Stable Temperature Coefficient Research Articles

Thermal stability of dielectric properties of Dy-doped BaTiO3 for application in the ultra-thin multilayer ceramic capacitors

Rare earth elements are usually used to improve the performance of multilayer ceramic capacitors (MLCC), because their unique chemical and physical properties. Exploring the optimal method of rare earth doping is crucial to address the current performance deficiencies of MLCC. In this study, three samples with different doping levels of Dy and Ho selected to investigate the microstructure, dielectric performance, and reliability. Compared to the co-doping of Dy and Ho, excessive Dy doping exhibited better defect structure, resulting in smoother and more stable temperature coefficient of capacitance (TCC) curves and stronger suppression of oxygen vacancies. As the increase of Dy doping content, the activation energy of oxygen vacancies increased from 59.98 V/μm to 86.79 V/μm. This indicates that appropriate Dy doping has a superior effect on improving MLCC performance compared to co-doping systems. This work validates the complex defect structure induced by Dy doping and its improvement effect on MLCC performance, demonstrating the significant potential of Dy-doped MLCC.

One-step synthesis of Li2Mg2Mo3O12-(Li1/2Bi1/2)MoO4 composite ceramics with a stable temperature coefficient for ULTCC applications

One-step synthesis of Li2Mg2Mo3O12-(Li1/2Bi1/2)MoO4 composite ceramics with a stable temperature coefficient for ULTCC applications

Recovery of Ni-Co-Mn Oxides from End-of-Life Lithium-Ion Batteries for the Application of a Negative Temperature Coefficient Sensor

This study demonstrates the current advancements in battery management systems (BMSs), emphasizing the need for precise temperature monitoring within battery packs to enhance safety and performance through efficient thermal management. The increased demand for lithium-ion batteries (LIBs) has driven the development of temperature sensors with improved accuracy and stability. In particular, Ni-Co-Mn-based spinel oxides are commonly used due to their stable negative temperature coefficient (NTC) behavior. However, challenges arise in manufacturing due to the high cost and uncertain supply of critical cathode components (e.g., Co, Ni, and Mn) for LIBs. This research focuses on developing spinel-type (Ni0.6Co0.4Mn2)O4 using recycled Ni-Co-Mn oxides obtained from end-of-life (EOL) LIBs, demonstrating temperature resistance behavior suitable for temperature sensing. The oxides are prepared through hydrometallurgy, oxalate synthesis, and post-heat treatment. Successful integration into spinel-type NTC thermistors suggests broader applications in various industrial fields. A systematic investigation into the synthesis and characterization of recovered Ni-Co-Mn oxides from EOL LIB cathode materials (Li(Ni0.33Co0.33Mn0.33)O2) is presented for NTC thermistor application. Thermogravimetric analysis-derivative thermogravimetry (TGA-DTG) identifies the optimal post-heat treatment temperature. The X-ray diffraction (XRD) patterns confirm a cubic spinel structure of the Ni-Co-Mn oxides, supported by scanning electron microscope (SEM) images showing a uniform microstructure. Also, energy dispersive X-ray spectroscopy (EDS) mapping confirms homogeneous element distribution. Recovered oxide pellets from the sintering process exhibit a single spinel structure, with X-ray photoelectron spectroscopy (XPS) analysis revealing changes in the valence states for Ni and Mn. Resistivity measurements demonstrate semiconductive behavior, which shows a B value (3376.92 K) suitable for NTC thermistor applications. This study contributes valuable insights to black powder recycling from EOL LIBs and its potential in temperature-sensitive electronic devices.

