States In Superlattices Research Articles

Thermal conductivities of different period Si/Ge superlattices

Thermoelectric materials, which can convert wasted heat into electricity, have attracted considerable attention because they provide a solution to energy problems. The Si/Ge superlattices have shown tremendous promise as effective thermoelectric materials. The period lengths of the Si/Ge superlattices can effectively tailor the phonon's transport behaviors and control their thermal conductivities. In this paper, three kinds of Si/Ge superlattices with different period length distributions (uniform, gradient, random) are constructed. The non-equilibrium molecular dynamics (NEMD) method is used to calculate the thermal conductivities of Si/Ge superlattices under the different period length distributions. The effect of the sample’s total length and temperature on the superlattice's thermal conductivity are studied. The simulation result shows that the thermal conductivity of gradient and random periodical Si/Ge superlattices are significantly reduced at room temperature compared with that of the uniform period Si/Ge superlattices. Phonons are transported by wave or particle properties in the different periodical superlattices. The thermal conductivity of uniform period superlattices has an obvious size effect with the increasing of the sample total length. In contrast, the thermal conductivity of gradient, random periodical Si/Ge superlattices are weakly dependent on the sample’s total length. At the same time, temperature is an important factor affecting the heat transport properties. We find that the temperature affects the thermal conductivities of the three kinds of superlattices in different ways. With the increase of the temperature, (i) the thermal conductivity of uniform periodical superlattices shows an obvious temperature effect; (ii) the thermal conductivity of the gradient and random periodical Si/Ge superlattices are nearly unchanged due to the competition between phonon localization weakness and phonon-phonon scattering enhancement. In addition, the phonon densities of states of superlattices with three different periodical length distributions are calculated. We find that in the picture of uniform periodical Si/Ge superlattices, the number of pronounced peaks quickly decreases as the period length increases, particularly at higher frequencies. This indicates that as the period length increases, fewer coherent phonons will be formed over the superlattices. Moreover, the scattering mechanisms of phonons for gradient and random periodical Si/Ge superlattices are basically the same at 100 K and 500 K. These findings provide a developmental way to further reduce the thermal conductivity of superlattices.

Evidence of flat bands and correlated states in buckled graphene superlattices.

Two-dimensional atomic crystals can radically change their properties in response to external influences, such as substrate orientation or strain, forming materials with novel electronic structure1-5. An example is the creation of weakly dispersive, 'flat' bands in bilayer graphene for certain 'magic' angles of twist between the orientations of the two layers6. The quenched kinetic energy in these flat bands promotes electron-electron interactions and facilitates the emergence of strongly correlated phases, such as superconductivity and correlated insulators. However, the very accurate fine-tuning required to obtain the magic angle in twisted-bilayer graphene poses challenges to fabrication and scalability. Here we present an alternative route to creating flat bands that does not involve fine-tuning. Using scanning tunnelling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically flat substrate can be forced to undergo a buckling transition7-9, resulting in a periodically modulated pseudo-magnetic field10-14, which in turn creates a 'post-graphene' material with flat electronic bands. When we introduce the Fermi level into these flat bands using electrostatic doping, we observe a pseudogap-like depletion in the density of states, which signals the emergence of a correlated state15-17. This buckling of two-dimensional crystals offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat bands.

Effect of the Optical Pumping and Magnetic Field on the States of Phase Separation Domains in Eu0.8Ce0.2Mn2O5

The effect of optical pumping and applied magnetic field on the characteristics of ferromagnetic layers in one-dimensional superlattices is studied. At low enough temperatures, these layers correspond to phase separation domains in RMn_2O_5 and R_{0.8}Ce_{0.2}Mn_2O_5 multiferroics. The formation of such domains occurs owing to the charge ordering of Mn^{3+} and Mn^{4+} ions and to the finite probability for e_g electrons to tunnel between these pairs of ions. The volume occupied by such superlattices is rather small, and they can be treated as isolated ferromagnetic semiconductor heterostructures, spontaneously formed in the host crystal. The sequences of ferromagnetic resonances related to the superlattice layers in Eu_{0.8}Ce_{0.2}Mn_2O_5 are studied. The characteristics of these resonances give information on the properties of such layers. For the first time, it is demonstrated that the optical pumping gives rise to a new metastable state of superlattices, which can be recovered by the magnetic field cycling to the state existing before the optical pumping. It is found that the superlattices recovered by the magnetic field exist up to temperatures higher than those in as-grown crystals.

