Abstract
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET) under the dc and ac operating conditions. The GNR-FET under consideration is based on a heterostructure, which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the dc and ac source-drain currents. Using the model developed, we derive explicit analytical formulas for the GNR-FET transconductance as a function of the signal frequency, collision frequency of electrons, and the top gate length. The transition from the ballistic to strongly collisional electron transport is considered.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
