Spintronic Technologies Research Articles

Exploring Spin-Crossover Cobalt(II) Single-Ion Magnets as Multifunctional and Multiresponsive Magnetic Devices: Advancements and Prospects in Molecular Spintronics and Quantum Computing Technologies

Spin-crossover (SCO) and single-ion magnets (SIMs), or their mixed SCO-SIM derivatives, are a convenient solution in the evolution from molecular magnetism toward molecular spintronics and quantum computing. Herein, we report on the current trends and future directions on the use of mononuclear six-coordinate CoII SCO-SIM complexes with potential opto-, electro-, or chemo-active 2,6-pyridinediimine (PDI)- and 2,2′:6′,2′-terpyridine (TERPY)-type ligands as archetypical examples of multifunctional and multiresponsive magnetic devices for applications in molecular spintronics and quantum computing technologies. This unique class of spin-crossover cobalt(II) molecular nanomagnets is particularly well suited for addressing and scaling on different supports, like metal molecular junctions or carbon nanomaterials (CNMs) and metal–organic frameworks (MOFs) or metal-covalent organic frameworks (MCOFs), in order to measure the single-molecule electron transport and quantum coherence properties, which are two major challenges in single-molecule spintronics (SMS) and quantum information processing (QIP).

Ultra-low Gilbert damping and self-induced inverse spin Hall effect in GdFeCo thin films

Ferrimagnetic materials have garnered significant attention due to their broad range of tunabilities and functionalities in spintronics applications. Among these materials, rare earth-transition metal GdFeCo alloy films have been the subject of intensive investigation due to their spin-dependent transport properties and strong spin–orbit coupling. In this report, we present self-induced spin-to-charge conversion in single-layer GdFeCo films of different thicknesses via an inverse spin Hall effect. A detailed investigation of spin dynamics was carried out using broadband ferromagnetic resonance measurements. The anisotropy constant and the effective g-factor are found to decrease with thickness, and they become nearly constant for thicknesses beyond 25 nm. A remarkably low damping constant of 0.0029 ± 0.0003 is obtained in the 43 nm-thick film, which is the lowest among all previous reports on GdFeCo thin films. Furthermore, we have demonstrated a self-induced inverse spin Hall effect, which has not been reported so far in a single-layer of GdFeCo thin films. Our analysis shows that the inverse spin Hall effect becomes increasingly dominant over the spin rectification effect with increasing film thickness. The in-plane angular-dependent voltage measurement of the 43 nm-thick film reveals a spin pumping voltage of 1.64 μV. The observation of spin-to-charge current conversion could be due to the high spin–orbit coupling element Gd in the film as well as the interface between GeFeCo/Ti and substrate/GdFeCo of the films. Our findings underscore the potential of GdFeCo as a prime ferrimagnetic material for emerging spintronic technologies.

Giant Valley Zeeman Splitting in Vanadium-Doped WSe2 Monolayers.

2D dilute magnetic semiconductors (DMS) based on transition metal dichalcogenides (TMD) offer an innovative pathway for advancing spintronic technologies, including the potential to exploit phenomena such as the valley Zeeman effect. However, the impact of magnetic ordering on the valley degeneracy breaking and on the enhancement of the optical transitions g-factors of these materials remains an open question. Here, a giant effective g-factors ranging between ≈-27 and -69 for the bound exciton at 4K in vanadium-doped WSe2 monolayers, obtained through magneto-photoluminescence (PL) experiments is reported. This giant g-factor disappears at room temperature, suggesting that this response is associated with a magnetic ordering of the vanadium impurity states at low temperatures. Ab initio calculations for the vanadium-doped WSe2 monolayer confirm the existence of magnetic ordering of the vanadium states, which leads to degeneracy breaking of the valence bands at K and K'. A phenomenological analysis is employed to correlate this splitting with the measured enhanced effective g-factor. The findings shed light on the potential of defect engineering of 2D materials for spintronicapplications.

