Stacked Precursors Research Articles

Impact of stacking sequence and sulfurization duration on the growth of pyrargyrite Ag3SbS3 absorber layers

Pyrargyrite Ag3SbS3 is a promising absorber for thin-film solar cells. In this study, the impact of precursor stacking sequence and sulfurization duration on the growth and properties of Ag3SbS3 films was investigated. Initially, the Ag3SbS3 films produced by depositing Sb/Ag and Ag/Sb/Ag metal stacks and then sulfurizing at 300 °C crystallized in rhombohedral structure with (113) preferred orientation. The film produced from the Sb/Ag stack had a uniform and large-grained morphology up to a thickness of 1150 nm, and a direct bandgap of 1.65 eV; whereas the film prepared with the Ag/Sb/Ag stack exhibited nonuniform grain morphology with decreased film thickness, and increased bandgap energy (1.70 eV). Secondly, the Ag3SbS3 films produced from the Sb/Ag stack by increasing sulfurization duration from 10 to 90 min increases the crystallite size from 26 to 27 nm, enhances the grain compactness and uniformity, varies the bandgap in the range of 1.65–1.69 eV, and electrical resistivity. The solar cells fabricated using the films produced by sulfurizing the Sb/Ag stack for 30 min duration exhibited a maximum power conversion efficiency of 0.52% with an VOC of 471.6 mV, JSC of 2.0 mA/cm2, and FF of 55.0%. This study offers a pathway for the advancement of Ag3SbS3 thin-film solar cells.

Influence of Stacking Order on the Structural and Optical Properties of Cu2ZnSnS4 Absorber Layer Prepared from DC-Sputtered Oxygenated Precursors

Several studies have attempted to overcome the sudden volume expansion of the precursor during sulfurization by the use of oxygen-containing precursors when growing the CZTS absorber. This work demonstrates the influence of precursor stacking orders on the properties of the CZTS thin film absorber layer from DC-sputtered oxygenated precursors for solar cell applications. CZTS absorber layers were prepared from three types of DC-sputtered stacks, namely, Zn-O/Sn/Cu, Sn/Zn-O/Cu, and Sn/Cu/Zn-O. The precursors were sequentially deposited on a soda lime glass (SLG) using DC-magnetron sputtering and annealed in a sulfur and nitrogen ambient. X-ray diffractometry (XRD) and Raman spectroscopy analyses reveal the formation of crystalline kesterite CZTS structure regardless of the precursor stacking order. Atomic force microscope (AFM) analysis showed that CZTS thin films grown from precursor stacks SLG/Zn-O/Sn/Cu and SLG/Sn/Zn-O/Cu had improved morphological properties with densely packed large grains compared to that with stack SLG/Sn/Cu/Zn-O. SLG/Zn-O/Sn/Cu is the best stack among the studied stacking orders since it exhibits large grains in the absorber layer, which is preferential for high-efficiency thin film solar cells. The use of oxygenated precursor with order Sn/Zn-O/Cu promises improved CZTS absorber properties as it exhibits better morphological properties.

Facile Approach for Metallic Precursor Engineering for Efficient Kesterite Thin-Film Solar Cells.

Kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are a promising candidate for low-cost, clean energy production owing to their environmental friendliness and the earth-abundant nature of their constituents. However, the advancement of kesterite TFSCs has been impeded by abundant defects and poor microstructure, limiting their performance potential. In this study, we present efficient Ag-alloyed CZTSSe TFSCs enabled by a facile metallic precursor engineering approach. The positioning of the Ag nanolayer in the metallic stacked precursor proves crucial in expediting the formation of Cu-Sn metal alloys during the alloying process. Specifically, Ag-included metallic precursors promote the growth of larger grains and a denser microstructure in CZTSSe thin films compared to those without Ag. Moreover, the improved uniformity of Ag, facilitated by the evaporation deposition technique, significantly suppresses the formation of detrimental defects and related defect clusters. This suppression effectively reduces nonradiative recombination, resulting in enhanced performance in kesterite TFSCs. This study not only introduces a metallic precursor engineering strategy for efficient kesterite-based TFSCs but also accelerates the development of microstructure evolution from metallic stacked precursors to metal chalcogenide compounds.

