Wide-bandgap Ga-doped InWO (GIWO) transparent conductive electrodes (TCE) were fabricated by co-sputtering IWO and Ga2O3, followed by rapid thermal annealing (RTA), with the effects of the Ga dopant content on the electrical, optical, structural, and morphological properties of the GIWO multi-component electrodes investigated to optimize the GIWO electrode. According to the figure of merit (FOM), the GIWO film with a Ga content of 2.1 at% exhibited a low sheet resistance of 9.9 Ohm/square and high transmittance of 91.71 % at a wavelength of 550 nm. The presence of a high Lewis acid strength (LAS) dopant of Ga (1.16) and W (3.15) led to an increase in the carrier mobility of GIWO and transmittance in the near infrared wavelength region. In addition, the strongly preferred (222) and (400) orientations of the GIWO grains increase the carrier mobility and improve the surface morphology of the GIWO electrodes. The successful operation and superior performance of the planar p-i-n structured perovskite solar cells (PSC) fabricated on GIWO electrodes indicate the feasibility of GIWO as a substitute for conventional Sn-doped In2O3 electrodes. The highest-performing PSC with GIWO electrodes exhibited reliable hysteresis with an efficiency difference of less than 1 % depending on the scan direction under standard AM1.5 G conditions.
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