Strong Spin-orbit Coupling Research Articles

Coupled Spin-Valley, Rashba Effect, and Hidden Spin Polarization in WSi2N4 Family.

Using first-principles calculations, we report the electronic properties with a special focus on the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry and strong spin-orbit coupling, we detect coupled spin-valley effects at the corners of the first Brillouin zone (BZ). Additionally, we observe cubically and linearly split bands around the Γ and M points, respectively. The in-plane mirror symmetry (σh) and reduced symmetry of the arbitrary k-point, enforce the persistent spin textures (PST) to occur in full BZ. We induce the Rashba splitting by breaking the σh through an out-of-plane external electric field (EEF). The inversion asymmetric site point group of the W atom introduces the hidden spin polarization in centrosymmetric layered bulk counterparts. Low energy k.p models demonstrate that the PST along the M-K line is robust to EEF and layer thickness, making them suitable for applications in spintronics and valleytronics.

Giant Rashba effect and nonlinear anomalous Hall conductivity in a two-dimensional molybdenum-based Janus structure

Composite quantum materials form a unique class of materials which exhibit more than one apparently distinct quantum phenomenon entangled by common requirement of different symmetries in a single material. In search of composite quantum phases in two dimensions, we investigate the electronic properties of computationally designed transition-metal carbide Janus compounds, with strong spin-orbit coupling and inversion symmetry broken by asymmetric surface passivation. The ab initio calculated electronic structure of these Janus structures, show giant Rashba effect with Rashba coefficients as large as $\ensuremath{\approx}25\phantom{\rule{4pt}{0ex}}\mathrm{eV}\phantom{\rule{0.16em}{0ex}}\AA{}$. Interestingly, the same Janus structures are shown to be potential candidates to exhibit nonlinear anomalous Hall conductivity owing to the nonzero Berry curvature on the nonequilibrium Fermi surface. Our computational study predicts that such Janus structures can be promising platform for exploring intertwined quantum phenomena in a single two-dimensional system. The two-dimensionality of the proposed systems make them ideally suited for device fabrication with technological implication of composite quantum materials.

A spin–orbit scattering–enhanced high upper critical field at the LaAlO3/KTaO3(111) superconducting interface

Spin–orbit interaction is essential to enhance the in-plane upper critical field of two-dimensional superconductors. Here, we report the LaAlO3/KTaO3 (111) superconducting interface (T c,0 ≈ 0.475 K) with a high in-plane upper critical field (∼1.6 T), which is approximately 1.8 times the Pauli paramagnetic limit. The H T superconducting phase diagram is well-fitted by the Klemm–Luther–Beasley (KLB) theory, and the relevant spin–orbit scattering (SOS) length is approximately 32 nm. Furthermore, normal-state magnetotransport measurements show signatures of weak antilocalization caused by strong spin–orbit coupling in LaAlO3/KTaO3 (111). The spin diffusion length derived from magnetotransport measurements was 40 nm at 2 K, which is comparable with the SOS length. The conformity of the phase diagram with the KLB theory and the consistency of normal state spin diffusion length and superconducting SOS length indicate that the high in-plane upper critical field at the LaAlO3/KTaO3 (111) superconducting interface is enhanced by SOS.

A combined study on structural, magnetic and specific heat on double perovskite iridates Ln2CoIrO6 [Ln = Pr, Nd

We report rich magnetic behavior for Co–Ir based double perovskites consisting of different rare earth cations Pr and Nd: Pr2CoIrO6 (PCIO) and Nd2CoIrO6 (NCIO). Both oxides show an antisite disorder of 10% and a ferrimagnetic transition, T around 96 K and 98 K respectively. The long range magnetic ordering is arising from the canted antiferromagnetic ordering between the Co2+ and Ir4+ ions. A prominent peak around 27 K in magnetization data of NCIO indicates that the total moment of Nd ion is antiferromagnetically coupled to the Co–Ir sublattice. The long range order of the Nd sublattice is corroborated by the evidence of an anomaly in specific heat at very low temperature. The compounds exhibit a maximum change of magnetic entropy of 0.57 (0.48) J kg.K−1 at T in a magnetic field of 5 T. The strong spin–orbit coupling in 5d states of Ir and cation disorder lead to the Mott insulating phase as found from the analysis of temperature dependent resistivity. These unique behaviors suggest an interesting interplay between localized Pr/Nd-4f, itinerant Co-3d and Ir-5d electrons.

