Strong Dzyaloshinskii-Moriya Interaction Research Articles

Interlayer and interfacial Dzyaloshinskii-Moriya interaction in magnetic trilayers: First-principles calculations

We determine the Dzyaloshinskii-Moriya interaction within and between two magnetic cobalt layers separated by a nonmagnetic spacer through calculations. We investigate different materials for the nonmagnetic layer, focusing on the experimentally realized Co/Ag/Co system. We laterally shift the atoms in the nonmagnetic layer to achieve the symmetry breaking required for the interlayer Dzyaloshinskii-Moriya interaction. We compare the resulting interactions with the Levy-Fert model and observe a good overall agreement between the model and the calculations for the dependence on the atomic positions. Additionally, we derive a formula for the strength of the interlayer isotropic exchange interaction depending on the position of the atoms in the nonmagnetic layer and compare it to the first-principles results. We investigate the limitations of the Levy-Fert model by turning off the spin-orbit coupling separately on the nonmagnetic and magnetic atoms and by studying the effect of band filling. Our work advances the understanding of the microscopic mechanisms of the interlayer Dzyaloshinskii-Moriya interaction and gives insight into possible new material combinations with strong interlayer Dzyaloshinskii-Moriya interaction. Published by the American Physical Society 2024

Machine learning assisted screening of two dimensional chalcogenide ferromagnetic materials with Dzyaloshinskii Moriya interaction

Magnetic skyrmions are potential candidates for high-density storage and logic devices because of their inherent topological stability and nanoscale size. Two-dimensional (2D) Janus transition metal chalcogenides (TMDs) are widely used to induce skyrmions due to the breaking of inversion symmetry. However, the experimental synthesis of Janus TMDs is rare, which indicates that the Janus configuration might not be the most stable MXY structure. Here, through machine-learning-assisted high-throughput first-principles calculations, we demonstrate that not all MXY compounds can be stabilized in Janus layered structure and a large proportion prefer to form other configurations with lower energy than the Janus configuration. Interestingly, these new configurations exhibit a strong Dzyaloshinskii–Moriya interaction (DMI), which can generate and stabilize skyrmions even under a strong magnetic field. This work provides not only an efficient method for obtaining ferromagnetic materials with strong DMI but also a theoretical guidance for the synthesis of TMDs via experiments.

Enhanced interlayer Dzyaloshinskii–Moriya interaction and field-free switching in magnetic trilayers with orthogonal magnetization

The indirect interlayer exchange coupling (IEC) between two magnetic layers holds significant importance in the field of spintronics and has been widely used in the construction of synthetic antiferromagnets. Recently, the interlayer Dzyaloshinskii–Moriya interaction (DMI), antisymmetric counterpart of IEC, has been discovered in magnetic trilayers with a heavy-metal spacer. In this study, we present an investigation on antisymmetric and symmetric counterparts of IEC in D022-Mn3Ga/Pt/Co trilayers with orthogonal magnetization. Due to the strong interlayer DMI across the entire multilayer, the symmetry of magnetic reversal process was broken, leading to an enhanced chiral exchange-bias field of 42.7 Oe in the Co layer. In addition, field-free spin–orbit torque (SOT) switching of D022-Mn3Ga layer has been realized in Hall bar devices. In-plane field dependence analysis of the SOT switching behavior reveals that the symmetric counterpart of IEC exhibits antiferromagnetic characteristics within the spacer thickness range of 2 nm ≤ tPt ≤5 nm. Moreover, the magnitude of both antisymmetric and symmetric counterparts of IEC exhibits an exponential decreasing trend with increasing tPt. These findings hold significant implications for the design and manipulation of three-dimensional chiral spin textures in the future spintronic devices.