DFT study of structural, electronic, magnetic, elastic, and thermoelectric properties of Ta-based half-Heusler alloys CsTaX (X = C, Si, and Ge) for spintronics and thermoelectric technologies

The structural, electronic, elastic, magnetic, and thermoelectric characteristics of three novel Ta-based half-Heusler alloys, CsTaC, CsTaSi, and CsTaGe, have been investigated using the Full-Potential Linearized Augmented Plane Wave (FP-LAPW) method within the density functional theory (DFT). The volume-optimization graphs show that all compounds are stable in the ferromagnetic (FM) phase. Half-Metallicity of these compounds is confirmed by the density of states (DOS) and band structures. The total magnetic moment for CsTaC is 6 μB, and for CsTaX (X = Si, Ge) is 2 μB. The negative pd exchange energy and exchange constants confirm ferromagnetism. The values of Pugh’s ratio (B/G) and Poisson’s ratio (v) reveal that CsTaC is ductile and CsTaX (Si, Ge) is brittle. The thermoelectric response is estimated using the BoltzTraP code, demonstrating that at room temperature, maximum ZT values for CaTaC, CsTaSi, and CsTaGe are 0.99, 0.97, and 0.90, respectively. Consequently, CsTaX (X = C, Si, and Ge) are suitable candidates for spintronic and thermoelectric technologies.

A DFT theoretical prediction of new half-metallic ferromagnetism, mechanical stability, optoelectronic and thermoelectric properties of ZnCrO3 perovskites for spintronic applications

ZnCrO3 perovskites structural stability, optoelectronic, mechanical, along with thermoelectric properties, have all been to be described by calculations based on density functional theory (DFT). To determine the exchange correlation potential, the well-known generalized gradient approximation (GGA) and integration of the mBJ potential were used. The perovskite shows that this is in a cubic structure with Fm3m symmetry. Additionally, to check the stability, cohesive energy, structural optimization, and mechanical stability were requirements. This perovskite was found to be brittle, and their mechanical stability enhanced by the elastic constants. The perovskite has a half-metallic character, as evidenced by the spin-polarized electronic band profile, the behavior of the dielectric constant, and absorption coefficient in the spin-up and down channels. In this article, we also looked at magnetism and the origin of the half-metallic gap. The unpaired electrons in the split d-orbitals of the M-sited elements in the crystal field are responsible for the half-metallic as well as magnetic characteristics. Excellent spin polarization at the Fermi level encourages perovskite's possible use in spintronic technologies. Lastly, we computed the thermoelectric parameters within a chemical potential at various temperatures (300 K, 600, 900 K) to explore the potential application in spin electronic devices. Our finding shows that the ZnCrO3 alloy is exceptionally promising for the next generation of spintronics and thermoelectric devices at room and high temperatures.

Cutting-edge technologies and recent modernization on multifunctional perovskite materials for green energy conversion and spintronic applications

This featured letter summarizes the recent developments in green energy and spintronic technologies based on multifunctional i.e., multiferroic (MF) and magnetoelectric (ME) materials. These are non-toxic materials, find applications in spintronic, non-volatile memory devices, microelectromechanical systems (MEMS), photovoltaics and next generation IC miniaturization devices. Recent studies on MF and ME materials have probed and analyzed significant properties such as evidence of photo-response and significant power conversion efficiency (PCE) of multiferroic-based solar cells (SCs), evidence of electro-caloric effect (ECE) which find usage in non-toxic solid state refrigeration devices, photo- and electro-catalytic activities for green hydrogen generation, magnon-phonon coupling and existence of magnon polarons which can facilitate spintronic device technology and thermal Hall effect and, hybrid nano-generators utilized to empower portable electronic devices. All such applications are comprehensively analyzed in-depth in this letter.

