Spreading Resistance Research Articles

PHENOMENON OF BACTERIAL RESISTANCE IN OIL PRODUCTION AND GATHERING SYSTEM

In this paper, the active substances of bactericides and the mechanisms of their action are considered. Information on the mechanism of bacterial adsorption to the metal surface, which forms the most corrosive form of bacterial colonies – the adhered one – is presented. Methods of biological contamination control, both physical and chemical, are also considered. The mechanism of bactericidal action of chemical compositions consisting of 3 stages (interaction with water, interaction of bactericide aqueous solutions with bacterial cell membranes, interaction of bactericide with cytoplasmic membrane) is also reviewed. The main types of bacterial resistance common in water circulation systems, reservoir pressure maintenance systems, oil production, transportation, gathering and storage systems are summarized. The mechanisms of occurrence of each type of manifestation and method of spreading resistance between colonies are considered. It is important to note that at the moment, methods to control each of the cases of resistance when using bactericides in oil production have been poorly studied, while constant and non-alternating dosing of reagents leads to bacteria mutation and a decrease in the effectiveness of bactericidal action, which, in turn, leads to significant technological problems and economic costs. Therefore, an important step in choosing bactericides, types and methods of treating an infected environment is to study bacterial resistance. The article accumulates and summarizes information on the methods currently used to prevent bacterial resistance.

An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer

This paper investigates an improved trench MOS barrier Schottky (TMBS) structure with extra double epitaxial layers (DE-TMBS) based on the conventional TMBS (C-TMBS) featuring a high-doped N-type current spreading layer (CSL) and a high-doped low resistance layer (LRL). Compared to the C-TMBS, the CSL in the improved structure is grown on the N-type drift region, and the LRL is extended on the CSL. According to the numerical simulations and analytical models, the specific on-resistance (Ron,sp) of DE-TMBS can be significantly reduced compared to the conventional one. This is primarily due to the high doping concentration in CSL, which effectively lowers both the JFET resistance and spreading resistance. Additionally, the increased doping concentration in LRL reduces the channel resistance and JFET resistance. Moreover, the doping concentration and thickness of CSL and LRL are optimized to maximize the figure of merit (FOM), that Ron,sp is reduced by 40.9 % and the FOM (BV2/Ron,sp) is improved by 67.9 % compared to the C-TMBS structure.

Genomic analysis of Salmonella Heidelberg isolated from the Brazilian poultry farms.

The rapid expansion of broiler chicken production in Brazil has presented significant sanitation challenges within the poultry industry. Among these challenges, Salmonella enterica subsp. enterica serotype Heidelberg stands as a contributor to global salmonellosis outbreaks. This study analyzed 13 draft genomes of Salmonella Heidelberg isolated from the pre-slaughter broiler chickens farms in Brazil. By conducting in silico analysis of these genomes, the study investigated genome similarity based on single nucleotide polymorphisms (SNPs) and identified genes encoding resistance to antimicrobials, sanitizers, and virulence factors. Furthermore, mobile genetic elements (MGE) were identified to assess their potential role in propagating genes through horizontal gene transfer. A risk classification was also applied based on the resistomes. The genomes revealed a high prevalence of genes conferring resistance to aminoglycosides, fosfomycin, sulfonamides, tetracycline, and genes linked to quaternary ammonium resistance. The study also uncovered six Salmonella pathogenicity islands (SPI) and over 100 genes encoding virulence factors. The association of MGE with antibiotic-resistant genes sul2 and blaCMY-2 raised concerns about the potential transfer to other bacteria, posing a substantial risk for spreading resistance mechanisms according to established risk protocols. Additionally, SNP analysis indicated close phylogenetic relationships among some isolates, suggesting a common origin. This study enhances our understanding of Salmonella Heidelberg strains by identifying key risk factors for transmission and revealing the association between resistance genes and MGEs. This insight provides a foundation for developing and implementing effective control, monitoring, and treatment strategies in the poultry industry.

Characterization of identical lithium-ion battery electrodes before and after charge/discharge cycles via in-plane large-area polishing

As an effective method to fabricate a large-area cross-sectional sample for lithium-ion battery electrodes, we perform in-plane polishing of LiNi0.8Co0.15Al0.05O2(NCA) cathode samples and obtain a large cross-sectional area with a diameter of 1.5 mm. The polished cross-sections of NCA cathode particles are sufficiently flat to perform the atomic force microscopy (AFM) measurements on each cathode particle. Following AFM-based Kelvin probe force microscopy and scanning spreading resistance microscopy measurements, an identical in-plane polished NCA sample is assembled into a coin cell for the charge and discharge processes. After 90 charge/discharge cycles, the in-plane-polished sample is successfully disassembled from the coin cell without causing critical damage. In addition, a microcrack structure, which is a typical degradation feature of the cycles of NCA particles, is observed for the identical in-plane polished NCA sample. This indicates that the in-plane polishing method is effective for investigating identical NCA electrode samples before and after the charge/discharge process. Furthermore, the in-plane polishing method can be successfully applied to the large-area polishing of a Si-based anode which is a mixture of Si carbon complexes and graphite particles. This study presents a novel methodology for analyzing the degradation of lithium-ion battery electrode materials.