Optical states in a 1D superlattice with multiple photonic crystal interfaces

Interface states in a 1D photonic crystal heterostructure with multiple interfaces are examined. The heterostructure is a periodic network consisting of two different photonic crystals. In addition, the two crystals themselves are periodic, with one being made of alternating binary layers and the other being a quaternary crystal with a tunable layer. The second crystal can thus be smoothly transformed from one binary crystal to another. All individual photonic crystals in the superstructure have symmetric unit cells, as well as identical periods and optical path lengths. Therefore, as the tunable layer in the quaternary crystal expands, other layers will shrink. It is found that the behavior of the localized modes in the band gaps is dependent on whether there is an even or odd number of interfaces in the heterostructure. With certain sequences of all dielectric photonic crystals, topological states are shown to split in two, whereas for other heterostructures they are shown to vanish. Additional resonant Tamm states appear depending on how many crystals are in the heterostructure. If the tunable layer is frequency dependent, the band gap can still support topological/resonant modes with some band gaps even supporting two separate groups.

Topological Mott insulator with bosonic edge modes in one-dimensional fermionic superlattices

We investigate topological phase transitions driven by interaction and identify a novel topological Mott insulator state in one-dimensional fermionic optical superlattices through numerical density matrix renormalization group (DMRG) method. Remarkably, the low-energy edge excitations change from spin-1/2 fermionic single-particle modes to spin-1 bosonic collective modes across the phase transition. Due to spin-charge separation, the low-energy theory is governed by an effective spin superexchange model, whereas the charge degree of freedom is fully gapped out. Such topological Mott state can be characterized by a spin Chern number and gapless magnon modes protected by a finite spin gap. The proposed experimental setup is simple and may pave the way for the experimental observation of exotic topological Mott states.

Field-induced insulating states in a graphene superlattice

We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moir\'e modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles.

Antiferromagnetic Interfacial Coupling and Giant Magnetic Hysteresis in La0.5Ca0.5MnO3–SrRuO3 Superlattices

Superlattices are of great importance due to their potential as new materials genome to synthesize new functional materials. Thus, tuning of the ground state of superlattices is crucial to further control their physical properties. In this study, superlattices (SLs) consisting of alternating layers of SrRuO3 (SRO) (5 nm) and La0.5Ca0.5MnO3 (LCMO) (5 nm) are epitaxially grown on SrTiO3 (STO) and LaAlO3 (LAO) substrates with 10-unit-cell periods. A variation in the substrate-induced-strain for this choice of SLs triggers observation of remarkable properties, such as magnetic anisotropy and large magnetic hysteresis. The strain states experienced by LCMO and SRO in these SLs result in strong ferromagnetic interlayer coupling and weak antiferromagnetic interlayer coupling at low temperatures in SLs of LCMO–SRO/STO and a strong antiferromagnetic interlayer coupling in SLs of LCMO–SRO/LAO. Besides, a large magnetic hysteresis resulting from the predominant magnetic anisotropy of SRO together with the strength of magnetic coupling is observed in SLs of LCMO–SRO/LAO along the out-of-plane direction of the LAO substrate. These four different magnetic behaviors along four different directions of substrate orientations are interpreted in terms of preferential orbital occupation and competing magnetic exchange coupling together with magnetic anisotropy. This study demonstrates the subtleties in controlling the strength of magnetic coupling at the interface and stands as a model system to realize fascinating magnetic phenomena in layer-by-layer hetero-epitaxial oxide films.

Interband absorption in PbTe/PbSnTe-based type-II superlattices

Short-period PbTe/Pb1−xSnxTe/CaTe (x = 0.36, 0.48) superlattices were prepared on a KCl (100) substrate and their interband optical absorption was measured. The superlattice indicated strong absorption of more than 2500 cm−1, corresponding to the electron transition from the first valence subband in the PbSnTe layer to the conduction subband in the PbTe layer, which can give enough optical gain for laser operation under inversion population. The absorption coefficient increased with lowering of temperature in the wavelength region from 7 to more than 20 μm. The enhancement of the absorption coefficient was explained by the enhancement of the overlap of wave functions and the two-dimensional density of states in the type-II superlattice retaining a large value even with reduced band gap. The conduction-band offset of the PbTe/Pb0.64Sn0.36Te type-II heterojunction was estimated to be 120 meV.

