Group-10 transitional metal dichalcogenide, in particular Platinum selenide (PtSe2), have attracted substantial attention owing to its fascinating properties such as high carrier mobility, narrow bandgap, and high stability in contrast to other low bandgap 2D materials. However, in bare PtSe2, high dark current and lower sensitivity restrict to make high-performance broadband photodetector. Herein, a large area and stable PtSe2/MoS2 heterostructure based photodetector is fabricated which exhibits suppressed dark current and high-performance with broad 400-1200 nm detection, covering visible to near-infrared region (NIR). The PtSe2/MoS2 heterostructure device exhibits ∼103 order reduction in the dark current, high detectivity, and better stable response as compared to its bare PtSe2 device. Moreover, under NIR (900 nm) illumination, the PtSe2/MoS2 device demonstrates high responsivity of 17.9 AW−1 and high specific detectivity of 9.8 × 1012 Jones at amoderate bias of −5V. It exhibits ultra-fast response with rise/ fall time of 103 μs/117 μs corroborating its high performance. To understand the working of PtSe2/MoS2 photodetector, a detailed carrier transport mechanism is investigated based on the interface. This work provides a facile strategy to fabricate large area, fast response and high-performance broadband photodetector to build future optoelectronic devices.