Strain-mediated Magnetoelectric Coupling Research Articles

Bias voltage modulated electric transport properties in Fe65Co35/Hf0.5Zr0.5O2 films

We demonstrate the bias voltage modulated electric transport properties in Fe65Co35 (FeCo) films deposited on Hf0.5Zr0.5O2 (HZO) films. Intrinsic multiferroicity have been characterized for the FeCo/HZO heterostructures by analyzing the ferroelectric polarizations and imaging the magnetic domains. We show that, upon the application of bias voltages on the FeCo/HZO heterostructures, the current-voltage (I-V) curves of FeCo films can be regulated, giving rise to different resistance states, enabled partly by strain-mediated magnetoelectric coupling effect. The strain coupling effect between HZO and FeCo films is elucidated by simulating the volumetric strain of the FeCo/HZO films under the action of applied voltages. Through additional analysis, the bias voltage modulated electric transport properties could also be linked with charge-mediated magnetoelectric coupling effect. We anticipate that our work will inspire further studies on low-power consumption and high-density electronic devices.

Magnetization switching by electric field in ZnFe2O4/ZnO heterostructure

We have fabricated the ZnFe2O4/ZnO (ZFO/ZnO) heterostructure on a silicon substrate by pulsed laser deposition technique and studied the magnetization switching by the electric field in the ZFO/ZnO heterostructure using an indigenously developed optical cantilever beam magnetometer setup. The magnetization (M) vs electric field (E) curve reveals that the magnetization of the ZFO film has been switched by an electric field applied along the thickness of the ZnO film. The saturation magnetization is found to be 28.77 MA/m from the M–E curve. The emergence of electric field-driven magnetization switching in the ZFO/ZnO heterostructure is attributed to the strain-mediated magnetoelectric coupling between the electric polarization of the ZnO film and the magnetization of the ZFO film as evidenced by the butterfly-type hysteresis behavior of magnetization with the applied electric field. However, the realization of electric field-controlled magnetization switching in the ZFO/ZnO heterostructure is regarded as a potential aspect for the fabrication of energy-efficient spintronic devices such as magnetoelectric random access memory cells, highly sensitive magnetic field sensors, magneto-logic devices, and neuromorphic devices.

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers.

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.

Non-volatile voltage-controlled magnetization in single-phase multiferroic ceramics at room temperature

Single-phase multiferroics (MFs) exhibiting ferroelectricity and ferromagnetism and the strong magnetoelectric (ME) coupling effect at room temperature are seen as key to the development of the next-generation of spintronic devices, multi-state memories, logic devices and sensors. Herein, the single-tetragonal phase (1–x) (Sr0·3Bi0·35Na0·329Li0.021)TiO3-xBiFeO3 (x = 0.2 or 0.4) system was designed to study the intrinsic ME coupling effect at room temperature and high frequencies. The polarization arises from the cooperative displacement of both Fe3+ and Ti4+ relative to the oxygen sublattice in the tetragonally distorted perovskite structure, and the magnetization stems from indirect exchange magnetic interaction between adjacent iron ions. A switchable voltage-controlled magnetization was confirmed by a change of the coercive magnetic field, Hc, and remnant magnetization, Mr, in the x = 0.4 component subjected to an external electric field at room temperature and was possibly attributed to a strain-mediated ME coupling effect. In addition, resonance behaviours of the complex magnetic permeability and complex dielectric permittivity in the GHz band indicate that this ME effect is intrinsic in nature and could broaden the applications of multiferroics to devices operating at microwave frequencies.

Electric Field Switching of Magnon Spin Current in a Compensated Ferrimagnet.

Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can usually be modulated by magnetic field or current-induced spin torques. However, these approaches may lead to energy dissipation due to Joule heating. Electric-field switching of magnon spin current without charge current is highly preferred but challenging to realize. By integrating magnonic and piezoelectric materials, the manipulation of the magnon spin current generated by the spin Seebeck effect in the ferrimagnetic insulator Gd3Fe5O12 (GdIG) film on a piezoelectric substrate is demonstrated. Reversible electric-field switching of magnon polarization without applied charge current is observed. Through strain-mediated magnetoelectric coupling, the electric field induces the magnetic compensation transition between two magnetic states of the GdIG, resulting in its magnetization reversal and the simultaneous switching of magnon spin current. This work establishes a prototype material platform that paves the way for developing magnon logic devices characterized by all electric field reading and writing and reveals the underlying physics principles of their functions.

