SnS2 Research Articles

Defect-Engineered Tin Disulfide Nanocarriers as "Precision-Guided Projectile" for Intensive Synergistic Therapy.

Nanoformulations with endogenous/exogenous stimulus-responsive characteristics show great potential in tumor cell elimination with minimal adverse effects and high precision. Herein, an intelligent nanotheranostic platform (denoted as TPZ@Cu-SnS2-x /PLL) for tumor microenvironment (TME) and near-infrared light (NIR) activated tumor-specific therapy is constructed. Copper (Cu) doping and the resulting sulfur vacancies can not only improve the response range of visible light but also improve the separation efficiency of photogenerated carriers and increase the carrier density, resulting in the ideal photothermal and photodynamic performance. Density functional theory calculations revealed that the introduction of Cu and resulting sulfur vacancies can induce electron redistribution, achieving favorable photogenerated electrons. After entering cells through endocytosis, the TPZ@Cu-SnS2-x /PLL nanocomposites show the pH responsivity property for the release of the TPZ selectively within the acidic TME, and the released Cu2+ can first interact with local glutathione (GSH) to deplete GSH with the production of Cu+ . Subsequently, the Cu+ -mediated Fenton-like reaction can decompose localhydrogen peroxide into hydroxyl radicals, which can also be promoted by hyperthermia derived from the photothermal effect for tumor cell apoptosis. The integration of photoacoustic/computed tomography imaging-guided NIR phototherapy, TPZ-induced chemotherapy, and GSH-elimination/hyperthermia enhanced chemodynamic therapy results in synergistic therapeutic outcomes without obvious systemic toxicity in vivo.

Luminescent Properties of the Jahn‒Teller Center in Carbon-Doped Tin Disulfide

Luminescent Properties of the Jahn‒Teller Center in Carbon-Doped Tin Disulfide

Atomic layer deposition of SnS2 film on a precursor pre-treated substrate

Two-dimensional (2D) materials are attracting attention because of their outstanding physical, chemical, and electrical properties for applications of various future devices such as back-end-of-line field effect transistor (BEOL FET). Among many 2D materials, tin disulfide (SnS2) material is advantageous for low temperature process due to low melting point that can be used for flexible devices and back-end-of-line (BEOL) devices that require low processing temperature. However, low temperature synthesis method has a poor crystallinity for applying to various semiconductor industries. Hence, many studies of improving crystallinity of tin disulfide film are studied for enhancing the quality of film. In this work, we propose a precursor multi-dosing method before deposition of SnS2. This precursor pre-treatment was conducted by atomic layer deposition cycles for more adsorption of precursors to the substrate before deposition. The film quality was analyzed by x-ray diffraction, Raman, transmission electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. As a result, more adsorbates by precursor pre-treatment induce higher growth rate and better crystallinity of film.

Pressure-induced metallization and enhanced photoelectric activity in layered tin disulfide

Two-dimensional layered metal dichalcogenides have given rise to considerable interest in electronics and optoelectronics fields because of their excellent physical and chemical properties and promising applications. Tin disulfide (SnS2) is an important member of them due to its environment-friendly and resource-rich characteristics. Here, a series of in situ electrical transport experiments and photocurrent measurements under high pressure have been performed to investigate the electrical and opto-electrical properties of 4H-SnS2. With increasing pressure, the electrical resistivity of 4H-SnS2 decrease significantly, leading to a transition from semiconducting to metallic state above 58.6 GPa. The increase in pressure results in a substantial enhancement in photoelectric activity, indicating the extensive potential of utilizing pressure as a trigger for in situ optoelectronic applications. Combined with our previous results of x-ray diffraction and optical absorption at high pressure, pressure-induced structural distortion, bandgap narrowing, metallization, and enhancement of photoelectric activity of 4H-SnS2 are tunable and reversible, which are of great significance for both fundamental research and device design.

