This work demonstrates a laterally excited shear bulk acoustic wave resonator (XBAR) based on a 300-nm-thick ZY-cut Lithium Niobate thin film, which takes advantages of high frequency, large electromechanical coupling coefficient (kt2) and high quality factor (Q). A bi-electrode structure was proposed to weaken the effects of mechanical and electrical loading introduced by the metal electrodes, while enhancing the coupling between the electric field and stress. In addition, the electrode configurations including interdigitated electrodes (IDEs) number, metal coverage and effective electrode length were studied to eliminate spurious modes and improve resonators’ performance. The fabricated devices can achieve the resonant frequency of 5.89 GHz using the first-asymmetric (A1) mode Lamb wave in suspended LiNbO3 thin film. Combined with the high operating frequency and high kt2 characteristics of the A1 mode Lamb wave, the measured results show that the designed bi-electrode structure XBAR achieves a kt2 value of 14 % and a high Q value of 300.