Spintronic Effects Research Articles

The role of interfacial Dzyaloshinskii–Moriya interaction in different heavy metal-based perpendicular magnetic systems and its application in spintronic devices

The interfacial Dzyaloshinskii–Moriya interaction (DMI) acting as an essential source to stabilize spin textures in ferromagnetic ultrathin films has revealed its significant role in spin–orbit torque (SOT)-driven magnetic switching. Based on a convincing homochiral Néel domain wall model, the in-plane (IP) magnetic field associated with the DMI effect has been confirmed as an essential prerequisite for deterministic SOT-driven switching. Although the presence of the IP field is required, the impact of IP field magnitude combined with the DMI effect on SOT-driven switching in different heavy metals (HMs) has never been considered together. In this research, SOT-induced switching under various IP fields in Pt, W, or Ta/CoFeB/MgO systems has been studied. The results show that the critical threshold current IC is almost independent of the IP field in the Pt-based structure; however, it significantly decreases with an increase in the IP field in the W- and Ta-based systems. Combining the derived DMI field and the magnetic domain nucleation, it is concluded that the significant difference in DMI fields and the domains' nucleating positions are the main reasons for the above phenomenon. Exploiting the distinct dependent properties of IC on the IP field, a six resistance state multilevel storage and five programmable spin logic gates are proposed and realized. This study provides insight into the special ability of the SOT effect modulated by the DMI, and also expands an effective way to construct spin-based devices based on this unique spintronic effect.

Efficient Magnon Injection and Detection via the Orbital Rashba-Edelstein Effect.

Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here, we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuO_{x} electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba-Edelstein effect efficiencies.

Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI2 Layers.

Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.

Nonreciprocal superconducting transport and the spin Hall effect in gyrotropic structures

The search for superconducting systems exhibiting nonreciprocal transport and, specifically, the diode effect, has proliferated in recent years. This trend has encompassed a wide variety of systems, including planar hybrid structures, asymmetric SQUIDs, and certain noncentrosymmetric superconductors. A common feature of such systems is a gyrotropic symmetry, realized on different scales and characterized by a polar vector. Alongside time-reversal symmetry breaking, the presence of a polar axis allows for magnetoelectric effects, which, when combined with proximity-induced superconductivity, results in spontaneous non-dissipative currents that underpin the superconducting diode effect. With this symmetry established, we present a comprehensive theoretical study of transport in a lateral Josephson junction composed of a normal metal supporting the spin Hall effect, and attached to a ferromagnetic insulator. Due to the presence of the latter, magnetoelectric effects arise without requiring external magnetic fields. We determine the dependence of the anomalous currents on the spin relaxation length and the transport parameters commonly used in spintronics to characterize the interface between the metal and the ferromagnetic insulator. Therefore, our theory naturally unifies nonreciprocal transport in superconducting systems with classical spintronic effects, such as the spin Hall effect, spin galvanic effect, and spin Hall magnetoresistance. We propose an experiment involving measurements of magnetoresistance in the normal state and nonreciprocal transport in the superconducting state. Such experiment would, on the one hand, allow for determining the parameters of the model and thus verifying with a greater precision the theories of magnetoelectric effects in normal systems. On the other hand, it would contribute to a deeper understanding of the underlying microscopic origins that determine these parameters.

Electrical manipulation of dissipation in microwave photon–magnon hybrid system through the spin Hall effect

Hybrid dynamic systems combine advantages from different subsystems for realizing information processing tasks in both classical and quantum domains. However, the lack of controlling knobs in tuning system parameters becomes a severe challenge in developing scalable, versatile hybrid systems for useful applications. Here, we report an on-chip microwave photon–magnon hybrid system where the dissipation rates and the coupling cooperativity can be electrically influenced by the spin Hall effect. Through magnon–photon coupling, the linewidths of the resonator photon mode and the hybridized magnon polariton modes are effectively changed by the spin injection into the magnetic wires from an applied direct current, which exhibit different trends in samples with low and high coupling strengths. Moreover, the linewidth modification by the spin Hall effect shows strong dependence on the detuning of the two subsystems, in contrast to the classical behavior of a standalone magnonic device. Our results point to a direction of realizing tunable, on-chip, scalable magnon-based hybrid dynamic systems, where spintronic effects provide useful control mechanisms.

