Spintronic Terahertz Emitter Research Articles

Parallel generation and coding of a terahertz pulse train

The generation and coding of multi-cycle terahertz (THz) pulses offer interesting possibilities, such as frequency comb spectroscopy or ultra-fast packet communication. In contrast to the radio frequency domain, which has largely exploited packet communication, this research area is almost unexplored at THz frequencies. Indeed, because of the lack of fast modulation and detection methods at THz frequencies, current developments often rely on hybrid techniques mixing photonics and ultrafast electronics. Here, we present a method for the generation and modulation of a coded THz pulse train. Our scheme is based on the combination of a spintronic THz emitter (STE) with an echelon mirror and a digital micromirror device. This highly scalable configuration is capable of modulating a hundred or more THz pulses in parallel with sub-picosecond accuracy. Strikingly, the temporal resolution of our modulation scheme depends on geometric optics and not on a high-speed electronic device. Furthermore, our scheme confirms the ability of STEs to generate quasi-continuous THz pulses and offers a new photonic solution on dynamic THz pulse train control.

Disentangling complex current pathways in a metallic Ru/Co bilayer nanostructure using THz spectroscopy

Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers.

Electric field tuning of ultrafast demagnetization in a magnetoelectric heterostructure

Voltage/electric-field control of ultrafast magnetization dynamics in magnetoelectrics provides a novel avenue for electronic tuning with orders of magnitude less power consumption, improved tuning response time, and more compact form factor, compared with conventional magnetic field control of magnetization dynamics. Magnetoelectrically tuned laser-driven magnetization dynamics has the potential to enable the next generation of optomagnetic devices from THz communication to optical magnetic recording. In this study, we fabricated a magnetoelectric heterostructure, specifically ferromagnetic ${({\mathrm{Fe}}_{81}{\mathrm{Ga}}_{19})}_{88}{\mathrm{B}}_{12}$ (FeGaB) thin film deposited on a $\mathrm{Pb}({\mathrm{Mg}}_{1/3}\phantom{\rule{0.16em}{0ex}}{\mathrm{Nb}}_{2/3}){\mathrm{O}}_{3}\text{\ensuremath{-}}\mathrm{PbTi}{\mathrm{O}}_{3}$ ferroelectric substrate, to explore the electric field tuning of ultrafast demagnetization and to understand how magnetic anisotropy changes postdemagnetization. We characterized the magnetoelectric coupling of our heterostructure to demonstrate the static and dynamic magnetization tunability with an applied electric field. We utilized the time-resolved magneto-optic Kerr effect to understand the ultrafast demagnetization process under different applied electric fields and magnetic fields. The typically observed strain-induced magnetic easy-axis rotation in a ferromagnetic/ferroelectric heterostructure was also observed to tune the ultrafast demagnetization of FeGaB in our experiment. Additionally, we found that the magnetization rotation can be achieved with a lower electric field compared with static tuning without laser heating. Furthermore, we observed the hysteresis loops postultrafast demagnetization and found that the magnetoelectric heterostructure exhibits a mixture of volatile and nonvolatile behaviors. These findings shed light on the potential of our magnetoelectric heterostructure for ultrafast optomagnetic devices and electric field tuning of spintronic THz emitters.

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

AbstractRecent successful integration of semiconductors into spintronic THz emitters has demonstrated a new pathway of control over terahertz (THz) radiation through ultrafast demagnetization dynamics. Here, the spintronic THz emission from different ultrawide bandgap (UWBG) semiconductors interfaced with ferromagnets is studied. The authors show that the Schottky barrier in the UWBG semiconductor AlN acts as a spin filter that increases the polarization of the spin current injected from the ferromagnet. Furthermore, the authors show that the two‐dimensional electron gas at the interface between Al0.25Ga0.75N and GaN enhances the magnitude of the emitted radiation due to the high spin‐to‐charge conversion efficiency induced by the Rashba effect that results in a hallmark asymmetry in emission amplitude. The results provide a framework for future engineering of semiconducting/ferromagnet heterostructures for ultrafast communications technologies beyond 5G.

