Bound state energy of finger gate and top gate with consideration of Rashba-Dresselhaus-Zeeman effects

Abstract

The spintronic effect of quantum transport is investigated in a fully-depleted spin transistor. The analysis considers the Zeeman effect caused by an external planar magnetic field and the electron transport characteristics induced under Rashba-Dresselhaus spin-orbit coupling. A transcendental equation is proposed for predicting the bound state energies of the conductance structure produced under the strong Rashha-Desselhaus-Zeeman effect. It is shown that the proposed equation provides an accurate means of predicting the bound state energy as a function of the potential energy and top gate length.