Microstrain effect of single crystalline LiNi0.7Co0.1Mn0.2O2 cathode material on Ni0.7Co0.1Mn0.2(OH)2 precursor stacking

LiNixCoyMn1-x-yO2(NCM) has been regarded as promising cathode materials for high energy density lithium ion battery. Apart from the capacity deterioration during cycling process, NCM particle microcracks’ generation resulting from anisotropic strain in crystal lattice is also regarded as the crucial issue from mechanical scale. As the original materials of synthesizing NCM, NCMOH precursor decides much of the prepared NCM materials in both electrochemical and mechanical scale while mechanical degrading mechanism inside crystal lattice is missing in related literature. In this study, the LiNi0.7Co0.1Mn0.2O2 single crystalline particles are calcined from NCMOH precursors with difference in mechanical stacking morphology and physical property (specific surface area and tapping density) through the same appropriate sintering condition. The evolution of lattice microstrain calculation and elastic modulus for NCM materials through structure and mechanical evaluation has been studied. It is indicated that larger size and higher rate capability (fast charging) of single crystalline LNCMO materials can be obtained from precursor with smaller specific surface area and higher tapping density while the larger microstrain and less elastic modulus degradation are determined during electrochemical charging process. Stronger structure maintaining ability of NCM lattice under large electric field force (during fast charging process) is beneficial to the capacity performance related with higher-rate capability. This might provide a novel insight of understanding the mechanical effect of NCMOH precursors on the synthesis and electrochemical performance of Ni-rich LiNixCoyMn1-x-y materials.

Fabrication of Two-Layer Aluminum Foam Consisting of Dissimilar Aluminum Alloys Using Optical Heating.

Aluminum foam is a lightweight material and has excellent shock-absorbing properties. Various properties of aluminum foam can be obtained by changing the base aluminum alloy. Multi-layer aluminum foam can be fabricated by varying the alloy type of the base aluminum alloy, but with different foaming temperatures, within a single aluminum foam to achieve multiple properties. In this study, we attempted to fabricate a two-layer aluminum foam with the upper layer of a commercially pure aluminum A1050 foam and the lower layer of an Al-Si-Cu aluminum alloy ADC12 foam by using an optical heating device that can heat from both the upper and lower sides. Two types of heating methods were investigated. One is to directly stack the A1050 precursor coated with black toner on top of the ADC12 precursor and to foam it from the top and bottom by optical heating. The other is to place a wire mesh between the ADC12 precursor and the A1050 precursor and place the A1050 precursor on the wire mesh, thereby creating a space between the precursors, which is then foamed by optical heating from the top and bottom. It was shown that both precursors can be foamed and joined, and a two-layer A1050/ADC12 foam can be fabricated for both types of heating methods. In the method in which two precursors were stacked and foamed, even if the light intensity of the halogen lamps on the top and bottom were adjusted, heat conduction occurred between the stacked precursors, and the foaming of each precursor could not be controlled, resulting in tilting of the joining interface. In the method of foaming using a wire mesh with a gap between two precursors, it was found that by adjusting the light intensity, the two precursors can be foamed almost simultaneously and achieve similar pore structures. The joining interface can also be maintained horizontally.

Improved CZTSe solar cell efficiency via silver and germanium alloying

In this study, we report systematic investigation of the effects of Ag and Ge alloying on properties of CZTSe layers, as well as, on the performance of solar cells fabricated using these films. In this context, Ag-Ge doped CZTSe layers were produced by selenization of Cu/Sn/Zn/Cu/(Ag,Ge)/Se precursor stack structures using rapid thermal processing. All precursor stacks and the Ag-Ge doped CZTSe films obtained after selenization exhibited (Cu + Ag)-poor and Zn-rich chemical composition. XRD studies demonstrated pure kesterite phase for all reacted films. Raman spectra confirmed this finding. Cross-sectional SEMs showed large grain structure, which resulted from Ag-Se and Ge-Se liquid phase formation that assisted crystal growth during high temperature annealing. While a slight Ag-front-gradient was achieved in Ag-doped CZTSe film, the Ag gradient disappeared with incorporation of Ge into the lattice. Addition of Ge formed a gradient within the material such that near-contact region was more Ge-rich. Solar cells fabricated using films with various compositions demonstrated that double doping CZTSe with both Ag and Ge improved the device efficiency from about 5 % to over 8 %.

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films.

