Subsequent Low Temperature Research Articles

Flexible IGZO TFTs and Their Suitability for Space Applications

In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to $10^{12}\,\,{\mathrm{ e}}^{-}$ /cm2, low operating temperatures down to 78 K and magnetic fields up to 11 mT are investigated. This simulates 278 h in LEO. The threshold voltage and mobility of transistors that were exposed to $e^{-}$ irradiation are found to shift by +(0.09 ± 0.05) V and $-(0.6\pm 0.5)\,\,{\mathrm{ cm}}^{2}{\mathrm{ V}}^{-1}{\mathrm{ s}}^{-1}$ . Subsequent low temperature exposure resulted in additional shifts of +0.38 V and $-5.95\,\,{\mathrm{ cm}}^{2}{\mathrm{ V}}^{-1}{\mathrm{ s}}^{-1}$ for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiated, cooled down, and exposed to the magnetic fields. If these notions are considered during the systems design, these devices can be used to unobtrusively integrate sensor systems into space suits.

Partially Reduced Holey Graphene Oxide as High Performance Anode for Sodium‐Ion Batteries

AbstractThe current Na+ storage performance of carbon‐based materials is still hindered by the sluggish Na+ ion transfer kinetics and low capacity. Graphene and its derivatives have been widely investigated as electrode materials in energy storage and conversion systems. However, as anode materials for sodium‐ion batteries (SIBs), the severe π–π restacking of graphene sheets usually results in compact structure with a small interlayer distance and a long ion transfer distance, thus leading to low capacity and poor rate capability. Herein, partially reduced holey graphene oxide is prepared by simple H2O2 treatment and subsequent low temperature reduction of graphene oxide, leading to large interlayer distance (0.434 nm), fast ion transport, and larger Na+ storage space. The partially remaining oxygenous groups can also contribute to the capacity by redox reaction. As anode material for SIBs, the optimized electrode delivers high reversible capacity, high rate capability (365 and 131 mAh g−1 at 0.1 and 10 A g−1, respectively), and good cycling performance (163 mAh g−1 after 3000 cycles at a current density of 2 A g−1), which is among the best reported performances for carbon‐based SIB anodes.

The novel P3-type layered Na0.65Mn0.75Ni0.25O2 oxides doped by non-metallic elements for high performance sodium-ion batteries

Due to the attractive advantage of safety and cost of sodium-ion batteries, lithium-ion batteries can be replaced by sodium-ion batteries with the ever-increasing demand of large-scale energy storage systems. However, short cycle life and poor rate performance restrict sodium-ion batteries further commercial application. Cathode materials are one of the most important components of sodium-ion batteries, which have an unparalleled effect on the electrochemical performance of sodium-ion batteries. Herein, the novel P3-Na0.65Mn0.75Ni0.25O2 cathode material doped by non-metal elements is synthesized via hydrothermal method and subsequent low temperature annealing process. The as-prepared P3-Na0.65Mn0.75Ni0.25O2 shows excellent electrochemical performance due to doping of non-metal elements. It can be found that fluorine doped Na0.65Mn0.75Ni0.25F0.1O1.9 can distinctly suppress P3-O1 phase transition and deliver a higher reversible capacity of 163.7 mAh g−1 at 0.1 C, while boron doped Na0.65Mn0.75Ni0.25B0.1O2 transforms from P3 phase to a more stable P2 phase and exhibits remarkable cycle life and rate performance. Therefore, this new strategy doping by means of non-metal elements provides a significant exploration for the development of the high capacity electrode materials of sodium-ion batteries.