Compatibility of DFT+U with non-collinear magnetism and spin-orbit coupling within a framework of numerical atomic orbitals

We report the extension of the density-functional theory plus Hubbard U (DFT+U) method to the case of non-collinear magnetism and spin-orbit coupling in a framework of numerical atomic orbitals. Both the Hubbard repulsion term U, and the exchange J parameters are explicitly included and treated separately. The occupation numbers of the localized orbitals belonging to the correlated shell are computed from the projections of the Kohn-Sham eigenfunctions onto a set of non-overlapping, orthogonal, localized projectors. We provide the detailed expressions for the total energy, forces and stresses including the Pulay corrections. Our implementation on the version 5.0 of the siesta package has been validated with simulations carried out in isolated atoms and bulk solids including atoms with a strong spin-orbit coupling.

Chiral photocurrent in a Quasi-1D TiS3 (001) phototransistor

The presence of in-plane chiral effects, hence spin–orbit coupling, is evident in the changes in the photocurrent produced in a TiS3(001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin–orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. Dark electronic transport measurements indicate that TiS3 is n-type and has an electron mobility in the range of 1–6 cm2V−1s−1. I–V measurements under laser illumination indicate the photocurrent exhibits a bias directionality dependence, reminiscent of bipolar spin diode behavior. Because the TiS3 contains no heavy elements, the presence of spin–orbit coupling must be attributed to the observed loss of inversion symmetry at the TiS3(001) surface.

Berezinskii-Kosterlitz-Thouless Transition in the Type-I Weyl Semimetal PtBi2.

Symmetry breaking in topological matter has become in recent years a key concept in condensed matter physics to unveil novel electronic states. In this work, we predict that broken inversion symmetry and strong spin-orbit coupling in trigonal PtBi2 lead to a type-I Weyl semimetal band structure. Transport measurements show an unusually robust low dimensional superconductivity in thin exfoliated flakes up to 126 nm in thickness (with Tc ∼ 275-400 mK), which constitutes the first report and study of unambiguous superconductivity in a type-I Weyl semimetal. Remarkably, a Berezinskii-Kosterlitz-Thouless transition with TBKT ∼ 310 mK is revealed in up to 60 nm thick flakes, which is nearly an order of magnitude thicker than the rare examples of two-dimensional superconductors exhibiting such a transition. This makes PtBi2 an ideal platform to study low dimensional and unconventional superconductivity in topological semimetals.

Interplay of charge ordering and superconductivity in two-dimensional 2H group V transition-metal dichalcogenides

Layered $2H\text{\ensuremath{-}}T{X}_{2}$ with $T=\mathrm{Nb}$, Ta and $X=\mathrm{S}$, Se exhibit rich dimensionality effects on charge density wave (CDW) order and superconductivity, but comprehensive understanding of these correlated quantum phases in the two-dimensional limit of $2H\text{\ensuremath{-}}T{X}_{2}$ is still lacking, hindering their practical applications. Here, I calculate from first principles the phonon linewidth and bare susceptibility to study the origin of CDW formation in ${\mathrm{NbSe}}_{2}$, ${\mathrm{TaS}}_{2}$, ${\mathrm{TaSe}}_{2}$, and ${\mathrm{NbS}}_{2}$ monolayers, analyze their relative CDW strength, and evaluate electron-phonon superconductivity within the fully anisotropic Migdal-Eliashberg theory. A peaked linewidth of the longitudinal acoustic branch and no Fermi-surface nesting around ${\mathbf{q}}_{\mathrm{CDW}}$ indicate CDW instability driven by the wave-vector-dependent electron-phonon coupling. The $3\ifmmode\times\else\texttimes\fi{}3$ CDW ground state favors a distinct hollow-centered clustering of transition-metal atoms, with larger distortion amplitude in ${\mathrm{NbSe}}_{2}$ and ${\mathrm{TaSe}}_{2}$ than in ${\mathrm{TaS}}_{2}$ and ${\mathrm{NbS}}_{2}$. Superconducting results of the monolayer CDW phase prove that strong spin-orbit coupling effects are dominant in determining the critical temperature ${T}_{\mathrm{c}}$ of each system via modifying both the strength and anisotropic extent of electron-phonon interactions. I also recapitulate measured opposite thickness dependencies of ${T}_{\mathrm{c}}$ in $\mathrm{Nb}{X}_{2}$ and $\mathrm{Ta}{X}_{2}$, and show that whether superconductivity is weakened or enhanced in monolayer limit relies on specific evolution of CDW-modulated Fermi-level density of states and electron-phonon matrix elements under reduced dimensionality. This work lays the foundation for applications of $2H$ group V transition-metal dichalcogenides in versatile nanoscale quantum devices.