Giant enhancement of perpendicular magnetic anisotropy and Curie temperature in BiTeI/MnSe2 heterostructures

We study the magnetic properties of the monolayer MnSe2 and the bilayer BiTeI/MnSe2 heterostructures using the first-principles calculations. Results show that the monolayer MnSe2 is a half-metal ferromagnet with room Curie temperature and in-plane magnetic anisotropy. The magnetic anisotropy energy originates mainly from the Se atoms. Introduction of strain, especially interlayer coupling in BiTeI/MnSe2 heterostructures make the easy-magnetization direction rotate from in-plane to out-of plane and give rise to a substantial perpendicular magnetic anisotropy. In addition, the exchange interactions are enhanced, and a strong Dzyaloshinskii-Moriya interaction is introduced in the BiTeI/MnSe2 heterostructures, which promotes the Curie temperature significantly. The findings in this work provide a way to improve the magnetic properties of two-dimensional magnetic materials and point to the application of the monolayer MnSe2.

Nonlinear dynamics of a spin-Hall nano-oscillator based on the canted antiferromagnet.

The theory of the nonlinear dynamics of a canted antiferromagnet-based (AFM) spin-Hall oscillator with weak ferromagnetism caused by the strong Dzyaloshinskii-Moriya interaction between magnetic sublattices is rigorously studied. The AFM oscillator's frequency tuning is carried out both due to a DC spin-polarized current flowing through the normal metal layer and an external permanent magnetic field. A feature of the operation of this oscillator is the presence of a hysteresis region between the subcritical (damping) and overcritical (self-oscillating) regimes. We show that it is necessary to reduce an effective easy-plane anisotropy field of the AFM or choose antiferromagnetic material with a smaller exchange field between magnetic sublattices to get a smaller hysteresis region. The action of an external permanent magnetic field on an antiferromagnet leads to the presence of two stable equilibrium states, and the self-oscillating regime is characterized by two-mode generation. We find the conditions for the absence of two-mode generation on the "current density-magnetic field strength" plane. We believe that our results can be helpful for the practical development of a sub-THz frequency tunable oscillator based on the AFM with weak ferromagnetism.

Structural distortion induced Dzyaloshinskii–Moriya interaction in monolayer CrI3 at heterostructures

The magnetic heterostructures provide flexible ways to realize particular magnetic properties that possess both scientific and practical significance. Here, by first-principles calculation, we predict strong Dzyaloshinskii–Moriya interactions (DMIs) by constructing CrI3/Metal heterostructures. The underlaying mechanisms are ascribed to the large spin-orbital coupling (SOC) of the I atom and the structural distortion in CrI3 layer caused by substrates. This is different from the traditional way that deposit magnetic films on substrate to generate DMI, wherein DMI is dominated by interlayer hybridization and large SOC of substrates. In addition, both Heisenberg exchange and magnetic anisotropy are modulated dramatically, such as Heisenberg exchange is nearly doubled on Au(111), and the out-of-plane magnetism is enhanced by 88% on Ir(111). Our work may provide a experimentally accessible strategy to induce DMI in layered magnetic materials, which will be helpful to the design of spintronics devices.

Topology-induced chiral photon emission from a large-scale meron lattice

AbstractMerons are a class of topologically protected particle-like structures created in in-plane magnetized magnetic films. The structures can act as information carriers and could be used for magnetic storage. However, the development of such applications is hampered by limitations in the size, thermal stability and magnetic-field requirements of the systems. Here we report the construction of millimetre-scale meron lattices that are stable at room temperature and under zero magnetic field. Our system is based on a trilayer structure composed of a thin iron film sandwiched between films of palladium and magnesium oxide (Pd/Fe/MgO) on a gallium nitride wafer. It is fabricated using a molecular-beam epitaxy approach that is assisted by a high magnetic field, which leads to a strong Dzyaloshinskii–Moriya interaction. The lattices can be used for chirality transfer from merons to electrons and then to photons, and we show that the meron lattices can be used as spin injectors in nitride-based light-emitting diodes. The topology-induced spin light-emitting diode can provide 22.5% circularly polarized electroluminescence at room temperature and under zero magnetic field.