Review on spin-split antiferromagnetic spintronics

Spin splitting plays a pivotal role in most modern spintronic effects. Conventionally, spin splitting accompanied by macroscopic magnetic moments has been typically discussed in the context of ferromagnets. Nevertheless, the amalgamation of spin splitting and antiferromagnets has led to a range of intriguing magnetoelectronic effects in the field of antiferromagnetic spintronics. Considering this perspective, this Letter focuses on exploring the emerging area of spin-split antiferromagnetic spintronics. It begins with a brief overview of the historical development of the anomalous Hall effect. Subsequently, recent studies on the spin-splitting-related anomalous Hall effects in antiferromagnets are elaborated upon. Finally, a summary is provided outlining the occurrence of spin splitting in different types of antiferromagnets, including noncollinear antiferromagnets and collinear altermagnets. Additionally, the associated magnetoelectronic effects are discussed.

Ultrafast terahertz spin and orbital transport in magnetic/nonmagnetic multilayer heterostructures and a perspective

Ultrafast optically excited ferromagnetic (FM)/nonmagnetic (NM) multilayer heterostructures have been demonstrated recently as efficient, high-power, and broadband sources of terahertz (THz) electromagnetic radiation. Since these spintronic THz emitters exploit the conversion from ultrafast spin to charge current, either in bulk or at the interface, the THz pulses inhere all the characteristics of the involved mechanisms and dynamics associated with spin-charge interconversion processes. Deconvolving the same requires meticulous and careful experimentation and analysis. In this article, we review the current state-of-the-art in this field and provide a perspective on the emerging phenomena, which are prospering as new research avenues and demonstrate application potential for futuristic THz technologies. In the process of developing efficient spintronic THz emitters by optimizing various conditions including those with material parameters and excitation light, it turns out that THz emission spectroscopy itself can be a unique experimental tool for probing microscopic dynamical magnetic and spintronic effects, induced by femtosecond laser pulse excitation, in a noncontact and noninvasive manner. Several breakthroughs can be listed from the literature in this regard from the last decade. Just recently, ultrafast orbitronics is another dimension that is taking shape and will impact the field immensely. A fair account to this topic is also presented in the article.

High-harmonic generation in spin and charge current pumping at ferromagnetic or antiferromagnetic resonance in the presence of spin–orbit coupling

One of the cornerstone effects in spintronics is spin pumping by dynamical magnetization that is steadily precessing (around, for example, the z-axis) with frequency ω 0 due to absorption of low-power microwaves of frequency ω 0 under the resonance conditions and in the absence of any applied bias voltage. The two-decades-old ‘standard model’ of this effect, based on the scattering theory of adiabatic quantum pumping, predicts that component of spin current vector is time-independent while and oscillate harmonically in time with a single frequency ω 0 whereas pumped charge current is zero in the same adiabatic limit. Here we employ more general approaches than the ‘standard model’, namely the time-dependent nonequilibrium Green’s function (NEGF) and the Floquet NEGF, to predict unforeseen features of spin pumping: namely precessing localized magnetic moments within a ferromagnetic metal (FM) or antiferromagnetic metal (AFM), whose conduction electrons are exposed to spin–orbit coupling (SOC) of either intrinsic or proximity origin, will pump both spin and charge I(t) currents. All four of these functions harmonically oscillate in time at both even and odd integer multiples of the driving frequency ω 0. The cutoff order of such high harmonics increases with SOC strength, reaching in the one-dimensional FM or AFM models chosen for demonstration. A higher cutoff can be achieved in realistic two-dimensional (2D) FM models defined on a honeycomb lattice, and we provide a prescription of how to realize them using 2D magnets and their heterostructures.

