reports on a consequent increase in deposition rates up to 32 %. These alterations in substrate bias voltage induce a progressive change in the morphology of the resulting nanoparticle thin films, attributable to the increased kinetic energy of the nanoparticles. Comprehensive characterization via quadrupole mass spectroscopy of the nanoparticle flux, scanning electron microscopy, X-ray photoelectron spectroscopy, and low-energy ion scattering spectroscopy of the deposited nanoparticles corroborates the enhanced nanoparticle yield associated with increased substrate bias voltage. These findings signify a methodological advancement, enhancing the efficiency of magnetron sputter inert gas condensation and moving the technology a step further towards feasible industrial production.

Effects of substrate temperature and bias voltage on mechanical and tribological properties of cosputtered (TiZrHfTa)Nx films

This study investigated the effects of substrate temperature and bias voltage on the mechanical and tribological properties of cosputtered (TiZrHfTa)Nx films. A substrate temperature ranging from room temperature to 400 °C, and a bias voltage ranging from 0 to −150 V were selected as the sputtering variables. A mixture gas with a nitrogen flow ratio (fN2 = N2/[N2 + Ar]) of 0.2 was used to fabricate nitride films. Nanoindentation and wear tests were conducted to assess the performance of the fabricated (TiZrHfTa)Nx films, which formed a single face-centered cubic structure. Increasing the substrate temperature resulted in grain growth, lattice shrinkage, and nonsignificant improvements in mechanical properties. Applying a bias voltage of −150 V to the substrate increased the hardness of the fabricated film to a peak of 32.7 GPa compared with that of 29.3 GPa for the film prepared in an electronically grounded state. The (Ti0.24Zr0.22Hf0.19Ta0.35)N0.66 film prepared at a bias voltage of 0 V and substrate temperature of 400 °C exhibited the optimal combination of mechanical and tribological properties (hardness, 30.0 GPa; elastic modulus, 325 GPa; and wear rate, 1.16 × 10−5 mm3/Nm).

Effect of Substrate Bias on the Structure and Tribological Performance of (AlTiVCrNb)CxNy Coatings Deposited via Graphite Co-Sputtering

In the existing literature, there are few studies on the effect of deposition bias on the tribological properties of carbon-doped high-entropy alloy coatings. In order to further study the effect of the deposition bias on the properties of coatings, (AlTiVCrNb)CxNy coatings were deposited via unbalanced RF magnetron sputtering. The microstructure and tribological properties of carbon-doped high-entropy alloy ceramic coatings under different deposition biases were studied. The composition, morphology, crystal structure, and chemical morphology of each element of the coating were analyzed using scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The hardness, elastic modulus, friction, and wear properties of the coating were further characterized using a nanoindentation instrument, reciprocating sliding friction, a wear tester, and a white light interferometer. The coating density reached the optimal level when the deposition bias value was 90 V. The hardness and elastic modulus of the (AlTiVCrNb)CxNy coating increased first and then decreased with an increase in deposition bias, and the maximum hardness was 23.98 GPa. When the deposition bias was 90 V, the coating formed a good-quality carbon transfer film on the surface of the counterbody due to sp2 clusters during the friction and wear process. The average friction coefficient and wear rate of the (AlTiVCrNb)CxNy coating were the lowest, 0.185 and 1.6 × 10−7 mm3/N·m, respectively. The microstructure, mechanical properties, and tribological performance of the (AlTiVCrNb)CxNy coating were greatly affected by the change in deposition bias, and an (AlTiVCrNb)CxNy coating with excellent structure and friction properties could be prepared using graphite co-sputtering.

Design of CMOS Based LC-Voltage Control Oscillator Using Substrate Bias Effect and Current Mirror Technique

Design of CMOS Based LC-Voltage Control Oscillator Using Substrate Bias Effect and Current Mirror Technique

Quantitative characterization on influence of surface particles on corrosion behavior of multiarc ion plated CrAlN coatings

Surface particles on multiarc ion plated coatings are common defects, and their influence on the service performance of coatings is rarely defined. The CrAlN coatings were deposited on the tungsten steel (YG8) substrates using multiarc ion plating. The effects of the substrate bias voltages and nitrogen flow rates on the quantity of the surface particles were investigated, and the influence of the surface particles on the corrosion resistance of the coatings is quantitatively characterized. The morphology of surface particles was characterized using a scanning electron microscope. The quantity of the surface particles was counted by image software. The corrosion resistance of the coatings was evaluated through an electrochemical workstation. The results show that the quantity of surface particles decreased with the increase in the substrate bias voltage and nitrogen flow rate. The corrosion resistance of the coatings showed a positive correlation with the quantity of the surface particles, and it decreased dramatically when the quantity of the surface particles exceeded 111/10 000 μm2. The corrosion mechanism of the coatings was attributed to the defect-induced pitting corrosion.

