Among the dielectric materials of current interest the cubic ternary system Sr2(A1Ta)Q (SAT) is particularly attractive since it exhibits an excellent lattice and thermal expansion match with Y-123, Y-124, Bi2212, Bi-2223 and T1-1223 superconductors. Its low dielectric constant and low tan 5 favours its use in microwave device applications. Thin films of high To oxides deposited on SAT ceramics are chemically non-reactive at the interface between the films and the ceramic material. SAT ceramic samples were identified to have double cell cubic perovskite strucmre with lattice parameter a = 0.77805 nm and melting temperature 1900 °C [1]. Thin films of SAT and multilayers of SAT/YBCO (YBa;Cu3OT) were grown on (001) LaA103 and (001) MgO substrates by pulsed laser deposition [2]. SAT was first prepared by Brandle and Fratello [3] in a study of potential substrate materials for the growth of high temperature superconductor films. The growth of bulk single crystals has not yet been reported. In our recent work we grew single crystal fibres by a laser beam pedestal growth technique [4]. In comparison to other binary perovskite dielectrics the crystal structure of SAT is cubic. As a result, fibres having potential deleterious multiple growth orientations [1, 5, 6] are unlikely. Phase-pure Sr2(A1Ta)O6 (SAT) was prepared by the sol-gel route including Sr metal, A1 (tri-secbutoxide) and Ta(OC2H»)» as the starting organic precursors. Sol-gel processing of SAT can lead to highly phase-pm'e homogeneous powders, and these powders can offer significant advantages over conventionally processed powders. The SAT phase was formed at 1400 °C from a transparent xero-gel. Scanning electron microscope (SEM) analysis showed the particle size to be sub-micrometre -0.1/~m. Raman analysis of SAT exhibited a sharp band at 791 cm -I due to well-defined molecular vibration. Complex alkoxides were prepared by reacting Sr metal, A1 (tri-sec-butoxide) and Ta2(OC2Hs)» organic precursors. First, B-site was formed by refluxing Al(tri-sec-butoxide) and Ta(OC2H»)5 organic precursors with 2-methoxyethanol (MOE; C3H802) at 125 °C for 6 h. Finally, the Sr metal was refluxed with C3H802 and later reacted with the double alkoxide mixture of A1-Ta precursor complex sol at 125 °C for 12 h. The solution was cooled to room temperature and the pH was found to be -4.0. Later the solution was hydrolysed with H20 and C3H80 in the ratio 1:4. The solution was placed in a 60 °C oven for 4-5 h to form the gel. The schematic reaction sequence for