Study Of Oxide Thin Films Research Articles

Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films

Interface and surface physics is an important sub-discipline within condensed matter physics in recent decades. Novel concepts like oxide-electronic device are prompted, and their performance and lifetime are highly dependent on the flatness and abruptness of the layer surfaces and interfaces. Reflection high-energy electron diffraction (RHEED), which is extremely sensitive to surface morphology, has proven to be a versatile technique for the growth study of oxide thin films. A differential pumping unit enables an implementation of RHEED to pulsed laser deposition (PLD) systems, ensuring an in situ monitoring of the film growth process in a conventional PLD working oxygen pressure up to 30 Pa. By optimizing the deposition conditions and analyzing the RHEED intensity oscillations, layer-by-layer growth mode can be attained. Thus atomic control of the film surface and unit-cell control of the film thickness become reality. This may lead to an advanced miniaturization in the oxide electronics, and more importantly the discovery of a range of emergent physical properties at the interfaces. Herein we will briefly introduce the principle of high-pressure RHEED and summarize our main results relevant to the effort toward this objective, including the growth and characterization of twinned La2/3Ca1/3MnO3 thin films and ReTiO3+δ/2 (Re = La, Nd; δ = 0 ∼ 1) A n B n O3n+2 structures, on YSZ-buffered ‘Silicon on Insulator’ and LaAlO3 substrates, respectively, as well as the study of the initial structure and growth dynamics of YBa2Cu3O7−δ thin films on SrTiO3 substrate. Presently we have realized in situ monitoring and growth mode control during oxide thin film deposition process.

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

We present a fast and simple method to prepare specimens for transmission electron microscopy studies of oxide thin films deposited on silicon substrates. The method consists of scratching the film surface using a pointed diamond tip, in a special manner. Small and thin fragments are then detached from the film and its substrate. Depending on the scratching direction, the fragments can be used for plan-view or cross-section imaging. High-resolution images can be also obtained from thin edges of the film fragments. The method is demonstrated in the case of HfO2 sol-gel films deposited on [100] Si wafer substrates.

Neutron studies of magnetic oxide thin films

We describe the use of neutron scattering techniques such as reflectivity and diffractionfor the study of oxide thin films. We first describe how neutron reflectivity cancomplement x-ray reflectivity for the study of some oxide materials. We then emphasizemagnetic thin films which have become an important field of study in the 1990s,following the discovery of new phenomena in heterostructures: magnetic exchangecoupling, exchange bias coupling at antiferro/ferromagnetic interfaces, enhancedmagnetism in ultrathin films or tunnel magnetoresistance for example. We showhow neutron scattering can provide detailed quantitative information about themagnetization depth profiles of thin films and about the magnetic order in epitaxialfilms.

Atomic force microscopic studies of oxide thin films on organic self-assembled monolayers

The surface morphology of TiO2- and ZrO2-based thin films, deposited from aqueous solution at 70–80 °C onto functionalized organic self-assembled monolayers (SAMs) on silicon has been examined using atomic force microscopy (AFM). The films have been previously shown to consist, respectively, of nanocrystalline TiO2 (anatase) and of nanocrystalline tetragonal ZrO2 with amorphous basic zirconium sulfate. The films exhibit characteristic surface roughnesses on two length scales. Roughness on the nanometer scale appears to be dictated by the size of the crystallites in the film. Roughness on the micron scale is postulated to be related to several factors, including the topography of the SAM and the effects of larger, physisorbed particles or agglomerates. The topographies of the oxide thin films, on both the nanometer and micron scales, are consistent with a particle-attachment mechanism of film growth.