Sputtered Pb(Zr,Ti)O3 (PZT) thin films with various compositions were characterized. Comparing sputtered PZT films with sol-gel PZT films, it was found that the film composition can be approximately estimated from the distance of the PZT (100) lattice plane. The sputtered PZT thin films with a Ti-rich phase showed excellent ferroelectric properties. The remanent polarization density, the coercive field and the saturation voltage of 300-nm-thick PZT capacitors with Zr/Ti=35/65 were 42 µC/cm2, 46 kV/cm and 3.2 V, respectively. Those of 300-nm-thick PZT capacitors with Zr/Ti=30/70 were 42 µC/cm2, 48 kV/cm and 2.5 V, respectively. The polarization retention properties of PZT capacitors with a Ti-rich phase are outstanding, and the value of the retained polarization density after 10 years is expected to be larger than 40 µC/cm2.