Copper phosphide and persulfate salt: A novel catalytic system for the degradation of aqueous phase micro-contaminants

The heterogeneous activation of sodium persulfate (SPS) using copper (I) phosphide (Cu3P) nanoparticles was tested in this work. The catalyst was synthesized via a two-step method involving preparation of Cu(OH)2 and subsequent low temperature phosphidation and characterized with BET, XRD, TEM/HRTEM, SEM and XPS techniques. The XRD pattern showed the existence of hexagonal Cu3P phase with mean primary crystallite size of ca. 28 nm. The XP spectra indicated the presence of residual Cu(OH)2 and Cu3(PO4)2 species on the catalyst surface, originating from the synthesis methods employed, which disappeared after exposure to reaction conditions.The activity of Cu3P was evaluated for the degradation of antibiotic sulfamethoxazole (SMX), which occurred in short reaction times. The effect of catalyst concentration (20–80 mg/L), SPS dosage (0.05–1 g/L) and SMX concentration (0.5–4.1 mg/L) on degradation was studied. Results obtained in ultrapure water (UPW) showed that SMX degradation increases with increasing catalyst content in the range 20–80 mg/L and SPS concentration in the range 0.05–0.5 g/L. In contrast, increasing SPS concentration at 1 g/L leads to lower reaction rates. Experiments were also conducted in bottled water, secondary treated wastewater, UPW spiked with bicarbonate or chloride ions, as well as UPW containing humic acid. With the use of t-butanol and methanol as radical quenching agents, SO4•- was found to be the primary radical species responsible for SMX degradation. The simultaneous use of Cu3P and solar irradiation as persulfate activators resulted in a synergistic effect in experiments performed in UPW and wastewater.From a mechanistic point of view, Cu3P acts as an electron mediator or bridge to facilitate the electron-transfer processes and this is accompanied by the intermediate formation of radicals. The catalyst remains intact, thus implying the catalytic nature of the process.

Grain refinement and excellent mechanical properties of a Ti-based alloy via laser melting and subsequent low temperature annealing

Compared with arc melting, ultrahigh strength and good elongation of Ti-25Zr-10Al alloy via laser melting and subsequent low temperature annealing are investigated. The results show a strong dependency of the microstructure on the methods of melting and subsequent low temperature annealing process. Compared with orthorhombic α'' martensitic phase after arc melting, at the condition of relatively high cooling rate by laser melting, hexagonal close-packed α' martensitic phase with {101̅1} twinning is observed, and recrystallization with the average grain size of 0.3 µm occurs after subsequent low temperature annealing. In addition, ultrahigh strength of 1352 MPa and good elongation of 10.9% are obtained.

Effects of Ga-doping on the microstructure and magnetic properties of MnBi alloys

The low temperature phase Mn55Bi45-xGax (x = 0, 1, 3, 5, and 10) alloys were prepared by induction melting process with subsequent low temperature annealing. The effects of Ga-doping on the crystal structure and magnetic properties of the alloys were systematically studied. The room temperature coercivities of Mn55Bi45-xGax after ball milling increased from 1.43 T for x = 0 to 1.66 T for x = 5, while the saturation magnetization decreased from 60.7 Am2/kg (x = 0) to 45.1 Am2/kg (x = 5). The maximum energy product (BH)max of Mn55Bi44Ga powders reached 7.87 MGOe. The Curie temperature of the Mn55Bi45-xGax alloys increased from 633 K to 658 K with increasing Ga concentration in the range of 0 ≤ x ≤ 5.

Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

A high-quality aluminium nitride buffer layers were grown on (0 0 0 1) sapphire substrate at standard pressure with a subsequent low growth temperature via metal organic chemical vapour deposition. The preparation of aluminium nitride buffer layers was accomplished by growing a thin aluminium nitride nucleation layer through a nominal growth condition followed by depositing a thick aluminium nitride film using pulsed atomic-layer epitaxy technique. In 13.3 kPa ambient, the influence of aluminium nitride nucleation layer on the crystal quality of the aluminium nitride film atop was studied by varying the nucleation layer growth temperature at 700, 800, 900, 1000 and 1100 °C, respectively. It was observed that the growth temperature of nucleation layer substantially affected the structural properties of the top aluminium nitride film where the lowest value for symmetric (0 0 0 2) and asymmetric (1 0–1 2) x-ray rocking curve analysis were achieved at 1100 °C, indicating the reduction of dislocation density in the aluminium nitride films. In line with that, this result was sustained by the root mean square surface roughness evaluated via atomic force microscopy. Moreover, an atomically-flat crack-free aluminium nitride buffer layer was demonstrated by field emission scanning electron microscopy measurement.