Skyrmion size-tuning in two-dimensional antiferromagnetic monolayers by applying local spin-polarized current-induced spin-transfer torque

Antiferromagnetic (AFM) skyrmions exhibit a variety of outstanding features, including stability, non-volatility, processability, and resistance to the skyrmion Hall effect (SkHE). However, AFM skyrmions are insensitive to an external magnetic field, posing a major challenge for controlling their size. Tuning the key magnetic properties in AFM thin films is a feasible method for controlling skyrmion size, but it may also adversely affect other magnetic characteristics, such as the velocity and stability of the skyrmion, especially for small skyrmion sizes. In this study, we have investigated the size controllability of AFM skyrmions in the presence of the Dzyaloshinskii–Moriya interaction (DMI), applying a pure spin current in a bilayer structure consisting of a 2D AFM nanodisk placed over a thin coating of heavy metal (HM). The method relies on destabilizing the AFM lattice by targeting the 2D AFM nanodisk in a specific area defined by the diameter (dtr) using spin-polarized current-perpendicular-to-plane (CPP), causing a localized magnetization precession induced by spin-transfer torque (STT). As a result, a series of AFM skyrmions of different radii was stabilized depending on the diameter used without resorting to re-tuning the magnetic characteristics of the material. Moreover, we have found that for strong DMI, robust AFM skyrmions of small sizes can also be generated by adopting small diameters. Besides, the impact of spin current and nucleation time has been examined, and it was found that adjusting these parameters does not help to fine-tune the skyrmion size as much as it affects the nucleation process. Finally, we demonstrate how this method may be used to adjust both the radius and site of the skyrmion in the 2D AFM monolayer by simultaneously targeting different locations using pure spin currents. This method allows us to tune the AFM skyrmion size and to directly address the target skyrmion without disturbing the surrounding magnetic environment. Therefore, our results may pave the way for high-functional spintronics applications based on AFM skyrmions.

Evidence of Strong Dzyaloshinskii–Moriya Interaction at the Cobalt/Hexagonal Boron Nitride Interface

The Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) were measured on four series of Co films (1-2.2 nm thick) grown on Pt or Au and covered with h-BN or Cu. Clean h-BN/Co interfaces were obtained by exfoliating h-BN and transferring it onto the Co film in situ in the ultra-high-vacuum evaporation chamber. By comparing h-BN and Cu-covered samples, the DMI induced by the Co/h-BN interface was extracted and found to be comparable in strength to that of the Pt/Co interface, one of the largest known values. The strong observed DMI despite the weak spin-orbit interaction in h-BN supports a Rashba-like origin in agreement with recent theoretical results. Upon combination of it with Pt/Co in Pt/Co/h-BN heterostructures, even stronger PMA and DMI are found which stabilizes skyrmions at room temperature and a low magnetic field.

Electrically function-switchable magnetic domain-wall memory.

Versatile memory is strongly desired for end users, to protect their information in the information era. In particular, bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered with. However, no such switchable memory has been reported. We demonstrate that the rewritable function can be converted into read-only function by applying a sufficiently large current pulse in a U-shaped domain-wall memory, which comprises an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate are demonstrated. Furthermore, we confirm that the information can be stored in rewritable or read-only states at bit level according to the security needs of end users. Our work not only provides a solution for personal confidential data, but also paves the way for developing multifunctional spintronic devices.

