Structural Properties Of Films Research Articles

Effect of deposition cycle and annealing on the structural, optical, electrical, and photoluminescence properties of SnS films obtained from rapid S-SILAR technique

AbstractIn this paper, we present an optimized procedure for depositing SnS thin films using the rapid S-SILAR technique. We also analyze the effects of deposition cycles and post-deposition annealing on various film properties. XRD analysis indicates the presence of orthorhombic and cubic phases in the films. Energy dispersive X-ray analysis confirms near-optimal stoichiometry. SEM images depict the growth of closely spaced spherical granules. High optical absorption is observed in the mid-visible to NIR region, with the absorption edge shifting towards the NIR region after annealing. The bandgap values range from 1.6 eV to 1.9 eV, which is ideal for photovoltaic applications. PL spectra show three clusters of peaks corresponding to red and green emissions. Hall measurements confirm that both the as-deposited and annealed SnS films exhibit p-type conductivity, with a hole concentration on the order of 1015 cm−3.

Characterization of structural and mechanical properties of DLC films deposited on the surface of minute-scale 3D objects: Changes in the incident behavior of carbon ions

Diamond-like carbon (DLC) films have attracted great interest from the industry because they have beneficial mechanical properties such as low friction, high hardness, and wear resistance. DLC films have been used for the surface modification of various mechanical components, although many components that require surface treatments have complex three-dimensional (3D) surface structures. To date, 3D deposition of DLC films remains difficult using conventional methods. Particularly, uniform deposition technology on 3D components has not been developed for tetrahedral amorphous carbon (ta-C) films, which possess high CC sp3 bonds with high hardness. In this study, the filtered cathodic vacuum arc (FCVA) method was used to synthesize ta-C films on Si substrates placed on the sidewalls of trench-shaped and one-side tilted samples at various tilt angles and investigated their microstructure and hardness by Raman spectroscopy and nanoindentation. The results showed that the G peak position, full width at half maximum of G peak (FWHM (G)), and hardness of the ta-C film on the trench sidewall decreased as the depth from the top surface increased, similar to previous research. In contrast, ta-C films deposited on one-side tilted sample showed little depth dependence, and the film properties were determined by the tilt angle. We revealed that the film property dependence on the trench depth direction is due to the sputtered particles from the opposing trench sidewalls, resulting in graphitization of the film.

Structural, Electronic Structure, and Electrical Properties of Pure and Vanadium-Doped CuCrO2 Thin Films

Structural, Electronic Structure, and Electrical Properties of Pure and Vanadium-Doped CuCrO2 Thin Films

Investigation of structural, morphological, optical and electronic properties of Cu-doped PbS thin films: a comparative experimental and theoretical study

Thin film technology has emerged as a cornerstone in optoelectronics, enabling the fabrication of compact, lightweight devices with enhanced performance and efficiency through precise control of the nanoscale thicknesses of functional materials. The current study explores the impact of copper (Cu) doping (3.125%, 6.25%, and 12.5%) on lead (Pb) sites in PbS to examine the structural, morphological, electronic, optical, and thermoelectric characteristics, employing both experimental and theoretical approaches. Polycrystalline thin films of PbS are deposited by spin coating technique on glass substrates. The XRD study discloses the cubic crystal structure of pristine and Cu-doped PbS with nominal variation in d-spacing. Surface morphological investigations reveal that Cu-doping transforms the coffee beans like grains to nanoplates that significantly affect the surface homogeneity and porosity. The tuning of band structure in the visible range, 1.64–2.21 eV is witnessed in the band structure analysis. Moreover, the experimental results are complemented by a theoretical study using WIEN2k software. Theoretical study exhibits the direct bandgap nature and with the incorporation of Cu, it increases from 0.89 to 2.11 eV. The density of states spectra for Cu-doped PbS exhibits strong hybridization between p-states of Pb and S, and d-states of Cu. Optical findings demonstrate significant variations in the absorption spectrum, which result in modifications in the optical energy band gap and peculiar optical parameters of doped samples. At room temperature, the increase in electrical conductivity (σ/τ) from 0.2 × 1020 (Ω.m.s)−1 for PbS to 0.3 × 1020, 3.1 × 1020 and 7.8 × 1020 (Ω.m.s)−1, thermal conductivity from 0.25 × 1014 W m.K.s−1 to 0.30 × 1014, 2.4 × 1014 and 5.2 × 1014 W m.K.s−1 and decrease in Seebeck coefficient from 72 to 35, 13 and 8 μV/K with the inclusion of Cu up to 3.125, 6.25 and 12.5% offer the potential for advancing thermoelectric technology. This could lead to improved efficiency and practical utilization in energy harvesting and waste heat recovery.