Electrically controllable spin polarization in collinear antiferromagnetic junctions

Antiferromagnetic spintronics is a rapidly growing subfield of spintronics in condensed-matter physics and information technology. Electrical current in collinear antiferromagnetic materials is typically spin unpolarized, limiting the realization of antiferromagnetic spintronics effects. Here we study the transport in the collinear antiferromagnetic junctions by applying a transverse electric field E y to the antiferromagnets (AFs). The band structures of the collinear AFs may become spin-polarized when the combined time reversal and lattice translation symmetry is broken by E y . The separation between spin-up and spin-down bands is controlled by E y . Full spin polarization originating from spin-polarized states near the band gap’s edges is observed at high exchange energy. In particular, as E y increases, the region capable of generating high spin polarization broadens due to the increased separation between spin-up and spin-down bands. The amplitude and sign of spin polarization can be controlled by E y . These characteristics indicate that collinear AF materials are ideal for future spintronics applications.

Spin-valley coupling and spin-relaxation anisotropy in all-CVD Graphene- MoS2 van der Waals heterostructure

Two-dimensional (2D) van der Waals (vdW) heterostructures fabricated by combining 2D materials with unique properties into one ultimate unit can offer a plethora of fundamental phenomena and practical applications. Recently, proximity-induced quantum and spintronic effects have been realized in heterostructures of graphene (Gr) with 2D semiconductors and their twisted systems. However, these studies are so far limited to exfoliated flake-based devices, limiting their potential for scalable practical applications. Here, we report spin-valley coupling and spin-relaxation anisotropy in Gr-${\mathrm{MoS}}_{2}$ heterostructure devices prepared from scalable chemical vapor-deposited (CVD) 2D materials. Spin precession and dynamics measurements reveal an enhanced spin-orbit coupling strength in the Gr-${\mathrm{MoS}}_{2}$ heterostructure in comparison with pristine Gr at room temperature. Consequently, large spin-relaxation anisotropy is observed in the heterostructure, providing a method for spin filtering due to spin-valley coupling. These findings open a scalable platform for all-CVD 2D vdW heterostructures design and their device applications.

Chiral-induced spin selectivity in biomolecules, hybrid organic-inorganic perovskites and inorganic materials: a comprehensive review on recent progress.

The two spin states of electrons are degenerate in nonmagnetic materials. The chiral-induced spin selectivity (CISS) effect provides a new strategy for manipulating electron's spin and a deeper understanding of spin selective processes in organisms. Here, we summarize the important discoveries and recent experiments performed during the development of the CISS effect, analyze the spin polarized transport in various types of materials and discuss the mechanisms, theoretical calculations, experimental techniques and biological significance of the CISS effect. The first part of this review concisely presents a general overview of the discoveries and importance of the CISS effect, laws and underlying mechanisms of which are discussed in the next section, where several classical experimental methods for detecting the CISS effect are also introduced. Based on the organic and inorganic properties of materials, the CISS effect of organic biomolecules, hybrid organic-inorganic perovskites and inorganic materials are reviewed in the third, fourth and fifth sections, especially the chiral transfer mechanism of hybrid materials and the relationship between the CISS effect and life science. In addition, conclusions and prospective future of the CISS effect are outlined at the end, where the development and applications of the CISS effect in spintronics are directly described, which is helpful for designing promising chiral spintronic devices and understanding the natural status of chirality from a new perspective.

Effect of antiferromagnetic order on a propagating single-cycle THz pulse

Employing polarization sensitive terahertz (THz) transmission spectroscopy, we explored how the waveform of initially single-cycle linearly polarized THz pulses changes upon propagation through a thick antiferromagnetic crystal of CoF2. The changes upon propagation through CoF2 are found to depend strongly on both the incoming polarization and temperature. In particular, the ellipticity and polarization rotation acquired by initially linearly polarized light are quantified and explained in terms of magnetic linear birefringence and dichroism. Although the magneto-optical effects are often considered to be relatively weak, our experiments reveal that the polarization of the THz pulse substantially changes along the pulse duration. The pulse shape is further complicated by features assigned to the formation of magnon-polaritons. The findings clearly show the importance of accounting for propagation effects in antiferromagnetic spintronics and magnonics.

Local thermoelectric response from a single Néel domain wall.