Ag8SnS6 (ATS) has been reported to have a band gap of 1.33 eV and is expected to be a suitable material for the light-absorbing layers of compound thin-film solar cells. However, studies on solar cells that use ATS are currently lacking. The objective of this study is to obtain high-quality ATS thin films for the realization of compound thin-film solar cells using vacuum deposition and sulfide annealing. First, glass/SnS/Ag stacked precursors are prepared by vacuum deposition. Subsequently, they are converted to the ATS phase via sulfide annealing, and various process conditions, namely, annealing time, annealing temperature, and number of steps, are studied. By setting the heat treatment temperature at 550 °C and the heat treatment time at 60 min, a high-quality ATS thin film could be obtained. Multi-step heat treatment also produces thin films with nearly no segregation or voids.

Influence of silver introduction into (Ag,Cu)(In,Ga)S2 thin films on their physical properties

Silver was introduced into pure-sulfide Cu(In,Ga)S2 (CIGS) to form (Ag,Cu)(In,Ga)S2 (ACIGS) compound. The impact of the Ag addition on physical properties and photovoltaic performances was therefore examined to determine suitable Ag amount in ACIGS solar cells. The ACIGS thin films with different Ag/(Ag + Cu) (AAC) compositional ratios were formed through the sulfurization of the In/Cu/Ga/Ag stacked precursors. It is disclosed that the AAC is obviously increased from 0 to 0.18 under the increase in the Ag precursor thickness from 0 to 80 nm. Moreover, under the suitable Ag introduction (ACC of 0.04), the quality of ACIGS absorbers is improved with low Urbach energy (EU) and the enlargement of crystal grain size. The decreased conduction band offset between the absorber and CdS buffer layers under Ag addition is realized with lower valence band maximum value of the ACIGS absorbers, thus feasibly increasing the hole barrier. Additionally, the band alignment between absorber and CdS buffer layers was disclosed with the varied ACC based on photoemission yield spectroscopy. Ultimately, the short-circuit current density of the ACIGS solar cell is clearly increased by 2 mA/cm2 under suitable ACC of 0.04.

INFLUENCE OF HEATING RATE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SILVER AND GERMANIUM CO-DOPED CZTS THIN FILM

The effect of heating rate on the structural and optical properties of Ag+Ge co-doped CZTS thin film were investigated and compared with the undoped CZTS sample. The undoped and Ag+Ge co-doped CZTS samples obtained by two-stage technique consisting of the sequential deposition of the precursor stacks by sputtering systemand sulfurization of these layers at elevated temperature in the RTP system by employing heating rate of 1°C/s, 2°C/s and 3°C/s. Ag and Ge co-doped precursor stack as well as undoped stack demonstrated Cu-poor, Zn-rich composition. In addition, the dopant ratio of the Ag+Ge co-doped stack was close to the targeted content considering to EDS measurement. Regardless of the employed heating rate or the doping process, all of the samples crystallized in a kesterite structure. However, it was confirmed by XRD measurements that high heating rates caused phase separation in kesterite phase formation. On the other hand, The Raman peaks assigned to Cu-vacancy and CuZn antisite defects formation inhibited with incorporating Ag and Ge into the CZTS structure. Ag and Ge co-doped CZTS sample produced with a heating ramp rate of 1°C/s showed better structural and optical results among them.

Investigation on photovoltaic performance of Cu2SnS3 thin film solar cells fabricated by RF-sputtered In2S3 buffer layer

A two-step process was used to prepare Cu2SnS3 films in this study: first, precursor stacks were deposited using a magnetron sputtering technique, and then the stacks were annealed in sulfur-containing atmosphere at various times. Utilizing a variety of characterization techniques, it was thoroughly examined how sulfurization time affected the films’ structural, morphological, optical, and electrical characteristics. X-ray diffraction and Raman spectroscopy measurements indicated that two structural polymorphs (tetragonal and monoclinic) of Cu2SnS3 co-existed in the films. Surface and cross-sectional images obtained by scanning electron microscopy showed that the microstructures of the films were entirely changed to well-grown crystal structures at 30 min and 40 min sulfurization times. In2S3/Cu2SnS3 stacks were prepared by the deposition of In2S3 films on the absorber layers sulfurized for 30 and 40 min by RF magnetron sputtering method. The fabrication of Ni/Al/Ni/AZO/i:ZnO/In2S3/Cu2SnS3/Mo/SLG-structured devices was done using both thermally annealed and non-annealed In2S3/Cu2SnS3 stacks. Secondary ion mass spectroscopy studies of the devices revealed that the indium diffused from In2S3 layer into the Cu2SnS3 absorber to a certain depth. The efficiency values of the devices were found to have been slightly enhanced with the annealing of the In2S3/Cu2SnS3 stacks. The solar cell with the maximum efficiency (η) of 3.12 %, open-circuit voltage (VOC) of 0.265 mV, short-circuit current (JSC) of 37.90 mA/cm2, and fill factor (FF) of 0.31 was produced by thermally annealed In2S3/Cu2SnS3 stack with an absorber layer sulfurized for 40 min.