Theoretical DFT and experimental investigation of the effect of Co doping in electrochemically deposited ZnSe films

In this study, we examine the impact of introducing cobalt doping on the morphological, structural, optical, and electronic properties of ZnSe thin films produced by electrodeposition at room temperature. Characterization techniques, including X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and UV–Vis–NIR spectroscopy, were employed to analyze structural, morphological, and optical features. The developed films display a consistent and even distribution of grains with a cubic structure, showcasing a preferred orientation along the (111) axis. The calculated crystal size was estimated to be around 80 nm. The elemental composition of the film aligns with the synthesized deposition of elements. The introduction of cobalt resulted in enhanced optical properties and reduced energy bandgaps in the films. Concurrently, theoretical studies using the FP-LAPW approach in density functional theory were conducted, focusing on structural, electronic, and optical properties of cobalt-doped ZnSe at different concentrations (2 %, 4 %, 6 %). Theoretical findings demonstrated a substantial decrease in the bandgap, aligning well with the experimentally determined value of 2.72 eV. This coherence between theoretical predictions and experimental observations highlights the effectiveness of cobalt doping in influencing the optical characteristics of ZnSe thin films.

Structural, microstructural, and optical properties of SnS films deposited by nanoink’s spraying with a post-growth temperature treatment

Structural, microstructural, and optical properties of SnS films deposited by nanoink’s spraying with a post-growth temperature treatment

Tailoring the structural, optical, hydrophobicity and electrical properties of ZnO thin films by copper doping for self-clean optoelectronic application

Optoelectronic devices such as solar panels, cameras, screens, and sensors frequently suffer reduced performance due to dust accumulation. Incorporating self-cleaning features not only sustains their efficiency but also minimizes maintenance expenses, especially for large or challenging-to-access setups. In this study, copper doped-zinc oxide (CZO) thin films with varying copper (Cu) concentrations were created using the reactive co-sputtering process. These films underwent a comprehensive analysis, including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy to examine their structure, morphology, and elemental composition. Optical properties were investigated through UV–Vis spectroscopy, while hydrophobicity and electrical characteristics were assessed with contact angle and I–V measurements. Spectroscopic ellipsometry was employed to analyse surface attributes. The results confirmed that as Cu concentrations increased, the crystallite and grain size of ZnO in the films also increased. A red shift in the band gap was observed in UV–Vis spectroscopy, and Cu doping effectively reduced the electrical resistivity of the ZnO thin film. The CZO thin film, with a 60 nm thickness, low roughness (1.49 nm), high optical transmittance (around 80.20 %), a wide band gap (3.22 eV), a substantial contact angle (113°), and low electrical resistivity (5.9 × 105 Ω cm), holds great promise for use in transparent, conductive, and self-cleaning optoelectronic devices.