Spintronic Terahertz Emitters in Silicon-Based Heterostructures

Integration of active elements into silicon wafers is the first step towards their usage in modern electronic devices based on nanometric structures. Spintronic terahertz emitters, typically composed of nanometer-thin magnetic multilayer, have the outstanding capability of producing high-quality, broadband terahertz pulses using extremely simple heterostructures. A question remains on whether an efficient and cheap integration with other silicon-based technologies can be achieved. We show here that simply having a ferromagnetic layer on silicon produces remarkably efficient spintronic terahertz emission despite the low spin-orbit coupling of the individual components. We achieve this by leveraging on the natural formation of silicides at the interface of a transition metal and silicon. The cobalt silicide layer has good spin-to-charge conversion efficiency that reaches around 1/6 as that of the prototypical spintronics THz-emitter heterostructure cobalt/platinum.

Spatio-temporal superconducting dynamics driven by THz fields from topological spintronic terahertz emitters

Metastructures of spintronic THz emitters can be engineered to have a well-defined topology characterized by a topological charge. The emitted THz radiation possesses a phase-locked transversal and longitudinal components with the ratio of which being tunable by the topological charge of the underlying metastructure. The THz fields so produced are employed to drive and spatio-temporally modulate the superconducting order parameter in a type II superconductor. Using a time-dependent Landau-Ginzburg approach, it is demonstrated how the topology of the THz fields is reflected in a texturing of the superconducting phase and density. Full numerical simulations illustrate the emergence and the nanoscale steering of Abrikosov vortices as well as the local modification of the superconducting density and transport properties of nanoscale samples with different geometries. The study highlights the potential of metamaterials based on spintronic THz emitters as a coherent source for spatially and vectorially modulated THz radiation.

Antiferromagnetic-Ferromagnetic Heterostructure-Based Field-Free Terahertz Emitters.

Recently, ferromagnetic-heterostructure spintronic terahertz (THz) emitters have been recognized as one of the most promising candidates for next-generation THz sources, owing to their peculiarities of high efficiency, high stability, low cost, ultrabroad bandwidth, controllable polarization, and high scalability. Despite the substantial efforts, they rely on external magnetic fields to initiate the spin-to-charge conversion, which hitherto greatly limits their proliferation as practical devices. Here, a unique antiferromagnetic-ferromagnetic (IrMn3 |Co20 Fe60 B20 ) heterostructure is innovated, and it is demonstrated that it can efficiently generate THz radiation without any external magnetic field. It is assigned to the exchange bias or interfacial exchange coupling effect and enhanced anisotropy. By precisely balancing the exchange bias effect and enhanced THz radiation efficiency, an optimized 5.6 nm-thick IrMn3 |Co20 Fe60 B20 |W trilayer heterostructure is successfully realized, yielding an intensity surpassing that of Pt|Co20 Fe60 B20 |W. Moreover, the intensity of THz emission is further boosted by togethering the trilayer sample and bilayer sample. Besides, the THz polarization may be flexibly controlled by rotating the sample azimuthal angle, manifesting sophisticated active THz field manipulation capability. The field-free coherent THz emission that is demonstrated here shines light on the development of spintronic THz optoelectronic devices.

Controlling polarization of spintronic THz emitter by remanent magnetization texture

Terahertz (THz) sciences and technologies have contributed to a rapid development of a wide range of applications and expanded the frontiers in fundamental science. Spintronic terahertz emitters offer conceptual advantages since the spin orientation in the magnetic layer can be easily controlled either by the externally applied magnetic field or by the internal magnetic field distribution determined by the specific shape of the magnetic elements. Here, we report a switchable terahertz source based on micropatterned magnetic heterostructures driven by femtosecond laser pulses. We show that the precise tunability of the polarization state is facilitated by the underlying magnetization texture of the magnetic layer that is dictated by the shape of the microstructure. These results also reveal the underlying physical mechanisms of a nonuniform magnetization state on the generation of ultrafast spin currents in the magnetic heterostructures. Our findings indicate that the emission of the linearly polarized THz waves can be switched on and off by saturating the sample using a biasing magnetic field, opening fascinating perspectives for integrated on-chip THz devices with wide-ranging potential applications.