Deposition of highly crystalline AlScN thin films using synchronized high-power impulse magnetron sputtering: From combinatorial screening to piezoelectric devices

With the integration of 5G in day-to-day devices and the foreseeable 6G revolution, demand for advanced radio frequency (RF) microelectromechanical systems (MEMS) is growing. Aluminum scandium nitride (AlScN) has emerged as the material of choice for many of those applications due to its superior piezoelectric and electromechanical properties compared to aluminum nitride (AlN). However, synthesizing high-quality, textured AlScN thin films is challenging. Alloying of Sc in AlN induces structural frustration leading to strain, defects, disoriented grains, and disrupted crystal symmetry during growth. Higher deposition temperatures, while improving crystalline quality, risk undesirable phase precipitation and limit industrial sustainability. In addition, future MEMS technologies also demand conformal and textured coatings over diverse topographies. Addressing these challenges collectively requires new and innovative synthesis approaches. In this study, we investigate the feasibility of ionized physical vapor deposition to deposit highly oriented AlScN films with minimal defects at lower temperatures. To this end, we employ combinations of different deposition approaches, such as metal-ion synchronized (MIS) high-power impulse magnetron sputtering (HiPIMS). Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we selectively bombard the growing film with Al and/or Sc ions to enhance the adatom mobility at low temperatures while simultaneously providing the ability to tune stress and coat complex structures conformally. The nonequilibrium solubility of Sc in wurtzite AlN under different conditions is investigated using a combinatorial deposition approach. Promising candidates with ∼20% Sc composition are isolated and characterized for crystallinity and residual stress. Disoriented grains, a significant issue in growing AlScN films, are observed through atomic force microscopy and found to be completely removed by substrate rotation and application of substrate biasing. The measured piezoelectric response of the films with approximately 20% Sc concentration ranges from 6.3 to 8.8 pm/V, in line with density functional theory predictions and experimentally reported values for films deposited in a production tool with coplanar geometry. At the same time, MIS-HiPIMS-deposited films offer unique properties and flexibility to tune their stress state and structural properties, thus presenting exciting opportunities for the fabrication of advanced RF filters and next-generation MEMS devices. Published by the American Physical Society 2024

Fracture strain improving via structural austenitic stainless steel-coated 22MnB5 plates

A total of 316 austenitic stainless steel (ASS) coatings were deposited on 22MnB5 press-hardening steel plates by varying the substrate bias voltages using a magnetron sputtering technique and quenched in a flat mold with cooling water. The substrate bias current and ion-bombardment energy densities increased up to 0.5 mA/mm2 and 50 J/mm2 at a high voltage of −100 V, and, therefore, the variations in the coatings’ morphologies were owing to the increases in the ion bombardment. The porous bulk pattern appeared in the quenched ASS coating at −100 V, clearly different from the porous columnar structure of the others at −50 and −75 V. The γ-Fe and α-Fe phases were observed from the diffraction peaks, presented the ASS coating and 22MnB5 substrate, respectively. There was no intermetallic compound (IMC) peak detected. In addition, the diffusion layer of the quenched ASS-coated plate was observed, in which its morphology was different from the quenched martensite (M) plate, and proved to be the α-Fe microstructure by the very low α-Fe peak at the standard (110) position. The bright image of TEM and the select area electron diffraction pattern indicated the nanostructure of the quenched ASS coating. The nanohardness of the ASS coating, diffusion layer, and M plate (7.36, 3.60, and 6.25 GPa, respectively) was detected, indirectly proving an α-Fe structure of the diffusion layer. The fracture angles of the 316-coated plates significantly improved from 51.82° at −50 V, 53.77° at −75 V to 57.38° at −100 V, as the ASS structure changed to be porous bulk pattern. The clearance of IMC, coating’s porous bulk pattern, and the low hardness α-Fe diffusion layer benefited for the fracture strain by lengthening the pathway of the crack’s development and blocking the further crack’s propagation, respectively.

Exploring the Performance of Hall Sensor With Substrate Bias Modulation in SOI Process

Exploring the Performance of Hall Sensor With Substrate Bias Modulation in SOI Process

Photodetector Devices: Investigation of ZnO Thin Films Fabricated via SILAR Technique on Various Substrates:

The synthesis of photodetectors for ZnO nanostructure films on various substrates, including p-type (100) silicon (Si), and porous silicon (pSi), has been achieved through the utilization of a straightforward technique known as the successive ionic layer adsorption and reaction (SILAR) method. To analyze the optical properties, surface morphology, and crystal structure of the ZnO layers, UV-Vis spectrometers, field emission scanning electron microscopes (FESEM), and X-ray diffraction (XRD) were employed. The characterization of the ZnO samples revealed that the number of SILAR cycles has a significant impact on the morphology and optical band gap of the synthesized layer. The Fourier-transform infrared (FTIR) spectrum successfully detected the distinctive extended vibration mode of ZnO. By conducting 20 cycles, high-quality hexagonal ZnO was obtained. The responsivity of the planar ZnO on silicon (ZnO/Si) and ZnO on the porous silicon (ZnO/pSi) surface exhibited variations depending on the substrate surface and bias voltage. The results indicated that the (ZnO/pSi) heterojunction demonstrated a high response in the visible range (350–850 nm) at a low bias voltage. On the other hand, the (ZnO/Si) photodetector displayed a high sensitivity of 666.66% at a low voltage of 1V in comparison to the (ZnO/pSi) photodetector, which exhibited a sensitivity of 483%.

Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor

In this work, we report on Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of SiNx films using Diiodosilane (DIS) precursor and N2-H2 plasma. Systematic studies as a function of DIS dosing time, plasma duration, plasma composition and deposition temperature are investigated. The material properties have been studied using X-ray photoelectron spectroscopy (XPS), X-Ray Reflectometry (XRR), Atomic Force Microscopy (AFM) and High-Resolution Transmission Electron Microscopy (HR-TEM). The optimal deposition parameters for achieving high-quality SiNx with a high growth per cycle (GPC) are first determined. We show that DIS offers a wide temperature window for SiNx deposition starting from 110 °C up to 300 °C, paving the way for a large choice of SiN-based applications. The impact of substrate biasing on SiNx film deposition and properties is also investigated. We show that high ion energies during the nitridation step can cause surface damage and void formation, thus affecting the SiNx quality. Overall, these results highlight the importance of this novel precursor for growing SiNx using PE-ALD and the possible swapping of the material properties by fine control of the substrate biasing, which can help to go far beyond the existing SiNx limitations.

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Time-dependent conduction in epitaxial superlattice (SL) strain relief layers of GaN high electron mobility transistors on 200 mm engineered substrates with a poly-AlN core was observed and analyzed. This phenomenon occurs when the devices were operated with substrate bias of ∼−300 V for 101–103 s. The formation of the conduction path is related to trap-assisted leakage through the SLs on the engineered substrates; de-trapped carriers spread out vertically and laterally within a portion of the SLs, leading to a higher electrical field across the rest of the layers. This conduction mechanism may be hidden during the devices' normal operation (target 650–1200 V). It could lead to undesired effects during the operation of the devices, such as a time-dependent dynamic Ron. More resistive SLs will potentially reduce the impact of this phenomenon.

Optimizing substrate bias voltage to improve mechanical and tribological properties of ductile FeCoNiCu high entropy alloy coatings with FCC structure

Conventional hard coatings are limited in their tribological applications due to their high brittleness. High-entropy alloy (HEA) coatings, which combine high toughness and hardness, represent a new class of tribological coatings with great potential. The microstructure and stress state of HEA coatings can be significantly affected by the deposition parameters of magnetron sputtering, which can regulate their mechanical and tribological properties. In this study, DC magnetron sputtering with varying substrate bias voltages was used to deposit FeCoNiCu HEA coatings with an FCC single phase structure on 316 stainless steel. The microstructure, mechanical, and tribological properties of these coatings were studied in detail. The residual tensile stress of the coatings decreases, while toughness and hardness increase as the bias voltage increases. The coatings exhibited optimal toughness, highest hardness (11.3 GPa), and the lowest wear rate (as low as 6.01 × 10−5 mm3/N·m) when the bias voltage was set to −200 V. The formation of a metal oxide adhesion layer during friction improved the tribological properties of the coatings. This study demonstrates that optimizing the deposition bias voltage is an effective way to improve the mechanical and tribological properties of high-entropy, face-centered cubic alloy coatings, which are intrinsically tough and ductile.

Electromagnetically Enhanced Atomic Layer Deposition for Modification of Thin Film Properties through in Situ Substrate Biasing

Atomic layer deposition (ALD) is broadly used for thin, conformal film growth in microelectronics, photovoltaics, and other industries. Enhanced film properties are required for advancement of device performance. Use of electrical current in situ during deposition to drive material properties of films produced by ALD toward a desired state (such as higher conductivity) will increase the utility of thin film materials for device applications. In an ALD reactor bias is applied directly to substrates during ALD precursor pulses. Higher conductivity and growth rates were observed for samples grown with ALD enhanced by in situ substrate biasing. Thicknesses were determined via spectroscopic ellipsometry, uniformity was investigated by atomic force microscopy, and crystallinity by x-ray diffraction. These systems are computationally investigated to probe the mechanism by which the ALD processes are enhanced.