Effect of N2 reactive gas flow rate on the structural, optical and wettability properties of silicon carbon oxynitride thin films

In the current research, the silicon carbon oxynitride (SiCON) thin film was deposited on the silicon (Si) substrate by radio frequency (RF) reactive magnetron sputtering method. To comprehensively assess the impact of nitrogen flux rate on thin film characteristics, a suite of advanced analytical methods was utilized. The GIXRD analysis confirmed that the SiCON thin film is amorphous in structure. Additionally, Raman spectroscopy detected no graphite nanocrystals within the film. Ellipsometry measurements further showed that the refractive index of the thin films rises with increased nitrogen flux in the reactive gas, indicating a direct correlation between nitrogen concentration during deposition and optical properties. Based on the designs made with McLeod's software, the amount of reflection can be reduced up to 5.7 % at the wavelength of 4 μm and up to 8.5 % in the wavelength range of 3–5 μm for an optimal thickness thin film. The atomic force microscopy (AFM) examination revealed that the surface roughness of the thin films decreases as the nitrogen flux in the reactive gas mixture increases. Additionally, measurements of the water contact angle (WCA) indicated that the SiCON thin films exhibit a hydrophilic state.

Raman Study of Novel Nanostructured WO3 Thin Films Grown by Spray Deposition.

The present communication reports on the effect of the sprayed solution volume variation (as a thickness variation element) on the detailed Raman spectroscopy for WO3 thin films with different thicknesses grown from precursor solutions with two different concentrations. Walls-like structured monoclinic WO3 thin films were obtained by the spray deposition method for further integration in gas sensors. A detailed analysis of the two series of samples shows that the increase in thickness strongly affects the films' morphology, while their crystalline structure is only slightly affected. The Raman analysis contributes to refining the structural feature clarifications. It was observed that, for 0.05 M precursor concentration series, thinner films (lower volume) show less intense peaks, indicating more defects and lower crystallinity, while thicker films (higher volume) exhibit sharper and more intense peaks, suggesting improved crystallinity and structural order. For higher precursor concentration 0.1 M series, films at higher precursor concentrations show overall more intense and sharper peaks across all thicknesses, indicating higher crystallinity and fewer defects. Differences in peak intensity and presence reflect variations in film morphology and structural properties due to increased precursor concentration. Further studies are ongoing.

Influence of concentration on optical and structural properties of zinc sulfide films using spray pyrolysis technique

Influence of concentration on optical and structural properties of zinc sulfide films using spray pyrolysis technique

Conversion of preferred crystalline orientation by annealing and its impacts on the structural, electronic, and optical properties of pulsed laser-deposited CdO thin films

The impact of annealing on the preferred crystalline orientation as well as the structural, electronic, and optical properties of pulsed laser-deposited 150 ± 3 nm thick cadmium oxide (CdO) films was studied. X-ray diffraction analysis revealed that the annealed CdO films have smaller crystallite sizes, as their molecules at the grain boundaries possessed enough kinetic energy to rearrange their preferred crystalline orientation between (111) and (200). The atomic force microscopy and field emission scanning electron microscopy analyses revealed an enhancement in the active surface area with optimized grain boundaries by annealing which facilitates gas adsorption/desorption. DC electrical conductivity depends on the annealing process and reveals two different conduction mechanisms. The direct optical energy gap was decreased from 3.41 eV to 2.76 eV by annealing at 473 K which is greater than the theoretical value, i.e. 2.2 eV, for bulk CdO. The findings agree with the Burstein-Moss effect as a result of the increased carrier concentration following the generation of numerous oxygen vacancy sites and Cd interstitials. However, mutual charge carrier-impurity interaction and charge carrier Columb interaction contributed to narrowing the band gap by increasing the annealing temperature. The enhanced values of Urbach energy, optical packing density, dispersion parameters, optical conductivity, dissipation factor, oscillator strength, and lattice dielectric constant supported the effectiveness of the annealing process on tailoring optoelectronic responses in the infrared region for the CdO thin films for use in optoelectronic devices. Moreover, the calculated linear optical susceptibility, and nonlinear constants (i.e. third-order optical susceptibility and nonlinear refractive index) were the highest for CdO films annealed at 473 K. The improved value of the figure of merit, solar material protection factor, and solar skin protection factor for the CdO films, annealed at 473 K supports its use in several photovoltaic applications, including solar cells.

A hybrid effective medium description for nanoporous gold films and thickness-mediated control of optical absorption.

