Strain Relaxation Research Articles

Constructing Morphotropic Phase Boundary in Epitaxial BiFeO3 on SrTiO3 by Suppression of Strain Relaxation

AbstractThe strain‐driven morphotropic boundary in BiFeO3 can enhance the piezoelectric properties. However, the tetragonal phase has generally been observed in BiFeO3 films grown on substrates with intense compressive strain (more than −4.5%) within a limited thickness range (<300 nm) due to significant thickness‐dependent strain relaxation during film growth at high deposition temperatures. This work proposes suppressing thickness‐dependent strain relaxation by decreasing growth temperature. Utilizing a hydrothermal method, the growth temperature of epitaxial BiFeO3 films decreases to 200 °C. As a result, the tetragonal phase is observed in 600‐nm‐thick BiFeO3 film on (001) SrTiO3 substrates (strain equals only −1.5%), accompanied by the monoclinic phase. This SrTiO3‐available morphotropic phase boundary significantly enhances the piezoelectric response in epitaxial BiFeO3 film. Ex situ and in situ measurements, theoretical calculations, and simulation confirm that the SrTiO3‐available morphotropic phase boundary originates from the suppressed strain relaxation. Furthermore, a critical temperature (400 °C), below which the tetragonal phase can be maintained, is identified to offer an applicable strategy for extending strain‐driven morphotropic phase boundary for high‐performance piezoelectric films.

Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

AbstractThe explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm‐shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub‐10‐nm ultra‐thin Si1−xGex buffer layer fabricated by an oxidative solid‐phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion‐damaged layer, precipitating a fully strain‐relaxed Ge‐rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect‐mediated diffusion of Si through the layer. The epitaxial growth of high‐quality GaAs is demonstrated on this ultra‐thin Si1−xGex layer, demonstrating a promising new pathway for integrating III‐V lasers directly on the Si platform.

Polarity control and crystalline quality improvement of AlN thin films grown on Si(111) substrates by molecular beam epitaxy

We attain N-polar and Al-polar AlN thin films on Si(111) substrates by plasma-assisted molecular beam epitaxy. The polarity of AlN epilayers has been validated by wet chemical etching using tetramethylammonium hydroxide and by the direct cross-sectional observation of atomic stacking under high-angle annular dark-field scanning transmission electron microscopy. For the 290 nm-thick as-grown N-polar AlN epilayer, x-ray diffraction (XRD) (002) and (102) ω rocking curve peak full width half maximums (FWHMs) are 475 and 1177 arcsec, and the surface mean square roughness (RMS) is 0.30 nm. We flipped the polarity using the metal-flux-modulation-epitaxy (MME) strategy. The MME strategy promotes anti-phase boundaries (APBs) on the {22¯01} crystalline planes instead of commonly observed lateral planar APBs in AlN epilayers. Merging of the tilted APBs at ∼50 nm leads to a complete Al-polar surface. For the 180 nm-thick Al-polar AlN epilayer, XRD (002) and (102) peak FWHMs are 1505 and 2380 arcsec, and the surface RMS is 1.41 nm. Strain analysis by XRD and Raman spectroscopy indicates a uniform tensile strain of 0.160% across the N-polar AlN epilayer surface and a strain distribution of 0.113%–1.16% through the epilayer. In contrast, the Al-polar AlN epilayer exhibits a much broader tensile strain distribution of 0.482%–2.406% along the growth direction, potentially due to the interaction of polarity inversion and strain relaxation.

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

The growth of high-quality germanium tin (Ge1–y Sn y ) binary alloys on a Si substrate using chemical vapor deposition (CVD) techniques holds immense potential for advancing electronics and optoelectronics applications, including the development of efficient and low-cost mid-infrared detectors and light sources. However, achieving precise control over the Sn concentration and strain relaxation of the Ge1–y Sn y epilayer, which directly influence its optical and electrical properties, remain a significant challenge. In this research, the effect of strain relaxation on the growth rate of Ge1–y Sn y epilayers, with Sn concentration >11at.%, is investigated. It is successfully demonstrated that the growth rate slows down by ~55% due to strain relaxation after passing its critical thickness, which suggests a reduction in the incorporation of Ge into Ge1–y Sn y growing layers. Despite the increase in Sn concentration as a result of the decrease in the growth rate, it has been found that the Sn incorporation rate into Ge1–y Sn y growing layers has also decreased due to strain relaxation. Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge1–y Sn y epilayers with tuned Sn concentration and strain relaxation.