Cold Priming Induced Tolerance to Subsequent Low Temperature Stress is Enhanced by Melatonin Application during Recovery in Wheat.

Cold priming can alleviate the effects of subsequent cold stress on wheat plant growth. Melatonin plays a key role in cold stress response in plants. In this study, the effects of foliar melatonin application during recovery on the cold tolerance of cold primed wheat plants were investigated. It was found that both melatonin and cold priming increased the photosynthetic rate and stomatal conductance, enhanced the activities of antioxidant enzymes, and altered the related gene expressions in wheat under cold stress. Melatonin application is helpful for the photosynthetic carbon assimilation and membrane stability of the cold primed plants under cold stress. These results suggested that foliar melatonin application during recovery enhanced the cold priming induced tolerance to subsequent low temperature stress in wheat.

On spinodal decomposition in alnico - A transmission electron microscopy and atom probe tomography study

Alnico is a prime example of a finely tuned nanostructure whose magnetic properties are intimately connected to magnetic annealing (MA) during spinodal transformation and subsequent lower temperature annealing (draw) cycles. Using a combination of transmission electron microscopy and atom probe tomography, we show how these critical processing steps affect the local composition and nanostructure evolution with impact on magnetic properties. The nearly 2-fold increase of intrinsic coercivity (Hci) during the draw cycle is not adequately explained by chemical refinement of the spinodal phases. Instead, increased Fe-Co phase (α1) isolation, development of Cu-rich spheres/rods/blades and additional α1 rod precipitation that occurs during the MA and draw, likely play a key role in Hci enhancement. Chemical ordering of the Al-Ni-phase (α2) and formation of Ni-rich (α3) may also contribute. Unraveling of the subtle effect of these nano-scaled features is crucial to understanding on how to improve shape anisotropy in alnico magnets.

Grain boundary engineering to control the discontinuous precipitation in multicomponent U10Mo alloy

We demonstrate here that locally stabilized structure and compositional segregation at grain boundaries in a complex multicomponent alloy can be modified using high temperature homogenization treatment to influence the kinetics of phase transformations initiating from grain boundaries during subsequent low temperature annealing. Using aberration-corrected scanning transmission electron microscopy and atom probe tomography of a model multicomponent metallic alloy —uranium-10 wt% molybdenum (U-10Mo) a nuclear fuel, that is highly relevant to worldwide nuclear non-proliferation efforts, we demonstrate the ability to change the structure and compositional segregation at grain boundary, which then controls the subsequent discontinuous precipitation kinetics during sub-eutectoid annealing. A change in grain boundary from one characterized by segregation of Mo and impurities at grain boundary to a phase boundary with a distinct U2MoSi2C wetting phase precipitates introducing Ni and Al rich interphase complexions caused a pronounced reduction in area fraction of subsequent discontinuous precipitation. The broader implication of this work is in highlighting the role of grain boundary structure and composition in metallic alloys on dictating the fate of grain boundary initiated phase transformations like discontinuous precipitation or cellular transformation. This work highlights a new pathway to tune the grain boundary structure and composition to tailor the final microstructure of multicomponent metallic alloys.

Preparation of mesoporous Ni2P nanobelts with high performance for electrocatalytic hydrogen evolution and supercapacitor

The development of bifunctional electrochemically-active materials for both hydrogen evolution reaction (HER) and supercapacitors enables the possibility to integrate energy storage and production into one single system. Here, we report a novel bifunctional mesoporous Ni2P nanobelt-like architecture prepared via the hydrothermal synthesis of Ni(SO4)0.3(OH)1.4 nanobelt precursor and subsequent low temperature phosphorization process under Ar atmosphere. Composed of numerous cross-linked Ni2P nanoparticles, the as-obtained Ni2P nanobelts exhibit a two dimensional leaf-like morphology, allowing remarkable enhancement of mesoporosity as well as active surface area. The HER electrocatalytic test in acid medium show a current density of 16 mA cm−2 at an overpotential of 187 mV, Tafel slope of 62 mV dec−1 and long-term durability. Investigation of this Ni2P nanobelts as supercapacitor materials in 2M KOH electrolyte display a high specific capacity ranging from 1074 F g−1 at 0.625 A g−1 to 554 F g−1 at 25 A g−1, and notable cycling life with 86.7% retention after 3000 cycles at 10 A g−1. With the simplicity of the synthetic routine and the outstanding performance as both HER catalysts and supercapacitors, the Ni2P nanobelts provide promising potential for energy devices.