Through-Space Conjugated Molecule with Dual Delayed Fluorescence and Room-Temperature Phosphorescence for High-Performance OLEDs

Purely organic materials with room-temperature phosphorescence usually have much longer triplet state lifetimes than noble-metal containing phosphorescent materials, which lead to severe exciton quenching and inferior electroluminescence (EL) performance when applied in organic light-emitting diodes (OLEDs). Herein, a novel through-space conjugated molecule (2,3-PICz-XT) with dual delayed fluorescence and room-temperature phosphorescence is developed. Owing to suitable energy levels and strong spin–orbit coupling among excited states, 2,3-PICz-XT has short phosphorescence lifetimes at microsecond scale and high photoluminescence quantum yields in neat and doped films. 2,3-PICz-XT can function as efficient emitters in OLEDs, providing high external quantum efficiencies (ηexts) of up to 32.73% with small efficiency roll-offs. It can also efficiently sensitize various phosphorescent and thermally activated delayed fluorescence (TADF) materials to yield excellent EL performances. Impressively, the hyperfluorescence OLEDs using 2,3-PICz-XT as sensitizer for multiple resonance TADF materials attain narrow EL spectra and greatly improved ηexts over 35%. To the best of our knowledge, 2,3-PICz-XT is the most efficient emitter and sensitizer ever reported for dual delayed fluorescence and phosphorescence materials.

Magnetic Properties and Microstructure of FePt(BN, X, C) (X = Ag, Re) Films.

A sputtered FePt(BN, Re, C) film, here boron nitride (BN), was compared to a reference sample FePt(BN, Ag, C). Intrinsically, these films illustrate a high anisotropy field (Hk) and perpendicular magnetocrystalline anisotropy (Ku),although the reference sample shows a higher value (Hk = 69.5 kOe, Ku = 1.74 × 107 erg/cm3) than the FePt(BN, Re, C) film (Hk = 66.9 kOe, Ku = 1.46 × 107 erg/cm3). However, the small difference in the anisotropy constant (K2/K1) ratio presents a close tendency in the angular dependence of the switching field. Extrinsically, the out-of-plane coercivity for the reference sample is 32 kOe, which is also higher than the FePt(BN, Re, C) film (Hc = 27 kOe), and both films present lower remanence (Mr(parallel)/Mr(perpendicular) = 0.08~0.12), that is, the index for perpendicular magnetic anisotropy. The higher perpendicular magnetization for both films was due to highly (001) textured FePt films, which was also evidenced by the tight rocking width of 4.1°/3.0° for (001)/(002) X-ray diffraction peaks, respectively, and high-enough ordering degree. The reference sample was measured to have a higher ordering degree (S = 0.84) than FePt(BN, Re, C) (S = 0.63). As a result, the Ag segregant shows stronger ability to promote the ordering of the FePt film; however, the FePt(BN, Re, C) film still has comparable magnetic properties without Ag doping. From the surface and elemental composition analysis, the metallic Re atoms found in the FePt lattice result in a strong spin-orbital coupling between transition metal Fe (3d electron) and heavy metals (Re, Pt) (5d electron) and we conducted high magnetocrystalline anisotropy (Ku). Above is the explanation that the lower-ordered FePt(BN, Re, C) film still has high-enough Ku and out-of-plane Hc. Regarding the microstructure, both the reference sample and FePt(BN, Re, C) show granular structure and columnar grains, and the respective average grain size and distributions are 6.60 nm (12.5%) and 11.2 nm (15.9%). The average widths of the grain boundaries and the aspect ratio of the columnar grain height are 2.05 nm, 1.00 nm, 2.35 nm, and 1.70 nm, respectively.