Boiling-induced thermal degradation of copper inverse opals and its mitigation

Thermal management in power electronics relies on active and passive cooling devices that use porous copper structures. However, these critical components, such as sintered copper and copper inverse opals (CuIOs), degrade rapidly when exposed to working fluids like water and oxygen. This study investigates the thermal reliability of CuIO structures subjected to harsh boiling environments using pool-boiling tests. 10–30 μm-thick porous CuIO structures with a constant 5 μm pore diameter and neck openings of 0.6–1.4 μm are fabricated using electrodeposition on silicon through a polystyrene-sintered template. Pool-boiling heat transfer is mainly performed under a constant heat flux of ∼115 W cm−2 at a saturation temperature of 100 °C. As a result, severe degradation of CuIO structures occurs over 72 h. Therefore, A 50 nm-thick direct gold immersion coating is considered as a mitigation strategy. The gold-coated CuIO surface exhibits structural stability, maintaining a stable temperature and heat transfer coefficient compared to pristine CuIOs. Moreover, a reliability test in HFE-7100 is also conducted for applications with lower heat flux and operating temperature requirements. Extensive reliability tests on CuIOs with and without an Au protective coating reveal no noticeable degradation over 11 days at 50% and 67% of critical heat flux. This study provides essential reliability data for failure modeling and offers valuable insights into mitigation strategies and predictive tools for improving the reliability and life expectancy of CuIOs.

Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

Surface acoustic wave (SAW) resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN. The impact of device parameters including aspect ratio of length to width of resonators, number of interdigital transducers, and acoustic propagation direction on resonator performance have been studied. For the first time, we demonstrate wireless temperature sensing from 21.6 to 120 °C with a stable temperature coefficient of frequency of –24.3 ppm/°C on bulk GaN-based SAW resonators.

The effect of MgO doped on the microstructural and dielectric properties of (Bi<sub>1.5</sub>Zn<sub>0.5</sub>)(Ti<sub>1.5</sub>Nb<sub>0.5</sub>)O<sub>7</sub> ceramics

Dense ceramics of the pyrochlore (Bi1.5Zn0.5)(Ti1.5Nb0.5)O7 can be prepared at 1100 °C and exhibit a high permittivity (εr = 200) and low dielectric loss (tan δ < 1 × 10−4) at 1 MHz and room temperature. In this study, the effect of MgO addition on the phase evolution, sintering behaviour, microstructures and dielectric properties of (Bi1.5Zn0.5)(Ti1.5Nb0.5)O7 (BZTN) ceramics are investigated. The ceramics were sintered in air at temperatures ranging from 850° to 1000 °C. BZTN ceramics with small amount of MgO addition can significantly increase the density and improve the dielectric properties. It is found that MgO doped BZTN ceramics can be sintered at 900 °C to obtain a density higher than 94 % of the theoretical density. Scanning electron microscope (SEM) observations show that the BZTN grain sizes increase with increasing amounts of MgO. No secondary phases in the MgO doped BZTN ceramics were observed using X-ray diffraction (XRD) analysis. A high dielectric constant of 220, a low dielectric loss of 0.02 % and a stable temperature coefficient of capacitance (ΔC/C ∼ ±12 % in the temperature range from −55 to 125 °C) were obtained for 0.5 mol.% MgO-doped BZTN ceramics sintered at 900 °C for 2 h.

Nd1-xSrxMnO3 (x = 0.3): A perovskite manganite ceramic that exhibits PTC and NTC double properties

Nd1-xSrxMnO3 (NSMO, x = 0.280, 0.300, 0.330, 0.350, and 0.375) polycrystalline ceramics were fabricated using the sol-gel method. The crystal structure, surface morphology, valence state, elements distribution, and electrical properties were examined to understand the effect of Sr doping on NdMnO3 ceramics. The resistivity of the NSMO ceramics was measured using a standard four-probe method. The results obtained revealed that Sr doping significantly decreased the resistivity of the ceramics, which can be explained by the double exchange (DE) interaction and small-polaron hopping (SPH) model. The Nd0.70Sr0.30MnO3 ceramic had a positive temperature coefficient (PTC) of resistivity (16.69% K−1) at 197.5 K, and is expected to be used for preparing electronic switches with high sensitivity. Additionally, the NSMO ceramics maintained a stable negative temperature coefficient (NTC) of resistivity (−1% K−1) for x = 0.300 in the temperature range of 210.6–342.5 K. In conclusion, it is worth exploring materials with a high PTC and NTC over an extended temperature range, possessing the double potential function for high sensitivity or wide-temperature detection for electronic switches or infrared bolometers.