With the increasing demand for sensing platforms operating across UV, visible, and near-infrared wavelengths, nanoporous gold has emerged as an ideal substrate for rapid, quantitative detection of analytes with excellent specificity and high sensitivity. This study investigates thickness-mediated compositional changes and their impact on scattering characteristics of thin nanoporous gold films fabricated using selective chemical etching. Specifically, we observe thickness-induced morphological and structural changes across different fabricated samples from 25 to 100 nm in thickness. Upon their optical characterization across UV-VIS-NIR spectral regime, we notice that the constitutional differences among samples manifest distinctively & deterministically in their total optical scattering response. In order to gain insights into these observed scattering responses and to fathom the subtle connections between structural properties of NPG films and their optical response, a hybrid theoretical model comprising Maxwell-Garnett & Bruggeman effective medium approximations has been adopted. Our approach not only allows to appropriately account for the inhomogeneous nature of these films, but also corroborates well with the atomic force microscopy characterizations of the fabricated samples. Furthermore, tracing such a theoretical model is important as it helps in systematically ascertaining additional loss terms emerging in the complex dielectric function of films due to their nanoscale porosity & roughness, permitting a good reproduction of measured optical spectra. We believe, our approach will not only facilitate accurate regulation of losses in NPG thin films but will also aid in deriving customized optical performance from them, thereby advancing their potential applications in sensing and beyond.

Active Packaging Film Developed by Incorporating Starch Aldehyde-Quercetin Conjugate into SPI Matrix.

In this study, soy protein isolate (SPI) films incorporating quercetin-grafted dialdehyde starch (DAS-QR) and DAS/QR, respectively, were developed. The structural, physical, and functional properties of the composite films were determined. The results suggested that DAS-QR and DAS/QR formed hydrogen bonding with the SPI matrix, which improved the structural properties of the films. The light-blocking capacity, thermal stability, hydrophobicity, tensile strength, elongation at break, and antioxidant and antibacterial abilities of SPI films were improved by DAS-QR and DAS/QR. Notably, SPI films incorporated with DAS-QR exhibited better performance than those with DAS/QR in terms of antioxidant (SPI/DAS-QR: 79.8% of DPPH and 62.1% of ABTS scavenging activity; SPI/DAS/QR: 71.4% of DPPH and 56.0% of ABTS scavenging activity) and antibacterial abilities against S. aureus (inhibition rate: 92.7% for SPI/DAS-QR, 83.4% for SPI/DAS/QR). The composite coating film SPI/DAS-QR effectively maintained appearance quality, delayed the loss of weight and total soluble solids, postponed malondialdehyde accumulation, and decreased peroxidase activity and microbial contamination in fresh-cut potatoes. These good performances highlight SPI/DAS-QR as a promising active packaging material for fresh-cut product preservation.

Effect of plasticizers on the rheological properties of xanthan gum - starch biodegradable films

The effect of plasticizers, namely glycerol, sorbitol, and citric acid, on the structural and mechanical properties of biodegradable films obtained from xanthan gum (XG) and starch was studied. The plasticizing effect of glycerol, sorbitol, and citric acid on XG-starch films is justified by the destruction of intermolecular contacts between starch and XG macromolecules and the redistribution of hydrogen bonds in the system as a result of the hydrotropic action of plasticizer molecules. The use of glycerol proved to be the most effective for regulating the deformation of films, while the use of sorbitol to preserve strength. The dependence of the film roughness on the type and concentration of plasticizers was characterized. The smallest values of protrusions on the surface of XG-starch films were found in the presence of sorbitol. Considering the effect of the concentration of plasticizers on the stickiness of the surface of XG-starch films and their structural and mechanical properties, 1.5 % concentration of glycerol, sorbitol and citric acid was determined as optimal.

