We fabricated 1.55-µm band, broad-area, p-doped, 30-layer stacked quantum-dot (QD) laser diodes (LDs) grown on an InP(311)B substrate via a delta-doping method employing a strain compensation technique. We doped Be atoms to a depth of 5 nm from the bottom of each QD layer. The concentration of Be atoms doped in the InGaAlAs spacer layer was 1 × 1018 cm−3. We observed a strong photoluminescence emission and a relatively coherent surface of QDs using atomic force microscopy. In addition, we observed that the fabricated QD-LDs had extremely stable temperature characteristics, and a characteristic temperature T0 of more than 2156 K was obtained.