Strip Waveguides Research Articles

Highly Sensitive Refractive Index Sensor based on Silicon Nitride Strip Waveguide Directional Coupler

We propose a refractive index sensor, based on grating-assisted directional coupler, by comprising two coupled asymmetric strip waveguides with a top-loaded grating structure. We have studied variation of the sensitivity with the waveguide parameters to optimize the design of the sensor. The proposed sensor is an on-chip device with a high refractive index sensitivity of 104nm/RIU with $ \pm $ 140 nm fabrication tolerance, which is more than two times higher than the reported work, and the sensor can also achieve the ultrahigh sensitivity 105nm/RIU with the fabrication tolerance $ \pm $ 13nm. The sensor has large dynamic range from refractive index 1.0 to 1.55. We have also studied the propagation loss due to side wall roughness of the strip waveguide and found that it does not significantly affect sensor performance.

Design and fabrication of asymmetric Mach-Zehnder interferometers based on EpoClad and EpoCore strip waveguides

Integrated polymeric optical interferometers offer the possibility of developing sensors with low cost, scalability, and easy integration. Although they are not yet competitive with inorganic materials in terms of sensitivity, they have good biocompatibility in general, and suitable designs may provide sufficient sensitivity for biosensing. A new design for integrated Mach-Zehnder interferometers based on asymmetric arms with different widths has been proposed and experimentally demonstrated, avoiding the need for additional fabrication steps for an interaction window where biosamples are placed. The basic sensory principle is built upon the non-zero variation in the difference of the effective refractive index between the two arms due to their different dimensions, causing a phase variation in the output signal. In this work, we present a design optimization method and fabrication results by e-beam lithography for integrated asymmetric Mach-Zehnder interferometers based on strip waveguides made from EpoClad and EpoCore polymers. The operation wavelength was set to 650 nm. The optimization algorithm is based on open-source mode-solver simulations that return the optimal fabrication dimensions of the interferometer, avoiding high-order modes and enhancing single-mode confinement.

WDM C-band four channel demultiplexer using cascaded multimode interference on SiN strip waveguide structure

Back reflection challenges significantly constrain the efficiency of optical communication networks employing dense wavelength division multiplexing (DWDM) technology, particularly those based on Silicon (Si) Multimode Interference (MMI) waveguides. To mitigate this limitation, we present a novel 1×4 optical demultiplexer design using MMI within a Silicon-Nitride (SiN) strip waveguide configuration, operating within the C-band spectrum. Our design was optimized using AI-enhanced RSoft-CAD simulations that combined the Beam Propagation Method (BPM) and Finite-Difference Time-Domain (FDTD) techniques, integrated with convolutional neural network (CNN) machine learning algorithms. The simulation results demonstrate that the proposed device efficiently transmits four channels with 10 nm spacing in the C-band, showing low power loss ranging from 1.98-2.35 dB, a broad bandwidth of 7.68-8.08 nm, and excellent crosstalk suppression between 20.8-23.4 dB. Leveraging the low refractive index of SiN, we achieve ultra-low back reflection of 40.58 dB without requiring specialized angled MMI designs, which are often necessary in Si-based MMI technology. Consequently, this SiN-based MMI demultiplexer provides an effective solution for DWDM systems, enabling high data transmission rates with minimal back reflection in optical communication networks.

Machine learning-based evaluation of performance of silicon nitride waveguide fabrication: Gradient-boosted forests for predicting propagation and bend excess losses

The propagation and bend excess loss characteristics of silicon nitride strip waveguides at an 850 nm wavelength were explored in this study. The aim was to optimize fabrication processes using machine learning, particularly gradient-boosted forests, to achieve low-loss photonic integrated circuits (PICs) and accurately predict the losses. The impact of waveguide geometry and layer properties on loss was examined using a full factorial design of experiment. These machine learning models’ predictive accuracy and ability to capture complex relationships between fabrication parameters and different loss mechanisms were assessed. Key parameters and interactions were identified, improving PIC efficiency for photonic sensing applications.

Channeling of weak intramode beams in the field of a strong spatial soliton in a thin left-handed film on a right-handed substrate with Kerr effect

The trapping of weak guided modes by a strip waveguide induced by a strong spatial soliton in a planar waveguide based on a thin left-handed film with a right-handed linear cover and a substrate with the Kerr effect at a frequency near the zero group velocity of the TE mode is considered. It is shown that a bright (dark) soliton can induce a strip waveguide not only for a positive (negative) nonlinear optical coefficient of the substrate, but also for a negative (positive) one, which is due to the existence in the original planar waveguide of guided modes with both positive and negative group velocities.