Tuning the order-disorder of Zn2–2xLixGa4+xO8 spinel towards high-performance microwave dielectric ceramic

High-Q Zn2–2xLixGa4+xO8 (0 ≤ x ≤ 1) ceramics with spinel structure were synthesized using the traditional solid-state method. Li+ and Ga3+ are introduced into ZnGa2O4 ceramic to tune the order-disorder of the structure. A disordered face-centered cubic phase is achieved in the compositional range of x < 0.9, and an ordered primitive cubic spinel is found as x ≥ 0.9. As x increases, Li+ preferentially occupies the octahedral site, causing partial Ga3+ to occupy the tetrahedron, making a 1:3 (Li: Ga) ordered structure in the octahedral site. A low relative permittivity (εr) of 10.1 and a relatively stable temperature coefficient of resonance frequency (τf) of − 52.3 ppm/°C of Li0.9Zn0.2Ga4.9O8 ceramic (x = 0.9) were attained when sintered at 1300 °C. A maximum quality factor was achieved at x = 0.75 (Li0.75Zn0.5Ga4.75O8) with Q×f = 120,370 GHz (f = 13 GHz). Moreover, the intrinsic influence mechanism of crystal structure on the dielectric properties was explored through the P–V–L chemical bond theory.

Improved energy storage in antiferroelectric AgNbO3-modulated 0.925Bi0.5Na0.5TiO3 – 0.075BaTiO3 relaxor ferroelectric ceramics

In this report, antiferroelectric AgNbO3-modified (1-x)(0.925Bi0.5Na0.5TiO3-0.075BaTiO3)-xAgNbO3 (x = 0–0.2) relaxor-ferroelectric ceramics were studied to optimize energy density and storage efficiency. Dielectric properties and microstructure were analyzed to explore the influence of antiferroelectric AgNbO3 (AN) in energy-storage performance of 0.925Bi0.5Na0.5TiO3-0.075BaTiO3 (BNBT) ceramics. By substituting proper AN concentrations (x ≤ 0.15), dielectric breakdown strength (BDS) can be effectively increased, while remanent polarization (Pr) and coercive field (Ec) were evidently reduced. The optimal recoverable energy density (Wrec) of 3.92 J/cm3 and storage efficiency (η) of 70% are respectively achieved for x = 0.1 (at E = 180 kV/cm) and x = 0.05 (at E = 110 kV/cm). Temperature-dependent dielectric permittivities show that 0.1∼0.15 AN-doped BNBT ceramics maintain low dielectric losses (tan δ < 0.1%) with a stable temperature coefficient of capacitance (TCC), which meets the X7R specification. This work demonstrates that antiferroelectric AN-doped BNBT relaxor-ferroelectric ceramics are suitable for using in high-density energy storage.

Structure characteristics and microwave dielectric properties of Pr2(Zr1−Ti )3(MoO4)9 solid solution ceramic with a stable temperature coefficient

· The sintering temperature of Pr 2 (Zr 1− x Ti x ) 3 (MoO 4 ) 9 ceramic was below 900 °C. · Effect of bond characteristics on Pr 2 (Zr 1− x Ti x ) 3 (MoO 4 ) 9 were discussed. · Excellent temperature stability was obtained (−14.1 ∼ −2.6 ppm/ °C). Pr 2 (Zr 1− x Ti x ) 3 (MoO 4 ) 9 ( x = 0.1–1.0) ceramics were prepared via a conventional solid-state method, the dependence of crystal structure and bond characteristics on microwave dielectric properties was investigated systemically. The X-ray diffraction patterns indicated that the single-phase Pr 2 Zr 3 (MoO 4 ) 9 structure was formed in all the specimens. As the Ti 4+ content increased, the lattice volume gradually decreased, which was ascribed to the fact that the ionic radius of Ti 4+ was smaller than that of Zr 4+ . Notably, outstanding microwave dielectric properties with ε r of 10.73–16.35, Q · f values of 80,696–18,726 GHz and minor τ f values −14.1 – −2.6 ppm/ °C were achieved in Pr 2 (Zr 1− x Ti x ) 3 (MoO 4 ) 9 ceramics. The ε r increased with the rising x values, which was associated with the increase of α / V m values. The decreasing Q · f was affected by the decline of lattice energy of [Zr/TiO 6 ] octahedral. The τ f value was dominated by [Zr/TiO 6 ] octahedral distortion, Mo–O bond energy, bond strength and B-site bond valence. Furthermore, infrared reflection spectra suggested that the properties were mainly caused by the absorption of phonon, and the dielectric loss could be further reduced by optimizing the experimental process.

