Gallium Arsenide Structures Research Articles

Electronic structure of oxygen-doped gallium arsenide

Using a multiple-scattering X alpha molecular cluster model, the authors studied the electronic structure of GaAs:OAs, including +or-5% symmetric relaxations of the nearest-neighbour atoms. Their results indicate that the oxygen impurity introduces a non-degenerate a1 energy level in the crystal band gap. Their calculation leads to the conclusion that the oxygen impurity provokes an inward relaxation of the neighbouring atoms, and that Jahn-Teller distortions are not to be expected.

Charge-limited domains in gallium-arsenide avalanche diodes

An analysis of the high-efficiency mode of operation of gallium-arsenide avalanche diodes is presented. The concept of a charge-limited domain is introduced, and it is shown that the occurrence of this domain effectively increases the velocity of the travelling charges. This velocity increase occurs at a point roughly midway through the transit time, and causes an increase in the induced particle current at that time. This effect, coupled with the effects of depletion-layer-width modulation, has an important bearing on the observed high efficiency of nonpunchedthrough ‘clump’ and ‘hi-lo’ gallium-arsenide structures.

Electroreflectance of silicon

The major results of this paper are (i) the first high-field flatband-electroflectance data ever taken on silicon and (ii) an analysis with the one-electron theory that shows that the major portion of the direct edge spectrum is an ${M}_{0}^{2D}$ from along $\ensuremath{\Lambda}$ analogous to the ${E}_{1}$, ${E}_{1}+{\ensuremath{\Delta}}_{1}$ structures of germanium and gallium arsenide. The data cover a range of fields from about 77 to 310 kV/cm, and contains more highly resolved structure than any previously reported results. Specifically, the second, weaker transition at the direct edge has been resolved quite clearly. It is shown that this structure may best be fit with an ${M}_{1}$ line shape, a result both interesting and controversial. A fundamental band parameter has been determined for the first time from the analysis. The transverse mass along $\ensuremath{\Lambda}$, ${\ensuremath{\mu}}_{t}$, has been found to be $0.02m$, in conflict with all present calculated values. This result is independent of the model used. In addition, we have obtained values for the energy gaps of the two direct-edge structures and an upper bound has been determined for the matrix element of the $\ensuremath{\Lambda}$ transition.

525. Gallium arsenide structure manifestation by external photoeffect in x-ray spectrum region

525. Gallium arsenide structure manifestation by external photoeffect in x-ray spectrum region

Vapor phase growth of gallium arsenide microwave diodes

Gallium arsenide microwave diodes have been prepared by a novel vapor phase growth technique with the highest combination of reverse breakdown voltages and cut-off frequencies reported to date. This result is attributed to three inherent properties of this technique. First, structures of gallium arsenide can be prepared with a high purity layer directly next to layers doped either n- or p-type over a wide range of selected resistivities. Second, high quality, abrupt p- n junctions can be incorporated in these crystals without sacrifice of desired bulk properties. Third, the devices do not have to be heated to elevated temperatures after vapor growth, so that contamination of the high purity region is virtually eliminated.

Calculation of the band structure of gallium arsenide by the pseudo-potential method

Calculation of the band structure of gallium arsenide by the pseudo-potential method

Energy band structure of germanium and gallium arsenide: The K.P. method

Energy band structure of germanium and gallium arsenide: The K.P. method