Impacts of Curing-Induced Phase Segregation in Silicon Nanoparticle-Based Electrodes

We report the investigation of silicon nanoparticle composite anodes for Li-ion batteries, using a combination of two nm-scale atomic force microscopy-based techniques: scanning spreading resistance microscopy for electrical conduction mapping and contact resonance and force volume for elastic modulus mapping, along with scanning electron microscopy-based energy dispersion spectroscopy, nanoindentation, and electrochemical analysis. Thermally curing the composite anode—made of polyethylene oxide-treated Si nanoparticles, carbon black, and polyimide binder—reportedly improves the anode electrochemical performance significantly. This work demonstrates phase segregation resulting from thermal curing, where alternating bands of carbon and silicon active material are observed. This electrode morphology is retained after extensive cycling, where the electrical conduction of the carbon-rich bands remains relatively unchanged, but the mechanical modulus of the bands decreases distinctly. These electrical and mechanical factors may contribute to performance improvement, with carbon bands serving as a mechanical buffer for Si deformation and providing electrical conduction pathways. This work motivates future efforts to engineer similar morphologies for mitigating capacity loss in silicon electrodes.

Analytical Solutions for Transient Thermal Spreading Resistance of a 3-D Flux Channel

Analytical Solutions for Transient Thermal Spreading Resistance of a 3-D Flux Channel

Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes

Electron mobility along the c-axis is the most important in SiC because the current flows along this direction in vertical SiC devices. However, previous reports on the drift mobility along the c-axis are still limited because of the difficulty of sample preparation or analysis. In this study, the authors presented the method to estimate the electron drift mobility of a lightly-doped epitaxial layer by using SiC(0001) vertical Schottky barrier diodes (SBDs). For the analyses, the effects of current spreading and series resistance were carefully considered based on experimental results obtained from SBDs with various device parameters, leading to a more accurate estimation. The mobility along the c-axis was obtained as 1070 ± 290 cm2/Vs for a donor density of 1 × 1015 cm-3, and it was compared with the results by Hall effect measurement.

Topographic variation and fluid flow characteristics in rough contact interface

Understanding flow characteristics of fluid near rough contact is important for the design of fluid-based lubrication and basic of tribology physics. In this study, the spreading and seepage processes of anhydrous ethanol in the interface between glass and rough PDMS are observed by a homemade optical in-situ tester. Digital image processing technology and numerical simulation software are adapted to identify and extract the topological properties of interface and thin fluid flow characteristics. Particular attention is paid to the dynamic evolution of the contact interface morphology under different stresses, the distribution of microchannels in the interface, the spreading characteristics of the fluid in contact interface, as well as the mechanical driving mechanism. Original surface morphology and the contact stress have a significant impact on the interface topography and the distribution of interfacial microchannels, which shows that the feature lengths of the microchannels, the spreading area and the spreading rate of the fluid are inversely proportional to the load. And the flow path of the fluid in the interface is mainly divided into three stages: along the wall of the island, generating liquid bridges, and moving from the tip side to the root side in the wedge-shaped channel. The main mechanical mechanism of liquid flow in the interface is the equilibrium between the capillary force that drives the liquid spreading and viscous resistance of solid wall to liquid. In addition, the phenomenon of “trapped air” occurs during the flow process due to the irregular characteristics of the microchannel. This study lays a certain theoretical foundation for the research of microscopic flow behavior of the liquid in the rough contact interface, the friction and lubrication of the mechanical system, and the sealing mechanism.

Transmission-Blocking Strategies for Malaria Eradication: Recent Advances in Small-Molecule Drug Development.

