Pyramidal tips made from boron doped diamond have become the ultimate choice for electrically measuring semiconductor device structures in electrical atomic force microscopy (AFM). An advanced measurement setup with diamond probing units directly integrated inside a scanning electron microscopy (SEM) system is highly wanted as this allows for accurate tip positioning compared to the optical microscope of a standard AFM and enables also multiple tip measurements. Therefore, we have developed highly conductive in-plane diamond tips with a triangular shape and attached them to Ni cantilevers. We have established a LabVIEW-based setup enabling automated electrical measurements inside a SEM system using stick-and-slip motion nanomanipulators and a parameter analyzer system. To our best knowledge, this paper presents first 1- and 2-tip electrical measurements of microfabricated diamond probes inside a SEM system. Measurements of Si staircase and Ge structures are shown and compared to scanning spreading resistance (SSRM) results. Our work demonstrates that doped diamond tips clearly outperform common tungsten probe needles enabling nanoprobing experiments which were impossible so far. Based on our results, we predict that doped diamond is going to be the standard tip material not only for electrical AFM but also for nanoprobing of semiconductor materials.