Device Stability Research Articles

Controlling the temperature coefficient of dielectric constant of polyphenylene oxide-based composites

The temperature coefficient of dielectric constant (τε) is a crucial parameter for assessing the performance stability of microwave devices operating under varying temperature conditions. In this study, polyphenylene oxide (PPO) resin was utilized as the matrix and six types of ceramics with distinct temperature coefficients of dielectric constant were employed as fillers. Six PPO-based composites were fabricated through twin-screw extrusion combined with hot pressing route. The dielectric properties of the ceramics and their influence on the dielectric properties of the composites, particularly the τε, were systematically investigated. The results revealed that all six types of composites exhibited dense structures and uniform filler distribution, with a relative density exceeding 98.0 % and a water absorption below 0.1 %. The dielectric constant and its temperature coefficient of the fillers had a more pronounced effect on the dielectric properties of the composites, compared to dielectric loss. The dielectric constants of the six types of composites aligned well with the theoretical values predicted by the effective medium theory. Reaching up to 9.7 (at 10 GHz). The dielectric loss ranged from 1.0 × 10−3 to 3.0 × 10−3. Notably, the PPO/Mg0.95Ca0.05TiO3 composite substrate with a filler ratio of 40 vol% exhibited exceptional dielectric properties: εr = 6.8, tgδ = 1.4 × 10−3, τε = −8.6 ppm/°C, highlighting its significant advantages for communication applications under varying temperature conditions.

Linkage Regulation of Back‐To‐Back Connected Dimers as Guest Acceptors Enables Organic Solar Cells with Excellent Efficiency, Stability and Flexibility

AbstractHigh efficiency, stability, and flexibility are key prerequisites for the commercial applications of organic solar cells (OSCs). Herein, three back‐to‐back connected dimers (2Qx‐TT, 2Qx‐C3, 2Qx‐C6) are developed as the guest acceptors for OSCs with improved comprehensive performance. By regulating the linkage from rigid bithiophene to flexible alkyl chain, the back‐to‐back connected dimers display quite different molecular geometry and intermolecular interactions, consequently influencing their packing arrangement, film‐forming process, carrier mobilities, and the device efficiency, stability, and flexibility. By introducing these dimer acceptors as the guest into active layer, these dimers form alloy phases with the host acceptor, promoting film‐forming process and charge dynamics. All ternary devices exhibit improved PCEs of over 18% than the control binary device. Among them, 2Qx‐C3‐based ternary device obtains the best efficiency of as high as 19.03%. Moreover, thanks to the stronger entanglement favored by the dimers with flexible linkage, the PM6:BTP‐eC9:2Qx‐C3‐based device shows outstanding stability and flexibility. The flexible device displays an improved PCE of 16.09% with a crack‐onset strain of 15.0%, showing excellent mechanical robustness close to the all‐polymer devices. This work demonstrates the potential of the back‐to‐back connected dimer acceptors as the guest for highly efficient, stable and flexible OSCs.

An acoustic bellows-type round window transducer for middle-ear implants

BackgroundThis study describes the development of output devices for round window middle-ear. To overcome the problems of output devices that apply sound pressure directly to the round window, an acoustic bellows-type round window transducer was implemented by combining a small bellows, acoustic tube, and balanced armature driver. MethodsThe output characteristics of the proposed acoustic bellows-type round window transducer were confirmed through bench tests and distortion measurements. To compare the vibration transmission characteristics of the proposed transducer with those of sound pressure stimulation devices, an experiment was performed using four human temporal bones. FindingsThe average output magnitude of the acoustic bellows-type round window transducer was equivalent to sound pressure levels of 92, 96, and 108 dB for frequency ranges of <1, 1–2, and > 2 kHz, respectively. The results showed that the proposed transducer delivered vibration consistently without reducing the sound pressure level due to leakage, unlike the sound pressure stimulation device. InterpretationTherefore, the acoustic bellows-type round window transducer is a more stable and suitable output device for round window middle-ear implants than a sound pressure stimulation device. It is expected to overcome the limitations of sound pressure stimulation devices and to contribute to new technical solutions in the field of round window middle-ear implants development.

Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection

AbstractOrganic–inorganic hybrid halide perovskites have emerged as the most promising optoelectronic materials for next‐generation solution‐processed devices, primarily attributed to their distinctive properties such as cost‐effectiveness, facile fabrication process, high light absorption coefficient, tunable bandgap, and relatively high charge carrier mobility. Nevertheless, the presence of Pb elements is inevitable in most high‐performance perovskite optoelectronic devices, posing environmental pollution concerns and impeding their commercialization. In this study, two novel non‐toxic bismuth‐ and antimony‐based perovskite materials with environmentally conscious approaches are developed. Their structures and optoelectronic properties have been systematically characterized. Subsequently, photoconductive‐ and photodiode‐type photodetectors are designed and fabricated. Notably, the photodiode configuration exhibits exceptionally low dark current and noise, superior detection sensitivity, fast response speed, and good device stability. Owing to these superior performance metrics, the devices demonstrate great potential for real applications. Furthermore, this study furnishes a theoretical framework and design perspectives for the solution‐processed semiconductor materials.

Spin-Coated and Vacuum-Processed Hole-Extracting Self-Assembled Multilayers with H-Aggregation for High-Performance Inverted Perovskite Solar Cells.

We report a highly crystalline self-assembled multilayer (SAMUL) that is fundamentally different from the conventional monolayer or disordered bilayer used for hole-extraction in inverted perovskite solar cells (PSCs). The SAMUL can be easily formed on ITO substrate to establish better surface coverage to enhance the performance and stability of PSCs. A detailed structure-property-performance relationship of molecules used for SAMUL is established through a systematic study of their crystallinity, molecular packing, and hole-transporting properties. These SAMULs are rationally optimized by varying their molecular structures and deposition methods through thermal evaporation or spin-coating for fabricating PSCs. The CbzNaphPPA-based SAMUL was chosen for fabricating inverted PSCs due to it exhibiting the highest crystallinity and hole mobility which is derived from the ordered H-aggregation. This resulted in a remarkably high fill factor of 86.45 %, which enables a very impressive power conversion efficiency (PCE) of 26.07 % to be achieved along with excellent device stability (94 % of its initial PCE retained after continuous operation for 1200 h under 1-sun irradiation at maximum power point at 65 °C). Additionally, a record-high PCE of 23.50 % could be achieved by adopting a thermally evaporated SAMUL. This greatly simplifies and broadens the scope for SAM to be used for large-area devices on diverse substrates.

Non‐Ionic Perylene‐Diimide Polymer as Universal Cathode Interlayer for Conventional, Inverted, and Blade‐Coated Organic Solar Cells

AbstractAs a class of predominantly used cathode interlayers (CILs) in organic solar cells (OSCs), perylene‐diimide (PDI)‐based polymers exhibit intriguing characteristics of excellent charge transporting capacity and suitable energy levels. Despite that, PDI‐based CILs with satisfied film‐forming ability and adequate solvent resistance are rather rare, which not only limits the further advance of OSC performances but also hinders the practical use of PDI CILs. Herein, we designed and synthesized two non‐conjugated PDI polymers for achieving high power conversion efficiency (PCE) in diverse types of OSCs. The utilization of oligo (ethylene glycol) (OEG) linkage enhanced the n‐doping effect of PDI polymers, leading to an improved ability of the CIL to reduce work function and improve electron transporting capability. Moreover, the introduction of the non‐ionic OEG chain effectively improve the wetting property and solvent resistance of PDI polymers, so the PPDINN CIL can withstand diverse processing conditions in fabricating different OSCs, including conventional, inverted and blade‐coated devices. The binary OSC with conventional structure using PPDINN CIL showed a PCE of 18.6 %, along with an improved device stability. Besides, PPDINN is compatible with the large‐area blade‐coating technique, and a PCE of 16.6 % was achieved in the 1‐cm2 OSC where a blade‐coated PPDINN was used.

Non-Ionic Perylene-Diimide Polymer as Universal Cathode Interlayer for Conventional, Inverted, and Blade-Coated Organic Solar Cells.

As a class of predominantly used cathode interlayers (CILs) in organic solar cells (OSCs), perylene-diimide (PDI)-based polymers exhibit intriguing characteristics of excellent charge transporting capacity and suitable energy levels. Despite that, PDI-based CILs with satisfied film-forming ability and adequate solvent resistance are rather rare, which not only limits the further advance of OSC performances but also hinders the practical use of PDI CILs. Herein, we designed and synthesized two non-conjugated PDI polymers for achieving high power conversion efficiency (PCE) in diverse types of OSCs. The utilization of oligo (ethylene glycol) (OEG) linkage enhanced the n-doping effect of PDI polymers, leading to an improved ability of the CIL to reduce work function and improve electron transporting capability. Moreover, the introduction of the non-ionic OEG chain effectively improve the wetting property and solvent resistance of PDI polymers, so the PPDINN CIL can withstand diverse processing conditions in fabricating different OSCs, including conventional, inverted and blade-coated devices. The binary OSC with conventional structure using PPDINN CIL showed a PCE of 18.6 %, along with an improved device stability. Besides, PPDINN is compatible with the large-area blade-coating technique, and a PCE of 16.6 % was achieved in the 1-cm2 OSC where a blade-coated PPDINN was used.

