Spray Pyrolysis Deposition Technique Research Articles

Spray pyrolysis-deposited TiO2 thin films as high-performance lithium ion battery anodes

Focusing on additive-free electrodes, thin films are of typical interest as electrodes for lithium ion battery application. Herein, we report the fabrication of TiO2 thin films by spray pyrolysis deposition technique. X-ray diffraction and transmission electron microscopic analysis confirms the formation of anatase TiO2. Electrochemical evaluation of these sub-micron TiO2 thin films exhibits high-rate performance and long cycling stability. At 1C rate (1C = 335 mA/g), the electrode delivered discharge capacity of 247 mAh/g allowing about 0.74 lithium into the structure. The electrodes also delivered specific capacities of 122 and 72 mAh/g at 10 and 30C rates, respectively. Without conductive additives, this excellent performance can be attributed to the nanosize effect of TiO2 particles combined with the uniform porous architecture of the electrode. Upon cycling at high rates (10 and 30C), the electrode exhibited excellent cycling stability and retention, specifically only < 0.6% capacity loss per cycle over 2500 cycles.

Spray pyrolysis synthesis of CuxFe1−xS2 and their structural, electronic and optical properties: Experimental and first-principles study

Iron pyrite, FeS2 (FS) and the chalcopyrite copper iron sulphide CuxFe1−xS2 (CFS) thin films were synthesized using chemical spray pyrolysis (CSP) deposition technique. The effect of different Cu concentration (1, 3, 5 and 7at.%) on growth of these films was investigated. The as-synthesized CFS thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet–visible (UV–Vis) spectroscopy. The XRD pattern of FS show a structured cubic phase with preferential orientation along (200) plane, and CFS crystallized in chalcopyrite (tetragonal) with preferential orientations along (112) plane with crystallite size 142–91Å. Optical absorption data show that the band gap of spray deposited FS and CFS films is 0.920–0.558eV and the absorption coefficients significantly modified with the increase of Cu concentration from 3.619×105cm−1 to 4.231×105cm−1. Furthermore, these results have been adopted in accordance with the first principles calculations of electronic structure.

Palladium (Pd) sensitized molybdenum trioxide (MoO3) nanobelts for nitrogen dioxide (NO2) gas detection

The MoO3 nanobelts have been grown onto the glass substrates using chemical spray pyrolysis (CSP) deposition technique at optimized substrate temperature of 400°C. XRD study shows that the film is polycrystalline in nature and possesses an orthorhombic crystal structure. The FE-SEM micrographs show the formation of nanobelts-like morphology of MoO3. The presence of Pd and its oxidation states in Pd-sensitized MoO3 film is confirmed using EDAX and XPS study, respectively. The percentage gas response is defined as |Rg-Ra|Ra×100% where, Ra and Rg are the film resistances in presence of air and analyte gas, respectively. Before Pd sensitization, MoO3 nanobelts show NO2 gas response of 68% for 100ppm concentration at operating temperature of 200°C with response and recovery times of 15s and 150s, respectively. Selectivity coefficient study shows that the Pd-sensitized MoO3 nanobelts are more sensitive and selective towards NO2 gas among various gases such as NH3, H2S, CO, CO2 and SO2. The Pd-sensitized MoO3 nanobelts shows the enhanced response of 95.3% towards 100ppm NO2 gas concentration with response and recovery times of 74s and 297s, respectively. The lower detection limit is found to be 5ppm which is four times less than immediately dangerous to life or health (IDLH) value of 20ppm. Finally, the proposed NO2 gas sensing mechanism based on chemisorption model is discussed.