Design and Characterization of Dispersion-Tailored Silicon Strip Waveguides toward Wideband Wavelength Conversion

One of cost-effective ways to increase the transmission capacity of current standard wavelength division multiplexing (WDM) transmission systems is to use a wavelength band other than the C-band to transmit in multi-band. We proposed the concept of multi-band system using wavelength conversion, which can simultaneously process signals over a wide wavelength range. All-optical wavelength conversion could be used to convert C-band WDM signals into other bands in a highly nonlinear fiber (HNLF) by four-wave mixing and allow to simultaneously transmit multiple WDM signals including other than the C-band, with only C-band transceivers. Wavelength conversion has been reported for various nonlinear waveguide materials other than HNLF. In such nonlinear materials, we noticed the possibility of wideband transmission by dispersion-tailored silicon-on-insulator (SOI) waveguides. Based on the CMOS process has high accuracy, it is expected that the chromatic dispersion fluctuation could be reduced in mass production. As a first step in the investigation of the broadness of wavelength conversion using SOI-based waveguides, we designed and fabricated dispersion-tailored 12 strip waveguides provided with an edge coupler at both ends. Each of the 12 waveguides having different widths and lengths and is connected to fibers via lensed fibers or by lenses. In order to characterize each waveguide, the pump-probe experimental setup was constructed using a tunable light source as pump and an unmodulated 96-ch C-band WDM test signal. Using this setup, we evaluate insertion loss, input power dependence, conversion bandwidth and conversion efficiency. We confirmed C-band test signal was converted to the S-band and the L-band using the same silicon waveguide with 3 dB conversion bandwidth over 100-nm. Furthermore, an increased design tolerance of at least 90 nm was confirmed for C-to-S conversion by shortening the waveguide length. It is confirmed that the wavelength converters using the nonlinear waveguide has sufficiently wide conversion bandwidth to enhance the multi-band WDM transmission system.

Broadband mode-division (de)multiplexer using nanorod-assisted multimode subwavelength gratings

—Subwavelength grating (SWG) allows flexible tuning of the dispersion of waveguides, enabling wider bandwidths for directional coupler-based devices. However, its light field constraint capability for high-order modes is so weak that the mode scattering loss from sidewalls is high, which impedes low-loss transmission and efficient energy coupling from adjacent waveguides. In this paper, we propose nanorod-assisted multimode subwavelength grating (NSWG) waveguides that support stable high-order modes transmission like strip waveguides, and maintain refractive index tunability similar to SWGs. We fully analyze the mode transmission and coupling characteristics of NSWG waveguides for modes TE1, TE2, and TE3. Results show that such waveguides can hold high transmission fidelity and low losses for high-order modes (<0.33 dB/cm, 0.58 dB/cm, and 1.0 dB/cm for TE1, TE2, and TE3). Arbitrary high-order modes among NSWGs can also be excited efficiently by evanescent field coupling. As proofs of concept, we also demonstrate a three-channel mode-division multiplexer with broad bandwidth (136 nm/135 nm/100 nm), low insertion loss (0.29 dB/0.85 dB/0.62 dB), and crosstalk (-21.4 dB/-20.4 dB/-18.0 dB) for TE0/TE1/TE2. And the device has a compact footprint of 5 × 61 μm. At 1.55 μm, all three modes satisfy IL < 0.19 dB and CT < -20.0 dB. The proposed waveguide structures may provide an alternative building block for broadband and compact multimode on-chip directional coupler-based devices.

Fast Adiabatic Mode Evolution Assisted 2 × 2 Broadband 3 dB Coupler Using Silicon-on-Insulator Fishbone-like Grating Waveguides.

We report a novel 2 × 2 broadband 3 dB coupler based on fast adiabatic mode evolution with a compact footprint and large bandwidth. The working principle of the coupler is based on the rapid adiabatic evolution of local eigenmodes of fishbone-like grating waveguides. Different from a traditional adiabatic coupling method realized by the slow change of the cross-section size of a strip waveguide, a fishbone waveguide allows faster adiabatic transition with proper structure and segment designs. The presented 3 dB coupler achieves a bandwidth range of 168 nm with an imbalance of no greater than ±0.1 dB only for a 9 μm coupling region which significantly improves existing adiabatic broadband couplers.

Mode thermo-optic coefficient engineering of sub-wavelength gratings and its application for a mode-insensitive switch.