Spin‐Coated and Vacuum‐Processed Hole‐Extracting Self‐Assembled Multilayers with H‐Aggregation for High‐Performance Inverted Perovskite Solar Cells

AbstractWe report a highly crystalline self‐assembled multilayer (SAMUL) that is fundamentally different from the conventional monolayer or disordered bilayer used for hole‐extraction in inverted perovskite solar cells (PSCs). The SAMUL can be easily formed on ITO substrate to establish better surface coverage to enhance the performance and stability of PSCs. A detailed structure‐property‐performance relationship of molecules used for SAMUL is established through a systematic study of their crystallinity, molecular packing, and hole‐transporting properties. These SAMULs are rationally optimized by varying their molecular structures and deposition methods through thermal evaporation or spin‐coating for fabricating PSCs. The CbzNaphPPA‐based SAMUL was chosen for fabricating inverted PSCs due to it exhibiting the highest crystallinity and hole mobility which is derived from the ordered H‐aggregation. This resulted in a remarkably high fill factor of 86.45 %, which enables a very impressive power conversion efficiency (PCE) of 26.07 % to be achieved along with excellent device stability (94 % of its initial PCE retained after continuous operation for 1200 h under 1‐sun irradiation at maximum power point at 65 °C). Additionally, a record‐high PCE of 23.50 % could be achieved by adopting a thermally evaporated SAMUL. This greatly simplifies and broadens the scope for SAM to be used for large‐area devices on diverse substrates.

Desıgn of quantum-dot semiconductor optical amplifiers wıth near-zero linewidth enhancement factor

The linewidth enhancement factor (LWEF) of a semiconductor optical amplifier (SOA) quantifies refractive index fluctuations in the gain medium, which induce phase distortion in the amplified optical signal. Optoelectronic systems employing SOAs with high LWEFs often exhibit poor device stability and beam coherence. Thus, designing SOAs with low LWEF is imperative. Recently, Quantum-Dot (QD) SOAs have emerged as a solution for LWEF suppression due to quantum-confinement effects enabling tunability of the QD carrier density and emission frequency. In this study, we aim to design a composite active region comprised of a host medium and the embodied QDs, to explore the corresponding LWEF variation and propose the ultimate design strategy to achieve near-zero LWEF in QD SOAs for enhancing device stability and beam coherence. Our approach entails modeling the refractive index of the composite active region using effective medium approximation via Maxwell–Garnett mixing formulation. We then extensively tune key SOA parameters, including QD carrier density, QD emission frequency, and the collision-time constant of the carriers to uncover the optimal configuration for minimizing the LWEF. Based on empirical values, we have developed and validated a simple yet effective algorithm that precisely simulates LWEF behavior in response to changes in key QD SOA parameters. This approach offers a straightforward model for estimating LWEF variation, and its corresponding minimization in QD SOAs without requiring complex experimental measurement techniques.

Nanoparticle-Enabled Zn-0.1Mg Alloy with Long-Term Stability, Refined Degradation, and Favorable Biocompatibility for Biodegradable Implant Devices.

Zinc-based alloys, specifically Zn-Mg, have garnered considerable attention as promising materials for biodegradable implants due to their favorable mechanical strength, appropriate corrosion rate, and biocompatibility. Nevertheless, the alloy's lack of mechanical stability and integrity, resulting from ductility loss induced by age hardening at room temperature, hampers its practical bioapplication. In this study, ceramic nanoparticles have been successfully incorporated into the Zn-Mg alloy system, leading to a significant improvement in long-term stability as well as mechanical strength and ductility. In addition, this study represents the first investigation of Zn-based nanocomposites both in vitro and in vivo to comprehend the influence of nanoparticles on the degradation behavior and biocompatibility of the Zn system. The findings indicate that the incorporation of WC nanoparticles effectively refines and stabilizes the degradation behavior of Zn-Mg without negatively impacting the cytocompatibility of the alloy. The subcutaneous implantation and femoral implantation further prove the benefits of nanoparticle incorporation and found no negative effects. Collectively, Zn-Mg-WC nanocomposites yield great potential for implant usage.