Fabrication of robust TiO2 thin films by atomized spray pyrolysis deposition for photoelectrochemical water oxidation

Photoelectrodes are highly essential for the photoelectrochemical water splitting process and development of novel fabrication techniques is vital for further enhancement of activity. In this study, we successfully fabricated highly active TiO2 thin films by using novel atomized spray pyrolysis deposition (ASPD) technique. The ASPD technique utilizes a unique atomization process to produce highly fine aerosols which resulted in a highly crystalline TiO2 nanostructure. The deposition process was optimized by controlling deposition temperatures and precursor amounts. XRD and SEM studies confirmed the formation of anatase TiO2 phase and a highly interconnected nano-flakes on FTO substrate at 550°C. The photoelectrochemical activity of the optimized thin films showed a photocurrent density of ∼5mAcm−2 at 1.0V (vs. Ag/AgCl) in 0.1M Na2SO4 (aq) under 375nm (150mWcm−2) illumination. This photocurrent was much higher than the two other anatases TiO2 thin films fabricated by conventional spray pyrolysis deposition (SPD) using the same precursor and anatase TiO2 powder (particle size ∼21nm). Transient IR absorption study revealed that the SPD powder based thin films have deeply trapped electrons, whereas ASPD thin films consisted with only free and/or shallowly trapped electrons. Higher crystallinity and enhanced electron conductivity of the TiO2 thin films fabricated by ASPD are responsible for this stable and high photoelectrochemical activity.

Effect of electron beam on structural, linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8MeV electron beam at different dose rate ranging from 1kGy to 4kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.

Structural and Optical Studies of Molarity Based ZnO Thin Films

Zinc Oxide thin films were prepared for different precursor solution molarities from 0.025M to 0.1M by spray pyrolysis deposition technique. A comprehensive study was carried out to realize the effect of concentration of precursor on ZnO thin films. The optimized temperature of the glass substrate was 300°C. From the XRD data it is inferred that the films are polycrystalline and hexagonal wurtzite structure . The degree of preferred orientation were along diffraction planes (100), (002) and (101) for all the ZnO films. The intensity of the diffraction peak prepared with 0.1M concentration is higher than those prepared at lower concentrations. The grain size (D) was calculated using Debye-Scherrer formula. It was found that the average grain size increases, when the molar concentration increases. As the solution concentration increases, the band gap decreases. The films are transparent in the visible region (85%), and the transmittance decreases as the molar concentration increases, which is caused by optical scattering at grain boundaries.

Tuning the third-order nonlinear optical properties of In:ZnO thin films by 8 MeV electron beam irradiation

We report the third-order nonlinear optical properties of electron beam treated Indium doped ZnO (Zn1-xInxO (x = 0.03) thin films at different dose rate. Zn1-xInxO (x = 0.03) thin films prepared by spray pyrolysis deposition technique were irradiated using 8 MeV electron beam at dose rates ranging from 1 kGy to 4 kGy. X-ray diffraction patterns were obtained to examine the structural changes, The transformation from sphalerite to wurtzite structure of ZnO was observed which indicates occurrence of structural changes due to irradiation. Morphology of irradiated thin films examined using atomic force microscopy (AFM) technique indicates the surface roughness varying with irradiation dose rate. The switching over from Saturable Absorption (SA) to Reverse Saturable Absorption (RSA) behaviour was noted when the irradiation dose rate was increased from 1 kGy to 4 kGy. The significant changes observed in the third-order nonlinear optical susceptibility χ(3) of the Zn1-xInxO (x = 0.03) thin films is attributed mainly due to electron beam irradiation. The study indicates that nonlinear optical parameters can be controlled by electron beam irradiation by choosing appropriate dose rate which is very much essential for device applications. Hence Zn1-xInxO (x = 0.03) materialize as a promising material for use in nonlinear optical device applications.

Investigations on nonlinear optical properties of electron beam treated Gd:ZnO thin films for photonic device applications

In this article, we report the third-order nonlinear optical properties of electron beam irradiated gadolinium-doped zinc oxide (GZO) thin films prepared using the spray pyrolysis deposition technique. GZO thin films were treated with an electron beam from a variable energy microtron accelerator at dose rates ranging from 1–5 kGy. Nonlinear optical measurements were conducted by employing the single beam Z-scan technique. A continuous wave He–Ne laser operating at 633 nm was used as the source of excitation. Closed aperture Z-scan results reveal that the films exhibit self-defocusing nonlinearity. Open aperture Z-scan results exhibit a switching over phenomena of reverse saturable absorption to saturable absorption for thin film irradiated at 3 kGy, indicating the influence of electron beams on optical nonlinearity. The significant change in third-order nonlinear optical susceptibility χ(3) ranging from 2.14 × 10−3 to 3.12 × 10−3 esu is attributed to the effect of electron beam irradiation. The study shows that the nonlinear coefficients of GZO films can be tuned by electron beams for use in nonlinear optical device applications.

Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain–source current density (IDS,max) of 725 (530) mA/mm, IDS at VGS = 0 V (IDSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BVGD) of −182 (−121) V, turn-on voltage (Von) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BVDS) of 174 (103) V, on/off current ratio (Ion/Ioff) of 5.6 × 107 (3.7 × 103), unity-gain cut-off frequency (fT) of 10.3 (6.8) GHz, maximum oscillation frequency (fmax) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.

Effect of deposition time on structural and physical properties of Cu2CdSnS4 thin films prepared by spray pyrolysis technique: experimental and ab initio study

Cu2CdSnS4 (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu2CdSnS4 thin films were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, Raman spectroscopy and Hall Effect measurements. The XRD pattern of Cu2CdSnS4 structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm−1. The films have the direct optical band gaps of 1.39–1.5 eV. The optimum hole mobility was found to be 3.212 × 101 cm2 v−1 s−1 for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu2CdSnS4 were obtained by ab initio calculations using the Korringa–Kohn–Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.

Growth of spray pyrolysis deposited copper oxide thin film

Copper oxide thin film is deposited on the glass slide using aqueous solution of copper chloride and hydrogen peroxide by using spray pyrolysis deposition technique. The deposited CuO thin film is adherence and homogeneity with high transparency in visible region. Investigation of CuO thin film for physical properties is done. By using UV –Visible Spectrophotometer optical properties like absorption, transmission, energy band gap, Absorption coefficient and extinction coefficient in the visible region (380 – 1000 nm) are studied. The X-ray diffraction of CuO thin film is polycrystalline in nature with monoclinic crystal structure. The resistivity of Cuo thin film is studied using four probe methods.

Deposition, characterization, magnetic and optical properties of Zn doped CuFe2O4 thin films

Nanocrystalline Zn doped Cu spinel ferrite thin films having compositional formula Cu1−xZnxFe2O4 (where x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0) were deposited on glass substrate by spray pyrolysis deposition technique using nitrates of copper, zinc and ferric metals as raw materials. The deposited thin films were characterized by X-ray diffraction, infrared, field emission scanning electron microscope, energy dispersive spectra, atomic force microscope, vibrating sample magnetometer and ultra violet visible spectroscopy at room temperature. X-ray diffraction studies revealed the formation of single phase cubic spinel structure of CuZn spinel ferrite thin films. The crystallite size was determined using Debye-Scherrer's formula and found in the range of 9–20 nm. The thickness of the deposited thin films measured by spectroscopy reflectometer was found in the range of 267–247 nm. The surface morphology of the prepared thin films studied by FESEM technique exhibits the dense structure. The analysis of AFM images showed the columnar structure of the deposited thin films. The magnetic measurements showed the soft ferromagnetic behaviour except for x = 1.0; for this it shows anti-ferromagnetic behaviour. The magnetic parameters like saturation magnetization, remenance magnetization, coercivity, initial permeability and magnetic domain size were obtained from the M − H loops. The value of saturation magnetization of thin film samples increases with zinc up to x = 0.6 and decreases for further x values. The optical properties as a function of Zn content ‘x’ were investigated in order to get the both direct and indirect band gaps of thin films. The values of direct and indirect band gap increased with zinc content x except for x = 0.8 and varies from 2.04 to 2.26eV and 1.74–1.96eV respectively.

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He–Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10−5 esu to 1.39 × 10−3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Characterization of cadmium sulphide (CdS) thin film deposited by spray pyrolysis technique

Cadmium sulphide thin film is deposited on the glass slide using aqueous solution of cadmium chloride and thiourea by using spray pyrolysis deposition technique at temperature of 4000C. Structural, optical and electrical properties of deposited CdS thin film are investigated. Optical studied of CdS thin film is characterized by using UV –Visible Spectrophotometer in the visible region (380 – 1000 nm). The energy Band gap of CdS thin film is obtained in the present work at 2.3 eV. Thickness of CdS thin film is determined by using weight difference density method. Absorption coefficient and extinction coefficient of CdS thin film are studied in the present work. Structural characterization of CdS thin is done by using X-Ray diffractometer. XRD Pattern analysis showed that the CdS thin film is mixed phases of cubic and hexagonal structure. Using four probe methods the electrical resistivity and electrical conductivity of CdS thin film are studied.