GaAs quantum transport: Scrutinizing the effects of pressure, temperature and Rashba-Dresselhaus spin-orbit interactions for next-generation spintronic devices

This research investigates the spin-dependent transmission attributes and associated Giant Magnetoresistance (GMR) effect emerging from spin-polarized electron tunneling in a GaAs quantum well superlattice (QWS). The influence of Rashba and Dresselhaus spin-orbit interactions (SOIs) on transport properties is analyzed under the framework of the scattering matrix method. Our quantitative findings revealed that these spin-orbit couplings (SOCs) introduce inherent spin-filtering mechanisms, significantly influencing transmission probabilities. Furthermore, numerical estimations proved that external perturbations including pressure, temperature and structural modifications considerably impact the quantum transport characteristics of the scrutinized system. Additionally, major outcomes suggest that precise manipulation of spin-dependent transport in GaAs QWS holds promise for advancing spintronics technology. It is found that with well-tuned parameter values, the SOCs behave as a spin-dependent barrier modifying the band shape and its anisotropy. This study offers novel insights into the fundamental physics governing spin-dependent transport within quantum superlattices with promising implications for the development of advanced spintronic devices.

Spin Transport Modulation of 2D Fe3O4 Nanosheets Driven by Verwey Phase Transition.

Realizing spin transport between heavy metal and two-dimensional(2D) magnetic materials at high Curie temperature (TC) is crucial to advanced spintronic information storage technology. Here, environmentally stable 2D nonlayered Fe3O4 nanosheets are successfully synthesized using a reproducible process and found that they exhibit vortex magnetic domains at room temperature. A Verwey phase transition temperature (TV) of ≈110 K is identified for ≈3nm thick nanosheet through Raman characterization and spin Hall device measurement of the Pt/Fe3O4 bilayer. The anisotropic magnetoresistance ratio decreases near TV, while both the spin Hall magnetoresistance ratio and spin mixing conductance (Gr) increase at TV. As the temperature approaches 112 K, the anomalous Hall effect ratio tends to become zero. The maximum Gr reaches ≈5 × 1015 Ω-1m-2 due to the clean and flat interface between Pt and 2D nanosheet. The observed spin transport behavior in Pt/Fe3O4 spin Hall devices indicates that 2D Fe3O4 nanosheets possess potential for high-power micro spintronic storage devices applications.

Magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions

This work investigates the interplay between interfacial spin–orbit coupling (SOC) and magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions, which is crucial for advancing spintronic technologies. By employing systematic temperature-dependent transport measurements and inelastic electron tunneling spectroscopy, our study reveals that interfacial SOC at the Pt-terminated FePt/MgO interface significantly enhances magnon excitation during electron tunneling. This process results in a pronounced loss of spin memory in the spin-polarized current, diminishing the tunnel magnetoresistance ratio. Our findings provide critical insights into the mechanisms of spin memory loss, offering directions for optimizing spintronic device performance in the context of pronounced SOC environments.

Magnetic splitting induced ferromagnetism in chromium-doped HfSe2

Two-dimensional (2D) magnetic layered materials have gained significant interest in spintronic for memory storage devices. Herein, the electronic and magnetic properties of high-quality single crystals of chromium (Cr)-doped hafnium diselenide were studied. The electronic study indicated that the Cr-doped HfSe2 reveals the semiconducting nature with a proper bandgap as identified by angle-resolved photoemission spectroscopy and first-principle density functional theory (DFT) calculations. The magnetic results indicate that the HfSe₂ exhibited ferromagnetic characteristics with the substitution of Cr atoms in a perpendicular direction. The Cr-doped HfSe2 sample shows a ferromagnetic phase below ∼58 K, indicating the critical temperature (Tc) of magnetic order, while above this temperature, it shows a paramagnetic phase that can follow the Curie-Weiss Law. It can be seen that the magnetic moment is approximately 0.16 emu/g at 5 K, which further decreases with increasing temperature until 60 K and then transforms to a paramagnetic phase. The sample can clearly show a weak out-of-plane magnetic anisotropy with a coercivity of around 50.56 Oe and a saturation magnetization value of 0.029 emu/g. Convincingly, it was observed from the ARPES results that the valence band is split due to the spin-orbit interaction of Cr atoms, which can induce ferromagnetic order. At the same time, the temperature-dependent ARPES data shows that the splitting is higher below the Tc, while it is weaker above the Tc. The DFT results revealed that near the Fermi level, the spin-up and spin-down are spin-polarized with asymmetric trends. It can be observed that substituting Cr on the octahedral sites of Hf atoms influences the electron spin order created by Hf vacancies (as validated by the magnetic coupling measured by electron paramagnetic resonance spectroscopy experiments), which can change the magnetic alignment to induce the magnetism in HfSe2. This study highlights that doping transition metal in HfSe2 has promising potential for future applications, especially in memory devices and spintronic technologies.