Mechanism of Overwintering in Trees.

Boreal trees possess very high freezing resistance, which is induced by short-day length and low temperatures, in order to survive severe subzero temperatures in winter. During autumn, cooperation of photoreceptors and circadian clock system perceiving photoperiod shortening results in growth cessation, dormancy development, and first induction of freezing resistance. The freezing resistance is further enhanced by subsequent low temperature during seasonal cold acclimation with concomitant changes in various morphological and physiological features including accumulation of sugars and late embryogenesis abundant proteins. The mechanism of adaptation to freezing temperatures differs depending on the type of tissue in boreal trees. For example, bark, cambium, and leaf cells tolerate freezing-induced dehydration by extracellular freezing, whereas xylem parenchyma cells avoid intracellular freezing by deep supercooling. In addition, dormant buds in some trees respond by extraorgan freezing. Boreal trees have evolved overwintering mechanisms such as dormancy and high freezing resistance in order to survive freezing temperatures in winter.

The Effect of Low Temperature Annealing on the Deactivation and Defect Formation in Highly Doped Si:P Epitaxially Grown Films

Highly-doped Si:P (HDSiP) epitaxially grown thin films with P concentrations above 1021 cm-3 are being investigated for transistor applications due to their ability to achieve record-setting low nMOS contact resistance junctions suitable for the ITRS 7 nm technology node. Efficient dopant activation of these HDSiP layers with negligible diffusion have been reported by using an Applied Materials AstraTM millisecond laser dynamic surface anneal (DSA). This work investigates the stability of the dopant activation in these HDSiP layers during subsequent post-DSA thermal processing via Hall effect measurements. The corresponding structural changes in the HDSiP films are investigated using cross-sectional transmission electron microscopy (TEM). 40 nm thick epitaxial layers were grown with chemical doping concentrations between 0.3 – 4.0 x 1021 cm-3. Subsequent DSA treatment at 1200 °C leads to electrical dopant activation of 1 x 1021 cm-3. Subsequent low temperature annealing between 700 °C and 900 °C for times up to 30 minutes resulted in significant electrical deactivation. TEM examination shows these films are defect free after DSA treatment but for higher concentrations, extended defect formation in the epitaxial film was observed. These extended defects appear to be in the form of dislocation loops and may be the byproduct of point defect release during deactivation. The mechanism involved in deactivation will be discussed.

(Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C

In 4H-SiC electronic devices, Al+ ion implantation is often used to obtain selected regions of desired p-type conductivity in n-type epitaxial layers. A mandatory high temperature annealing is necessary after the implantation process for the electrical activation of the implanted Al. The temperature of the former and the density of the latter vary in the range 1600-1950°C and 1017-1020 cm-3, respectively. The switching properties of the so obtained bipolar junctions depend on carrier life-time in the n-type 4H-SiC epitaxial layers after processing. In the literature, it has been shown that carbon vacancy VC in n-type 4H-SiC epi-layers is a carrier life-time killer defect and that its concentration, after high temperature treatments in the range 1500-1950°C, saturates on values that are higher the higher are the applied temperature and cooling rate [1]. It has been also shown that, in the case the thermally treated 4H-SiC epi-layers were ion implanted, and whatever is the implanted ion species, VC annihilation took place from 1000°C till 1500°C, while at 1600°C the phenomena of VC annihilation and VC formation seem to compete [2], suggesting that up to 1500°C, a carbon interstitial IC’s injection from the implanted near-surface layer into the epi-layer can be sufficient to make dominant VCannihilation, but this is not the case at 1600°C. Our previous studies on carrier life-time in Al+ implanted p+-n-n+ diodes, with 6×1019 cm-3 and 2×1020 cm-3 Al+ implanted emitters after 1600 °C/20 min without carbon-cap (C-cap) and 1950 °C/5 min with C-cap post implantation annealing, respectively, have shown longer carrier life-time for diodes annealed at the lower temperature, about 700 ns against 170 ns [3], as measured by open circuit voltage decay (OCVD). The diodes annealed at the higher temperature have shown, by DLTS spectroscopy, a VC concentration lower by a factor ~ 3 relative to that in as-grown epi-layers subjected to almost the same thermal annealing (1950 °C /3 min) [1]. If the ion dose is sufficiently high, it is reasonable that injection of IC’s from the implanted layer into the epi-layer bulk takes place even at temperatures as high as 1950 °C but thermal generation of VCstill remains the prevailing process. Taking into account the above results, it sounds reasonable to deserve efforts to the investigation of an ion implantation technology for bipolar junction in 4H-SiC where the electrical activation of the implanted species is achieved by a high temperature treatment and the degradation of the carrier life-time in the device drift layer is rescued by a subsequent low temperature treatment. The first step towards such a technology is to verify that during the thermal treatment for carrier life-time rescue, none or negligible deactivation of the electrically activated dopant takes place. This is the purpose of this study. 4H-SiC materials, both high-purity-semi-insulating (HPSI) and low doped n-type, have been implanted with Al+ ions so to obtain a homogenous doped layer next of the wafer surface. Post implantation annealing has been performed at 1950°C for different times in the range 5-40 min. Some samples have been also thermally treated at 1500°C for 40 min or for 240 min. During every annealing, the sample were protected by a pyrolyzed resist film (C-cap), that was removed after the last thermal treatment. The implanted Al concentration was 1×1020 cm-3, that is lower than Al solubility in 4H-SiC at 1950°C, and higher than the expected, but never measured, Al solubility in 4H-SiC at 1500°C [4]. Van der Pauw devices were used for Hall effect and sheet resistance measurements in the temperature range 180-680 K. The temperature dependences of these data show that the 1500°C treatment has an effect ranging from “neutral” to “beneficial” on the electrical transport of the Al+implanted 4H-SiC layer submitted to a 1950°C annealing immediately after implantation. This result opens the way towards the fabrication of bipolar diodes with p-type emitters of almost identical hole density but different thermal treatments after implantation, thus with drift layers that might have very different current transport properties. [1] H. M. Ayedh, V. Bobal, R. Nipoti, A. Hallén, B. G. Svensson, J. Appl. Phys. 115, 012005 (2014) [2] H. M. Ayedh, A. Hallén, B. G. Svensson, J. Appl. Phys. 118, 175701 (2015). [3] H. M. Ayedh, M. Puzzanghera, B. G. Svensson, R. Nipoti, Mater. Sci. Forum 897, 279-282 (2017) [4] M. K. Linnarson, U. Zimmermann, J. Wong-Leung, A. Shoener, M.S. Janson, C. Jagadish, B. G. Svensson, Appl. Surf. Sci. 203-204, 427-432 (2003).

Low Density of Near-Interface Traps at the Al<sub>2</sub>O<sub>3</sub>/4H-SiC Interface with Al<sub>2</sub>O<sub>3</sub> Made by Low Temperature Oxidation of Al

We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors at different temperatures. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200°C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300°C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient.

MnO/MWCNT Composite Anode Material with Low Temperature Calcination Process for High Performance Lithium-Ion Batteries

MnO/MWCNT composites were synthesized through a vacuum solution infiltration method and a subsequent low temperature calcination process. The MnO/MWCNT composites with an empty space among the nanoparticles or inside the Multiwalled carbon nanotubes (MWCNTs), which can act as a buffer matrix to release the volume expansion, effectively solved the existing issues of active nanoparticle dissolution and aggregation during the lithium ion insertion/extraction. The MWCNTs in the composites can also improve the conductivity of electrode. Electrochemical tests show that the composites exhibit excellent cycling property and good rate performance.

