This study addresses the problem of the critical thickness of an epilayer grown on a finite substrate with different elastic constants. The principle of superposition and Fourier integral methodology are used to solve the displacement and stress fields that satisfy the boundary conditions. The change in strain energy caused by the introduction of a misfit dislocation is defined as the dislocation formation energy E f. Meanwhile, the epilayer thickness, corresponding to E f=0, is the epilayer critical thickness h c. This investigation reveals a promising characteristic of using a thin substrate, namely that when the substrate is very thin and the shear modulus ratio of epilayer over substrate is 1/10, then if the corresponding h c is smaller than the substrate thickness, h c will decrease as the shear modulus ratio increases. However, if the corresponding h c is greater than the substrate thickness, h c markedly increases with an increase of the shear modulus ratio, becoming infinite. When the substrate is very thin, the h c also increases rapidly with the epilayer (substrate) Poisson ratio and finally reaches infinity; however, the pattern differs from that of the variation in the ratio of the shear modulus. If the substrate becomes thinner and transforms into a diaphragm structure, the epilayer critical thickness reaches infinity, regardless of the magnitude of the shear modulus ratio, epilayer, and substrate Poisson ratio. Results obtained when the epilayer and substrate share identical elastic constants are compared with those of Zhang et al. and Fruend and Nix. The present result lies between those obtained in these two earlier studies.
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