This study develops a MEMS-based formaldehyde gas sensor based on a suspended silicon nitride microstructure with an integrated micro Pt heater, a thin-film NiO sensing layer and Pt interdigitated electrodes (IDEs) to measure the resistance changes of the NiO layer in the presence of formaldehyde. A specific orientation of the NiO layer is observed as the substrate temperature in the sputtering process is increased. The increase in substrate temperature assists in the formation of a NiO layer with the correct stoichiometric ratio (1:1). When formaldehyde is present in the atmosphere, oxidation occurs near the heated NiO sensing layer. This oxidization causes a change in the electrical conductivity of the NiO film, and hence changes the measured resistance between the interdigitated electrodes. The formaldehyde concentration is then determined from the change in the measured resistance. The application of a voltage to the Pt heaters causes the temperature of the micro-hotplate to increase, which in turn enhances the sensitivity of the sensor. The current experimental results show that the sub-micrometer grain sizes of the sputtered oxide thin film yield a high degree of sensitivity (0.33 Ω ppm −1), a low hysteresis value (0.7 ppm), a detection capability of less than 0.8 ppm, a quick response time (13.2 s), a quick recovery time (40.0 s) and a high selectivity over a wide range of formaldehyde concentrations in the presence of interfering species, such as acetone, ethanol and methanol. The novel micro formaldehyde gas sensor developed in this study is ideal for applications aimed at preventing and controlling sick building syndrome (SBS).
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