Malaria drug research and development efforts have resurged in the last decade following the decelerating rate of mortality and malaria cases in endemic regions. The inefficiency of malaria interventions is largely driven by the spreading resistance of the Plasmodium falciparum parasite to current drug regimens and that of the malaria vector, the Anopheles mosquito, to insecticides. In response to the new eradication agenda, drugs that act by breaking the malaria transmission cycle (transmission-blocking drugs), which has been recognized as an important and additional target for intervention, are being developed. These drugs take advantage of the susceptibility of Plasmodium during population bottlenecks before transmission (gametocytes) and in the mosquito vector (gametes, zygotes, ookinetes, oocysts, sporozoites). To date, compounds targeting stage V gametocytes predominate in the chemical library of transmission-blocking drugs, and some of them have entered clinical trials. The targeting of Plasmodium mosquito stages has recently renewed interest in the development of innovative malaria control tools, which hold promise for the application of compounds effective at these stages. In this review, we highlight the major achievements and provide an update on the research of transmission-blocking drugs, with a particular focus on their chemical scaffolds, antiplasmodial activity, and transmission-blocking potential.

Thermal Spreading Resistance of Near Surface Localized Heating-Induced Size Effects in Semiconductors

Abstract Localized heating is encountered in various scenarios, including the operation of transistors, light-emitting diodes, and some thermal spectroscopy techniques. When localized heating occurs on a scale comparable to the mean free path of the dominant energy carriers, additional thermal resistance is observed due to ballistic effects. The main objective of this study is to find a relation between this resistance, problem geometry, and material thermal properties in situations involving localized heating. Models based on the solution of the Fourier heat diffusion equation and the gray phonon Boltzmann Transport Equation are solved simultaneously to calculate the additional thermal resistances that arise from localized heating. Subsequently, the results are analyzed to derive the desired relationship. It is noted that in the context of localized heating resistance, the effects of geometrical variables are non-linear and substantial, particularly when the Knudsen numbers for the boundary and heat source exceed certain thresholds. Specifically, when the Knudsen number for the heat source becomes comparable to 1 localized heating resistance is observed. However, when the Knudsen number based on heat source height and width surpasses 8 and 20, respectively the heat source behaves akin to a point source, no longer significantly affecting the localized heating resistance. At this juncture, the maximum resistance limit is reached.

Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy

Scanning spreading resistance microscopy (SSRM) measurements were performed on GaAs thick films grown by hydride vapor phase epitaxy technology under different growth conditions to evaluate their carrier concentrations. For this purpose, a calibration curve was established based on a multilayer staircase structure grown by molecular beam epitaxy. The dopant calibration range measured by secondary ion mass spectrometry is from 5 × 1016 to 1019 cm−3. An abnormal phenomenon in the calibration process was explained by taking into account the parasitic parallel resistance of the calibration samples. Finally, the calibration curve was used to quantitatively analyze the carriers inside the Zn doping p-type GaAs film from 4 × 1016 to 1018 cm−3 range. We demonstrate here the applicability of SSRM to the in-depth analysis of thick epilayers, providing new inputs for the control of thick film technologies.

Optimization of embedded cooling for hotspots based on compound plate thermal spreading model

Heat fluxes of GaN-based high electron mobility transistors (HEMTs) can reach dozens of kilowatts per square centimeter, and the heat is generated only within a small area with feature size of micrometer to millimeter length scales, which poses a huge challenge for thermal management. In this study, an embedded microfluidic cooling solution is proposed to dissipate heat from the hotspots, and thermal test vehicles are fabricated using the Micro-Electro-Mechanical System (MEMS) process. Cooling performances of hotspots with sizes ranging from 40 × 40 μm2 to 500 × 500 μm2 and varying locations are demonstrated. Thermal resistances of the test samples are analysed and the heat transfer coefficient can achieve 1.5 × 105 W/(m2∙K) using embedded microchannel cooling. We propose a compound plate spreading thermal resistance model to demonstrate the effect of the dielectric layer and the size of the heat source on heat dissipating capability of the microfluidic cooling system. Based on the thermal spreading model, when the heat source is small, integrating high thermal conductivity materials near the heat source can reduce its total thermal resistance by two orders of magnitude. By balancing the heat spreading resistance with the convective resistance of microchannel cooling, we find that ∼1 mm can be considered as the critical length for distinguishing the primary thermal management approach for different sized hotspots. This paper provides useful design guidelines for embedded microchannel cooling of devices with localized heat generation patterns, such as HEMT devices.

A new anti-CRISPR gene promotes the spread of drug-resistance plasmids in Klebsiella pneumoniae.

The Klebsiella pneumoniae (K. pneumoniae, Kp) populations carrying both resistance-encoding and virulence-encoding mobile genetic elements (MGEs) significantly threaten global health. In this study, we identified a new anti-CRISPR gene (acrIE10) on a conjugative plasmid with self-target sequence in K. pneumoniae with type I-E* CRISPR-Cas system. AcrIE10 interacts with the Cas7* subunit of K. pneumoniae I-E* CRISPR-Cas system. The crystal structure of the AcrIE10-KpCas7* complex suggests that AcrIE10 suppresses the I-E* CRISPR-Cas by binding directly to Cas7 to prevent its hexamerization, thereby preventing the surveillance complex assembly and crRNA loading. Bioinformatic and functional analyses revealed that AcrIE10 is functionally widespread across diverse species. Our study reports a novel anti-CRISPR and highlights its potential role in spreading resistance and virulence among pathogens.

Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers

Localized epitaxy of gallium nitride (GaN) on silicon (Si) wafers is an efficient way to relax elastically the tensile stress generated in the GaN layer after growth, allowing epitaxy of thick layers for the fabrication of vertical power devices operating at high voltage. In this study, a 4.7 μm‐thick GaN layer is grown by metal–organic vapor phase epitaxy on 200 mm‐diameter Si wafers for the fabrication of quasi‐vertical Schottky and p‐n diodes. The uniformity of the doping concentration in the layer is mapped spatially by scanning spreading resistance microscopy, while scanning capacitance microscopy illustrates the differently doped regions in the p‐n diode. The net doping concentration is extracted by capacitance–voltage (C–V) measurements and it is found to be about 3 × 1016 cm−3. On a 140 μm‐diameter quasi‐vertical p‐n diode, destructive breakdown occurs at 402 V, with no periphery protection on the device, demonstrating that localized epitaxy of GaN on Si has great potential for vertical high‐power devices.

Transient Thermal Spreading Resistance from Isothermal Source in a Circular Flux Tube

An analytical expression is developed for transient thermal spreading resistance from an isothermal circular source in a cylindrical flux tube as a function of constriction ratio and time. The flux tube is semi-infinite. The spreading resistance expression is obtained from the temperature expression by solving the heat equation. For short times, the dimensionless transient spreading resistance is proportional to dimensionless time based on the square root of the source area. For long times, the dimensionless spreading resistance approaches the values of the corresponding steady-state expression in the literature. For small constriction ratios, dimensionless spreading resistance approaches the classic isothermal half-space limit. A numerical analysis is presented which shows excellent agreement with the analytical solution. Approximate correlations for dimensionless resistance are also presented for both the isothermal and the isoflux cases.

Unveiling the antimalarial properties of Terminalia ivorensis (A. Chev) stem bark aqueous extract: In vivo efficacy testing and in silico predictions

Due to the spreading resistance to antimalarial drugs, new therapeutics are urgently needed, preferably with novel modes of action. Extracts from Terminalia ivorensis have previously been shown to possess activity in vitro against multidrug-resistant and drug-sensitive strains of Plasmodium falciparum. However, to the best of our knowledge, no scientific study has been published describing the antimalarial potential of these extracts through in vivo efficacy testing. This study aimed to determine the safety and antimalarial efficacy of the T. ivorensis stem bark aqueous extract (TiH2O) in a mouse model using the OECD 423 protocol and the suppressive and curative murine malaria models, and to predict in silico the pharmacokinetic properties and drug-likeness of two major phytochemical constituents. The in vivo antimalarial efficacy was assessed using the P. berghei NK65-infected mice. The TiH2O treatment impact on biochemical parameters was measured using established standard procedures. The pharmacokinetics prediction was achieved through the pkCSM predictor and Swiss ADME. The TiH2O extract was nontoxic in BALB/c mice at a lethal dose of 50 (LD50) > 2000 mg/kg. The TiH2O extract displayed strong antimalarial efficacy with 100% parasitemia suppression at 200 mg/kg b.w. after 4 days of treatment while its oral administration at 400 mg/kg b.w. in the curative model significantly decreased P. berghei parasitemia by 94.07% with a median efficacy dose (ED50) of 96.80 mg/kg. The administration of TiH2O extract restored the histological parameters disrupted by P. berghei, and the transaminase (ALT and AST) activity, creatinine, and bilirubin levels significantly decreased compared to the negative control mice. In silico explorations showed that the main constituents leucodelphidin (leucodelphinidin) and ellagic acid of the TiH2O extract have drug-like properties, thus indicating that T. ivorensis might constitute a promising source of antimalarial chemical entities with good pharmacokinetics and drug-like properties. The results obtained further corroborated the preliminary in vitro antiplasmodial studies of T. ivorensis stem bark aqueous extract. The metabolome of TiH2O extract should be further profiled in the prospects of characterizing novel natural product scaffolds to support antimalarial drug discovery.