Large spontaneous valley polarization and high magnetic transition temperature in stable two-dimensional ferrovalley YX2(X=I, Br, and Cl )

Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) $\mathrm{Y}{X}_{2}(X=\mathrm{I}, \mathrm{Br}, \text{and} \mathrm{Cl})$ in a 2H structure constitutes a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high magnetic transition temperature. Our calculations reveal that $\mathrm{Y}{X}_{2}$ are dynamically, energetically, thermally and mechanically stable 2D ferromagnetic semiconductors with a magnetic transition temperature about 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital coupling, the large spontaneous valley polarizations of 108.98, 57.70, and 22.35 meV are also predicted in single-layer $\mathrm{Y}{X}_{2}(X=\mathrm{I}, \mathrm{Br}, \text{and} \mathrm{Cl})$, respectively. The anomalous valley Hall effect is also proposed based on the valley contrasting Berry curvature. Moreover, the ferromagnetism and valley polarization are found to be effectively tuning by applying a biaxial strain. Interestingly, the suppressed valley physics of ${\mathrm{YBr}}_{2}$ and ${\mathrm{YCl}}_{2}$ can be switched on via applying a moderate compression strain. The present findings promise $\mathrm{Y}{X}_{2}$ as competitive candidates for the further experimental studies and practical applications in valleytronics.

Negative Valley Polarization of the Intralayer Exciton via One-Step Growth of H-Type Heterobilayer WS2/MoS2

Vertical type II van der Waals heterobilayers of transition metal dichalcogenides (TMDs) have attracted wide attention due to their distinctive features mostly arising from the emergence of intriguing electronic structures that include moiré-related phenomena. Owing to strong spin-orbit coupling under a noncentrosymmetric environment, TMD heterobilayers host nonequivalent +K and -K valleys of contrasting Berry curvatures, which can be optically controlled by the helicity of optical excitation. The corresponding valley selection rules are well established by not only intralayer excitons but also interlayer excitons. Quite intriguingly, here, we experimentally demonstrate that unusual valley switching can be achieved using the lowest-lying intralayer excitons in H-type heterobilayer WS2/MoS2 prepared by one-step growth. This TMD combination provides an ideal case for interlayer coupling with an almost perfect lattice match, thereby also in the momentum space between +K and -K valleys in the H-type heterostructure. The underlying valley-switching mechanism can be understood by bright-to-dark conversion of initially created electrons in the valley of WS2, followed by interlayer charge transfer to the opposite valley in MoS2. Our suggested model is also confirmed by the absence of valley switching when the lowest-lying excitons in MoS2 are directly generated in the heterobilayer. In contrast to the H-type case, we show that no valley switching is observed from R-type heterobilayers prepared by the same method, where interlayer charge transfer does not occur between the opposite valleys. We compare the case with the series of valley polarization data from other heterobilayer combinations obtained under different excitation energies and temperatures. Our valley switching mechanism can be utilized for valley manipulation by controlling the excitation photon energy together with the photon helicity in valleytronic devices derived from H-type TMD heterobilayers.

Non-Centrosymmetric Sr2IrO4 Obtained Under High Pressure.

Sr2IrO4 with strong spin-orbit coupling and Hubbard repulsion (U) hosts Mott insulating states. The similar crystal structure and magnetic and electronic properties, particularly the d-wave gap observed in Sr2IrO4 enhanced the analogies to the cuprate high-Tc superconductor, La2CuO4. The incomplete analogy was due to the lack of broken inversion symmetry phases observed in Sr2IrO4. Here, under high-pressure and high-temperature conditions, we report a noncentrosymmetric Sr2IrO4. The crystal structure and its noncentrosymmetric character were determined by single-crystal X-ray diffraction and high-resolution scanning transmission electron microscopy. The magnetic characterization confirms the Ir4+ with S = 1/2 at low temperature in Sr2IrO4 with magnetic ordering occurring at around 86 K, where a larger moment is observed than the ambient pressure Sr2IrO4. Moreover, the resistivity measurement shows three-dimensional Mott variable-range hopping (VRH) existed in the system. This noncentrosymmetric Sr2IrO4 phase appears to be a unique material that offers a further understanding of high-Tc superconductivity.