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures.

Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.

High SNR magnetoelectric sensor with dual working modes for wideband magnetic field detection

Magnetoelectric (ME) composites exhibit extremely high sensitivity for magnetic field at the fixed resonant frequency, due to the strong strain-mediated ME coupling. However, wideband magnetic field detection is still challenging, as the ME coefficient depends strongly on the frequency. In this work, we propose a magnetoelectric sensor composed of three ME units in series/parallel connections, which works at dual modes to extend the frequency range with high signal-to-noise ratio (SNR). The SNR is enhanced by about 22.68 dB and the bandwidth is broadened from 100 Hz to 1 kHz, with a high sensitivity for frequency conversion mode by series/parallel connections. Limits of detections (LoDs) as low as 207 pT and 460 pT are demonstrated at 1 kHz and 100 kHz, respectively, showing promising applications in wideband magnetic field detection.

Epitaxial growth and electric control of magnetic behaviors in exchange biased IrMn/FeGa/MgO/PMN-PT heterostructures

We grew exchange biased (001)-textured IrMn/epitaxial FeGa bilayers on ferroelectric PMN-PT(001) substrate with assistance of an MgO buffer layer and investigated the electric control of magnetic behaviors. The as-grown sample exhibits square, asymmetrically shaped, and two-step loops at different magnetic field orientations due to the combined effect of the intrinsic magnetocrystalline anisotropy and the collinear uniaxial and unidirectional magnetic anisotropies, which can be interpreted by the magnetization reversal of domain wall nucleation. After polarized by an electric field, another kind of asymmetrically shape loops with three steps in the descending and two steps in the ascending branch is additionally observed because the uniaxial magnetic anisotropy is greatly enhanced and becomes perpendicular to the exchange bias. The angular dependent magnetic behavior suggests the exchange bias is slightly rotated by the electrically induced strain. The electric field dependence of coercive field and uniaxial magnetic anisotropy exhibit an asymmetrical butterfly-like shape, indicating a strain-mediated magnetoelectric coupling with a net 109° polarization switching of PMN-PT.

Voltage-controlled magnetic double-skyrmion states in magnetoelectric elliptical nanostructures by phase-field model

The magnetic skyrmions are promising candidates as information carriers for future energy-efficient spintronic devices (e.g. memory, sensor, logic). Moreover, manipulating elliptically distorted skyrmions can result in a variety of novel functions that differ from those of conventional circular skyrmions. Despite the tremendous prospects, achieving voltage-driven dynamics of the elliptically distorted skyrmions remains a key challenge. Here, we employ dynamical phase-field simulations that consider the strain-mediated magnetoelectric coupling to demonstrate electric field manipulates the dynamic behavior of the elliptically distorted skyrmions. This study finds that the elliptically distorted skyrmions can split into smaller-sized circular skyrmions and reversibly switch between the single domain - single skyrmion and single domain - double skyrmion on elliptical nano-islands. The stabilization of magnetic skyrmions and double skyrmions in multiferroic heterostructures essentially depends on the ratio of the major axis and the minor axis of the elliptical nono-islands. Intriguingly, the operation is non-volatile and exhibits a multistate character. The temporal behavior of energy density variations during the evolution of magnetic domain structures indicates that the electric-field manipulation of skyrmions originates from the competition between elastic, demagnetization, and anisotropic energies. Our work shows that deterministic switching of multiple domain structures on elliptical nano-islands is achievable, indicating the morphology is a new degree of freedom for manipulating the voltage-driven dynamics of skyrmions, providing a novel avenue to develop magnetoelectric coupling-based memory devices, logic devices, sensor devices, etc., at the nanoscale. Impact statementThis research aims to construct a unique multi-state storage device as well as to indicate the morphology is a new degree of freedom for manipulating the voltage-driven dynamics of skyrmions, giving a fresh way to create nanoscale magnetoelectric coupling-based memory, logic, sensor, and other devices.

Switching magnetic strip orientation using electric fields.