DUDS: Diversity-aware unbiased device selection for federated learning on Non-IID and unbalanced data

Federated Learning (FL) is a distributed machine learning approach that preserves privacy by allowing numerous devices to collaboratively train a global model without sharing raw data. However, the frequent exchange of model updates between numerous devices and the central server, and some model updates are similar and redundant, resulting in a waste of communication and computation. Selecting a subset of all devices for FL training can mitigate this issue. Nevertheless, most existing device selection methods are biased, while unbiased methods often perform unstable on Non-Independent Identically Distributed (Non-IID) and unbalanced data. To address this, we propose a stable Diversity-aware Unbiased Device Selection (DUDS) method for FL on Non-IID and unbalanced data. DUDS diversifies the participation probabilities for device sampling in each FL training round, mitigating the randomness of the individual device selection process. By using a leader-based cluster adjustment mechanism to meet unbiased selection constraints, DUDS achieves stable convergence and results close to the optimal, as if all devices participated. Extensive experiments demonstrate the effectiveness of DUDS on Non-IID and unbalanced data scenarios in FL.

A Graded Redox Interfacial Modifier for High-Performance Perovskite Solar Cells.

Perovskite solar cells have emerged as a potential competitor to the silicon photovoltaic technology. The most representative perovskite cells employ SnO2 and spiro-OMeTAD as the charge-transport materials. Despite their high efficiencies, perovskite cells with such a configuration show unsatisfactory lifespan, normally attributed to the instability of perovskites and spiro-OMeTAD. Limited attention was paid to the influence of SnO2, an inorganic material, on device stability. Here we show that improving SnO2 with a redox interfacial modifier, cobalt hexammine sulfamate, simultaneously enhances the power-conversion efficiency (PCE) and stability of the perovskite solar cells. Redox reactions between the bivalent cobalt complexes and oxygen lead to the formation of a graded distribution of trivalent and bivalent cobalt complexes across the surface and bulk regions of the SnO2. The trivalent cobalt complex at the top surface of SnO2 raises the concentration of (SO3NH2)- which passivates uncoordinated Pb2+ and relieves tensile stress, facilitating the formation of perovskite with improved crystallinity. Our approach enables perovskite cells with PCEs of up to 24.91%. The devices retained 93.8% of their initial PCEs after 1000 hours of continuous operation under maximum power point tracking. These findings showcase the potential of cobalt complexes as redox interfacial modifiers for high-performance perovskite photovoltaics.

A Graded Redox Interfacial Modifier for High‐Performance Perovskite Solar Cells

Perovskite solar cells have emerged as a potential competitor to the silicon photovoltaic technology. The most representative perovskite cells employ SnO2 and spiro‐OMeTAD as the charge‐transport materials. Despite their high efficiencies, perovskite cells with such a configuration show unsatisfactory lifespan, normally attributed to the instability of perovskites and spiro‐OMeTAD. Limited attention was paid to the influence of SnO2, an inorganic material, on device stability. Here we show that improving SnO2 with a redox interfacial modifier, cobalt hexammine sulfamate, simultaneously enhances the power‐conversion efficiency (PCE) and stability of the perovskite solar cells. Redox reactions between the bivalent cobalt complexes and oxygen lead to the formation of a graded distribution of trivalent and bivalent cobalt complexes across the surface and bulk regions of the SnO2. The trivalent cobalt complex at the top surface of SnO2 raises the concentration of (SO3NH2)‐ which passivates uncoordinated Pb2+ and relieves tensile stress, facilitating the formation of perovskite with improved crystallinity. Our approach enables perovskite cells with PCEs of up to 24.91%. The devices retained 93.8% of their initial PCEs after 1000 hours of continuous operation under maximum power point tracking. These findings showcase the potential of cobalt complexes as redox interfacial modifiers for high‐performance perovskite photovoltaics.