Investigation on structural and morphological properties of molybdenum trioxide (MoO3) thin films

Abstract The present study reports on the effect of substrate temperature on structural, morphological and optical properties of MoO3 thin films. MoO3 thin films were deposited on pre-heated glass substrate using spray pyrolysis technique. The substrate temperature was varied from 300 °C to 400°C with a step interval of 50 °C. Structural studies were studied using X-ray diffraction technique. It is observed that all the diffraction peaks exactly match with JCPDS card No. 05-0508. The as –deposited MoO3 thin films exhibits orthorhombic crystal structure. It is found that the crystalline nature increases with the increases of substrate temperature. FESEM micrographs show that the grains are distributed uniformly over the surface without any void. An optical property reveals that the transmission of MoO3 thin film in the visible region increases with increases of deposition temperature.

Physicochemical and structural properties of silica films prepared from perhydropolysilazane using vacuum ultraviolet irradiation

Developing techniques to form functional films at low temperatures is crucial for enabling their application on materials with limited heat resistance. In this study, silica films were prepared by irradiating a perhydropolysilazane (PHPS) precursor, which contains reactive Si–H and N–H groups and is free from organics, with vacuum ultraviolet (VUV) light under a controlled atmosphere. To investigate the quality of the resulting films and mechanisms behind photochemical conversion, infrared and electron spectroscopic measurements were performed. The results revealed that VUV irradiation converted the top surface of the film into silica, irrespective of the atmospheric conditions. However, differences in the oxygen concentration affected both the VUV light intensity penetrating the film and the oxygen diffusion into it, leading to the formation of silica or silicon oxynitride within the film. Under irradiation, PHPS was converted to silica not only from the surface but also from the interface with the substrate. In addition, silica was formed even at long irradiation distances, in which case VUV light barely reached the PHPS surface owing to absorption by atmospheric oxygen. These findings demonstrate that the silica-film formation involved two processes: breaking of chemical bonds induced by VUV photons and oxidation due to oxygen diffusion from the surface. The spectroscopic measurements and X-ray reflectivity results indicated that the composition, chemical state, Auger parameter, and density of the prepared silica film were comparable to those of a silica film prepared through heat treatment at 500°C. Further, the prepared silica film using VUV irradiation had a smoother surface than that of the heat-treated film. The thickness of the prepared film remained unchanged before and after VUV irradiation, indicating that the formation process using VUV irradiation suppressed the shrinkage of the film during the conversion of PHPS to silica.

Ultra-fast switching of energy efficient electrochromic nickel oxide thin films for smart window applications

In today's modern world, energy consumption continues to escalate. In such cases, smart windows play a crucial role in reducing energy consumption and enhancing the quality of life. Electrochromic devices (ECDs) -based smart windows rely profoundly on nickel oxide (NiO) thin films, which act as a counter electrode in ECDs. This work aims to fabricate NiO thin films, with the intention of achieving ultrafast ECD. Through the sputtering technique, energy-efficient ECD is obtained with the highest optical modulation of 60 % at a rapid switching speed of 0.55s for bleaching and 0.95s for coloration. We have also investigated the structural, morphological, vibrational, and optical properties of NiO thin films. XRD analysis revealed the less crystalline or near amorphous nature of NiO thin film. XPS, PL, and Raman studies confirm the existence of defects in the film. The favourable, less crystalline nature, along with the presence of defects, facilitates ultra-fast ion intercalation and de-intercalation process. We believe that prepared NiO film can be used as a promising anodic colourant in electrochromic smart windows with applications in energy-efficient buildings.

Effect of the argon flow rate and substrate temperature on the structural, morphological, optical and electrical properties of SbxTey thin films grown by radio-frequency sputtering

Sb2Te3 is a promising candidate for applications in thermoelectric thin film devices, thin film solar cells, and electronic memory devices. This study involved the preparation of SbxTey thin films using radio-frequency magnetron sputtering. By adjusting the argon flow rate and substrate temperature while using a stoichiometric Sb2Te3 sputtering target, different compositions of Sb-Te were achieved. The results revealed that an argon flow rate of 2.5 sccm with a growth temperature of 400 °C led to the formation of the Sb2Te3 compound and suppressed Te aggregates. This elimination of Te as a secondary phase resulted in a high hole density of 2.88×1020 cm−3, a low resistivity of 5.15×10−3 Ω∙cm, and a low bandgap of 0.37 eV. These characteristics make the Sb2Te3 thin films suitable as buffer layers in CdTe-based solar cells and thermoelectric devices.