Tin disulfide nanoflowers and nitrogen doped graphene oxide based extended gate field effect transistor as immunosensors

Miniaturized biosensor design is widely preferred for its application in integrated platform to provide rapid and sensitive diagnosis. However, there are only few reports which employ extended gate field effect transistors (EG-FET) for immunosensing application. Herein, we designed EG-FET using four level lithography techniques. Further, the gate layer (Au/Ti) of device has been modified with Tin disulfide nanoflowers (SnS2) and nitrogen doped graphene oxide (N-GO) hybrid composite for enhanced electrical sensing. The as-prepared SnS2 and N-GO based nanocomposite (SnS2/N-GO) was characterized by various techniques. The designed SnS2/N-GO based EG-FET was employed as an immunosensor to detect HIgG using anti-HIgG antibody. Under optimum conditions, our miniaturized immunosensor demonstrated the detection of HIgG as low as 4.81 ng/mL. The proposed immunosensor exhibited excellent sensitivity, selectivity and reproducibility towards HIgG detection, thereby suitable for a reliable integrated biosensing platform which can detect protein concentration in real samples for clinical diagnostics.

Correction: Characterization of Tin Disulfide Thin Films Prepared by Spin Coating Technique: Effect of Spin Speed and Deposition Time on Film Properties

Correction: Characterization of Tin Disulfide Thin Films Prepared by Spin Coating Technique: Effect of Spin Speed and Deposition Time on Film Properties

A novel “on-off-on” electrochemiluminescence strategy based on RNA cleavage propelled signal amplification and resonance energy transfer for Pb2+ detection

BackgroundLead (Pb) is one of the most toxic heavy-metal pollutants. Additionally, lead ions (Pb2+) can accumulate in the human body through the food chain, causing irreversible damage through organ damage and system disorders. In the past few years, the detection of Pb2+ has mainly relied on instrumental methods such as atomic absorption spectroscopy (AAS) and inductively coupled plasma mass spectrometry (ICP-MS). Nonetheless, these techniques are complicated in terms of equipment and procedures, along with being time-intensive and expensive in terms of detection. These drawbacks have limited their wide application. Hence, there is a pressing need to develop detection techniques for Pb2+ that are not only cost-efficient but also highly sensitive and specific. ResultsA novel “on-off-on” electrochemiluminescence (ECL) sensor for detecting Pb2+ was developed based on the resonance energy transfer (RET) effect between AuNPs and boron nitride quantum dots (BN QDs) and the recognition of Pb2+ by DNAzyme along with the cleavage reaction of the substrate chain. Poly(6-carboxyindole)/stannic sulfide (P6ICA/SnS2) nanocomposite was employed as a co-reaction accelerator to consequently facilitate the production of intermediate SO4•−. This effective enhancement of the reaction led to an improved ECL intensity of BN QDs and enabled the sensor platform to exhibit a higher original ECL response. Benefiting from the combination of the DNAzyme signal amplification strategy with the “on-off-on” design, the ECL sensor showed satisfactory selectivity, good stability, and high sensitivity. This ECL sensor exhibited a linear detection range (LDR) of 10−12-10−5 M and a limit of detection (LOD) of 2.6 × 10−13 M. SignificanceIn the present work, an “on-off-on” ECL sensor is constructed based on RET effect for ultrasensitive detection of Pb2+. P6ICA/SnS2 was investigated as the co-reaction accelerator in this sensor. Moreover, this ECL sensor exhibited excellent analytical capability for detecting Pb2+ in actual water samples, providing a method for detecting other heavy metal ions as well.

Strand displacement amplification triggered 3D DNA roller assisted CRISPR/Cas12a electrochemiluminescence cascaded signal amplification for sensitive detection of Ec-16S rDNA

