Surface combination structure was used to design the construction of nano and quantum films, particles, and dots. The created model was applied to tetrahedral semiconductor nanoparticles and quantum dots with a successful performance. It works better than reported experimental data across the whole size range, from the bulk state to the critical size of quantum dots. The model helps to figure out the melting point that changes with the nanosize scale as applied on Si and Sn, which are simple tetrahedral semiconductors, and for CdS and CdSe, which are among II-VI group compounds. It was also used to calculate melting-related parameters such as cohesive energy, Debye temperature, vibrational entropy, and melting enthalpy. The nanosize dependence of the lattice volume and the atom's ionization energy describes the solid surface structure. From the model, an equation was obtained to calculate the energy gaps in Si, CdS, and CdSe particles that are nano- and quantum-dot-sized, and the results are compared to the experimental data that goes with these particles.
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