Synthesis and Post-Processing of Chemically Homogeneous Nanothreads from 2,5-Furandicarboxylic Acid.

Compared with conventional, solution-phase approaches, solid-state reaction methods can provide unique access to novel synthetic targets. Nanothreads-one-dimensional diamondoid polymers formed through the compression of small molecules-represent a new class of materials produced via solid-state reactions, however, the formation of chemically homogeneous products with targeted functionalization represents a persistent challenge. Through careful consideration of molecular precursor stacking geometry and functionalization, we report here the scalable synthesis of chemically homogeneous, functionalized nanothreads through the solid-state polymerization of 2,5-furandicarboxylic acid. The resulting product possesses high-density, pendant carboxyl functionalization along both sides of the backbone, enabling new opportunities for the post-synthetic processing and chemical modification of nanothread materials applicable to a broad range of potential applications.

Synthesis and Post‐Processing of Chemically Homogeneous Nanothreads from 2,5‐Furandicarboxylic Acid**

AbstractCompared with conventional, solution‐phase approaches, solid‐state reaction methods can provide unique access to novel synthetic targets. Nanothreads—one‐dimensional diamondoid polymers formed through the compression of small molecules—represent a new class of materials produced via solid‐state reactions, however, the formation of chemically homogeneous products with targeted functionalization represents a persistent challenge. Through careful consideration of molecular precursor stacking geometry and functionalization, we report here the scalable synthesis of chemically homogeneous, functionalized nanothreads through the solid‐state polymerization of 2,5‐furandicarboxylic acid. The resulting product possesses high‐density, pendant carboxyl functionalization along both sides of the backbone, enabling new opportunities for the post‐synthetic processing and chemical modification of nanothread materials applicable to a broad range of potential applications.

Photo-excited carrier transport and secondary phases of Na-engineered kesterite flexible thin films

Kesterite [Cu 2 ZnSn(S,Se) 4 (CZTSSe)], which is one of the most promising solar cell materials, can be used as a light absorber owing to its suitable optical and electrical properties. In this study, the optimization process of NaF layers was performed in the deposition of the precursor stacks of Sn/Cu/Zn/Mo to form CZTSSe thin films. The distribution of the secondary phases on the CZTSSe surfaces strongly depends on the insertion of the NaF layer. In particular, the Cu 2-x S binary phase increases with the closeness of the insertion location of the NaF layer to the front side. Moreover, the grain boundary properties can be altered by varying the deposition conditions since Na segregation and defect formation affect the surface electrical properties and carrier transport mechanism. Photo-assisted conductive-atomic force microscopy was used to measure the local variation in the surface photocurrent flow into the CZTSSe grains, and the incorporation of sodium increased the surface current formation. This study exhibits the effects of Na on the optimal growth of kesterite formation and carrier transport of the relevant photovoltaic devices. • Na incorporation was engineered by controlling the insertion location of NaF doping layer. • Formation of binary and ternary phases was affected by the location of NaF doping layer. • Distribution of Cu 2-x S binary phase increased as the insertion location of NaF close to the surface. • Generation of photocurrent was enhanced in Na doped CZTSSe.

Optimum precursor stacking sequence of Cu2ZnSnSe4 thin film solar cell in selenium atmosphere

In this study, Cu2ZnSnSe4 (CZTSe) films were prepared via evaporation and selenization. Metallic precursors were first deposited upon a fluorine-doped tin oxide (FTO) substrate via evaporation, followed by selenization in a selenium–argon atmosphere at a maximum temperature of 500 °C for a duration of 30 min. Selenization is always accompanied by interdiffusion between the metallic precursor layers. However, in conventional stacked precursor structures, various secondary phases are formed in the film owing to insufficient interdiffusion between the precursor metals. To address this problem, we constructed CZTSe films using multi-stacked metallic layer precursors (without changing the total thickness of each type of metal or using metal selenides as precursors). Consequently, the secondary phase formation was effectively suppressed, the quality of the CZTSe film was improved, and its performance as a bifacial photovoltaic device was enhanced. The optimal efficiency with front illumination was 4.23 %; bifacial illumination further increased the efficiency to 4.45 %.