Highly selective and sensitive response of 30.5 % of sprayed molybdenum trioxide (MoO3) nanobelts for nitrogen dioxide (NO2) gas detection

The molybdenum trioxide (MoO3) thin films have been successfully deposited onto the glass substrates using chemical spray pyrolysis (CSP) deposition technique at various substrate temperatures ranging from 300°C to 450°C with an interval of 50°C. The effect of substrate temperature on the structural, morphological, optical and gas sensing properties of MoO3 thin films has been thoroughly investigated. X-ray diffraction analysis reveals that all the films have an orthorhombic crystal structure and are polycrystalline in nature. FE-SEM micrographs depict the formation of nanobelts-like morphology. AFM study reveals that the RMS surface roughness of MoO3 thin films increases from 8.6nm to 12nm with increase in substrate temperature from 300°C to 400°C and then decreases to 11.5nm for substrate temperature of 450°C. Optical results show that the band gap of MoO3 thin films decreases from 3.92eV to 3.44eV. The selectivity studies show that the gas response of various gases varies as NH3<SO2<CO2<CO<H2S<NO2. Moreover, typical MoO3 film deposited at substrate temperature of 400°C is highly selective and sensitive for detection of NO2 gas in comparison with other gases. The maximum response of 30.5 % is obtained towards 100ppm NO2 gas concentration at an operating temperature of 200°C with response and recovery times of 20s and 160s, respectively. Finally, NO2 gas sensing mechanism model based on the chemisorption process is discussed.

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

This work investigates GaN/Al0.24Ga0.76N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (IDS, max) of 681 (500) mA/mm at VGS = 4 (2) V, IDS at VGS = 0 V (IDSS0) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BVGD) of −123 (−104) V, turn-on voltage (Von) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BVDS) of 119 (96) V, and on/off current ratio (Ion/Ioff) of 2.5 × 108 (1.2 × 103) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design.

Copper doped nickel ferrite nano-crystalline thin films: A potential gas sensor towards reducing gases

NiFe2O4 and (1 wt% and 3 wt%) Cu:NiFe2O4 thin films have been fabricated using spray pyrolysis deposition technique at 350 °C and then sintered at 650 °C for 3 h. X-ray diffraction, SEM, EDAX, UV-VIS spectroscopy, SQUID VSM were carried out to investigate phase formation, microstructural and influence of Cu doping on magnetic properties of NiFe2O4 thin films. The gas response towards various gases viz. ethanol, Liquid Petroleum Gas (LPG), methanol and hydrogen sulfide (H2S) is investigated. The results of XRD revealed that all samples had shown the principal phase of nickel ferrite and the lattice parameter was found to vary from 8.294 Å to 8.314 Å on an incorporation of Cu, and the crystalline sizes were about 40–45 nm. The effect of Cu concentration on saturation magnetization and coercive force were studied. The maximum value of saturation magnetization calculated from hysteresis loop was 89.16 emu/g at room temperature and 96.88 emu/g at 50 K. Cu content on the film surface was found to be maximum for 1 wt% Cu:NiFe2O4 thin film and this film showed an improved response towards all gases. Response of ethanol for NiFe2O4 thin film was found to be higher as compared to all the other gases. The lowering of the optimum operating temperature is observed in 1 wt% Cu:NiFe2O4 thin film with higher selectivity towards ethanol than other gases. All results indicated that the Cu doping in nickel ferrite thin films has a significant influence on the properties.

Ti0.5Al0.5O-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition

This work investigates a Ti0.5Al0.5O-dielectric Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) grown on a Si substrate, prepared by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. High dielectric constant (k) was characterized to be 29.1 for a 20-nm thick Ti0.5Al0.5O. Hooge coefficient (αH), low-frequency noise spectra (1/f), high/low frequency capacitance-voltage (C-V), pulse I-V measurements were also performed to investigate the improved passivation and insulation of the MOS-structure. The present MOS-HFET design has exhibited superior improvements of 23% in maximum drain-source current density (IDS, max), 25.1% in drain-source saturation current density at VGS = 0 V (IDSS0), 46.3% in two-terminal off-state gate-drain breakdown voltage (BVGD), and 65% in three-terminal drain-source breakdown voltage (BVDS), as compared to a reference Schottky-gate HFET device. Enhanced high-frequency, power, and high-temperature performances up to 450 K are also studied.