Electric-field control of nonlinear THz spintronic emitters

Energy-efficient spintronic technology holds tremendous potential for the design of next-generation processors to operate at terahertz frequencies. Femtosecond photoexcitation of spintronic materials generates sub-picosecond spin currents and emission of terahertz radiation with broad bandwidth. However, terahertz spintronic emitters lack an active material platform for electric-field control. Here, we demonstrate a nonlinear electric-field control of terahertz spin current-based emitters using a single crystal piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) that endows artificial magnetoelectric coupling onto a spintronic terahertz emitter and provides 270% modulation of the terahertz field at remnant magnetization. The nonlinear electric-field control of the spins occurs due to the strain-induced change in magnetic energy of the ferromagnet thin-film. Results also reveal a robust and repeatable switching of the phase of the terahertz spin current. Electric-field control of terahertz spintronic emitters with multiferroics and strain engineering offers opportunities for the on-chip realization of tunable energy-efficient spintronic-photonic integrated platforms.

Flexible Control of Broadband Polarization in a Spintronic Terahertz Emitter Integrated with Liquid Crystal and Metasurface.

Flexible polarization control of the terahertz wave in the wide bandwidth is crucial for numerous applications, such as terahertz communication, material characterization, imaging, and biosensing diagnosis. However, this promise is impeded by the operating bandwidth of circular polarization states, control modes, and the efficiency of the regulation. Here, we report a spintronic terahertz emitter integrated with phase complementary elements, consisting of a liquid crystal and metasurface, to achieve broadband polarization control with high flexibility. This strategy allows the broadband conversion between linear, elliptical, and circular polarization by changing the rotation angle to modulate the space-variant Pancharatnam-Berry phase. The device is characterized with a terahertz time-domain spectroscopy system, demonstrating that the ellipticity of the circular polarization state could keep greater than 0.9 in 0.60-0.99 THz. In the case of an external electro-magnetic field, further polarization modulation experiments are carried out to provide multiple conversion approaches for multi-azimuth. We first propose a method of full broadband polarization state control of the terahertz emitter based on Pancharatnam-Berry phase modulation and an external electro-magnetic field. We believe that such integrated devices with broadband working bandwidth and multiple control modes will make valuable contributions to the development and multi-scene applications of ultrafast terahertz technologies.

Cascaded Amplification and Manipulation of Terahertz Emission by Flexible Spintronic Heterostructures

AbstractSpintronic heterostructures consisting of ferromagnetic (FM) and nonmagnetic (NM) have become increasingly important devices for terahertz (THz) pulse generation, named as spintronic THz emitter (STE). The recycling of the laser pump energy is known to have a key impact on further improvement of the THz emission. Here, an efficient and practical approach to enhance and manipulate THz generation based on a cascaded Pt/CoFe/Ta trilayer fabricated on a flexible polyethylene terephthalate (PET) substrate is shown. Considering the refractive index n of PET is ≈1.61 at 1.55 eV and ≈1.75 at THz frequencies, it is anticipated that the femtosecond (fs) laser pulse propagates with a similar group velocity as the generated THz pulse. Therefore, the cascaded design enables all THz emission from each PET/STE propagating almost in‐phase and yields a 1.55 times amplification compared to a single PET/STE. Two proof‐of‐concept demonstrations are experimentally presented. First one, a metasurface can be assembled with the cascaded PET/STE to manipulate the THz signal. Second one, the cascaded PET/STE is used to perform a spectroscopic measurement of riboflavin. These demonstrations highlight the potential of flexible PET/STE for building blocks of advanced functionalities, such as compact THz emitters, THz spectroscopic, and imaging systems.

Average power scaling of THz spintronic emitters efficiently cooled in reflection geometry.

Metallic spintronic terahertz (THz) emitters have become well-established for offering ultra-broadband, gapless THz emission in a variety of excitation regimes, in combination with reliable fabrication and excellent scalability. However, so far, their potential for high-average-power excitation to reach strong THz fields at high repetition rates has not been thoroughly investigated. In this article, we explore the power scaling behavior of tri-layer spintronic emitters using an Yb-fiber excitation source, delivering an average power of 18.5 W (7 W incident on the emitter after chopping) at 400 kHz repetition rate, temporally compressed to a pulse duration of 27fs. We confirm that a reflection geometry with back-side cooling is ideally suited for these emitters in the high-average-power excitation regime. In order to understand limiting mechanisms, we disentangle the effects on THz power generation by average power and pulse energy by varying the repetition rate of the laser. Our results show that the conversion efficiency is predominantly determined by the incident fluence in this high-average-power, high-repetition-rate excitation regime if the emitters are efficiently cooled. Using these findings, we optimize the conversion efficiency and reach highest excitation powers in the back-cooled reflection geometry. Our findings provide guidelines for scaling the power of THz radiation emitted by spintronic emitters to the milliwatt-level by using state-of-the-art femtosecond sources with multi-hundred-Watt average power to reach ultra-broadband, strong-field THz sources with high repetition rate.

