AbstractZinc oxide (ZnO) is a promising wide band‐gap semiconductor for optoelectronic devices such as high‐brightness (HB) light‐emitting‐diode (LEDs) in illumination applications. A significant difficulty has been the preparation of p‐type ZnO, which is indispensable for ZnO LEDs. We have prepared reproducible p‐type zinc oxide films by pulsed‐laser deposition (PLD) and a subsequent thermal annealing treatment. The Hall effect, with a Hall bar configuration, was measured in order to determine the conduction type of the films. The gradient of applied magnetic field vs. Hall voltage clearly implies the successful realization of p‐type ZnO films. After the confirmation of p‐type conductivity, the films were patterned again to prepare the planar‐type p‐n junction. Emission of visible light with bluish white color was observed when electrical current was injected through the junction. The spectra of the light indicate the emission start neat the band edge of ZnO. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)