Investigating the mechanism of time dependent evolution of vertical graphene nanowalls

This work presents a time dependent multistage growth model for vertical graphene nanowalls (VGN). Factors mediating growth of VGN in both vertical and spatial direction at different stages were discussed. VGN films were deposited on Si (100) substrate using Radio Frequency Plasma-Enhanced Chemical Vapor Deposition technique by increasing the deposition time systematically for 15 min, 30 min, 60 min, 120 min, and 240 min, respectively. Scanning electron microscopy was carried out in both planar and cross section view to confirm the growth of VGN and quantification of its height. Atomic force microscopy was used to characterize the spatial growth of VGN. Raman scattering and in-plane GIXRD measurements were carried out to characterize the microstructure of VGN, which unveils that the strain relaxation and defects annihilation followed by increase in average crystallite size plays crucial role. Eventually, a schematic diagram was presented for time dependent evolution of VGN at different stages.

InP-based strain engineered InAs(Sb)/InAsPSb multiple quantum wells with tunable emission and high internal quantum efficiency enabled by Sb incorporation

A type I InAs(Sb)/InAsPSb strain engineered multiple quantum wells light emitting diodes system has been demonstrated. Tensile InAsPSb quantum barriers with a high degree of band offset (∆EC = 116–123 meV, ∆EV = 193–250 meV) were used to compensate for the high compressive strain of the InAs(Sb) quantum wells. The structure was grown on the n+-InAsxP1−x metamorphic buffer with a high degree of relaxation (98%), low surface roughness (0.69 nm), and low dislocation density. Through careful strain engineering design, the compressive strain of InAs(Sb) reaches 0.57%–1.52% without strain relaxation. The incorporation of Sb into the multiple quantum wells not only reduces the bandgap but also improves the interface quality by acting as an effective surfactant. Structural analysis reveals superior quality in InAsSb/InAsPSb multiple quantum wells compared to InAs/InAsPSb multiple quantum wells, demonstrating significantly reduced interface roughness and suppression of the Stranski–Krastanov growth mode. Room temperature electroluminescence measurements show a tunable emission wavelength ranging from 2.7 to 3.3 μm, accompanied by a narrow full width at half maximum value of 45 meV. Photoluminescence analysis indicates that the internal quantum efficiency of InAsSb/InAsPSb multiple quantum wells is 5.5%, which is 7 times higher than that of InAs/InAsPSb.

Suppression of cracking induced by epitaxial strain relaxation using a relaxation absorber during the transfer of epitaxial thin films of anatase-type Nb:TiO2

This work developed a technique for fabricating flexible epitaxial thin films of anatase-type Nb:TiO2 (epitaxial TNO) via a transfer process. In our prior work, epitaxial TNO deposited on LaAlO3 (001) single crystal substrates was lifted off and affixed to flexible polymeric sheets. However, many cracks occurred on the surfaces of the transferred thin films, such that the conductivity of the epitaxial TNO was drastically decreased. This loss of conductivity was attributed to the interruption of current paths by the cracks. These numerous cracks were linear and in most cases were oriented either parallel to the [100]anatase∥[100]LAO direction or parallel to the [010]anatase∥[010]LAO direction (where the subscripts anatase and LAO represent the materials for each Miller index). Therefore, cracking likely occurred as a consequence of the relaxation of epitaxial strain and a return to the original axial lengths of the TNO during the transfer process. In the present work, the surface of epitaxial TNO was coated with the ductile polymer SU-8 3050 as a relaxation absorber prior to the transfer. This modified transfer process greatly reduced crack formation in the TNO such that the conductivity of the thin film was improved by two orders of magnitude. Thus, pre-coating with a ductile relaxation absorber was shown to effectively suppress the cracking of flexible epitaxial TNO.