Ultrafast light-induced THz switching in exchange-biased Fe/Pt spintronic heterostructure

The ultrafast optical control of magnetization in spintronic structures enables one to access to the high-speed information processing, approaching the realm of terahertz (THz). Femtosecond visible/near-infrared laser-driven ferromagnetic/nonmagnetic metallic spintronic heterostructures-based THz emitters combine the aspects from the ultrafast photo-induced dynamics and spin-charge inter-conversion mechanisms through the generation of THz electromagnetic pulses. In this Letter, we demonstrate photoexcitation density-dependent induced exchange-bias tunability and THz switching in an annealed Fe/Pt thin-film heterostructure, which otherwise is a widely used conventional spintronic THz emitter. By combining the exchange-bias effect along with THz emission, the photo-induced THz switching is observed without any applied magnetic field. These results pave the way for an all-optical ultrafast mechanism to exchange-bias tuning in spintronic devices for high-density storage, read/write magnetic memory applications.

Terahertz-wave decoding of femtosecond extreme-ultraviolet light pulses

In recent years, femtosecond extreme-ultraviolet (XUV) and x-ray pulses from free-electron lasers have developed into important probes to monitor processes and dynamics in matter on femtosecond-time and angstrom-length scales. With the rapid progress of versatile ultrafast x-ray spectroscopy techniques and more sophisticated data analysis tools, accurate single-pulse information on the arrival time, duration, and shape of the probing x-ray and XUV pulses becomes essential. Here, we demonstrate that XUV pulses can be converted into terahertz electromagnetic pulses using a spintronic terahertz emitter. We observe that the duration, arrival time, and energy of each individual XUV pulse is encoded in the waveform of the associated terahertz pulses, and thus can be readily deduced from single-shot terahertz time-domain detection.

Spintronic sources of ultrashort terahertz electromagnetic pulses

Spintronic terahertz emitters are broadband and efficient sources of terahertz radiation, which emerged at the intersection of ultrafast spintronics and terahertz photonics. They are based on efficient spin-current generation, spin-to-charge-current conversion, and current-to-field conversion at terahertz rates. In this Editorial, we review the recent developments and applications, the current understanding of the physical processes, and the future challenges and perspectives of broadband spintronic terahertz emitters.

THz emission from Fe/Pt spintronic emitters with L10-FePt alloyed interface

SummaryRecent developments in nanomagnetism and spintronics have enabled the use of ultrafast spin physics for terahertz (THz) emission. Spintronic THz emitters, consisting of ferromagnetic (FM)/non-magnetic (NM) thin film heterostructures, have demonstrated impressive properties for the use in THz spectroscopy and have great potential in scientific and industrial applications. In this work, we focus on the impact of the FM/NM interface on the THz emission by investigating Fe/Pt bilayers with engineered interfaces. In particular, we intentionally modify the Fe/Pt interface by inserting an ordered L10-FePt alloy interlayer. Subsequently, we establish that a Fe/L10-FePt (2 nm)/Pt configuration is significantly superior to a Fe/Pt bilayer structure, regarding THz emission amplitude. The latter depends on the extent of alloying on either side of the interface. The unique trilayer structure opens new perspectives in terms of material choices for the next generation of spintronic THz emitters.