It is shown that the thermo-optic (TO) coefficients of various waveguide modes of a sub-wavelength grating (SWG)-assisted strip waveguide is closely dependent on the various waveguide parameters with different dependencies, including the SWG width, strip waveguide width, duty cycle, and pitch. This offers what we believe to be new degrees of freedom in the design of TO coefficients for integrated-optic waveguides, opening the door to engineering the TO coefficients of individual spatial modes or polarization states using sub-wavelength structures. Such a capability is expected to offer new design possibilities for a variety of integrated photonic, thermo-optic devices. To demonstrate the application of the concept, a mode-insensitive switch on silicon-on-insulator using a TO coefficient-engineered SWG as a mode-independent, thermo-optic phase shifter is designed and experimentally demonstrated. The experimental results show that the switching powers of the TE0-TE2 modes are only ∼29 mW, and the maximum extinction ratios for the cross (bar) states are 38.2 dB (31 dB), 37.9 dB (37 dB), and 31.9 dB (20.5 dB) for the TE0-TE2 modes, respectively, at the wavelength of 1550 nm.

Flexible transmission control of mode conversion in a TiO2 cladding silicon subwavelength waveguide by engineering inter-waveguide mode coupling

Mode conversions can be effectively accomplished in coupled mode silicon photonic waveguide systems when specific phase-matching conditions are fulfilled. However, conventional device using such principles is optimized to a certain coupling length, which can only achieve a fixed energy transmission. Moreover, the conventional method to tune the refractive index is insufficient for effective transmission manipulation. In this paper, we systematically analyze the coupling strategy in the silicon-based dual-waveguide coupled-mode system, and propose an effective transmission tuning method by engineering the inter-waveguide mode coupling. We introduce titanium dioxide as cladding material to a subwavelength waveguide-based directional coupler to change the refractive index variable, which is both CMOS compatible and has negative thermo-optical coefficient. By implementing different temperature on waveguide, the dispersion curves of stripe waveguide and subwavelength waveguide can be tailored independently, thus the coupling coefficient can be changed without changing the geometry of waveguide. We demonstrate prototype of TE0-TE1 multi-mode variable optical attenuator. The output can be tuning 0.05%–96.4% of input energy when the temperature rises 0-400 K. We extend the device to TE2 and TE3 with output intensities of 0.04-91.4% and 0.04-88.8% over the temperature rise range of 317 K and 214 K, respectively. Cascading mode converters for different mode-order, we can arbitrarily mix the mode percentage in output waveguide to generate different interference patterns. We demonstrate a reconfigurable optical tweezer using this setup, which is capable of manipulating nanoscale particles. We envision that such methodology can be implemented in flexible multimode optical networks and labs on chip.

Evanescent Wave Sensitivity of Silica-Titania Rib Waveguides in the Single-Mode Propagation Regime

The analysis reported in this paper shows that the homogeneous sensitivity of both fundamental rib waveguide modes, HE00 and EH00, can slightly exceed the sensitivity of the optimized parent slab waveguide. The most crucial difference in the behavior of these two polarizations is that the sensitivity of the HE00 mode is the maximum for strip waveguides. In contrast, the sensitivity of the EH00 mode can either decrease monotonically or not-monotonically with increasing rib height or behave like a homogeneous sensitivity characteristic of the slab waveguide’s EH0 mode. The second important conclusion comes from comparing the sensitivity characteristics with the distributions of the fundamental mode’s optical power. Namely, the homogeneous sensitivity of the rib waveguide is at the maximum if, due to a slight variance in the cover refractive index, a variation in the weighted optical power carried by the mode is the maximum.

Ultra-Compact Ultra-Broadband Two-Mode Transverse-Electric Based SWG Multiplexer Demonstrated at 64 Gbps

We designed and experimentally demonstrated an ultra-compact and ultra-broadband two-mode de-multiplexer based on a subwavelength grating (SWG) asymmetrical coupler (ADC) on a silicon-on-insulator (SOI) platform. The device consists of a cascaded strip waveguide tapered to a multimode segment and a SWG-based single-mode waveguide. Tapering the strip waveguide in multi-segments guarantees a high fabrication tolerance with a wider wavelength range of operation. The parameters of the periodic structure are chosen to meet the Bragg condition and phase-match the TE1 mode of the strip waveguide. These features produce a faster mode evolution with a shorter coupling length of only 8.5 µm and an entire mode division multiplexing (MDM) link (Mux and Demux) of only 55 µm. The MDM link operates over a wide wavelength range, covering the entire S-, C-, and L-bands. The insertion loss (IL) and crosstalk (CT) achieved at 1550 nm are better than 1 dB and -18 dB, respectively. The device also has low fabrication sensitivity to deviations in the waveguide's parameters. Additionally, the transmission performance of the link is demonstrated at 1550 nm wavelength using non-return-to-zero (NRZ) on-off keying (OOK) modulation, where clear eye diagrams are obtained at 64 Gbps.