Microwave dielectric high-entropy ceramic Li(Gd0.2Ho0.2Er0.2Yb0.2Lu0.2)GeO4 with stable temperature coefficient for low-temperature cofired ceramic technologies

High-entropy ceramics are new single-phase materials with at least four cation or anion types. Their large configurational entropy is believed to enhance the simultaneous solubility of many components, which can be used to optimize certain properties. In this work, a high-entropy oxide, Li(Gd 0.2 Ho 0.2 Er 0.2 Yb 0.2 Lu 0.2 )GeO 4 (LRG) was explored as a microwave dielectric ceramic for low-temperature cofired ceramic technologies. The LRG high-entropy ceramic with an olivine structure formed in the sintering temperature range of 1020–1100 °C. The minimal distortion (5 × 10 -4 ) of the [RO 6 ] octahedron led to a stable temperature coefficient of resonant frequency ( τ f ) of –5.3 to –2.9 ppm/°C. Optimal microwave dielectric properties were achieved in the high-entropy ceramics at 1080 °C for 4 h with a relative density of 94.9%, a relative permittivity ( ε r ) of 7.2, and a quality factor ( Q × f ) of 29000 GHz (at 15.3 GHz). For low-temperature cofired ceramic technology applications, the sintering temperature of the LRG high-entropy ceramic was reduced to 900 °C by the addition of 3 wt% H 3 BO 3 , which exhibited outstanding microwave dielectric properties ( ε r = 7.6, Q × f = 11700 GHz, and τ f = –7.4 ppm/°C) and a good chemical compatibility with silver. • The high-entropy strategy is applied to the field of microwave dielectric ceramics to study the effect of crystal structure on microwave dielectric properties. • A high-entropy oxide Li(Gd 0.2 Ho 0.2 Er 0.2 Yb 0.2 Lu 0.2 )GeO 4 (LRG) with olivine structure is prepared as a microwave dielectric ceramic at the sintering temperature range of 1020 – 1100 °C. • LRG high-entropy ceramic exhibits a near-zero τ f value of -2.9 ppm/°C, which is due to the distortion of oxygen octahedron caused by the five cations of Gd 3+ , Ho 3+ , Er 3+ , Yb 3+ , and Lu 3+ simultaneously occupy the position of the [RO 6 ] octahedron. • The LRG high-entropy ceramic doped with 3 wt% H 3 BO 3 provides low sintering temperature (900 °C), good chemical compatibility with silver, and microwave dielectric properties ( ε r = 7.6, Q × f = 11700 GHz, and τ f = -7.4 ppm/°C), which are suitable for LTCC technologies.

Surface-modified Zn0.5Ti0.5NbO4 particles filled polytetrafluoroethylene composite with extremely low dielectric loss and stable temperature dependence

Polymer-ceramic composites are widely applied in microwave substrate materials due to the excellent dielectric properties and simple preparation process recently. Polytetrafluoroethylene-based (PTFE) composites filled with Zn0.5Ti0.5NbO4 (ZTN) ceramic particles were fabricated by hot-pressing. The particles were modified by C14H19F13O3Si to enhance the interface compatibility between PTFE and ZTN powders, which was characterized by X-ray photoelectron spectroscopy (XPS) and contact angle. The surface characteristic of particles transformed into hydrophobicity and tight microstructure as well as better dielectric properties were obtained after the surface modification. The microstructure, dielectric, thermal, mechanical properties, and water absorption of the composites concerning ZTN content were investigated. Modified ZTN/PTFE composites with 50 vol% ZTN particles exhibit excellent dielectric properties with a high dielectric constant of 8.3, an extremely low dielectric loss of 0.00055 at 7 GHz, and a stable temperature coefficient of the dielectric constant of −12.2 ppm/°C. All the properties show modified ZTN particles filled PTFE composite is the potential material for microwave substrate application.