Tunable Dirac interface states in topological superlattices

Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the massless Dirac states that occur at material surfaces. In this work, we experimentally and theoretically introduce a platform where this hybridization can be continuously tuned: the Pb1-xSnxSe topological superlattice. In this system, topological Dirac states occur at the interfaces between a topological crystalline insulator Pb1-xSnxSe and a trivial insulator, realized in the form of topological quantum wells (TQW) epitaxially stacked on top of each other. Using magnetooptical transmission spectroscopy on high quality MBE grown Pb1-xSnxSe superlattices, we show that the penetration depth of the TQW interface states and therefore their Dirac mass is continuously tunable with temperature. This presents a new pathway to engineer the Dirac mass of topological systems and paves the way towards the realization of emergent quantum states of matter using Pb1-xSnxSe topological superlattices.

Topological band engineering of graphene nanoribbons.

Topological insulators are an emerging class of materials that host highly robust in-gap surface or interface states while maintaining an insulating bulk1,2. Most advances in this field have focused on topological insulators and related topological crystalline insulators3 in two dimensions4-6 and three dimensions7-10, but more recent theoretical work has predicted the existence of one-dimensional symmetry-protected topological phases in graphene nanoribbons (GNRs)11. The topological phase of these laterally confined, semiconducting strips of graphene is determined by their width, edge shape and terminating crystallographic unit cell and is characterized by a [Formula: see text] invariant12 (that is, an index of either 0 or 1, indicating two topological classes-similar to quasi-one-dimensional solitonic systems13-16). Interfaces between topologically distinct GNRs characterized by differentvalues of [Formula: see text] are predicted to support half-filled, in-gap localized electronic states that could, in principle, be used as a tool for material engineering11. Here we present the rational design and experimental realization of a topologically engineered GNR superlattice that hosts a one-dimensional array of such states, thus generating otherwise inaccessible electronic structures. This strategy also enables new end states to be engineered directly into the termini of the one-dimensional GNR superlattice. Atomically precise topological GNR superlattices were synthesized from molecular precursors on a gold surface, Au(111), under ultrahigh-vacuum conditions and characterized by low-temperature scanning tunnelling microscopy and spectroscopy. Our experimental results and first-principles calculations reveal that the frontier band structure(the bands bracketing filled and empty states) of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This manifestation of non-trivial one-dimensional topological phases presents a route to band engineering in one-dimensional materials based on precise control of their electronic topology, and is a promising platform for studies of one-dimensional quantum spin physics.

Mie-coupled bound guided states in nanowire geometric superlattices

All-optical operation holds promise as the future of computing technology, and key components include miniaturized waveguides (WGs) and couplers that control narrow bandwidths. Nanowires (NWs) offer an ideal platform for nanoscale WGs, but their utility has been limited by the lack of a comprehensive coupling scheme with band selectivity. Here, we introduce a NW geometric superlattice (GSL) that allows narrow-band guiding in Si NWs through coupling of a Mie resonance with a bound-guided state (BGS). Periodic diameter modulation creates a Mie-BGS-coupled excitation that manifests as a scattering dark state with a pronounced scattering dip in the Mie resonance. The frequency of the coupled mode, tunable from the visible to near-infrared, is determined by the pitch of the GSL. Using a combined GSL-WG system, we demonstrate spectrally selective guiding and optical switching and sensing at telecommunication wavelengths, highlighting the potential to use NW GSLs for the design of on-chip optical components.

Resolving lifetimes of degenerate polariton states in an optical superlattice

Minibands of a superlattice are degenerate in energy. In this study, we directly measured polariton lifetimes from the energy-degenerate minibands of an optical superlattice. The superlattices we used are generated by all-optical means on a one-dimensional ZnO microrod. We extracted the group velocities of polaritons by angle-resolved photoluminescence spectroscopy. We obtained the propagation distances of these polaritons by spatially resolved micro-photoluminescence imaging. With these parameters, the lifetimes of degenerate polariton states can be successfully resolved.

Rutile IrO2/TiO2 superlattices: A hyperconnected analog to the Ruddelsden-Popper structure

Emergent properties in transition metal oxide superlattices are traditionally tuned as functions of stoichiometry, reduced dimensionality, and epitaxial strain. Here the authors introduce a new tuning parameter, the connectivity of the $M$O${}_{6}$ octahedra ($M=$ transition metal), as a means to manipulate the electronic structure, symmetry, and competing ground states of oxide superlattices. They demonstrate this by the epitaxial growth of alternating layers of the high spin-orbit metal IrO${}_{2}$ and the band insulator TiO${}_{2}$, both of which have the rutile structure.