Enhanced Electronic g-Factors in Magic Number Main Group Bimetallic Nanoclusters

We report the observation of large electronic g-factors in magic number main group bimetallic nanoclusters by performing Stern-Gerlach deflection experiments at 10 K. The clusters AlPb12 and InPb12 exhibit values of g = 3.5-4.0, whereas GaPb12 clusters surprisingly reveal a value of g < 2.0. Multireference ab initio methods are applied to unmask the origin of the g-factors and to gain insight into the electronic structure. The interplay of the pyritohedral molecular symmetry, a particularly strong spin-orbit coupling involved in the ground state, and the presence of low-lying degenerate excited states causes large positive g-factors in AlPb12 and InPb12. Contrarily, the spin-orbit coupling in the GaPb12 ground state is completely quenched. This is due to the d-block contraction lowering the nonbonding Ga 5s orbital and consequently forming an icosahedral ground state. Thus, endohedral p-doped tetrel clusters, composed of purely main group elements, state a novel and unique class of magnetic compounds and their study contributes to a more profound understanding of the metal-metal interaction in polynuclear clusters as well as magnetism at the molecular level.

Texture-induced spin-orbit coupling and skyrmion-electron bound states in a Néel antiferromagnet

We derive effective-mass electron Hamiltonian for a N\'eel antiferromagnet in the presence of a smooth texture of the staggered magnetization. For certain locations of electron band extrema, the texture produces a peculiar and anomalously strong spin-orbit coupling of the scale $\hbar v / L$, with $v$ the Fermi velocity and $L$ the characteristic length scale of the texture. For a Skyrmion texture, this coupling generates electron bound states, whose energy scale is given by the gap $\Delta$ in the electron spectrum. With dopant carriers, such bound states turn the Skyrmion into a charged particle, that can be manipulated by electric field.

Magnetic Studies of Iron-Doped Probable Weyl Semimetal WTe2

The non-trivial topology of electronic bands in Weyl semimetals originates from band inversion due to strong spin–orbit coupling. The Weyl semimetals have pairs of Weyl gap-less nodes in the bulk Brillouin zone. The tungsten ditelluride WTe2 likely belongs to type II Weyl semimetals. Doping WTe2 with magnetic ions could induce magnetic ordering in this crystal, which provides prospects for practical applications. We studied the magnetic properties of the iron-doped single crystals Fe0.03W0.97Te2, annealed and unannealed, in comparison with the undoped WTe2. Measurements of the dc magnetization were carried out from 1.8 to 400 K. We revealed pronounced ferromagnetic ordering that was affected by annealing. Anomalies associated with antiferromagnetism and paramagnetism were also found. The magnetic order was suppressed by a field of 60 kOe. The rise in susceptibility with increasing temperature was observed at high temperatures in all samples and was treated using a model developed for Weyl semimetals. The Curie–Weiss law fit at 60 kOe showed that the effective magnetic moment was close to that of Fe2+. Metamagnetism was demonstrated for the unannealed doped WTe2 crystal. The data for the heat capacity of the iron-doped sample agreed with results for the undoped WTe2.

Temperature-Regulated Dual Phosphorescence and Mechanical Strain-Induced Luminescence Modulation in a Plastically Bendable and Twistable Organic Crystal

A unique, thermally interchangeable, and tunable dual phosphorescence from a single-component organic crystal of DBC (3,6-dibromo-9-ethyl-9H-carbazole) is described here. Temperature-regulated relative intensities of a triple-channel radiative process, viz., singlet and dual triplets, enabled a near-white luminescence in a wide temperature range. Interestingly, the single crystals of DBC can also be plastically bent using external mechanical stress and allow the modulation of phosphorescence. The luminescence was completely singlet-mediated in the monomeric state, while the crystalline solid had three pathways of radiative processes. Strong n−π interactions mediated by non-covalent interactions significantly augment the initially forbidden n−π* transitions, which enabled a strong spin–orbit coupling to obtain large radiative triplet states in the solid state. Trapped higher energy triplets were the significant contributors to the emission at lower temperatures, whereas, at higher temperatures, the lower lying triplets dominated the process. A detailed mechanistic approach to unraveling the findings is summarized in the article.

Strong spin-orbital coupling induced tunable electronic structures and enhanced visible-light absorption in one-dimensional RhTe6I3 systems.