Helimagnet-based nonvolatile multi-bit memory units

In this Letter, we present a design of a helimagnet-based emerging memory device that is capable of storing multiple bits of information per device. The device consists of a helimagnet layer placed between two ferromagnetic layers, which allows us to lock-in specific spin configurations. The bottom pinned layer has high anisotropy energy or stays exchange biased, which keeps its spin configuration fixed on a specific direction, while the top layer is free to rotate under the influence of in-plane magnetic fields. We begin by finding the relaxed spin structure, which is the result of the competition between the Dzyaloshinskii–Moriya interaction (DMI) and exchange energy and is referred to as the equilibrium state (“0”). The writing of a memory state is simulated by applying an in-plane field that rotates and transforms the spin configurations of the memory device. Our results indicate that stable configurations can be achieved at rotations of an integer multiple of 180° (corresponding to states “−2,” “−1,” “1,” “2,” etc.), where the anisotropy stabilizes the free layer and, thus, the exchange coupled helimagnet. These states are separated by magnetic energy barriers and intermediate, unstable spin configurations tend to revert to their adjacent states. By simply changing the direction of the field, we can achieve multi-bit data storage per unit memory cell. The maximum number of bits is reached when the anisotropy energy barriers cannot withstand the strong DMI energy. Reading can be done by evaluating the different resistance states due to the twisted spin texture.

Brillouin light scattering from quantized spin waves in nanowires with antisymmetric exchange interactions

Antisymmetric exchange interactions lead to non-reciprocal spin-wave propagation. As a result, spin waves confined in a nanostructure are not standing waves; they have a time-dependent phase, because counter-propagating waves of the same frequency have different wavelengths. We report on a Brillouin light scattering (BLS) study of confined spin waves in Co/Pt nanowires with strong Dzyaloshinskii-Moriya interactions (DMI). Spin-wave quantization in narrow ($\lesssim 200$ nm width) wires dramatically reduces the frequency shift between BLS Stokes and anti-Stokes lines associated with the scattering of light incident transverse to the nanowires. In contrast, the BLS frequency shift associated with the scattering of spin waves propagating along the nanowire length is independent of nanowire width. A model that considers the chiral nature of modes captures this physics and predicts a dramatic reduction in frequency shift of light scattered from higher energy spin waves in narrow wires, which is confirmed by our experiments.

Combined piezoelectricity, valley splitting and Dzyaloshinskii-Moriya interaction in Janus GdXY (X, Y = Cl, Br, I) magnetic semiconductors.

Janus materials, as a family of multifunctional materials with broken mirror symmetry, have played a great role in piezoelectric, valley-related, and Rashba spin-orbit coupling (SOC) applications. Using first-principles calculations, it is predicted that monolayer 2H-GdXY (X, Y = Cl, Br, I) will combine giant piezoelectricity, intrinsic valley splitting and a strong Dzyaloshinskii-Moriya interaction (DMI), resulting from the intrinsic electric polarization, spontaneous spin polarization and strong spin-orbit coupling. Opposite Berry curvatures and unequal Hall conductivities at the K- and K'-valleys of monolayer GdXY are promising for storing information through the anomalous valley Hall effect (AVHE). Through construction of the spin Hamiltonian and micromagnetic model, we obtained the primary magnetic parameters of monolayer GdXY as a function of the biaxial strain. Due to the dimensionless parameter κ having strong tunability, monolayer GdClBr is promising to host isolated skyrmions. The present results are expected to enable the application of Janus materials in piezoelectricity, spin- and valley-tronics and the formation of chiral magnetic structures.

Electronic properties, skyrmions and bimerons in Janus CrXY (X, Y = S, Se, Te, Cl, Br, I, and X ≠ Y) monolayers.

Using first-principles calculations, we systematically investigate the electronic properties, chiral skyrmions and bimerons in two-dimensional (2D) Janus CrXY (X, Y = S, Se, Te, Cl, Br, I, and X ≠ Y) monolayers. We found that the categories of nonmagnetic atoms (X and Y in CrXY) determine whether CrXY is a ferromagnetic metal or a semiconductor. Unexpectedly, the CrBrS monolayer of these CrXY materials is a room temperature ferromagnetic semiconductor with a Curie temperature of 303 K, and it possesses an off-plane magnetic anisotropy energy of 0.06 meV. Besides, a strong Dzyaloshinskii-Moriya interaction (DMI) of 3.10 meV is found in CrTeI and is mainly induced by the strong spin-orbit coupling of the nonmagnetic atoms Te(I) rather than that of the magnetic Cr atoms. Furthermore, using micromagnetic simulations, skyrmions can be stabilized in CrSeBr without external magnetic fields. More importantly, the bimerons in CrSeCl with in-plane magnetic anisotropy can be transformed into skyrmions or a ferromagnetic state by controlling the direction of external magnetic fields. Our work investigates fourteen kinds of Janus monolayers, serving as guidelines for materials research on DMI, skyrmions and bimerons.