Improving structural and magnetic properties of zinc stannate thin films through nickel doping via sol–gel method

Ternary oxides are currently emerging as promising materials for optoelectronic devices and spintronics, surpassing binary oxides in terms of their superior properties. Among these, zinc stannate (Zn2SnO4) stands out due to its stability and attractive physical characteristics. However, despite its outstanding attributes, there is a need to further develop its magnetic properties for spintronic applications. In this study, Ni-doped Zn2SnO4 thin films were synthesized using the sol–gel method, and their magnetic characteristics were investigated for the first time. X-ray diffraction analysis confirmed the high crystallinity of the synthesized samples, even after the incorporation of Ni dopants, without any secondary phases. SEM imaging revealed the cubic structure morphology of the thin films. An increase in the bandgap, dependent on the Ni dopant concentration, was observed for doped zinc stannate, suggesting potential for tailored electronic properties. FTIR spectroscopy confirmed the presence of functional groups within the material. Notably, the magnetic properties of the thin films were analyzed using a vibrating sample magnetometer (VSM), revealing diamagnetic behavior for pure zinc stannate and ferromagnetic properties for Ni-doped Zn2SnO4, which increased with dopant concentration. Overall, the results highlight the excellent structural, optical, and ferromagnetic properties of Ni-doped Zn2SnO4 thin films, positioning them for diverse applications, particularly in optoelectronic and spintronic technology.

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach.

GaN is a technologically indispensable material for various optoelectronic properties, mainly due to the dopant-induced or native atomic-scale point defects that can create single photon emitters, a range of luminescence bands, and n- or p-type conductivities. Among the various dopants, chromium and manganese-induced defects have been of particular interest over the past few years, because some of them contribute to our present-day light-emitting diode (LED) and spintronic technologies. However, the nature of such atomistic centers in Cr and Mn-doped GaN is yet to be understood. A comprehensive defect thermodynamic analysis of Cr- and Mn-induced defects is essential for their engineering in GaN crystals because by mapping out the defect stabilities as a function of crystal growth parameters, we can maximize the concentration of the target point defects. We therefore investigate chromium and manganese-induced defects in GaN with ab initio methods using the highly accurate exchange-correlation hybrid functionals, and the phase transformations upon excess incorporation of these dopants using the CALPHAD method. We also investigate the impact of oxygen codoping that can be unintentionally incorporated during crystal growth. Our analysis sheds light on the atomistic cause of the unintentional n-type conductivity in GaN, being ON-related. In the case of Cr doping, the formation of CrGa defects is the most dominant, with an E +/0 charge transition at E VBM + 2.19 eV. Increasing nitrogen partial pressure tends to enhance the concentration of CrGa. However, in the case of doping with Mn, several different Mn-related centers can form depending on the growth conditions, with MnGa being the most dominant. MnGa possesses the E 2+/+, E +/0, and E 0/- charge transitions at 0.56, 1.04, and 2.10 eV above the VBM. The incorporation of oxygen tends to cause the formation of the MnGa-VGa center, which explains a series of prior experimental observations in Mn-doped GaN. We provide a powerful tool for point defect engineering in wide band gap binary semiconductors that can be readily used to design optimal crystal growth protocols.

Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

Using the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our calculated transmission spectra have nicely explained why there’s a GMR up to 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-up current at biases of -1.2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.2$$\\end{document} V, -1.1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.1$$\\end{document} V, and -1.0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.0$$\\end{document} V, and also accounted for a GMR up to 103\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}–105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.