Spreading resistance and conductance anisotropy in multilayer MoS2

The increasing interest in realizing the full potential of two-dimensional (2D) layered materials for developing electronic components strongly relies on quantitative understanding of their anisotropic electronic properties. Herein, we use conductive atomic force microscopy to study the anisotropic electrical conductance of multilayer MoS2 by measuring the spreading resistance of circular structures of different radii ranging from 150 to 400 nm. The observed inverse scaling of the spreading resistance with contact radius, with an effective resistivity of ρeff = 2.89 Ω cm, is compatible with a diffusive transport model. A successive etch of the MoS2 nanofilms was used to directly measure the out-of-plane resistivity, i.e., 29.43 ± 7.78 Ω cm. Based on the scaling theory for conduction in anisotropic materials, the model yields an in-plane resistivity of 0.28 ± 0.07 Ω cm and an anisotropy of ∼100 for the ratio between the in-plane and out-of-plane resistivities. The obtained anisotropy indicates that the probed surface area can extend up to 400 times the metal contact area, whereas the penetration depth is limited to roughly 20% of the contact radius. Hence, for contact radius less than 3 nm, the conduction will be limited to the surface. Our investigation offers important insight into the anisotropic transport behavior of MoS2, a pivotal factor enabling the design optimization of miniaturized devices based on 2D materials.

Structure and RF performance evolution of polycrystalline silicon charge capture layer for advanced RF-SOI in in-situ annealing process

In this paper, the structures and radio-frequency (RF) properties of high resistivity silicon (HR-Si) wafers with a polycrystalline silicon (Poly-Si) charge capture layer after in-situ annealing were investigated. The thermal treatment significantly improves the wafer warpage and optimize the resistivity of Poly-Si/HR-Si interfaces. By using spreading resistance profiling (SRP), energy dispersive spectrometer (EDS) and secondary ion mass spectrometry (SIMS) technology, the rise of interfacial resistivity may be as results of the pyrolysis of the native oxide and the diffusion of hydrogen atoms. The transmission Kikuchi diffraction (TKD) analysis exhibited that the grains were recrystallized during the annealing, leading to the transformation from the small angle boundaries (SAGBs) into low-Σ coincidence lattice grain boundaries (CSL GBs). The drop of the bulk resistivity of the Poly-Si layer is attributed to the reduction of the total grain boundary (GB) density and the increase of the low electro-activity GB density. Moreover, the microwave losses and non-linearity of the RF-SOI with embedded Poly-Si layer was evaluated by on-chip testing based on CPW. It was determined that the decrease in the Poly-Si resistivity only worsens the microwave losses but not the non-linearity.

Transient Thermal Spreading From a Circular Heat Source in Polygonal Flux Tubes

Abstract This study develops a numerical simulation to assess transient constriction resistance in various semi-infinite flux channel geometries, including circle on circle, triangle, square, pentagon, and hexagon, which are derived from various heat source arrangements in a large domain. Using both isothermal and isoflux circular heat sources in polygonal flux channels, and employing a finite volume method, the study evaluates transient constriction resistance. The research confirms that for different geometries, similar nondimensionalized constriction resistance results are obtained, particularly when using the square root of the source area as the characteristic length and the square root of the constriction area ratio. The study reveals that flux tube shape has a minimal impact on thermal spreading resistance, with the circle-on-triangle configuration displaying the largest deviation from a simple circle-on-circle model. These insights advance our understanding of thermal spreading resistance in polygonal flux channels and their applications in thermal engineering, especially in contact heat transfer problems.

Thermal Spreading/Constriction From an Isothermal Source Into a Multilayer Orthotropic Semi-Infinite Flux Tube

Abstract Thermal spreading and constriction have been widely studied due to relevance in heat transfer across interfaces with imperfect contact and problems such as microelectronics thermal management. Much of the past work in this field addresses an isoflux source, with relatively lesser work on the isothermal source problem, which is of much relevance to heat transfer across rough interfaces. This work presents an analytical solution for thermal spreading/constriction resistance that governs heat flow from an isothermal source into a multilayer orthotropic semi-infinite flux tube. The mixed boundary condition due to the isothermal source is accounted for by writing a convective boundary condition with an appropriately chosen spatially-varying Biot number. A series solution for the temperature field is derived, along with a set of linear algebraic equations for the series coefficients. An expression for the nondimensional thermal spreading resistance is derived for Cartesian and cylindrical problems. It is shown that, depending on the values of various nondimensional parameters, heat transfer in either the thin film or the flux tube may dominate and govern the overall thermal spreading resistance. Results for a single-layered isotropic flux tube are derived as a special case of the general result, for which, good agreement with past work is demonstrated. An easy-to-use polynomial fit for this special case is presented. This work contributes a novel technique for solving mixed boundary problems involving an isothermal source, and may also help solve practical problems related to interfacial heat transfre and thermal management.