An amperometric stability study of titanium dioxide nanoparticle layer on interdigitated electrode contact based on morphology, structure, and surface-induced response

This paper investigates the amperometric stability of a Titanium Dioxide (TiO2) nanoparticle layer on an interdigitated electrode (IDE) to develop stable electronic devices. The devices were tested with varying numbers of spin-coat layers and annealing temperatures to achieve a TiO2 nanoparticle layer with high crystallinity. Device fabrication involved coating a TiO2 solution onto a silicon dioxide (SiO2) wafer with an IDE photomask. The devices were characterized using a Field-emission Scanning Electron Microscope (FESEM) and X-ray Diffractometer (XRD) to verify the crystallinity of the TiO2. Current-voltage (I-V) curves and real-time current measurements were also conducted to analyze the electrical properties of the device. FESEM results indicate that increasing the number of spin-coat layers and annealing temperature enhances the clarity of the spherical shape of TiO2 nanoparticles and produces highly crystalline nanoparticles, as confirmed by XRD analysis. In terms of electrical analysis, the device exhibited a sharp increase in current, maintaining a range of 2.5 nA to 10 nA. This concludes that the TiO2 device is highly sensitive, with excellent repeatability and response time, making it suitable for practical applications.

DFT based computational investigations of the physical properties of chalcogenide perovskites CsXS3 (X=P, Ta) for optoelectronic and photovoltaic applications

In this study, we employed density functional theory (DFT) calculations to systematically characterize the structural, mechanical, electronic, thermal, and optical properties of CsXS₃ (X = P, Ta), one of the most promising members of the chalcogenide perovskite (CP) family. Our theoretical findings align strongly with reported syntheses of other CP's, highlighting CsXS₃ (X = P, Ta) as most stable compounds. These materials satisfy the Born stability criteria, indicating robust mechanical stability, exhibit anisotropy, and demonstrate acceptable resistance to deformation under external stress. CsPS₃ and CsTaS₃ feature direct bandgaps of 1.91 eV and 0.51 eV, with small photocarrier effective masses, high absorption coefficients (1.6 × 10⁶ and 2.1 × 10⁶ cm⁻1), low reflectivity (15 % and 20 %), reduced loss function (0.6 and 0.4) and low refractive index (2.5 and 3.1), respectively. These properties underscore the potential of CsXS₃ (X = P, Ta)-based CP's for developing more efficient and stable optoelectronic devices and indoor photovoltaics. Notably, CsPS₃ is a strong contender for thermoelectric applications due to its lower Debye temperature compared to other CP's. Overall, our results demonstrate the great promise of CsXS₃ (X = P, Ta) chalcogenide perovskites in advancing the field of renewable energy and optoelectronics.

A Facile Low Prevacuum Treatment to Enhance the Durability of Nonfullerene Organic Solar Cells

Herein, a straightforward vacuum‐assisted method is introduced to enhance the stability of nonfullerene organic solar cells (OSCs). The method, termed “prevacuum” involves subjecting the active layer (D18:Y6) to a low‐pressure vacuum (−1 bar) before thermal annealing at 100 °C. Compared to untreated devices, prevacuum‐treated OSCs exhibit a notable increase in power conversion efficiency from 13.71% to 14.90%. This enhancement is attributed to improved light absorption and charge extraction, as evidenced by external quantum efficiency measurements. Moreover, prevacuum treatment significantly improves device stability under operational conditions, with a 30% power loss occurring after 8.25 h compared to 4.5 h for untreated devices. This improvement is attributed to the removal of volatile components and impurities during the vacuum process, leading to a more hydrophobic and stable active layer. The study demonstrates the efficacy of prevacuum treatment as a simple and accessible method for enhancing the performance and longevity of OSCs, paving the way for their broader application in sustainable energy technologies.

Enhancing Specific Detectivity and Device Stability in Vacuum-Deposited Organic Photodetectors Utilizing Nonfullerene Acceptors.

Organic photodetector (OPD) studies have undergone a revolutionary transformation by introducing nonfullerene acceptors (NFAs), which provide substantial benefits such as tunable band gaps and enhanced absorption in the visible spectrum. Vacuum-processed small-molecule-based OPD devices are presented in this study by utilizing a blend of boron subphthalocyanine (SubPc) and chlorinated subphthalocyanine (Cl6SubPc) as the active layer. Four different active layer thicknesses are further investigated to understand the intrinsic phenomena, unveiling the suppression of dark current density while maintaining photoexcitation and charge separation efficiency. Experimental results reveal that, at an applied bias of -3 V, the 50-nm-thick active layer achieves a remarkably low dark current density of 1.002 nA cm-2 alongside a high external quantum efficiency (EQE) of 52.932% and a responsivity of 0.226 A W-1. These impressive performance metrics lead to a specific detectivity of 1.263 × 1013 Jones. Furthermore, the findings offer new insights into intrinsic phenomena within the bulk heterojunction (BHJ), such as thermally generated current and exciton quenching. This integration is potentially well-heeled to revolutionize display technology by combining high-sensitivity photodetection, offering new possibilities for novel display panels with sensing applications.