Magnetotransport properties of ternary tetradymite films with high mobility

(Bi,Sb)2(Te,Se)3 tetradymite materials are among the most efficient for thermoelectric energy conversion, and most robust for topological insulator spintronic technologies, but should possess rather disparate doping properties to be useful for either technology. In this work, we report results on the molecular beam epitaxy growth of p-type (Bi0.43Sb0.57)2Te3 and n-type Bi2(Te0.95Se0.05)3 that can contribute to both technology bases, but are especially useful for topological insulators where low bulk doping is critical for devices to leverage the Dirac-like topological surface states. Comprehensive temperature, field and angular dependent magnetotransport measurements have attested to the superior quality of these ternary tetradymite films, displaying low carrier density on the order of 1018 cm−3 and a record high mobility exceeding 104 cm2 V−1 s−1 at 2 K. The remarkable manifestation of strong Shubnikov–de Haas (SdH) quantum oscillation under 9 T at liquid helium temperatures, as well as the analyses therein, has allowed direct experimental investigation of the tetradymite electronic structure with optimized ternary alloying ratio. Our effort substantiates tetradymites as a critical platform for miniaturized thermoelectric cooling and power generation in wearable consumer electronics, as well as for futuristic topological spintronics with unprecedented magnetoelectric functionalities.

Fast Transfer of Triplet to Doublet Excitons from Organometallic Host to Organic Radical Semiconductors.

Spin triplet exciton formation sets limits on technologies using organic semiconductors that are confined to singlet-triplet photophysics. In contrast, excitations in the spin doublet manifold in organic radical semiconductors can show efficient luminescence. Here the dynamics of the spin allowed process of intermolecular energy transfer from triplet to doublet excitons are explored. A carbene-metal-amide (CMA-CF3) is employed as a model triplet donor host, since following photoexcitation it undergoes extremely fast intersystem crossing to generate a population of triplet excitons within 4ps. This enables a foundational study for tracking energy transfer from triplets to a model radical semiconductor, TTM-3PCz. Over 74% of all radical luminescence originates from the triplet channel in this system under photoexcitation. It is found that intermolecular triplet-to-doublet energy transfer can occur directly and rapidly, with 12% of triplet excitons transferring already on sub-ns timescales. This enhanced triplet harvesting mechanism is utilized in efficient near-infrared organic light-emitting diodes, which can be extended to other opto-electronic and -spintronic technologies by radical-based spin control in molecular semiconductors.

Guest Editorial: Special Issue on Spin Pumping and Spin-Orbit Torques in Magnetic Heterostructures

Spin pumping and spin-orbit torques play important roles in advancing spintronic device technologies. Our curated special issue focuses on these phenomena in magnetic heterostructures, which are critical for various applications. The high-quality papers 1 , 2 , 3 , 4 , 5 , 6 , 7 delve into spin pumping and spin-orbit torques in diverse heterostructures, addressing topics such as insulating/metallic interfaces tailoring spin-to-charge conversion, the influence of HfOx capping layers on perpendicular magnetic anisotropy, anisotropy-controlled spin current generation, sputter pressure-dependent spin Hall angle, the effect of oxygen ion irradiation on spin-orbit torques, and a review paper of emerging two-dimensional/ferromagnetic interfaces. This Editorial discusses the reported articles and the future perspective of these topics. With this special issue, we anticipate significant contributions to both academic research and industrial developments in this direction.

Theoretical study on the effects of Mn ion doping and applied magnetic field in (In,Mn)As

Diluted magnetic semiconductors are a recent research area due to their ability to enhance ferromagnetic properties and facilitate the electrical detection of magnetoresistance and polarization. (In, Mn)As dilute magnetic semiconductor has potential application in the field of spintronic devices, such as spin field-effective transistors, spin laser light-emitted diodes, modern technology, multi-functional devices, green technology, and nanotechnology. For this study, we have considered the RKKY interaction between Mn2+ spins via delocalized carriers. The effect of manganese ion concentration and applied magnetic field on ferromagnetic diluted magnetic semiconductor properties such as dispersion relation, Curie temperature, and reduced magnetization of (In, Mn)As are studied. We have developed a spin-wave model using the Holstein-Primakaff transformation. Based on the developed model, the number of ferromagnetic magnons, dispersion relations, and Curie temperatures were calculated with or without an applied magnetic field. The reduced magnetization is also calculated. The graph of Curie temperature and magnetization of (In,Mn)As versus temperature with applied field up to 6 T and manganese ion concentration from 0.01 to 0.1 are plotted. The graph of spin wave dispersion of (In,Mn)As versus a wave vector with varying manganese ion concentration with and without an applied magnetic field up to 6 T. In this study, an InMnAs Curie temperature of 290.68 K is found without an applied magnetic field with a 0.1 manganese ion concentration, which is near room temperature. Moreover, with an applied magnetic field of 6 T at 0.1 manganese ion concentration, a Curie temperature of 342.466 K is found, which is above room temperature. Hence, these temperatures are suitable for the field of next-generation spintronic new technology.