In spintronics, ordered magnetic domains are important for magnetic microdevices and controlling the orientation of ordered magnetic domains is important for applications such as domain wall resistance and spin wave propagation. Although a magnetic field or a current can reorient ordered magnetic domains, an energy-efficient electric-field-driven rotation of the ordered magnetic domains remains elusive. Here, using a nanotrenched polymeric layer, we obtain ordered magnetic strip domains in Ni films on a ferroelectric substrate. By applying electric fields to the ferroelectric substrate, we demonstrate that the ordered magnetic strip domains in Ni films are switched between the y- and x-axes driven by electric-fields. This switching of magnetic strip orientation is attributed to the electric-field-modulated in-plane magnetic anisotropies along the x- and y-axes of the Ni films, which are caused by the anisotropic biaxial strain of the ferroelectric substrate via strain-mediated magnetoelectric coupling. These results provide an energy-efficient approach for manipulating the ordered magnetic domains using electric fields.

Deterministic magnetic moment rotation in antiferromagnetic material by piezoelectric strain modulation

Antiferromagnetic (AFM) spintronic devices play a vital role in the development of novel spintronic devices due to their attractive features. Herein, the interfacial state manipulation of the AFM IrMn material is investigated by combining a ferroelectric single crystal Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) with an electric field (E-field)-controlled magnetic moment arrangement of the IrMn film. A PMN-PT/Cu/IrMn/NiFe heterostructure is chosen to confirm the deterministic manipulation of AFM interfacial states and its angle of magnetic moment rotation. The appropriate thickness of the Cu layer is selected to disrupt the strain-mediated magnetoelectric coupling between the NiFe layer and PMN-PT substrate. The NiFe film reference layer can reflect the variation in AFM interfacial states via the exchange bias. When the E-field is applied, an in-plane piezoelectric strain is produced. If IrMn responds to the strain, its magnetic moment rotates from [001] to [1−10] depending on the crystal orientation of PMN-PT. Based on the experimental results and theoretical analyses, a rotation in the magnetic moment of the IrMn layer by ~20° is confirmed. This work provides convincing evidence for the manipulation of E-field-controlled AFM interfacial states and describes a reliable method for achieving the rotation angle of AFM moments, which can help to accelerate the development of AFM spintronic devices.

Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications

Flexible microelectromechanical (MEMS) devices are poised to scaffold technological innovations in the fields of wearable sensors, implantable health monitoring systems and touchless human-machine interaction. Here, we report the magnetoelectric properties of cost-effective and room-temperature sensitive 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3/Ni50Mn35In15 (PMN-PT/ferromagnetic shape memory alloy (FSMA)) multiferroic heterostructure integrated on flexible stainless steel substrate via RF/DC magnetron sputtering technique. The growth of the pure perovskite phase of PMN-PT without any pyrochlore impurity is confirmed by the dominant (002) orientation of the tetragonal PMN-PT. The double logarithmic plot of current density with electric field validates the Ohmic conduction mechanism with low leakage current density of ∼10−6 A cm−2. The anomaly observed in temperature-dependent dielectric and ferroelectric characteristics of the heterostructure overlap with the martensite transformation regime of the bottom Ni–Mn–In (FSMA) layer. The PMN-PT/Ni–Mn–In multiferroic heterostructure exhibits a significant magnetodielectric effect of ∼3% at 500 Oe and can be used as an ultra-sensitive room-temperature magnetic field sensor. These results have been explained by an analytical model based on strain-mediated magnetoelectric coupling between interfacially coupled PMN-PT and Ni–Mn–In layers of the multiferroic heterostructure. Furthermore, the excellent retention of magnetodielectric response up to 200 bending cycles enhances its applicability towards flexible MEMS devices. Such PMN-PT based multiferroic heterostructures grown over the flexible substrate can be a potential candidate for piezo MEMS applications.

Magnetoelectric behavior and magnetic field-tuned energy storage capacity of SrFe12O19 nanofiber reinforced P(VDF-HFP) composite films