Designed bimetallic layer-encapsulated tungsten powders for reinforcing tungsten-silver matrix composite electrical contact materials

Electrical contact materials (ECMs) play a pivotal role in maintaining the stability and efficiency of electrical instruments and electronic devices by regulating the current flow. As an essential member of ECMs, W-Ag matrix composite ECMs (W-Ag-MC-ECMs) are integral, demonstrating commendable resistance to welding and arc erosion. However, the limited wettability between the two phases curtails their broader applications. Herein, Ag-Cu and Ag-Ni bimetallic layer-encapsulated tungsten powders were designed and successfully synthesized through a two-step electroless plating process. Subsequently, the W-Ag-MC-ECMs were fabricated following the powder metallurgy route, including the solution ball milling process and the spark plasma sintering technique. The results indicated that Cu-Ag solid solution and Ni with a metal binder effect could strengthen the interface bonding, which can dramatically improve the microhardness (up to 182HV), strength (up to 600 MPa), ductility (up to 24 %) and resistance to arc erosion (nearly two times longer service life). In addition, during the arc erosion, attributed to the Cu-Ag solid solution effect of W@Ag@Cu/Ag-MC-ECMs and solution-strengthening effect of W@Ag@Ni/Ag-MC-ECMs, the work function increases and the arc energy decreases, which reduces mass loss and extends the service life of the contacts.

Simultaneously Enhancing the Efficiency and Stability of Perovskite Solar Cells by Using P3HT/PEDOT:PSS as a Double Hole Transport Layer.

The stability issue of perovskite solar cells (PSCs) has long been of concern to researchers. Poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is commonly used as a hole transport layer (HTL) in the inverted PSCs to achieve efficient and stable performance. However, PEDOT:PSS can corrode ITO, affecting device efficiency. Moreover, the hydrophilic nature of PEDOT:PSS compromises device stability. In this work, Poly (3-hexylthiophene-2,5-diyl) (P3HT), known for its good hydrophobicity, was used to modify the surface of PEDOT:PSS, reducing its water absorption and thereby enhancing the efficiency and stability of PSCs. The results reveal that incorporating P3HT effectively enhances the hydrophobicity of PEDOT:PSS. Furthermore, it fosters the development of large-grain perovskite film on the PEDOT:PSS/P3HT bilayer. This enhancement leads to a power conversion efficiency (PCE) of 19.78% for PSCs, with an increase by 16% than that of reference cells (17.04% of PCE). Following a duration of 1000 h, the PCE for the device modified with P3HT remains above 90%, while the PCE of the reference device is below 70%. These findings suggest that using P3HT in conjunction with PEDOT:PSS as a bilayer HTL can concurrently and proficiently improve the efficiency and stability of PSCs.

Nonhalogenated Photoactive Layer PBDB‐T:BTP‐M‐Based Organic Solar Cells with Efficient and Stable Performance

While state‐of‐the‐art organic photovoltaics (OPVs) have been achieved by halogen modification strategies for active layer materials, the stability of these OPVs can be compromised by the presence of halogen ions at the interface and within the photoactive layer. Herein, halogen‐free photoactive layer‐based OPV cells are fabricated and systematically studied to understand and explore the working principle and potential of this class of OPV devices. For the first time, a champion efficiency of 13.12% is achieved for the inverted device (ITO/AZO/AL/MoO3/Ag) based on the nonhalogenated photoactive layer PBDB‐T:BTP‐M. Superior metal electrode stability is confirmed for the unencapsulated PBDB‐T:BTP‐M devices aged at 85 °C in the air atmosphere compared to the halogenated PM6:Y6 devices. Specifically, better thermal stability is verified for the nonhalogenated device without 1‐chloronaphthalene (1‐CN) additive compared to the device with 1‐CN additive, with 89% of the initial efficiency retained after being aged for 900 h at 85 °C in the N2 atmosphere. These results evidence the halogen/halide impacts on device stability and demonstrate the potential for nonhalogenated OPVs to achieve efficient and stable performance, benefiting the development and practical application of this technology.