Considering the demand for device miniaturization, low-dimensional materials have been widely employed in various fields due to their unique and fascinating physical and chemical properties. Here, based on first-principles calculations, we predict a novel one-dimensional (1D) RhTe6I3 chain system. Our calculations indicate that a 1D RhTe6I3 single chain can be prepared from its bulk counterpart by an exfoliation method and exists stably at room temperature. The 1D RhTe6I3 single chain is a direct semiconductor with a moderate bandgap of 1.75 eV under a strong spin-orbital coupling (SOC) effect dominated by Te. This bandgap can be modulated by the chain number and the application of external strain. Notably, the 1D RhTe6I3 single chain has a high electron mobility (1093 cm2 V-1 s-1), which is one to two orders of magnitude higher than those of most previously reported 1D materials. The strong SOC effect can also enhance the visible-light absorption capacity of the 1D RhTe6I3 single chain. The moderate direct bandgap, high electron mobility, excellent visible-light absorption, and strong spin-orbital coupling make 1D RhTe6I3 systems ideal candidates in electronic and optoelectronic devices.

Spin-switching effect and giant magnetoresistance in quantum structure of monolayer MoS&lt;sub&gt;2&lt;/sub&gt; nanoribbons with ferromagnetic electrode

Spintronics is a new type of electronics based on electron spin rather than charge as the information carrier, which can be stored and calculated by regulating and manipulating the spin. The discovery and application of the giant magnetoresistance effect opens the door to the application of electron spin properties. Realizing on-demand control of spin degree of freedom for spin-based devices is essential. The two-dimensional novel material, monolayer transition metal dichalcogenide (TMD) (MoS&lt;sub&gt;2&lt;/sub&gt; is a typical example from the family of TMD materials), has become an excellent platform for studying spintronics due to its novel physical properties, such as direct band gap and strong spin-orbit coupling. Obtaining high spin polarization and achieving controllability of degrees of freedom are fundamental problems in spintronics. In this paper, we construct the monolayer zigzag MoS&lt;sub&gt;2&lt;/sub&gt; nanoribbon quantum structure of electrically controlled ferromagnetic electrode to solve this problem. Based on the non-equilibrium Green’s function method, the regulation of the magnetic exchange field and electrostatic barrier on the spin transport in parallel configuration and anti-parallel configuration are studied. It is found that in the parallel structure, spin transport is obviously related to the magnetic exchange field, and 100% spin filtering can occur near the Fermi energy level to obtain pure spin current. When an additional electric field is applied to the middle region, the spin filtering effect is more significant. Therefore, the spin switching effect can be achieved by regulating the incident energy. In addition, it is also found that within a specific energy range, electrons in the parallel configuration are excited to participate in transport, while electrons in the anti-parallel structure are significantly inhibited. Consequently, a noticeable giant magnetoresistance effect can be obtained in this quantum structure. Moreover, it can be seen that the magnetic exchange field strength can effectively modulate the giant magnetoresistance effect. These results provide valuable theoretical references for the development of giant magnetoresistance devices and spin filters based on monolayer zigzag MoS&lt;sub&gt;2&lt;/sub&gt; nanoribbons.

Progress of Two-Dimensional Magnetic Materials for Spin Orbit Torque

The rapid development of information technology has put forward higher requirements for the performance of information processing and storage devices. At the same time, with the continuous reduction of device size, traditional semiconductor devices based on electron charge properties face the problems and challenges of thermal dissipation and quantum size effect, and semiconductor technology has entered the post-molar era. Unlike traditional charge-based electronic devices, spin-based non-volatile Spintronic devices not only have high integrated density, read and write speed and read and write times, but also can effectively avoid heat dissipation, establishing a new technical platform for the development of information storage, processing and communication. In recent years, two-dimensional materials have attracted a lot of attention due to their unique band structure and rich physical properties. Two-dimensional magnetic materials have shown great research and application potential in the field of Spintronics. Compared to traditional block materials, the atomic thickness, ultra-clean interface and flexible stacking of two-dimensional materials provide great opportunities for exploring novel physical effects and ultra-low-power devices. At the same time, with the rise of topological materials (TMs), their topological protected band structures, diversified crystal structures and symmetries, strong spin-orbit coupling and adjustable electrical conductivity provide an ideal physical research platform for spintronics research. In this paper, we first introduce the common methods of preparing two-dimensional materials, then focus on the research progress of two-dimensional magnetic materials in the field of spin-orbit electronics, and finally look forward to the research challenges in this field. In the future, with continuous in-depth research on the preparation, physical properties and device applications of two-dimensional magnetic materials, two-dimensional magnetic materials will show more extensive research prospects and application value in the field of spintronics. Two-dimensional magnetic materials will provide more material systems for spintronics development.