Synthesis and characterization of Cu-sandwiched Sb2Se3 thin films and numerical simulation of p-Sb2Se3/n-ZnSe heterojunction solar cell

Sb2Se3 and Cu-sandwiched Sb2Se3 thin films were prepared by sequential evaporation of (Sb/Se) × 3 and [(Cu/(Sb/Se) × 3/Cu)] precursor stacks over the glass substrates in a high vacuum using electron beam (e-beam) evaporation followed by annealing in a tubular furnace at various temperatures in Ar atmosphere. The growth of Sb2Se3 and Cu-sandwiched Sb2Se3 films is studied by varying annealing temperature. The Sb2Se3 films grown without copper layers were peeled off from the glass substrates when annealed above 300 °C, whereas the Cu-sandwiched Sb2Se3 films were adherent to substrates up to 450 °C. The XRD of Cu-sandwiched Sb2Se3 films annealed at all temperatures confirms the Sb2Se3 formation with orthorhombic crystal structure. The Cu-sandwiched films annealed at ≤ 250 °C showed the preferred orientation along the (hk0) plane, whereas films annealed at ≥ 300 °C exhibited the (hk1) preferred orientation. The morphology of Cu-sandwiched Sb2Se3 films annealed at 450 °C showed compact and larger grains (∼0.8 μm) with a direct optical band gap of 1.04 eV. Hall effect measurement exhibited a p-type conductivity with a hole concentration of 3.1 × 1015 cm−3. The numerical simulation of the proposed Glass/Ni/p-Sb2Se3/n-ZnSe/ITO/Al heterojunction solar cell showed a power conversion efficiency of 21.51%.

Evolution of large-grained CuSbS2 thin films by rapid sulfurization of evaporated Cu–Sb precursor stacks for photovoltaics application

Ternary chalcostibite (CuSbS2) is a non-toxic and earth-abundant thin-film solar cell material with an optimal band gap, high optical absorption coefficient, and p-type electrical conductivity. Large-grained CuSbS2 thin films are crystallized by sulfurizing thermally evaporated Cu/Sb/Cu precursor stacks at 450 °C for a short duration of 1–10 min. The precursor stacks sulfurized at 450 °C for 1 min resulted in the formation of a Cu-deficient (to a small extent) and Sb-rich large-grained thin-films of CuSbS2 without any secondary phases. Increasing the sulfurization duration from 5 min to 10 min resulted in the formation of near-stoichiometric CuSbS2 films with columnar growth and more uniformly sized grains. The direct band gap of the films is found to be 1.42 eV. The electrical resistivity decreases from 28.6 to 16.7 Ω cm upon increasing the sulfurization duration from 1 to 10 min, respectively, and the hole mobility is in the range of 0.44–0.56 cm2 V−1 s−1. The solar cells fabricated using the CuSbS2 films sulfurized for a duration of 5 min exhibited a maximum power conversion efficiency of 2.5% with an open-circuit voltage of 568.7 mV and a short-circuit current density of 13.8 mA/cm2. This study provides a pathway for the development of high-efficiency CuSbS2 solar cells.

Understanding the Formation Process of Perovskite Layers Grown by Chemical Vapour Deposition

This work aims at extending the understanding of the formation processes of (Cs0.07FA0.93)PbI3 perovskite layers deposited by a two-step vapour method. In a first step, an inorganic CsI/PbI2 precursor stack is deposited by thermal evaporation (TE). A chemical vapour deposition (CVD) is then used to convert the precursor into the perovskite layer by reaction with a chemical vapour of formamidinium iodide (FAI). Here we show how crystallinity and morphology of the TE precursor layer are both influenced not only by the substrate surface properties but also by the thermal treatment in the initial phase of the CVD process. Furthermore, we provide insights on the evolution of perovskite film formation and show how a uniform elemental composition is achieved by the diffusion of cesium through PbI2 during the CVD conversion reaction.