• Fabrication of flexible magnetoelectric (ME) P(VDF-HFP)/SrFe 12 O 19 composite films. • Inclusion of SrFe 12 O 19 nanofiber enhances the polar β-phase in P(VDF-HFP) matrix. • P(VDF-HFP)/SrFe 12 O 19 films exhibit enhanced dielectric and ferroelectric properties . • A strong strain mediated ME coupling exists in the P(VDF-HFP)/SrFe 12 O 19 films. • P(VDF-HFP)/SrFe 12 O 19 films' energy storage capacity is tuned by magnetic fields. Flexible, self-standing magnetoelectric (ME) polymer composite films were prepared using the solution casting method by reinforcing one-dimensional ferromagnetic strontium ferrite (SrFe 12 O 19 ) nanofibers, synthesized using the electrospinning method, into poly(vinylidene fluoride–hexafluoropropylene) (P(VDF-HFP)) matrix. The effects of loading of SrFe 12 O 19 nanofibers on the functional, structural, magnetic, dielectric, and ferroelectric properties of P(VDF-HFP) were investigated. The loading enhanced the electroactive β-phase of the films, as confirmed by XRD and FTIR analyses. The ME coupling that existed in the composite films was confirmed by the changes in ferroelectric parameters under various magnetic fields. The energy storage capacity and dielectric constant of the composite films were enhanced with the addition of SrFe 12 O 19 nanofibers, with the maximum values of 56 at 100 Hz and 1678 mJ/cm 3 at 444 kV/cm, respectively, in the composite film with 20 wt% SrFe 12 O 19 nanofibers. The energy storage capacity was further enhanced and tuned by applying an external magnetic field. Thus, this work reports an innovative approach to tuning the energy storage capacity of ME polymer composite films through a magnetic field and also describes use of these films for a wide range of applications, such as energy storage and memory devices and magnetic sensors.

Electrical manipulation of magnetization in magnetic heterostructures with perpendicular anisotropy

Magnetic materials with perpendicular magnetic anisotropy are significant for spintronics due to their potential to develop high-density magnetic memory with high thermal stability. Many methods have developed to manipulate perpendicular magnetization by electric current or electric field rather than magnetic field for realizing energy-efficient spintronics. In this review, we primarily focus on recent progress on electrical manipulation of perpendicular magnetization through spin-orbit torque and strain-mediated magnetoelectric coupling. We aim to summarize field-free switching of perpendicular magnetization and exchange bias induced by spin-orbit torque in the metallic magnetic heterostructures, spin-orbit torque switching of magnetization in the perovskite oxides, and magnetoelectric control of perpendicular magnetization mediated by piezostrain in multiferroic heterostructures. Finally, our perspectives on electrical manipulation of perpendicular magnetization by spin-orbit torque and magnetoelectric coupling are given to realize practical energy-efficient spintronic devices.

Electric-Field Control of Magnetoresistance Behavior in a Conetic Alloy Thin Film/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

In this work, we investigate the influence of electric fields (E-fields) on the room-temperature magnetotransport behavior of an artificial multiferroic heterostructure, a Conetic alloy (Ni77Fe14Cu5Mo4) thin film/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (011). When the external magnetic field is parallel to the applied current, the switching field increases from 0.8 to 3.3 Oe at 0 and 8 kV/cm, respectively, and the corresponding magnetoresistance (MR) ratio at 20 Oe respectively decreases from 0.14% to 0.03% at 0 and 8 kV/cm. However, when the external magnetic field is perpendicular to the current, the switching field decreases from 10.1 to 1.7 Oe at 0 and 8 kV/cm, and the MR ratio in such a case decreases from −0.001% to −0.10%, respectively. Consequently, under the parallel and perpendicular modes, the tunabilities of the switching field are approximately +313% and −83%, and the MR ratio tunabilities under E-fields are approximately −79% and +9,900%, respectively. Such a large and anisotropic tunability of both the switching field and MR ratio is attributed to the ultrasoft magnetic property of the Conetic alloy thin film and anisotropic in-plane strain-mediated magnetoelectric coupling. However, the anisotropic MR ratio is approximately 0.15% and does not vary with the applied E-fields owing to the intrinsic property of Conetic thin films using transfer and circle transfer curve measurements, rather than the magnetization rotation caused by E-field-induced magnetoelastic anisotropy. This work demonstrates that multiferroic heterostructures with electrically tunable MR show considerable potential in designing energy-efficient electronic and spintronic devices.

Tutorial: Piezoelectric and magnetoelectric N/MEMS—Materials, devices, and applications

Nano- and micro-electromechanical systems (N/MEMSs) are traditionally based on electrostatic or piezoelectric coupling, which couples electrical and mechanical energy through acoustic resonator structures. Most recently, N/MEMS devices based on magnetoelectrics are gaining much attention. Unlike electrostatic or piezoelectric N/MEMS that rely on an AC electric field or voltage excitation, magnetoelecric N/MEMS rely on the electromechanical resonance of a magnetostrictive/piezoelectric bilayer heterostructure exhibiting a strong strain-mediated magnetoelectric coupling under the excitation of a magnetic field and/or electric field. As a consequence, magnetoelectric N/MEMS enable unprecedented new applications, ranging from magnetoelectric sensors, ultra-compact magnetoelectric antennas, etc. This Tutorial will first outline the fundamental principles of piezoelectric materials, resonator design, specifically different acoustic modes, and piezoelectric-based N/MEMS applications, i.e., radio frequency front end filters and infrared radiation sensors. We will then provide an overview of magnetoelectric materials and N/MEMS focusing on the governing physics of the magnetoelectric effect, magnetic material properties for achieving high magnetoelectric coupling, state-of-the-art magnetoelectric N/MEMS devices, and their respective applications.