Time-dependent relaxation dynamics of remanent strain in textured PMN–PZ–PT and PMN–PIN–PT piezoceramics

Crystallographically textured lead-based piezoceramics, particularly Pb(Mg1/3Nb2/3)O3–PbZrO3–PbTiO3 (PMN–PZ–PT) and Pb(Mg1/3Nb2/3)O3–Pb(In1/2Nb1/2)O3–PbTiO3 (PMN–PIN–PT), play a pivotal role in electromechanical applications due to their enhanced field-induced strain responses. However, challenges in precision positioning arise from heightened remanent strain (Sr) caused by embedded templates in the textured grains, impacting strain cycle consistency due to increased time delay for Sr relaxation. This study investigates the time-dependent relaxation dynamics of Sr in textured PMN–PZ–PT and PMN–PIN–PT piezoceramics, focusing on experimentally determining relaxation time between cycles required for complete Sr relaxation. Our findings reveal that the relaxation time in textured piezoceramics is notably longer than that in their non-textured counterparts, primarily due to pinning of domain walls by embedded templates. This work provides insights into the strain relaxation characteristics of piezoceramics and underscores the importance of time delay in designing precision positioning systems for improved reliability.

Advanced SiGe:B Raised Sources and Drains for p-type FD-SOI MOSFETs

We have evaluated the feasability of selectively growing, with a chlorinated chemistry, 20 to 30 nm thick SiGe:B Raised Sources and Drains with Ge concentration gradients (from 50% down to 20%-30%, typically) on each side of FD-SOI transistors. The motivation was twofold: (i) inject meaningful amounts of compressive strain in the channel of p-type MOS devices thanks to high Ge concentrations in layers sitting in the same plane than Si or SiGe channels and (ii) benefit from lower Ge concentration SiGe layers on top that are easier to germano-silicide. Growing a thin Si(:B) cap on SiGe:B otherwise yields more uniform and stable contacts. We have thus studied the Si capping of SiGe 20% or 30% layers. As growth has to be conducted, for Si, at temperatures significantly higher than that of SiGe (750°C, to be compared with 700°C for SiGe 20% and 650°C for SiGe 30%, typically), we have quantified the impact of using temperature ramping-ups with SiH2Cl2 + HCl flowing into the growing chamber. The purpose of such active ramps was to prevent elastic strain relaxation, e.g. the formation of SiGe surface undulations that would happen with temperature ramps under H2 only.

Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer

The study comprehensively discussed the crystalline properties of GeSn(111) epitaxial layers on Si(111) using Ge double buffer layers toward the formation of the direct transition GeSn(111) with a Sn content around 10%. We found that the introduction of Ge double buffer layers is rather effective to improve the crystallinity of GeSn(111) than the single buffer case. However, thicker Ge buffer layer degrades the crystallinity of GeSn(111) because the strain relaxation of GeSn layer is likely to occur. In this study, through optimizing the thicknesses of Ge buffer layers formed at low and high temperatures (LT-Ge and HT-Ge, respectively), it was clarified that 100 and 500 nm for LT- and HT-Ge thicknesses, respectively, are suited to realize a high quality GeSn(111). The grown GeSn(111) epitaxial layer includes a Sn content of ~8–11% with a compressive strain of ~1–2%, which is contained within the region of direct transition GeSn(111).

Ultra-dense Green InGaN/GaN Nanoscale Pixels with High Luminescence Stability and Uniformity for Near-Eye Displays.

Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect. Herein, we report nanoscale pixelation of green InGaN/GaN LEDs incorporating strain-engineered ultra-dense nanowire (NW) arrays, corresponding to ∼36,000 pixels per inch. The NW pixel arrays exhibit a stable peak wavelength emission at ∼500 nm for over 3 orders of magnitude of injection current densities (from ∼4 A/cm2 to ∼1 kA/cm2). The observed wavelength stability enhancement (a reduced blue-shift of just ∼4 nm) directly results from the suppressed built-in electric field achieved by strain relaxation of the axial multi quantum wells in the NWs. Finite difference time domain simulations show that emission of the pixel array is significantly increased owing to the enhanced spontaneous emission rate (characterized by a high Purcell factor of ≈2) of the ultra-dense NWs. We have demonstrated top-down NWs, where each NW (diameter ranging down to 200 nm) shows excellent uniformity and light output characteristics in direct contrast to bottom-up grown NW heterostructures. The results of this study establish a viable route for realizing nanoscale pixels with high luminescence stability and wafer-scale uniformity with high (>20%) indium composition InGaN/GaN LED heterostructures, for next-generation near-eye displays.

Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy.

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te/Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te/Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with X-ray rocking curve full-width-at-half-maxima of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.

High-Mobility Carriers in Epitaxial IrO2 Films Grown using Hybrid Molecular Beam Epitaxy.

Binary rutile oxides of 5d metals such as IrO2 stand out in comparison to their 3d and 4d counterparts due to limited experimental studies, despite rich predicted quantum phenomena. Here, we investigate the electrical transport properties of IrO2 by engineering epitaxial thin films grown using hybrid molecular beam epitaxy. Our findings reveal phonon-limited carrier transport and thickness-dependent anisotropic in-plane resistance in IrO2 (110) films, the latter suggesting a complex relationship between strain relaxation and orbital hybridization. Magnetotransport measurements reveal a previously unobserved nonlinear Hall effect. A two-carrier analysis of this effect shows the presence of minority carriers with mobility exceeding 3000 cm2/(V s) at 1.8 K. These results point toward emergent properties in 5d metal oxides that can be controlled using dimensionality and epitaxial strain.

Synergistic effects of buton rock asphalt and BBOEA on the enhanced temperature resistance and flexibility of asphalt

To improve the toughness of transportation infrastructure and develop asphalt composite materials with both elasticity and toughness, this paper prepared Buton rock asphalt (BRA)/Bis[2-(2-butoxyethoxy)ethyl] adipate BBOEA composite modified asphalt. The evolution of high and low-temperature performance of the composite modified asphalt was explored through key asphalt indicators, dynamic shear rheology, and bending beam rheometer (BBR) tests. The performance improvement mechanism of the asphalt was investigated using Fourier transform infrared spectroscopy (FTIR). The addition of Buton rock asphalt effectively improved the high-temperature performance of the asphalt, raising the high-temperature PG grade from 64 to 70 and enhancing resistance to permanent deformation. The inclusion of 1.5 % BBOEA further enhanced low-temperature performance, reducing the stiffness modulus of BRA modified asphalt from 365 MPa to 260 MPa, a decrease of 26.9 %. This improvement is attributed to the polar adipate functional groups in BBOEA, which promote hydrogen bonding and dipole–dipole interactions with polar groups in the resins, reducing micelle size and asphalt rigidity. With the high-temperature performance remaining robust and low-temperature flexibility and strain relaxation greatly improved, the optimal BBOEA content is recommended at 1.5 % of the asphalt mass.

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Germanium tin (GeSn) is a material of interest for electronic and photonic device applications, but its development and commercialization have been limited by material quality issues and lack of availability from epitaxy suppliers. In this paper, we report initial studies in optimizing GeSn films deposited on a Ge buffer layer grown on 200-mm diameter silicon (Si) substrates with an ASM Epsilon 2000 chemical vapor deposition reactor designed for commercial production. Using a single-step growth process, a Sn content up to 22% near the surface of a GeSn film was achieved due to the increase in Sn incorporation via strain relaxation. A two-step growth process resulted in a bilayer structure with a nearly 100% relaxation on the first layer, followed by a higher quality GeSn layer with 18% Sn as evident by a high photoluminescence intensity emitting in the mid-wave infrared region at 3.2 μm at 20 K.

Bond-slip models on interfacial behavior between Fe-SMA and steel in hygrothermal environments

Strengthening the existing steel structures to enhance performance can prolong their service life and reduce carbon emissions. Previous studies have employed iron-based shape memory alloy (Fe-SMA) to adhesively and actively retrofit long-span steel bridges in practice, achieving satisfactory repair efficiency. Nonetheless, concerns persist regarding the long-term performance of Fe-SMA-bonded parent structures, principally stemming from the performance degradation of the adhesives in hygrothermal environments. In this study, the damage evolution and debonding mechanisms of Fe-SMA/steel single-lap joints (SLJs) in hygrothermal environments are investigated through 54 lap-shear tests. The evolutionary process of Fe-SMA strain and shear stress within the overlapping zone is assessed, varying with aging time and adhesive type under shear load. Furthermore, the bond-slip models of the Fe-SMA/steel SLJs are put forward, which change with the aforementioned influencing factors in hygrothermal environments. The lap-shear tests demonstrate that the ultimate shear stress of SLJs is transmitted approximately up to 50 mm away from the initial end, with shear stress developing swiftly towards the free end during this phase. In hygrothermal environments, the effective overlapping length of the SLJs is highly contingent on the material properties of adhesives, improving with the prolonged aging time. This study proposes bond-slip models that describe the interfacial performance between Fe-SMA and steel, accounting for the detrimental influence of temperature, humidity, plastic deformation of components and strain relaxation. The experimental outcomes can guide the analysis of the debonding characteristics of Fe-SMA-bonded structures, and the theoretical study can provide reliable predictions for the service performance of reinforcement systems in hygrothermal environments.