Internal relations between crystal structures and dielectric properties of (1-x)BaWO4-xTiO2 composite ceramics

(1-x)BaWO4-xTiO2 (x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25, BWT) ceramics were prepared by traditional solid-state method. The XRD patterns indicate that the BWT ceramics exist as composites, and the Raman spectra show that as TiO2 increases, the vext mode shifts to a low wavenumber and the Ba–O bond length decreases. The variations in FWHM values of the v3(Eg) modes and c/a values indicate the changes in the ordered structures that lead to the increase in dielectric loss. The infrared spectra were fitted by the FPSQ model, and the external mode (Eu) contributes most to the dielectric properties, which is related to the Ba–O bond vibration. With the increase in x values, the τf values increase from − 101.61 to − 6.71 ppm/°C, the er values increase from 8.03 to 9.49, and the 0.75BaWO4–0.25TiO2 ceramic with stable temperature coefficient was obtained: er = 9.49, Q × f = 20,602 GHz (f = 17.99 GHz), τf = − 6.71 ppm/°C.

Controllable Filtering Structure Using Magnetic Coupling Between Spoof Plasmonic Waveguide and Solid Dielectric Resonators

The structure and electrical characteristics of a dielectric resonator (abbreviated as DR hereafter) loaded plasmonic waveguide with controllable bandwidth are investigated in the present research. By loading the high permittivity dielectric medium on a spoof surface plasmonic waveguide, the working bandwidth of the filtering structure can be regulated flexibly due to the resonant effect of the loaded cylindrical DR. The DR is home-made and possesses the permittivity of 25.66, tanδ of 5.3 × 10 -5 and stable temperature coefficient of -6.3 ppm/°C in microwave region. After the DR is loaded, the filtering structure can form the transmission zero on the edge of the pass band, regulating the bandwidth as well as increasing the out-of-band rejection. By controlling the height between the loaded DR and the substrate, or adjusting the inter-distance between the DRs, the relative bandwidth of the filtering structure can be effectively tailored.

Simultaneous realization of broad temperature stability range and outstanding dielectric performance in (Ag+, Ta5+) co–doped TiO2 ceramics

Effects of sintering condition on dielectric properties and microstructure were systematically investigated in (Ag1/4Ta3/4)0.005Ti0.995O2 ceramics. A giant dielectric constant of ∼9831 (1 kHz) and a relatively low dielectric loss of ∼0.041 (1 kHz) were realized at the optimal sintering condition of 1330 °C with a holding time for 10 h. Notably, stable temperature coefficient (within −6.8% to 8.8%) of the dielectric constant at 10 kHz was achieved in a broader temperature range (-200–200 °C), which shows superior temperature stability of our sample than the application requirements (−55–200 °C and Δεr/ε25 °C < ±15%) of commercial X9R capacitor.

Influence of oxygen atmosphere annealing on the thermal stability of Mn1.2Co1.5Ni0.3O4±δ ceramic films fabricated by RF magnetron sputtering

This paper presents the optimal atmosphere annealing conditions for Mn1.2Co1.5Ni0.3O4±δ ceramic thin films fabricated by the RF magnetron sputtering method. The microstructure and oxygen distribution, together with electrical properties, are combined and applied for determining thermal stability. All of the Mn1.2Co1.5Ni0.3O4±δ films, which are annealed at various oxygen atmosphere from 1 × 10−3 to 1 × 105Pa, exhibit a negative temperature coefficient characteristic and show a poly-crystalline spinel structure. The film which annealed at 10Pa with the most uniform and most dense surface morphology has the minimum resistivity compared to the others. It is characterized by the highest Mn3+ and Mn4+ pair content, which gives the highest carrier concentration of ceramic films. Combined with the aging test at 125°C for 500h, the films annealed at 10Pa have the minimum resistance drift (ΔR/R0 = 2.35%), which is mainly affected by the oxygen vacancy concentration. This demonstrates that the film thermistors annealed in a hypoxia state will never be stable. This is because there will be several oxidation reactions leading to a continuous generation of cationic vacancies during high temperature aging. The present results will open a way to design desired stable negative temperature coefficient thermistors by adjusting the annealing oxygen atmosphere of films.