Spatially resolved thermoelectric detection of magnetic systems provides a unique platform for the investigation of spintronic and spin caloritronic effects. Hitherto, these investigations have been resolution-limited, confining analysis of the thermoelectric response to regions where the magnetization is uniform or collinear at length scales comparable to the domain size. Here, we investigate the thermoelectric response from a single trapped domain wall using a heated scanning probe. Following this approach, we unambiguously resolve the domain wall due to its local thermoelectric response. Combining analytical and thermal micromagnetic modeling, we conclude that the measured thermoelectric signature is unique to that of a domain wall with a Néel-like character. Our approach is highly sensitive to the plane of domain wall rotation, which permits the distinct identification of Bloch or Néel walls at the nanoscale and could pave the way for the identification and characterization of a range of noncollinear spin textures through their thermoelectric signatures.

Introduction to nuclear spin waves in ferro- and antiferromagnets

Collective nuclear spin excitations, called nuclear spin waves or magnons, are enabled in strongly magnetic materials by the hyperfine coupling of the nuclear and electronic spins in an atom and the exchange interaction between electronic spins of neighboring atoms. Nuclear spin waves attracted the interest of theoretical and experimental researchers worldwide about four to five decades ago and then waned. Very recently, two experimental reports of nuclear spintronic effects in the canted antiferromagnet MnCO3 have shown that spin currents can be generated using nuclear spin states, bridging two quite separate worlds, one of nuclear spin excitations and the other of spintronics. In this Tutorial, we briefly review the basic concepts and properties of nuclear spin waves in ferro- and antiferromagnetic (AF) materials and present a few significant experimental results obtained some time ago with the uniaxial anisotropy AF MnF2 and the cubic anisotropy AF RbMnF3 and compare them with theory. We also briefly present the recent experimental observations of the nuclear spin pumping effect and the nuclear spin Seebeck effect in the canted antiferromagnet MnCO3. Other possible AF candidates for studies of nuclear spintronic effects are discussed.

Integrating ferromagnetism and ferroelectricity in an iron chalcogenide monolayer: a first-principles study.

Two-dimensional (2D) ferro-type materials have received great attention owing to the remarkable polarization effect in optoelectronics and spintronics. Using the first-principles method, the coupling between ferromagnetism and ferroelectricity is investigated in a multiferroic Janus 1T-FeSSe monolayer, which has a strong Stoner ferromagnetic ground state. The magnetic anisotropy energy (MAE) is apparently impacted by the out-of-plane asymmetry donated ferroelectricity, which is reflected by the asymmetry of the Z-MAE image. The easy magnetization axis of Janus FeSSe is the +y axis with a large MAE of 0.59 meV, rooting in unpaired d electrons of Fe atoms. The transformation of band splitting and Fermi surface can be effectively engineered by different magnetic polarization directions. The ferromagnetic (FM) coupling of the FeSSe monolayer is very robust under external strain within the range of -6% to 6%, while the strength of magnetic moment of Fe atoms and polarization are easily strain-engineered, the intrinsic mechanism of which can be elaborated by the GKA rules that depend on angles and distances. This multiferroic FeSSe monolayer provides a new platform for exploring the coupling of 2D ferromagnetism and ferroelectricity and designing low-dimensional multiferroic electronics.

Optical Transitions and Magnetism in Mn-Implanted Gallium Nitride for Three-Level Magnetooptic Devices

A method of preparing passive materials suitable for magnetooptic interactions is shown using manganese implantation into gallium nitride (GaN) epitaxial layers, which establishes both dilute ferromagnetism and a three-level optical system with persistence to over 300 K. A sweep of thermal anneal parameters for a high implant dose into Mg-doped p-type GaN films is presented, and the materials are tested for both their magnetization and photoluminescence (PL). The optimal anneal process at 825 °C for 5 min maintains ferromagnetism with $T_{C}$ > 305 K, confirming magnetic alignment at room temperature with a coercivity of ~100 Oe. PL and spectrophotometry of the optimally prepared materials show the effects of the mid-gap defect state on the material's optical characteristics. The anneal process returns the real part index to its baseline dispersion while retaining an onset of absorption starting at the defect level $E_{A}$ = 1.8 eV, signifying a stable mid-gap energy transition with a measured state lifetime of $τ _{PL}$ = 2.7 ns. The scalability of this process for producing three-level transition magnetic materials suggests passive optical or magnetooptic devices can be constructed that interconnect photonic and spintronic effects for emerging system designs and potential applications in quantum information.