Efficient and temperature-independent terahertz emission from CoFeB/NiCu heterostructures

Spintronic terahertz (THz) emission has been investigated in ferromagnetic (FM) metal/nonmagnetic (NM) metal, FM/semiconductor, and FM/topological insulator systems. However, THz emission in the heterojunction of FM and $3d$ transition light metal is rarely reported. Large spin Hall angles have been observed in a light metal alloy of the $3d$ transition metal NiCu, allowing for the emission of high-performance THz waves without the use of heavy metal. Here, we present a comprehensive study of THz emission from a CoFeB/NiCu heterostructure, with peak intensity of emitted THz pulses up to half that of CoFeB/Pt. The THz radiation from CoFeB/NiCu is shown to be generated by the spin-to-charge conversion in NiCu via the inverse spin Hall effect. The evolution of the THz signal of $\mathrm{CoFeB}/{\mathrm{Ni}}_{70}{\mathrm{Cu}}_{30}$ across ${\mathrm{Ni}}_{70}{\mathrm{Cu}}_{30}$ Curie temperature is also explored, and it is discovered that the THz emission signal in this sample is temperature independent and unaffected by the magnetic state of ${\mathrm{Ni}}_{70}{\mathrm{Cu}}_{30}$. Our findings highlight the great potential of light metal alloys containing $3d$ transition elements as spintronic THz emitters. Moreover, it has been demonstrated that THz emission spectroscopy is a helpful tool for investigating inverse spin Hall effect or anomalous Hall effect in ferromagnets.

Fully reversible magnetoelectric voltage controlled THz polarization rotation in magnetostrictive spintronic emitters on PMN-PT

THz polarization control upon generation is a crucially missing functionality. THz spintronic emitters based on the inverse spin Hall effect (ISHE) allow for this by the strict implicit orthogonality between their magnetization state and the emitted polarization. This control was until now only demonstrated using cumbersome external magnetic field biasing to impose a polarization direction. We present here an efficient voltage control of the polarization state of terahertz spintronic emitters. Using a ferromagnetic spin pumping multilayer exhibiting simultaneously strong uniaxial magnetic anisotropy and magnetostriction in a crossed configuration, an emitter is achieved where, in principle, the stable magnetization direction can be fully and reversibly controlled over a 90° angle span only by an electric voltage. To achieve this, an engineered rare-earth based ferromagnetic multilayer is deposited on a piezoelectric (1−x)[Pb(Mg0.33Nb0.66)O3]−x[PbTiO3] (PMN-PT) substrate. We demonstrate experimentally a reversible 70° THz polarization rotation by sweeping the substrate voltage over 400 V. This demonstration allows for a fully THz polarization controlled ISHE spintronic terahertz emitter not needing any control of the magnetic bias.

Nanostructured Spintronic Emitters for Polarization-Textured and Chiral Broadband THz Fields

Spintronic THz emitters (STEs) rely on spin current acceleration or decay, resulting in a burst of broadband THz emission, offering a new route to THz optics. Here, we demonstrate novel metastructures of STEs for molding the vectorial focal distribution of the emitted THz radiations. The metastructures also allow controlling the characteristics of local fields. Performing combined micromagnetic-electromagnetic simulations, we demonstrate the generation of broadband THz fields with designed vectorial, chiral, magnetic, or topological features and discuss the potential of these fields for studying magnetic, multiferroic, and chiral structures. The STEs metastructure is shown to produce higher-order electric and magnetic multipoles as well as localized, longitudinal, broadband magnetoelectric THz pulses. Furthermore, subwavelength features of the near fields at a distance less than 10 μm can be tuned by steering the magnetization of the metastructure. The results point to a new type of engineered STEs for the generation of structured broadband THz fields, with potential applications in the fields of optoelectronics, optics, and ultrafast magnetism.

Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers

Spintronic terahertz (THz) emitters based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials, and control of these interfaces at the nanometer level have become vital to engineer their THz emission properties. In this work, we present studies of the optimization of such structures through a multi-pronged approach, taking advantage of material and interface engineering to enhance THz spintronic emission. This includes the application of multi-stacks of HM/FM junctions and their application to trilayer structures, the use of spin-sinks to simultaneously enhance the THz emitted fields and reduce the use of thick Pt layers to reduce optical absorption, and the use of semi-metals to increase the spin polarization and, thus, THz emission. Through these approaches, significant enhancements of the THz field can be achieved. Importantly, taking into account the optical absorption permits to elucidate novel phenomena such as the relation between the spin diffusion length and the spin-sink using THz spectroscopy, as well as possibly distinguishing between self- and interface-spin-to-charge conversion in semi-metals.