Electroless deposition of copper is an important process in manufacturing various electrical connections. In this process, hydrogen is generated concurrently with the deposition of copper atoms by the oxidation of reducing agent (formaldehyde). While most of them are released as molecular hydrogen bubbles, some of them are co-deposited in copper films. Hydrogen co-deposition has been recognized as cause of residual stress generation, ductility loss, and void formation in the films. However, the detailed mechanism of such hydrogen-induced phenomenon has not been clarified. We previously reported that the room-temperature grain growth observed in electrodeposited copper films is caused by hydrogen-induced superabundant vacancy-hydrogen clusters [1,2]. In this study, the atomistic state (interstitial, vacancy-hydrogen clusters, and in nanovoids) and amount of hydrogen in the electrolessly deposited copper films have been analyzed by thermal desorption spectroscopy (TDS) [3]. The hydrogen concentration is much higher than the solubility in bulk copper, and decreased by aging at room temperature. Lattice expansion and compressive residual stress of deposited copper films are decreased with hydrogen concentration, which exists at interstitial sites, by the aging. Additives for electroless deposition reduce the hydrogen concentration and the compressive residual stress of deposited Cu films.AcknowledgementsThe present work was partly supported by JSPS KAKENHI (JP22K04763).[1] N. Fukumuro, T. Adachi, S. Yae, H. Matsuda, and Y. Fukai, Trans. Inst. Met. Finish., 89, 198 (2011). DOI: 10.1179/174591911X13082997023873[2] N. Fukumuro, H. Yoshida, T. Yamazaki, Y. Fukai, and S. Yae, J. Japan Inst. Met. Mater., 80, 736 (2016). DOI: 10.2320/jinstmet.JD201608[3] N. Fukumuro, K. Tohda, and S. Yae, J. Electrochem. Soc., 169, 122505 (2022). DOI: 10.1149/1945-7111/acaa63
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