Inverted V-shaped size-dependent emission wavelength shift in InGaN micro-LEDs with size down to 1 μm

The size-dependent emission wavelength shift of micro-scale light emitting diodes (micro-LEDs) has been frequently reported in recent publications, but its underlying physical mechanism has not yet been thoroughly elucidated. Here, we fabricate and characterize the red, green, and blue InGaN micro-LED mesas with different diameters down to 1 μm. As the size decreases, all the samples of different colors show an inverted V-shaped photoluminescence wavelength variation trend, first a red shift and then a blue shift, and the shifting range is larger for samples with longer wavelengths. Micro-Raman spectrum confirms that the stress was significantly released after scaling down the size from epitaxial wafer to 1 μm. The theoretical simulations show that the red and blue shifts are, respectively, attributed to the bandgap narrowing and the weakening of the quantum-confined Stark effect caused by strain relaxation, which dominate successively.

Dissociation of [formula omitted] misfit dislocation at the interface of α-Ga2O3 thin film deposited on m-plane sapphire

In this study, α-Ga2O3 films of thickness about 1 μm were epitaxially deposited on m-plane sapphire substrate by halide vapor phase epitaxy. The lattice mismatch between α-Ga2O3 and sapphire substrate is about 3.5 % along c-axis and 4.8 % along a-axis, resulting in the formation of misfit dislocations. High-angle annular dark-field scanning transmission electron microscopy was employed to study the misfit dislocations at the α-Ga2O3/sapphire interface. The study was carried out along the [112‾0] zone axis and focused on the dislocations responsible for a misfit strain relaxation along c-axis. The resulting magnitude of the projected Burgers vector onto (112‾0) plane has been compared with the estimated values for 13<1‾101> and 13<2‾021> dislocations. It has been revealed, that misfit dislocations tend to dissociate into partial dislocations at the interface.

The modified physics-informed neural network (PINN) method for the thermoelastic wave propagation analysis based on the Moore-Gibson-Thompson theory in porous materials

This paper presents novel contributions to both theory and solution methodology in AI-based analysis of solid mechanics. The physics-informed neural network (PINN) method is developed for thermoelastic wave propagation and Moore-Gibson-Thompson (MGT) coupled thermoelasticity analysis of porous media, a first in the field. The coupled thermoelasticity governing equations, based on the MGT heat conduction model, are derived for a porous half-space, with the thermal relaxation coefficient and strain relaxation factor being considered. Mechanical and thermal shock loading boundary conditions are imposed. The behavior of a magnesium-made porous body is analyzed using the PINN method, with highly accurate results being achieved for the system of coupled PDEs. An adaptive hyperparameter tuning approach, integrating a generalized subset design (GSD) and Bayesian optimization algorithm, is used to automatically select the optimal structure based on the L2 relative error. This hybrid methodology eliminates manual adjustment concerns. The proposed method is verified through a thorough comparison with the Lord-Shulman theory of coupled thermoelasticity. The strength of the methodology lies in its ability to operate without domain data, with only boundary and initial points being required. Four example sets are examined to demonstrate the capabilities of the modified PINN, and high-quality predictions of dimensionless fields’ variables over an extended time interval are obtained, confirming its extrapolation abilities.

Relaxation of Steric Strains of TTR-Type Amyloid Fibril Inhibitors Radically Changes the Results of Their Virtual Screening

Relaxation of Steric Strains of TTR-Type Amyloid Fibril Inhibitors Radically Changes the Results of Their Virtual Screening