Boron-doped diamond (BDD) electrodes with a three-dimensional (3D) porous network structure can overcome the mass transfer limitations and increase substantially the utilization rate of active oxygen species. Nonetheless, the 3D porous network structure was invariably built using metallic substrates, which inherently have inferior stability because of their non-corrosion resistance and the severe thermal mismatch between BDD films and substrates. Herein, we reported, for the first time, the use of a commercially porous silicon carbide (SiC) as the substrate to construct a 3D SiC/BDD electrode to simultaneously alleviate the problematics of substrate corrosion and thermal mismatch. This novel electrode exhibited a long-term service lifetime of 800 h in 3 M H2SO4 under the current density of 50 mA cm−2, over 500 times longer than the conventional metallic substrate-based BDD electrodes. The optimum p-SiC/BDD electrode exhibited a high oxygen evolution potential of 2.04 V vs. SHE, a low charge transfer resistance of 18.4 Ω, a high mass transfer coefficient of 2.78 × 10−5 m s−1, and a thin diffusion layer thickness of 25.2 μm. The proposed electrode had a threefold larger pseudo-first-order reaction rate constant than a flat BDD electrode, although it consumed just a fourth of the latter’s electric energy. The superior performance was attributable to an increased mass transfer rate confirmed by computational fluid dynamics (CFD) simulations as well as a high yield of reactive oxygen species verified by electron spin resonance (ESR). Furthermore, the proposed SiC/BDD electrode could work effectively under different water matrices in the presence of diverse salt electrolytes, thus paving a new avenue for the structure design of robust non-active anode materials.