Nanostructured ZrO&lt;sub&gt;2&lt;/sub&gt; Thin Films Deposited by Spray Pyrolysis Techniques for Ammonia Gas Sensing Application

The spray pyrolysis deposition technique has number of advantages to produce advance nanostructured oxide films. The film surface morphology and structure depends on the precursor and doping solution and solvents used with their optimized parameters. The surface to volume ratio is achieved is beneficial to gas sensing. Therefore in this paper we report the nanostructured ZrO2 thin films was prepared using spray pyrolysis technique for ammonia gas sensing. There is various precursors such as Zirconium acetylacetonate, Zirconium nitrate, Zirconium tetra chloride etc. In spite of them, the Zirconium oxychloride octohydrate (0.05 M) was chosen as precursor solution and was prepared by dissolving in pure distilled water (Solvent). The films were deposited on heated glass substrate at 350◦C and were annealed at 500◦C for 1 hrs. It was characterized using XRD, FESEM, and TEM technique to examine crystal structure, surface morphology and microstructure properties. The average crystallite and grain size observed to be nanostructured in nature. The different test target gas performances were tested with various concentrations at different operating temperature. The films sprayed for 20 min with optimized spray parameter were observed to be most sensitive (S=58.5) to NH3 for 500 ppm at 150°C. The film thickness dependence parameters: FWHM (0.02678 radians) for peak 111, Inter-planer distance (d=0.2958 nm), lattice parameters Inter-atomic spacing ( a=0.511 nm), atomic volume(a3= 133Å3 ),micro strain (2.8 to 0.76 x 10-2), crystallite size (4-5nm) average grain size (32nm), dislocation density (1.73 x1015 lines/cm2), texture coefficient (&gt;1), specific surface area(31 m2/g), activation energy and band gap were studied. The sensor shows quick response (4 s) and fast recovery (10 s). Reported results are discussed and interpreted

Nanostructured ZrO&lt;sub&gt;2&lt;/sub&gt; Thin Films Deposited by Spray Pyrolysis Techniques for Ammonia Gas Sensing Application

The spray pyrolysis deposition technique has number of advantages to produce advance nanostructured oxide films. The film surface morphology and structure depends on the precursor and doping solution and solvents used with their optimized parameters. The surface to volume ratio is achieved is beneficial to gas sensing. Therefore in this paper we report the nanostructured ZrO2 thin films was prepared using spray pyrolysis technique for ammonia gas sensing. There is various precursors such as Zirconium acetylacetonate, Zirconium nitrate, Zirconium tetra chloride etc. In spite of them, the Zirconium oxychloride octohydrate (0.05 M) was chosen as precursor solution and was prepared by dissolving in pure distilled water (Solvent). The films were deposited on heated glass substrate at 350◦C and were annealed at 500◦C for 1 hrs. It was characterized using XRD, FESEM, and TEM technique to examine crystal structure, surface morphology and microstructure properties. The average crystallite and grain size observed to be nanostructured in nature. The different test target gas performances were tested with various concentrations at different operating temperature. The films sprayed for 20 min with optimized spray parameter were observed to be most sensitive (S=58.5) to NH3 for 500 ppm at 150°C. The film thickness dependence parameters: FWHM (0.02678 radians) for peak 111, Inter-planer distance (d=0.2958 nm), lattice parameters Inter-atomic spacing ( a=0.511 nm), atomic volume(a3= 133Å3 ),micro strain (2.8 to 0.76 x 10-2), crystallite size (4-5nm) average grain size (32nm), dislocation density (1.73 x1015 lines/cm2), texture coefficient (&gt;1), specific surface area(31 m2/g), activation energy and band gap were studied. The sensor shows quick response (4 s) and fast recovery (10 s). Reported results are discussed and interpreted