Disorder-driven ferromagnetic insulator phase in manganite heterostructures

Ferromagnetic insulator plays a pivotal role in various emerging spintronic effects and can be integrated as an essential component into future spintronic devices. However, ferromagnetic insulating perovskite oxides are rather scarce due to the strong coupling between ferromagnetism and metallicity via double exchange and superexchange mechanisms, severely restricting the development for oxide-based spintronic devices. Here, the disorder of manganite La2/3Sr1/3MnO3 (LSMO) films grown on MgAl2O4 substrates is utilized to decouple ferromagnetism and metallicity, thereby inducing a ferromagnetic insulating state over a rather broad temperature and thickness range. These films are non-crystalline with enormous disorder. The films with thicknesses less than 16 nm are in completely insulating state, and the films with thicknesses larger than 16 nm are in essentially insulating state with high resistivity. This insulating state is ascribed to the disorder in LSMO films and can be fitted by a localization model. In contrast, all LSMO films exhibit ferromagnetic transitions with considerable saturated magnetic moments and the Curie temperatures near room temperature, leading to the ferromagnetic insulator phase in our manganite heterostructures over a large temperature and thickness interval. Our results broaden the mind for inducing new ferromagnetic insulating state for potential applications in spintronic devices.

In-plane magnetic structure and exchange interactions in the high-temperature antiferromagnet Cr2Al

The ordered tetragonal intermetallic Cr$_2$Al forms the same structure type as Mn$_2$Au, and the latter has been heavily investigated for its potential in antiferromagnetic spintronics due to its degenerate in-plane N\'{e}el vector. We present the single crystal flux growth of Cr$_2$Al and orientation-dependent magnetic properties. Powder neutron diffraction of Cr$_2$Al and first-principles simulations reveal that the magnetic ordering is likely in-plane and therefore identical to Mn$_2$Au, providing a second material candidate in the MoSi$_2$ structure type to evaluate the fundamental interactions that govern spintronic effects. The single ordering transition seen in thermal analysis and resistivity indicates that no canting of the moments along the $c$ axis is likely. Magnetometry, resistivity, and differential scanning calorimetry measurements confirm the N\'{e}el temperature to be $634 \pm 2$ K. First-principles simulations indicate that the system has a small density of states at the Fermi energy and confirm the lowest-energy magnetic ground state ordering, while Monte Carlo simulations match the experimental N\'{e}el temperature.

Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field

The responses of uncooled (T = 300 K) and cooled to T = 78 K antenna-coupled Hg1–xCdxTe-based narrow-gap thin-film photoconductors having large spin-orbit coupling and irradiated by the terahertz (THz) radiation (linearly or circularly polarized) have been investigated. Powerful THz radiation excitation causes photocurrents, which signs and magnitudes are controlled by orientation of antenna axes, an external constant electric field direction and orientation of the polarized (circular or linear) radiation electric field falling onto photoconductors. The observed effects seem to be caused by the spin currents observed in devices where spintronic effects are revealed. spintronic phenomena, photoconductors, THz radiation, HgCdTe.

Bound state energy of finger gate and top gate with consideration of Rashba-Dresselhaus-Zeeman effects

The spintronic effect of quantum transport is investigated in a fully-depleted spin transistor. The analysis considers the Zeeman effect caused by an external planar magnetic field and the electron transport characteristics induced under Rashba-Dresselhaus spin-orbit coupling. A transcendental equation is proposed for predicting the bound state energies of the conductance structure produced under the strong Rashha-Desselhaus-Zeeman effect. It is shown that the proposed equation provides an accurate means of predicting the bound state energy as a function of the potential energy and top gate length.