Designing strong and tunable magnetoelectric coupling in 2D trilayer heterostructures

The quest for electric-field control of nanoscale magnetic states such as skyrmions, which would impact the field of spintronics, has led to a challenging search for multiferroic materials or structures with strong magnetoelectric coupling and efficient electric-field control. Here we report a theoretical prediction that such phenomena can be realized in two-dimensional (2D) bilayer FE/PMM and trilayer FE/PMM/FE heterostructures (two-terminal and three-terminal devices), where FE is a 2D ferroelectric and PMM is a polar magnetic metal with strong spin–orbit coupling. Such a PMM has strong Dzyaloshinskii-Moriya interactions (DMI) that can generate skyrmions, while the FE can generate strong magnetoelectric coupling through polarization-polarization interactions. In trilayer heterostructures, contact to the metallic PMM layer enables multiple polarization configurations for electric-field control of skyrmions. We report density-functional-theory calculations for particular material choices that demonstrate the effectiveness of these arrangements, with the key driver being the polarization-polarization interactions between the PMM and FE layers. The present findings provide a method to achieve strong magnetoelectric coupling in the 2D limit and a new perspective for the design of related spintronics.

Omnidirectional flat bands in chiral magnonic crystals

The magnonic band structure of two-dimensional chiral magnonic crystals is theoretically investigated. The proposed metamaterial involves a three-dimensional architecture, where a thin ferromagnetic layer is in contact with a two-dimensional periodic array of heavy-metal square islands. When these two materials are in contact, an anti-symmetric exchange coupling known as the Dzyaloshinskii–Moriya interaction (DMI) arises, which generates nonreciprocal spin waves and chiral magnetic order. The Landau–Lifshitz equation and the plane-wave method are employed to study the dynamic magnetic behavior. A systematic variation of geometric parameters, the DMI constant, and the filling fraction allows the examination of spin-wave propagation features, such as the spatial profiles of the dynamic magnetization, the isofrequency contours, and group velocities. In this study, it is found that omnidirectional flat magnonic bands are induced by a sufficiently strong Dzyaloshinskii–Moriya interaction underneath the heavy-metal islands, where the spin excitations are active. The theoretical results were substantiated by micromagnetic simulations. These findings are relevant for envisioning applications associated with spin-wave-based logic devices, where the nonreciprocity and channeling of the spin waves are of fundamental and practical scientific interest.

Strong Dzyaloshinskii-Moriya interaction in monolayer CrI3 on metal substrates

Dzyaloshinskii-Moriya interaction (DMI) is the primary mechanism for realizing real-space chiral spin textures, which are regarded as key components for the next-generation spintronics. However, DMI arises from a perturbation term of the spin-orbit interaction and is usually weak in pristine magnetic semiconductors. To date, large DMI and the resulting skyrmions are only realized in a few materials under stringent conditions. Using first-principles calculations, we demonstrate that significant DMI occurs between nearest-neighbor Cr atoms in two-dimensional (2D) magnetic semiconductor CrI$_3$ on Au or Cu substrates. This exceptionally strong DMI is generated by the interfacial charge transfer and weak chemical interactions between chromium halides and metal substrates, which break the spatial inversion symmetry. These findings highlight the significance of substrate effects in 2D magnets and expand the inventory of feasible materials with strong DMI.