Improving the visible-light photocatalytic activity of interstitial carbon-doped TiO2 with electron-withdrawing bidentate carboxylate ligands

Interstitial carbon-doped anatase TiO2 with bidentate carboxylate ligands (A-C/TiO2) has been prepared through a novel vapour-assisted solvothermal approach and subsequent low temperature calcination process. The bidentate carboxylate ligands could not only strengthen the interaction between the interstitial carbon dopants and TiO2 lattice to narrow the bandgap and enhance the visible-light absorption, but also give rise to the positive shift of the VB edge and cause further bandgap narrowing by inducing the band tail states above the VB edge. These synergistic effects could significantly improve the visible-light photocatalytic activities of interstitial carbon-doped TiO2 on phenol and MO degradation.

Improvement of formability of AZ31magnesium alloy by repeated roll bending process

Abstract Dispersion of the basal texture is effective to improve the formability. A repeated roll bending process (7 work rolls, work roll radius of 32 mm, roll pitch of 40 mm) was applied to AZ31 magnesium alloy sheets by activating the tensile twins. The larger applied bending strain per pass was effective to increase hardness at the surface of the sheet. The Erichsen value was slightly increased from 3.0 to 3.5 mm by subjected 2 passes repeated roll bending and subsequent at 180 °C for 12 hours annealing without decreasing the hardness of the sheet before bending (Hv=60). The Erichsen value of 3.3 and over hardness of Hv 65 through thickness were obtained by 2 passes bending and 160°C for 12 hours annealing. The tensile twins and texture randomizing were observed around center of thickness by electron backscatter diffraction (EBSD) analysis. It was possible to increase formability of AZ31 magnesium alloy by the repeated roll bending and subsequent low temperature annealing.

Effect of laser surface remelting and low temperature aging treatments on microstructures and surface properties of Ti-55511 alloy

The near-β titanium alloy Ti-5Al-5Mo-5V-1Cr-1Fe (Ti-55511) was firstly remelted on the surface by laser and a series of subsequent low temperatures aging treatments were carried out to obtain ultrafine microstructures in the remelted layer. Microhardness and wear resistance of each treated sample were then tested to evaluate the effects of ω-assisted α phase on the surface properties. Microstructure evolution of the whole process was observed by optical and electron microscopes. Results showed that nano-scaled athermal ω phase uniformly precipitated in β matrix of Ti-55511 after rapid solidification, and it had a little reinforcement effects in the remelted layer due to the low contents. After low temperatures aging, ultrafine α lamellas could form in the remelted layer by ω-assisted nucleation. By increasing the aging temperatures, the sizes and volume fractions of α lamellas increase, resulting in an improvement of surface hardness and wear resistance. However, the high surface hardness did not effectively enhance the wear resistance of Ti-55511 due to the ductility deterioration caused by nano-sized α phase of the aged samples. The remelted samples can achieve the highest surface microhardness over 520HV and relatively best wear resistance after aging at 500°C for 5h.

Mesoporous MnNiCoO4@MnO2 core-shell nanowire/nanosheet arrays on flexible carbon cloth for high-performance supercapacitors

For the first time, a novel three-dimensional (3D) hierarchical mesoporous MnNiCoO4@MnO2 core-shell nanowire/nanosheet arrays hybrid composite with robust adhesion on a carbon cloth (CC) as an integrated self-supported supercapacitor electrode was synthesized via a facile two-step hydrothermal method and a subsequent low temperature annealing process. The synthesized materials were characterized using field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photo electron spectroscopy (XPS), Brunauer–Emmett–Teller (BET) and electrochemical techniques. The results show that this unique nanostructure merits superiorities such as large surface area, more accessible active sites, better infiltration/diffusion, high conductivity and high electrochemical/mechanical stability. The MnNiCoO4@MnO2 core-shell nanoarrays can achieve a relatively high specific capacitance of 1931Fg−1 at a current density of 0.8Ag−1, a good capacitance retention of 91.2% at a high current density of 6Ag−1 after 6000 cycles, a low equivalent series resistance (ESR) of 0.53Ω, an energy density of 67.1Whkg−1 at a power density of 200Wkg−1 in 6molL−1 KOH electrolyte. The remarkable electrochemical behaviors indicate that the carbon cloth supported hierarchical mesoporous MnNiCoO4@MnO2 core-shell nanowire/nanosheet array electrodes are highly promising for applications like advanced supercapacitor electrodes.