BackgroundEscherichia coli can cause gastrointestinal infection, urinary tract infection and other infectious diseases. Accurate detection of Escherichia coli 16S rDNA (Ec-16S rDNA) in clinical practice is of great significance for the identification and treatment of related diseases. At present, there are various types of sensors that can achieve accurate detection of Ec-16S rDNA. Electrochemiluminescence (ECL) has attracted considerable attention from researchers, which causes excellent performance in bioanalysis. Based on the previous research, it is significance to develop a novel, sensitive and efficient ECL biosensor. ResultsIn this work, an ECL biosensor for the detection of Ec-16S rDNA was constructed by integrating CRISPR/Cas12a technology with the cascade signal amplification strategy consisting of strand displacement amplification (SDA) and dual-particle three-dimensional (3D) DNA rollers. The amplification products of SDA triggered the operation of the DNA rollers, and the products generated by the DNA rollers activated CRISPR/Cas12a to cleave the signal probe, thereby realizing the change of the ECL signal. The cascade amplification strategy realized the exponential amplification of the target signal and greatly improved the sensitivity. Manganese dioxide nanoflowers (MnO2 NFs) as a co-reaction promoter effectively enhanced the ECL intensity of tin disulfide quantum dots (SnS2 QDs). A new ternary ECL system (SnS2 QDs/S2O82−/MnO2 NFs) was prepared, which made the change of ECL intensity of biosensor more significant. The proposed biosensor had a response range of 100 aM-10 nM and a detection limit of 27.29 aM (S/N = 3). Significance and noveltyHerein, the cascade signal amplification strategy formed by SDA and dual-particle 3D DNA rollers enabled the ECL biosensor to have high sensitivity and low detection limit. At the same time, the cascade signal amplification strategy was integrated with CRISPR/Cas12a to enable the biosensor to efficiently detect the target. It can provide a new idea for the detection of Ec-16S rDNA in disease diagnosis and clinical analysis.

Near-Infrared Driven Gold Nanoparticles-Decorated g-C3N4/SnS2 Heterostructure through Photodynamic and Photothermal Therapy for Cancer Treatment.

Phototherapy based on photocatalytic semiconductor nanomaterials has received considerable attention for the cancer treatment. Nonetheless, intense efficacy for in vivo treatment is restricted by inadequate photocatalytic activity and visible light response. In this study, we designed a photocatalytic heterostructure using graphitic carbon nitride (g-C3N4) and tin disulfide (SnS2) to synthesize g-C3N4/SnS2 heterostructure through hydrothermal process. Furthermore, Au nanoparticles were decorated in situ deposition on the surface of the g-C3N4/SnS2 heterostructure to form g-C3N4/SnS2@Au nanoparticles. The g-C3N4/SnS2@Au nanoparticles generated intense reactive oxygen species radicals under near-infrared (NIR) laser irradiation through photodynamic therapy (PDT) pathways (Type-I and Type-II). These nanoparticles exhibited enhanced photothermal therapy (PTT) efficacy with high photothermal conversion efficiency (41%) whensubjected to 808 nm laser light, owing to the presence of Au nanoparticles. The in vitro studies have indicated that these nanoparticles can induce human liver carcinoma cancer cell (HepG2) apoptosis (approximately 80% cell death) through the synergistic therapeutic effects of PDT and PTT. The in vivo results demonstrated that these nanoparticles exhibited enhanced efficient antitumor effects based on the combined effects of PDT and PTT. The g-C3N4/SnS2@Au nanoparticles possessed enhanced photothermal properties and PDT effect, good biocompatibility and intense antitumor efficacy. Therefore, these nanoparticles could be considered promising candidates through synergistic PDT/PTT effects upon irradiation with NIR laser for cancer treatment.

High-performance electromagnetic wave absorption in FeS2/SnS2@multi-walled carbon nanotube composites with honeycomb-shaped structure.

In this work, we synthesized composites of ferrous disulfide and tin disulfide with multi-walled carbon nanotubes (MWCNTs) using a straightforward hydrothermal method. The incorporation of carbon nanotubes significantly enhanced the dielectric loss capability of the composites. When the filling ratio of FeS2/SnS2@CNTs (20 wt%) in paraffin was 40%, the effective absorption bandwidth was 3.28 GHz, while the minimum reflection loss (RL) value was as high as -39.2 dB, which corresponded to a thickness of only 1.4 mm. This work reveals the potential research value of this material in terms of thin thickness, strong absorption and light mass.

Recent advances in SnS2-based nanomaterials as high-performance anodes for sodium ion batteries

Tin disulfide (SnS2) is a promising anode material owing to its high theoretical capacity and large interlayer spacing. In this paper, the basic properties and storage mechanism are reviewed, with emphasis on the structure design of SnS2.

Nucleation preference and lateral growth of monolayer tin disulfide on graphene

Herein we investigate the nucleation and growth of SnS2 on graphene, and further achieve a large-area SnS2/graphene hetero-bilayer.

High-performance flexible resistive random-access memory based on SnS2 quantum dots with a charge trapping/de-trapping effect.