LPCVD Silicon Nitride Photonic Integrated Components Designed at 532 Nm Wavelength for a Novel Retinal Projection Concept and Visible Domain Applications

This paper describes the design, fabrication, and experimental characterization of several photonic integrated components specifically made for a novel retinal projection concept for augmented reality applications. The retinal projection concept is based on the combination of integrated optics and holography to generate a self-focusing image on the retina. The photonic integrated circuit used for the retinal projector is made of several passive photonic components fabricated with stoichiometric Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> : single-mode strip waveguides, variable radius bent waveguides, MMI couplers (Multi-Mode Interference), diffraction grating couplers and waveguide crossings. The photonic components are designed to work in the visible spectrum at λ = 532 nm. They are compact and generally show low losses, which are the two main requirements to easily insert the photonic integrated circuit on wearable glasses and enhance the image quality of the retinal projector. Our photonic components can also find applications in a variety of other fields related to the visible spectrum, such as biophotonics, optical phased arrays, visible light communication and more.

An Optical 1×4 Power Splitter Based on Silicon-Nitride MMI Using Strip Waveguide Structures.

This paper presents a new design for a 1 × 4 optical power splitter using multimode interference (MMI) coupler in silicon nitride (Si3N4) strip waveguide structures. The main functionality of the proposed design is to use Si3N4 for dealing with the back reflection (BR) effect that usually happens in silicon (Si) MMI devices due to the self-imaging effect and the higher index contrast between Si and silicon dioxide (SiO2). The optimal device parameters were determined through numerical optimizations using the beam propagation method (BPM) and finite difference time domain (FDTD). Results demonstrate that the power splitter with a length of 34.6 μm can reach equal distribution power in each output port up to 24.3% of the total power across the O-band spectrum with 0.13 dB insertion loss and good tolerance MMI coupler parameters with a shift of ±250 nm. Additionally, the back reflection range over the O-band was found to be 40.25-42.44 dB. This demonstrates the effectiveness of the incorporation using Si3N4 MMI and adiabatic input and output tapers in mitigating unwanted BR to ensure that a good signal is received from the laser. This design showcases the significant potential for data-center networks, offering a promising solution for efficient signal distribution and facilitating high-performance and reliable optical signal routing within the O-band range. By leveraging the advantages of Si3N4 and the MMI coupler, this design opens possibilities for advanced optical network architectures and enables efficient transmission of optical signals in the O-band range.

Electro-optical tunable interleaver in hybrid silicon and lithium niobate thin films.

The interleaver was one of the key devices in dense wavelength division multiplexing (DWDM) applications. In this study, an interleaver with an asymmetrical Mach-Zehnder interferometer structure was designed, fabricated, and characterized in hybrid silicon and lithium niobate thin films (Si-LNOI). The interleaver based on Si-LNOI could be fabricated by mature processing technology of Si photonic, and it was capable of the electro-optical (E-O) tuning function by using the E-O effect of LN. In the range of 1530-1620 nm, the interleaver achieved a channel spacing of 55 GHz and an extinction ratio of 12-28 dB. Due to the large refractive index of Si, the Si loading strip waveguide based on Si-LNOI had a compact optical mode area, which allowed a small electrode gap to improve the E-O modulation efficiency of the interleaver. For an E-O interaction length of 1 mm, the E-O modulation efficiency was 26 pm/V. The interleaver will have potential applications in DWDM systems, optical switches, and filters.

High-power two-color Kerr frequency comb generation on the gallium phosphide-on-insulator platform at SWIR and MIR spectra