Bimerons create bimerons: Proliferation and aggregation induced by currents and magnetic fields

AbstractThe aggregation of topological spin textures at nano and micro scales has practical applications in spintronic technologies. Here, the authors report the in‐plane current‐induced proliferation and aggregation of bimerons in a bulk chiral magnet. It is found that the spin‐transfer torques can induce the proliferation and aggregation of bimerons only in the presence of an appropriate out‐of‐plane magnetic field. It is also found that a relatively small damping and a relatively large non‐adiabatic spin‐transfer torque could lead to more pronounced bimeron proliferation and aggregation. Particularly, the current density should be larger than a certain threshold in order to trigger the proliferation; namely, the bimerons may only be driven into translational motion under weak current injection. Besides, the authors find that the aggregate bimerons could relax into a deformed honeycomb bimeron lattice with a few lattice structure defects after the current injection. The results are promising for the development of bio‐inspired spintronic devices that use a large number of aggregate bimerons. The findings also provide a platform for studying aggregation‐induced effects in spintronic systems, such as the aggregation‐induced lattice phase transitions.

High‐Throughput Optimization of Magnetoresistance Materials Based on Lock‐In Thermography

AbstractWith the giant magnetoresistance (GMR) effect serving as a vital component in modern spintronic technologies, researchers are dedicating significant efforts to improve the performance of GMR devices through material exploration and design optimization. However, traditional GMR measurement approaches are inefficient for comprehensive material and device optimization. This study proposes a high‐throughput current‐in‐plane GMR measurement technique based on thermal imaging of Joule heating utilizing lock‐in thermography (LIT). This LIT‐based technique is advantageous for efficiently evaluating films with varying compositions and thickness gradients, which is crucial for ongoing material exploration and design optimization to enhance the GMR ratio. First, it is demonstrated that using CoFe/Cu multilayers, the simple Joule heating measurement based on LIT enables quantitative estimation of the GMR ratio. Then, to confirm the usefulness of the proposed method in high‐throughput material screening, a case study is shown to investigate the GMR of CoCu‐based granular films with a composition gradient. These techniques allow to determine the optimum composition with maximum GMR ratio using the single composition‐gradient film and reveal Co22Cu78 as the optimal composition, yielding the largest GMR ratio among the reported polycrystalline CoCu‐based granular films. This demonstration accelerates the material and structural optimization of GMR devices.

A spin-torque nano-oscillator based on interlayer-coupled meron–skyrmion pairs with a fixed orbit

In recent years, magnetic skyrmion-based spin-torque nano-oscillators (STNOs) have attracted considerable interest for their prospect in future-generation communication and spintronic technologies. However, some critical issues, which hamper their practical applications, e.g., the long start-up time and variable skyrmion gyration orbit, remain to be resolved. Here, we numerically demonstrate the realization of a fixed-orbit STNO, which is based on an interlayer-coupled meron–skyrmion (MS) pair instead of a magnetic skyrmion. In this STNO, the MS pair possesses a structurally defined, fixed orbit within a broad range of driving currents, even in the presence of random defects. The output frequency range of the STNO based on an MS pair far exceeds that of the STNO typically featuring a single skyrmion. Moreover, the output frequency of this STNO can be further elevated if more MS pairs are incorporated. Our results reveal the nontrivial dynamics of the interlayer-coupled MS pair, opening perspectives for the design and optimization of fundamental spintronic devices.