Voltage-driven strain-mediated modulation of exchange bias in Ir20Mn80/Fe80Ga20/Ta/⟨011⟩-oriented PMN-32PT heterostructures

Manipulation of exchange bias with electric field is appealing to boost energy efficiency in spintronic devices. Here, this effect is shown at room temperature in Ir20Mn80/Fe80Ga20/Ta layers grown onto ⟨011⟩-oriented PMN-32PT single crystals. After magnetic field-cooling (FC) along the [01-1] and [100] in-plane directions of PMN-32PT and upon allowing the system to relax through consecutive hysteresis loops (training effect), the exchange bias field (HEB) is measured under the action of voltage (out-of-plane poling). Depending on the applied voltage (magnitude and sign), HEB can either increase or decrease with respect to its value at 0 V. The relative variations of HEB are 24% and 5.5% after FC along the [01-1] and [100] directions, respectively. These results stem from strain-mediated magnetoelectric coupling. The applied electric field causes changes in the coercivity and the squareness ratio of the films, suggesting a reorientation of the effective magnetic easy axis in Fe80Ga20. However, larger HEB values are observed when the squareness ratio is lower. It is claimed that the effect of voltage is equivalent to an in-plane component of an applied magnetic field oriented perpendicular to the cooling field direction. Perpendicular in-plane magnetic fields have been shown to induce an increase in exchange bias in some ferromagnetic/antiferromagnetic systems due to partial recovery of the untrained antiferromagnetic state. Remarkably, here, this effect is directly induced with voltage, therefore enhancing energy efficiency.

Low-voltage magnetoelectric coupling in membrane heterostructures.

Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low-power multifunctional devices. Relaxor-FEs, such as (1 − x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates because of their giant piezoelectricity. However, thin films of PMN-PT suffer from substrate clamping, which substantially reduces piezoelectric in-plane strains. Here, we demonstrate low-voltage ME coupling in an all-thin-film heterostructure that uses the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90° Ni magnetization rotation with 3 V PMN-PT bias, much less than the bulk PMN-PT ~100-V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step toward understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven ME heterostructures.

Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures.

Nonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive. Herein, Co/MgO/CoFeB magnetic tunnel junctions (MTJs) exhibiting dipole interaction on ferroelectric substrates are fabricated. Remarkably, nonvolatile voltage control of the resistance in the MTJs is demonstrated, which originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. Conversely, for an isolated CoFeB magnet, this volatile strain induces volatile control of magnetism. These results reveal that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets. The findings highlight the role of dipole interaction in multiferroic heterostructures and can stimulate future research on nonvolatile electrical control of magnetism with additional interactions.

Nonvolatile voltage-controlled magnetization reversal in a spin-valve multiferroic heterostructure

Pure voltage-controlled magnetism, rather than a spin current or magnetic field, is the goal for next-generation ultralow power consumption spintronic devices. To advance toward this goal, we report a voltage-controlled nonvolatile 90° magnetization rotation and voltage-assisted 180° magnetization reversal in a spin-valve multiferroic heterostructure. Here, a spin valve with a synthetic antiferromagnetic structure was grown on a (110)-cut Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrate, in which only the magnetic moment of the free layer can be manipulated by an electric field (E-field) via the strain-mediated magnetoelectric coupling effect. As a result of selecting a specified PMN-PT substrate with defect dipoles, nonvolatile and stable magnetization switching was achieved by using voltage impulses. Accordingly, a giant, reversible and nonvolatile magnetoresistance modulation was achieved without the assistance of a magnetic field. In addition, by adopting a small voltage impulse, the critical magnetic field required for complete 180° magnetization reversal of the free layer can be tremendously reduced. A magnetoresistance ratio as large as that obtained by a magnetic field or spin current under normal conditions is achieved. These results indicate that E-field-assisted energy-efficient in-plane magnetization switching is a feasible strategy. This work is significant to the development of ultralow-power magnetoresistive memory and spintronic devices.