Magneto‐Ionics in Annealed W/CoFeB/HfO2 Thin Films

AbstractThe magneto‐ionic modulation of the Dzyaloshinskii–Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2 stacks annealed at different temperatures and for varying annealing times, are presented in this work. A large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 °C, whereas no response to voltage is observed in the as‐grown samples. A strong DMI is only observed in the samples annealed at 390 °C for 1 h, while PMA is present for all annealing times at temperatures of 390 and 350 °C. Magnetic properties including domain wall velocity improve drastically with increasing the annealing temperature and time, while the magneto‐ionic reversibility is increasingly compromised. The changes in PMA and DMI induced by the gate voltages in the samples annealed at 390 °C are permanent, while partial reversibility is only observed for the samples annealed at 350 °C for short times. This dependence of reversibility on post‐grown annealing has been associated to the influence of crystallization on ion mobility. These results show that a compromise between the enhancement of the magnetic properties and the magneto‐ionic performance could be needed in systems requiring annealing to develop PMA and DMI.

All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device

AbstractControl of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic‐in‐memory computing architectures. Although various attempts have been proposed to avoid the participation of magnetic field during magnetization switching for realizing multifunctional spin logic devices, simpler and more feasible approaches are still strongly desired. Here, field‐free current‐induced magnetization switching is achieved through magnetic domain wall (DW) motion in a dual‐channels device, where the chiral Néel DW is stabilized by the strong Dzyaloshinskii–Moriya interaction in Pt/Co/Ru asymmetric structure. By electrically programming the initial magnetization states of the device with two opposite switching modes, four Boolean logic gates of AND, NAND, OR, and NOR are demonstrated. This work demonstrates that ingenious geometry design can be important for developing the spin logic devices and in‐memory computing architectures.

Tuning magnetic anisotropy and Dzyaloshinskii-Moriya interaction via interface engineering in nonisostructural SrCuO2/SrRuO3 heterostructures

We report a theoretical investigation on the effects of interface reconstruction on magnetic anisotropy (MA) and Dzyaloshinskii-Moriya interaction (DMI) for nonisostructural heterostructures formed by an infinite-layer oxide ${\mathrm{SrCuO}}_{2}$ and a perovskite oxide ${\mathrm{SrRuO}}_{3}$. Due to the atomic, charge, spin, and orbital reconstructions at interface, the SRO film thickness-dependent magnetic anisotropy oscillation behavior has been greatly tuned in two ${\mathrm{SrCuO}}_{2}/{\mathrm{SrRuO}}_{3}$ heterostructures. A strong DMI of 3.5 meV/Ru and a large DMI/exchange constant ratio $|D/J|$ of 0.63 are obtained at the ${\mathrm{CuO}}_{2}\text{\ensuremath{-}}\mathrm{Sr}\text{\ensuremath{-}}{\mathrm{RuO}}_{2}$ interface, which are beneficial to the creation and stability of skyrmions. Besides, the DMI is tunable, monotonically decreasing with the increase of the content of the apical oxygen ions in the interfacial layer, and takes the minimal value of 0.1 meV/Ru at the ${\mathrm{CuO}}_{2}\text{\ensuremath{-}}\mathrm{SrO}\text{\ensuremath{-}}{\mathrm{RuO}}_{2}$ interface. We evaluate the formation energy of oxygen vacancy in interface SRO layer, which turns out to be half as much as that in bulk SRO. This small value ensures the experimental feasibility towards two interfaces. Combining first-principles calculations with tight-binding model, we find that the effectively modulated MA and DMI at the ${\mathrm{CuO}}_{2}\text{\ensuremath{-}}\mathrm{Sr}\text{\ensuremath{-}}{\mathrm{RuO}}_{2}$ interface are mainly associated with the occupation of ${d}_{3{z}^{2}\ensuremath{-}{r}^{2}}$ orbital, the enhanced interface symmetry breaking, and orbital hybridization. The present work demonstrates the distinct features of the interface formed between nonisostructural oxides and suggests a conceptually different strategy towards the modulation of MA and DMI.