Low temperature assisted phase transitions in thermally evaporated Cu2Se/Ga3Se2/In3Se2 multilayer thin film structure: Raman signatures of a pristine chalcopyrite CuInxGa1-xSe2 structure

Copper Indium Gallium Selenide (CIGS) thin film solar cell absorber layers are fabricated by the conventional co-evaporation of metal stack precursors followed by a selenization process at a high-temperature range. The article deals with an alternative approach to fabricate the CIGS layer by sequential evaporation of metal selenides followed by a low-temperature treatment (250 °C) during pre-and post-deposition processes. Our post annealing treatment on substrate heat treated film reported a first-ever pristine CuIn0.7Ga0.3Se2 thin film structure without selenization was reported at a very low temperature. A better microstructure with an enhanced grain growth, preferential (112) plane orientation, and Raman signatures of pristine chalcopyrite without a secondary Cu2-xSe phase at the surface was observed. Electron microscopy studies affirm the polycrystalline nature of film structure. Optical analyses have shown near-optimum values as of standard absorber layers. Crucial optical parameters such as refractive index, static and high-frequency dielectric constants were estimated by different relations. The values are concurrent with the semiconductor scale. These features in a low-temperature range optimistically land them as promising candidates in flexible electronics.

Two-step approach for the growth of Cu0.5Ag0.5InSe2 thin films

In this work a facile two-step process, comprising of e-beam evaporated precursor deposition of (In/Cu/Ag/Se)× 3 multi-stack over substrate followed by additional selenization treatment, has been used to grow high-quality Cu0.5Ag0.5InSe2 (CAISe) films. The post selenization was performed at distinct temperatures in the range, 300 °C - 500 °C, and the effect of selenization temperature on the growth of CAISe thin films was reported in detail. The post selenization of (In/Cu/Ag/Se)×3 precursors at temperatures < 450 °C showed multiple spurious phases of Cu2Se, In2Se3, Ag2Se, and In6Se7 alongside CAISe. For selenization temperatures ≥ 450 °C, the films are purely polycrystalline, single-phase, and exhibiting tetragonal crystal structure with preferred (112) orientation belongs to CAISe. Further, Raman phase analysis for the precursors selenized at ≥ 450 °C displays intense phonon modes at 67 cm−1(B2), 171 cm−1 (A1), and 212 cm-1 (B2/E1) corresponding to single phase tetragonal CAISe. The compositional analysis of (In/Cu/Ag/Se)× 3 precursors selenized at 475°C indicated that the films are nearly stoichiometric with an average atomic composition of Cu+Ag = 25.69, In = 24.39, and Se = 49.92 in at. %. The elemental depth profile across thickness shows that the distribution of elements is uniform. The micrograph of precursor stack selenized at 475 °C found to have compact and larger grains (~1.0 µm). The optical studies of stacked precursors selenized between 450 °C and 500 °C reveal a solo absorption edge, with an optical band gap ranging between 1.13 eV and 1.05 eV. The stacked layers selenized at 475 °C exhibits higher hole mobility of 27.0 cm2/V-s, and a moderate concentration of 1.26 × 1016 cm−3.

Impact of pre-annealing time on the growth and properties of Ag2ZnSnSe4 thin films

In this study, we demonstrate the pre-annealing treatment of stacked precursors at 250 °C for different durations (5, 10, 15, 20, 30, and 60 min), subsequently selenized at 400 °C for 1 min and correlate its effects on structural, morphological, and optoelectronic properties of Ag2ZnSnSe4 films (AZTSe) with a detailed characterization. After investigating pre-annealing treatment duration, the grown AZTSe films show various binary/ternary phases and appreciable transformation in surface morphology. However, stacked layers pre-annealed for 20 min and selenized at 400 °C for 1 min show a single-phase kesterite AZTSe with two main Raman peaks at 181 and 198 cm−1 with compact and larger grains (~0.53 μm). The bond length and bond angles for single-phase AZTSe films are evaluated using Rietveld refinement of X-ray diffraction data. The core-level X-ray photoelectron spectra confirm the oxidation formula as Ag2+1Zn+2Sn+4Se4−2 and uniform distribution of elements is established by secondary ion mass spectrometer measurements, for precursor films pre-annealed at 250 °C for 20 min and selenized at 400 °C for 1 min. They possess n-type conductivity with a maximum mobility of 79.4 cm2(Vs)−1 and a direct band gap of 1.37 eV.