The application of resistive random-access memory (RRAM) in storage and neuromorphic computing has attracted widespread attention. Benefitting from the quantum effect, transition metal dichalcogenides (TMD) quantum dots (QDs) exhibit distinctive optical and electronic properties, which make them promising candidates for emerging RRAM. Here, we show a high-performance forming-free flexible RRAM based on high-quality tin disulfide (SnS2) QDs prepared by a facile liquid phase method. The RRAM device demonstrates high flexibility with a large on/off ratio of ∼106 and a long retention time of over 3 × 104 s. The excellent switching behavior of the memristor is elucidated by a charge trapping/de-trapping mechanism where the SnS2 QDs act as charge trapping centers. This study is of significance for the understanding and development of TMD QD-based flexible memristors.

Scanning Tunneling Spectroscopy Method for the Prediction of Semiconductor Heterojunction Performance as a Prequel for Device Development.

The prediction of semiconductor device performance is a persistent challenge in materials science, and the ability to anticipate useful specifications prior to construction is crucial for enhancing the overall efficiency. In this study, we investigate the constituents of a solar cell by employing scanning tunneling microscopy (STM) and spectroscopy (STS). Through our observations, we identify a spatial distribution of the dopant type in thin films of materials that were designed to present major p-doping for germanium sulfide (GeS) and dominant n-doping for tin disulfide (SnS2). By generating separate STS maps for each semiconductor film and conducting a statistical analysis of the gap and doping distribution, we determine intrinsic limitations for the solar cell efficiency that must be understood prior to processing. Subsequently, we fabricate a solar cell utilizing these materials (GeS and SnS2) via vapor phase deposition and carry out a characterization using standard J-V curves under both dark/illuminated irradiance conditions. Our devices corroborate the expected reduced efficiency due to doping fluctuation but exhibit stable photocurrent responses. As originally planned, quantum efficiency measurements reveal that the peak efficiency of our solar cell coincides with the range where the standard silicon solar cells sharply decline. Our STS method is suggested as a prequel to device development in novel material junctions or deposition processes where fluctuations of doping levels are retrieved due to intrinsic material characteristics such as the occurrence of defects, roughness, local chemical segregation, and faceting or step bunching.

Crystalline Tin Disulfide by Low-Temperature Plasma-Enhanced Atomic Layer Deposition as an Electrode Material for Li-Ion Batteries and CO2 Electroreduction

Crystalline Tin Disulfide by Low-Temperature Plasma-Enhanced Atomic Layer Deposition as an Electrode Material for Li-Ion Batteries and CO₂ Electroreduction

Enhancing the electrochemical and photovoltaic performance of hexagonal tin disulfide nanoflakes for dye-sensitized solar cells counter electrode by Tantalum dopant

The ongoing effort to stabilize and enhance dye-sensitized solar cells (DSSCs) efficiency has prompted the solar society to adopt innovative strategies. The counter electrode (CE) plays a crucial role, with platinum (Pt) being effective but expensive. Transition metal dichalcogenides (TMDs) like Tin sulphide (SnS2) show promise as alternatives to Pt. In this work, Tantalum (Ta)-doped SnS2 hexagonal nanoflakes have been synthesized by the hydrothermal method. Characterization using X-ray diffraction (XRD), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM), and X-ray photoelectron spectroscopy (XPS) revealed the impact of dopants on these nanoflakes. XRD, Raman, and HRTEM confirmed the hexagonal structure of nanoflakes. Electrochemical impedance spectroscopy (EIS) indicated a reduced charge transfer resistance (Rct) value of 1.51 Ω. Cyclic voltammetry (CV) analyses confirmed the improved electrocatalytic activity and superior redox reaction. Therefore, Ta dopant SnS2-based CE offers cost-effective and enhanced power conversion efficiency (PCE) in DSSC.

Flexible Ti3 C2 Tx MXene Bonded Bio-Derived Carbon Fibers Support Tin Disulfide for Fast and Stable Sodium Storage.