Optical frequency combs (OFCs) covering multiple spectral windows are of great interest as broadband coherent light sources. Pushing into high powers for traditional single OFCs as well as nonlinear frequency translated OFCs led to the narrowing of their bandwidths. Here, we present a hybrid integrated solution on the gallium phosphide-on-insulator (GaP-OI) platform to generate high-power two-color Kerr frequency combs at both the short-wave infrared (SWIR) and the mid-infrared (MIR) spectra. The design consists of a GaP-OI resonator with a partially etched gap for frequency comb generation at the two colors and a modal phase-matched strip waveguide for a second-harmonic generation (SHG). The resonator has a 3.25 µm wide anomalous dispersion window, which is enabled by mode hybridization and higher-order modes waveguide dispersion. The pump light at 1550 nm wavelength is frequency doubled from the 3100 nm wavelength light source, with a normalized SHG conversion efficiency of 793%W−1cm−2. We also propose the ring-bus coupler design to efficiently deliver optical power into the resonator while suppressing the leakage out of the resonator. The simulated two-color combs show a bandwidth of 87 nm above the −30dBm power level at the SWIR spectrum and a bandwidth of 749 nm above the same power level at the MIR spectrum. Our proposed two-color OFC generation scheme levitates the ceiling in terms of high power and broad bandwidth simultaneously on a single platform, paving the way toward monolithic solutions to integrated broadband coherent sources.

Ultrabroadband and compact 2 × 2 3-dB coupler based on trapezoidal subwavelength gratings.

We propose and experimentally demonstrate an ultrabroadband and compact 2 × 2 3-dB coupler based on the trapezoidal subwavelength gratings (SWGs). The adiabatic coupling is achieved between a trapezoidal SWG waveguide and a reversely tapered strip waveguide, which contributes to the ultrabroad operation bandwidth and the compact footprint of the coupler. Numerical results prove that our device has a power splitting imbalance of < ± 0.5 dB and an excess loss of < 0.2 dB in the ultrabroad bandwidth of 300 nm from 1400 nm to 1700nm, with a coupling length of 4.4 µm and a total length of 24.4 µm. The fabricated device is characterized in a 270-nm bandwidth from 1400 nm to 1670 nm, showing a measured power splitting imbalance of < ± 0.7 dB and an excess loss of < 0.5 dB.

Silicon nitride assisted tri-layer edge coupler on lithium niobate-on-insulator platform.

Lithium niobate-on-insulator (LNOI) is a promising integration platform for various applications, such as optical communication, microwave photonics, and nonlinear optics. To make Lithium niobate (LN) photonic integrated circuits (PICs) more practical, low-loss fiber-chip coupling is essential. In this Letter, we propose and experimentally demonstrate a silicon nitride (SiN) assisted tri-layer edge coupler on LNOI platform. The edge coupler consists of a bilayer LN taper and an interlayer coupling structure composed of an 80 nm-thick SiN waveguide and an LN strip waveguide. The measured fiber-chip coupling loss for the TE mode is 0.75 dB/facet at 1550 nm. Transition loss between the SiN waveguide and LN strip waveguide is ∼0.15 dB. In addition, the fabrication tolerance of the SiN waveguide in the tri-layer edge coupler is high.

Optimization and Performance Evaluation of Single-Mode SOI Waveguides for Ultra-Broadband C-to-S Wavelength Conversion

In order to keep up with expected growth in data traffic, using multiple bands beyond the C band is an appealing solution as it can partly reuse deployed optical fibers. One way of handling multi-band data generation and reception is by using all-optical wavelength converters (AOWCs) to translate to or from the C band, where commercial equipment is easily available. In this work, we therefore designed and realized an AOWC targeting C-to-S band conversion. To respect the requirements of commercial applications, we aimed for a low-complexity high-bandwidth implementation with reasonably low power consumption, tolerance for typical process variations and potential for further integration. Thus we implemented the AOWC as a strip waveguide in a Silicon-on-insulator (SOI) technology. An optimization of the conversion bandwidth was conducted during design and initial characterizations confirmed a conversion efficiency of -32.8 dB and a high bandwidth of about 35 nm with grating couplers and likely beyond 50 nm for edge couplers. Using the fabricated converters, we were able to demonstrate a marginal 0.3 dB optical signal-to-noise ratio (OSNR) penalty for a back-to-back (b2b) transmission of a single-channel single-polarization 32 GBd quadrature-phase-shift keying (QPSK) signal converted from C to S band. Additionally, this converted signal was successfully transmitted over 100 km of standard single-mode fiber (SSMF). Finally, crosstalk issues arising in multi-channel conversion were investigated.

Efficient Light Coupling and Purcell Effect Enhancement for Interlayer Exciton Emitters in 2D Heterostructures Combined with SiN Nanoparticles.

Optimal design of a silicon nitride waveguide structure composed of resonant nanoantennas for efficient light coupling with interlayer exciton emitters in a MoSe2-WSe2 heterostructure is proposed. Numerical simulations demonstrate up to eight times coupling efficiency improvement and twelve times Purcell effect enhancement in comparison with a conventional strip waveguide. Achieved results can be beneficial for development of on-chip non-classical light sources.