Observation of the quantum valley Hall state in ballistic graphene superlattices.

In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and nonlocal resistance near Dirac points. A ballistic version of these phenomena has never been explored. We report transport properties of ballistic graphene superlattices. This allows us to study and exploit giant nonlocal resistances with a large valley Hall angle without a magnetic field. In a low-temperature regime, a crossover occurs toward a new state of matter, referred to as a quantum valley Hall state (qVHS), which is an analog of the quantum Hall state without a magnetic field. Furthermore, a nonlocal resistance plateau, implying rigidity of the qVHS, emerges as a function of magnetic field, and this plateau collapses, which is considered a manifestation of valley/pseudospin magnetism.

High-order fractal states in graphene superlattices

Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these conditions, semiclassical electron trajectories become straight again, similar to the case of zero magnetic field. Here, we report magnetotransport measurements that reveal second-, third-, and fourth-order magnetic Bloch states at high electron densities and temperatures above 100 K. The recurrence of these states creates a fractal pattern intimately related to the origin of Hofstadter butterflies. The hierarchy of the fractal states is determined by the width of magnetic minibands, in qualitative agreement with our band-structure calculations.

Optical and structural study of deformation states in the GaN/AlN superlattices

We report on the effect of strain on the optical and structural properties of 5-, 10-, and 20-period GaN/AlN superlattices (SLs) deposited by plasma-assisted molecular beam epitaxy. The deformation state in SLs has been studied by high resolution transmission electron microscopy (HRTEM), X-ray diffraction, and micro-Raman, Fourier transform infrared (FTIR), and photoluminescence spectroscopy. HRTEM images showed that the structural quality of the SL layers is significantly improved and the interfaces become very sharp on the atomic level with an increase of the SL periods. A combined analysis through XRD, Raman, and FTIR reflectance spectroscopy found that with increasing number of SL periods, the strain in the GaN quantum wells (QWs) increases and the AlN barrier is relaxed. Based on the dependence of the frequency shift of the E2High and E1TO Raman and IR modes on the deformation in the layers, the values of the biaxial stress coefficients as well as the phonon deformation potentials of these modes in both GaN and AlN were determined. With increasing number of SL periods, the QW emission considerably redshifted in the range lower than the GaN band gap due to the quantum confined Stark effect. The influence of strain obtained by the XRD, Raman, and FTIR spectra on the structural parameters and QW emission of GaN/AlN SLs with different numbers of periods is discussed.

Thermodynamic mechanism of the intermixing of multilayered structures in the SiOx/SiO2 superlattices with nanometer thick layers

In this paper, a thermodynamic model of the behavior of superlattices consisting of alternating Si-rich oxide (SiOx) and SiO2 layers, during high temperature annealing, is presented. It is demonstrated that complete layer intermixing and breakdown of superlattice structure are expected in such superlattices at specific relations between the thicknesses of neighboring layers and for definite SiOx stoichiometries. The mechanism of this process is related to the decrease of the Gibbs free energy of intermixed superlattice state as compared to initial one if the higher kinetic efficiency condition of layer intermixing over SiOx phase separation is satisfied. The intermixing behavior of the Si oxide based superlattices is studied as a function of the initial characteristics of superlattice and the annealing temperature. The criteria for the complete layer intermixing are established. The correspondence between theoretical predictions and experimental data is discussed in terms of the borderline character of the SiOx and SiO2 layer interaction during annealing.

Graphene superlattices in strong circularly polarized fields: Chirality, Berry phase, and attosecond dynamics

We propose and theoretically explore states of graphene superlattices with relaxed $\mathcal{P}$ and $\mathcal{T}$ symmetries created by strong circularly polarized ultrashort pulses. The conduction-band electron distribution in the reciprocal space forms an interferogram with discontinuities related to topological (Berry) fluxes at the Dirac points. This can be studied using time- and angle-resolved photoemission spectroscopy (TR-ARPES). Our findings hold promise for control and observation of ultrafast electron dynamics in topological solids and may be applied to petahertz-scale information processing.

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices.

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillation that does not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few tesla. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work hints at unexplored physics in Hofstadter butterfly systems at high temperatures.

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.