High energy density and flexible electrodes, which have high mechanical properties and electrochemical stability, are critical to the development of wearable electronics. In this work, a free-standing MXene bonded SnS2 composited nitrogen-doped carbon fibers (MXene/SnS2 @NCFs)film is reported as a flexible anode for sodium-ion batteries. SnS2 nanoparticles with high-capacity properties are covalently decorated in bio-derived nitrogen-doped 1D carbon fibers (SnS2 @NCFs) and further assembled with highly conductive MXene sheets. The addition of bacterial cellulose (BC) can further improve the flexibility of the film. The unique 3D structure of points, lines, and planes can not only offset the disadvantage of low conductivity of SnS2 nanoparticles but also expand the distance between MXene sheets, which is conducive to the penetration of electrolytes. More importantly, the MXene sheets and N-doped 1D carbon fibers (NCFs) can accommodate the large volume expansion of SnS2 nanoparticles and trap polysulfide during the cycle. The MXene/SnS2 @NCFs film exhibits better sodium storage and excellent rate performance compared to the SnS2 @NCFs. The in situ XRD and ex situ (XRD, XPS, and HRTEM) techniques are used to analyze the sodiation process and to deeply study the reaction mechanism of the films. Finally, the quasi-solid-state full cells with MXene/SnS2 @NCFs and Na3 V2 (PO4 )3 @carbon cloth (NVP@CC) fully demonstrate the application potential of the flexible electrodes.

Recent advances of emerging tin disulfide for room temperature gas sensing

Recent advances of emerging tin disulfide for room temperature gas sensing

An Ultrahigh-Capacity Dual-Ion Battery Based on a Free-Standing Graphite Paper Cathode and Flower-Like Heterojunction Anode of Tin Disulfide and Molybdenum Disulfide.

Dual-ion batteries have been considered as a competitive energy-storage device. However, owing to the lack of suitable high-capacity density and rapid-charging electrode materials, designing a cost-effective and high-performance dual-ion battery is still a great challenge. Herein, an ultrahigh-capacity dual-ion battery is constructed based on a carbon-nanotubes (CNTs) containing SnS2 -MoS2 @CNTs heterojunction anode and highly crystalline free-standing graphite paper serves as cathode. The SnS2 -MoS2 @CNTs heterojunction consisting of ultrathin nanosheets was prepared via a facile two-step hydrothermal method and shows flower-like morphology and high crystallinity. Benefiting from the unique design concept, the graphite paper/SnS2 -MoS2 @CNTs dual-ion battery delivers a high capacity of 274.2 mAh g-1 at 100 mA g-1 and has an outstanding capacity retention of 95 % after 300 cycles under 400 mA g-1 . Even at a high current density of 2 A g-1 the battery still retains a considerable capacity of 112.3 mAh g-1 . More importantly, the battery shows an extremely low self-discharge of 0.006 % h-1 after resting for 24 h. Characterization using SEM and XRD further demonstrate the excellent cycling stability and good reversibility. Consequently, this constructed dual-ion battery could be a promising energy storage device and provide new insights for the design of high-performance dual-ion batteries.

A Novel Biosensing Approach: Improving SnS2 FET Sensitivity with a Tailored Supporter Molecule and Custom Substrate.

The exclusive features of two-dimensional (2D) semiconductors, such as high surface-to-volume ratios, tunable electronic properties, and biocompatibility, provide promising opportunities for developing highly sensitive biosensors. However, developing practical biosensors that can promptly detect low concentrations of target analytes remains a challenging task. Here, a field-effect-transistor comprising n-type transition metal dichalcogenide tin disulfide (SnS2 ) is developed over the hexagonal boron nitride (h-BN) for the detection of streptavidin protein (Strep.) as a target analyte. A self-designed receptor based on the pyrene-lysine conjugated with biotin (PLCB) is utilized to maintain the sensitivity of the SnS2 /h-BN FET because of the π-π stacking. The detection capabilities of SnS2 /h-BN FET are investigated using both Raman spectroscopy and electrical characterizations. The real-time electrical measurements exhibit that the SnS2 /h-BN FET is capable of detecting streptavidin at a remarkably low concentration of 0.5 pm, within 13.2s. Additionally, the selectivity of the device is investigated by measuring its response against a Cow-like serum egg white protein (BSA), having a comparative molecular weight to that of the streptavidin. These results indicate a high sensitivity and rapid response of SnS2 /h-BN biosensor against the selective proteins, which can have significant implications in several fields including point-of-care diagnostics, drug discovery, and environmental monitoring.