Effect of annealing temperature on the structural, optical, morphological, and photocatalytic properties of TiO2 thin films prepared by sol-gel spin-coating and electron beam physical vapor deposition

TiO2 thin films were prepared by sol-gel spin-coating (SGSC) and electron beam-physical vapor deposition (EB-PVD) methods and annealed at different temperatures (Ta ). X-ray diffraction spectroscopy (XRD) results show that the TiO2 films prepared by the SGSC method transformed from the anatase single phase to the coexistence of anatase and rutile with the increase of Ta . However, TiO2 films prepared by the EB-PVD method existed only in the anatase phase, and the crystalline strength was enhanced with the increase of Ta . Meanwhile, particles of TiO2 targets annealed at different Ta showed a rutile phase for TiO2 target particles in the EB-PVD method. The results indicate that the EB-PVD method hinders the nucleation growth and phase transformation of TiO2 films. Scanning electron microscopy and atomic force microscopy also show that the grain size and R ms of TiO2 thin films prepared by the SGSC method increased with the increase of Ta , and the grain size becomes inhomogeneous when the rutile phase is formed. Ultraviolet–visible results show that the forbidden bandwidth and light absorption capacity increase with increasing Ta . For the EB-PVD method, the grain size and surface roughness gradually increased when the Ta of the films was less than 800 °C, while annealing at 800 °C changed the direction of growth and nucleation, and also produced surface cracks; XRD verified the hypothesis that the EB-PVD method hinders the nucleation growth as well as the phase transition of the films. Weak differences in the optical absorption properties and bandgap values of the films also indicate that the EB-PVD method hinders the phase transformation of TiO2 films. Finally, the results of degradation of methylene blue (MB) under simulated visible light showed that the films prepared by the SGSC method gradually improved the photocatalytic performance with the enhancement of the crystalline strength of the anatase phase. The TiO2 films prepared by the EB-PVD method improved the photocatalytic performance with the increase of the active area.

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

In this study, the effects of nickel (Ni) and boron (B) elements on the structural, optical, electrical, optoelectronic, and thermoelectric properties of zinc oxide (ZnO) material were investigated. Therefore, undoped ZnO, 3% Ni-doped ZnO (Zn0.97Ni0.03O), and 3% Ni-1% B co-doped ZnO (Zn0.96Ni0.03B0.01O) solutions were prepared by the sol gel method. The produced solutions were coated on glass and p-type Si substrates via dip coating and spraying methods in the form of thin films. We produce pure and n-type semiconductors in the form of nanodots which have wurtzite ZnO polycrystalline structure for all samples. Ni and B co-doped sample is morphologically, electrically and optically enhanced the ZnO material with 3.08 eV band gap, homogenous surface and the highest electrical conductivity. In addition, the best material among the three samples that can be used as a visible light-sensitive sensor is Zn0.96Ni0.03B0.01O under feedback voltage. Technologically, this material can be turned into a photodiode device in the form of Au/Zn0.96Ni0.03B0.01O/p-Si. While the obtained ideality factor of ZnO from the forward bias region decreases from 5.7 to 3.4, its barrier height increases from 0.636 eV to 0.667 eV and serial resistance of contact decreases from 121.6 × 103 Ω to 5.6 × 103 Ω with Ni and B co-doping. Ni doping thin film improves the photovoltaic, and thermoelectric properties of ZnO. Ni-doped ZnO sample can be studied in form of the thin films as a thermoelectric material due to its ZT value is nearly 1.73 × 10–4 at 650 K. Its thermoelectric performance is 13 times better than the that of pure ZnO for the same temperature values. The efficiency of Ni-doped ZnO sample as solar cell increases 10 times compared to pure ZnO. In addition to the production of materials with improved energy efficiency, economical products suitable for use in large areas have been obtained in this study.