Stable temperature coefficient of resistance in TiSiON thin film resistors deposited by magnetron co-sputtering

Thin films of titanium/silicon (Ti:Si) are widely employed in the electronics industry because of their metal-like characteristics. The use of films as thin film resistor (TFR) based on Ti:Si has not yet been reported. In this paper, the TFR characteristics of TiSiON with different compositions and deposited in Argon atmosphere with either 1% Oxygen or 1% Oxygen/3% Nitrogen are studied. The film composition was varied through a co-sputtering approach from titanium and silicon targets and the sheet resistance (Rsh) and temperature coefficient of resistance (TCR) were evaluated. The film composition was evaluated by X-ray photoelectron spectroscopy (XPS); carrier mobility, type and concentration by Hall effect methods and film microstructure by X-Ray diffraction. Nitrogen addition during the deposition reduces oxidized species in the TFR and increases film stability. The addition of nitrogen results in TFR films with partially oxidized titanium and silicon and TFR values closer to zero TCR without impacting film resistance. Films deposited without nitrogen result in more unstable films and larger TCR. A near-zero TCR film was found for a Ti:Si ratio of 1.6, exhibiting a Rsh at 25 °C of 0.7 kOhms with a TCR value of −171 ppm/°C after annealing at 450 °C in forming gas.

Phase composition and microwave dielectric properties of SrTiO3 modified Mg2Al4Si5O18 cordierite ceramics

The effects of SrTiO3 addition on phase composition and microwave dielectric properties of cordierite (Mg2Al4Si5O18) ceramics had been investigated in this paper. X-ray diffraction data showed that (1−x)Mg2Al4Si5O18–xSrTiO3|(1−x)MAS−xST (0⩽x⩽0.35)| ceramics presented β-cordierite solid solution within 0<x⩽0.10. In the range of 0.15⩽x⩽0.35, the perovskite-structured SrTiO3 and monoclinic phase of SrAl2Si2O8 feldspar were detected. Rietveld refinement of XRD data showed the shapes of [(Si4Al2)O18] hexagonal rings in (1−x)MAS–xST (0<x⩽0.10) happened to adjust from non-symmetry rings to centro-symmetry equilateral rings, along with the solution of SrTiO3 into cordierite. The densification sintering temperatures of (1−x)MAS–xST ceramics were effectively lowered as to the effect of SrAl2Si2O8 feldspar acting as liquid sintering aids, accompanying the improvement of microstructure of (1−x)MAS–xST (0⩽x⩽0.35) ceramics. Finally, the (1−x)MAS–xST (x=0.10) ceramics possessed the best optimal Qf value: εr=6.53, Qf=80,600GHz (fo=13.6GHz), τf=−18ppm/°C. The (1−x)MAS–xST (x=0.20) ceramics achieved a relative stable temperature coefficient of resonant frequency with: εr=6.01, Qf=51,800GHz (fo=13.1GHz), τf=−11ppm/°C.

Structural and dielectric properties of BaTiO3–Bi(Mg1/2Ti1/2)O3 thin films fabricated by chemical solution deposition

Thin films of the BaTiO3–Bi(Mg1/2Ti1/2)O3 (BT–BMT) solid-solution system were fabricated with the aim of achieving a stable temperature coefficient of capacitance (TCC) favorable for high-temperature electronics. A single perovskite phase with pseudocubic symmetry was obtained for the films fabricated by chemical solution deposition on (111)Pt/TiO2/(100)Si substrates in the composition range of x = 0–0.80 for (1 − x)BT–xBMT. BMT added to the BaTiO3-based films enhanced the crystallinity of the perovskite phase and resulted in saturated P–E hysteresis behavior with remanent polarization of up to 13 µC/cm2. BMT addition led to gradual dielectric relaxation, which also resulted in stable TCC behavior with a relative dielectric constant of approximately 400 in the temperature range of RT − 400 °C, especially for the BT–BMT films with x = 0.20–0.40.

Characterization and Synthesis of Additive Coated BaTiO3 Nano-Powder

Two different BaTiO3 (160nm) nanopowders coated with Y and with Dy were fabricated by an aqueous chemical coating method, and their dielectric properties and microstructures were investigated with X-ray diffraction, Impedance analyzer, SEM and TEM. Y and Dy were coated on the BaTiO3 powder using nitrates. Coated BaTiO3 powders were pressed in a disk shape and sintered at 1150~1200°C for 2 hours in reduced atmosphere of 10%H2 - 90%N2. Coating layer of the BaTiO3 particle was thin with a thickness of 3 ~ 5nm. Coated BaTiO3 sintered sample exhibited a larger lattice parameter (a, c) and smaller tetragonality (c/a) than pure BaTiO3 one. Y coated BaTiO3 sample sintered at 1200°C showed good dielectric properties with a high dielectric constant of around 2000 and a stable temperature coefficient of capacitance (TCC).