Spin-orbit Torque Research Articles

Diode and Selective Routing Functionalities Controlled by Geometry in Current-Induced Spin-Orbit Torque Driven Magnetic Domain Wall Devices.

Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current direction provides an additional degree of control over the current-induced DW motion. A DW conduit with a 45° section relative to the current direction enables asymmetrical DW behavior: for one DW polarity, motion proceeds freely, while for the opposite polarity, motion is impeded or even blocked in the 45° zone, depending on the interfacial Dzyaloshinskii-Moriya interaction strength. This enables the device to function as a DW diode. Leveraging this velocity asymmetry, we designed a Y-shaped DW conduit with one input and two output branches at +45° and -45°, functioning as a DW selector. A DW injected into the junction exits through one branch, while a reverse polarity DW exits through the other, demonstrating selective DW routing.

Performance Analysis of Spin Orbit Torque Magneto-Resistive RAM Caches in 4-core ARM Systems

Spin Orbit Torque Magnetic Random Access Memory (SOT–)MRAM is gaining interest as it eradicates several limitations posed by its predecessor Spin Transfer Torque (STT-)MRAM, yet inherits all its advantages. This work explores in detail, the suitability of SOT–MRAM implemented caches in different levels of memory hierarchy in comparison to conventional SRAM technology, over several performance parameters like area, energy consumption and execution time for an embedded benchmark suite. Our circuit-level analysis shows that SOT–MRAM outperforms SRAM for caches ([Formula: see text] KB), and only lags in area and read-access energy for smaller caches. A typical 512 KB SOT–MRAM cache improves area by 1%, read/write latency by 33/38%, and leakage by over 99% than that of SRAM memory technology. The architecture-level analysis confirms that on average SOT–MRAM is energy efficient by 74% in L1, 97.2% in L2 and 89.3% in both (i.e., L1 + L2) implementations against SRAM, for a 22[Formula: see text]nm technology node. We also estimate that SOT–MRAM only solution offers [Formula: see text]% energy savings and [Formula: see text]% better EDP than Hybrid (L1-SRAM and L2-SOT) memory hierarchy for multi-core ARM processors.

Comparative Study of Current-Induced Torque in Cr/CoFeB/MgO and W/CoFeB/MgO.

Orbital torque (OT) in magnetic heterostructures has been actively discussed in terms of its actual existence and usefulness in comparison to the spin-orbit torque (SOT) that shows promise for next-generation magnetoresistive random access memories. The objectives of this study are 2-fold: (i) making an apples-to-apples comparison in two representative stacks where OT and SOT are expected to dominate and (ii) examining the potential emergence of OT in archetypal SOT stacks. Cr/CoFeB/MgO and W/CoFeB/MgO are chosen as the OT- and SOT-dominant systems, respectively. Systematic variations in each layer's thicknesses reveal that (i) Cr/CoFeB/MgO exhibits substantial torque comparable to or even exceeding that of the W/CoFeB/MgO stack when Cr and CoFeB layers are especially thick and (ii) the torque in W/CoFeB/MgO changes sign with increasing W and CoFeB thicknesses, suggesting a crossover of the dominant mechanism from SOT to OT. The findings clarify the opportunities and challenges of devices leveraging SOT and OT.

Current-Induced Field-Free Switching of Co/Pt Multilayer via Modulation of Interlayer Exchange Coupling and Magnetic Anisotropy

Current-induced field-free magnetic switching using spin–orbit torque has been an important topic for decades due to both academic and industrial interest. Most research has focused on introducing symmetry breakers, such as geometrical and compositional variation, pinned layers, and symmetry-broken crystal structures, which add complexity to the magnetic structure and fabrication process. We designed a relatively simple magnetic structure, composed of a [Co/Pt] multilayer and a Co layer with perpendicular and in-plane magnetic anisotropy, respectively, with a Cu layer between them. Current-induced deterministic magnetic switching was observed in this magnetic system. The system is advantageous due to its easy control of the parameters to achieve the optimal condition for magnetic switching. The balance between magnetic anisotropic strength and interlayer coupling strength is found to provide the optimal condition. This simple design and easy adjustability open various possibilities for magnetic structures in spin-based electronics applications using spin–orbit torque.

Materials, Processes, Devices and Applications of Magnetoresistive Random Access Memory

Abstract Magnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits. Although MRAM has achieved mass production, its manufacturing process still remains challenging, resulting in only a few semiconductor companies dominating its production. In this review, we delve into the materials, processes, and devices used in MRAM, focusing on both the widely adopted spin transfer torque (STT) MRAM and the next-generation spin-orbit torque (SOT) MRAM. We provide an overview of their operational mechanisms and manufacturing technologies. Furthermore, we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail. Then, the applications of MRAM in artificial intelligent hardware is introduced. Finally, we present an outlook on the future development and applications of MRAM.

Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-Based Spin-Orbit Torque Devices.

Nonvolatile memristors offer a salient platform for artificial neural network (ANN), yet the integration of different function and algorithm blocks into one hardware system remains challenging. Here we demonstrate the brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear and symmetrical long-term potentiation/depression process, resulting in a fast-training of the MNIST data set with the classification accuracy above 90%. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61% while simplifying the peripheral circuitry. Furthermore, the trainable activation function of SOT-N enables the implementation of the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline.

Harnessing synergy of spin and orbital currents in heavy metal/ferromagnet multilayers

Spin-orbitronics, exploiting electron spin and/or orbital angular momentum, offers a powerful route to energy-efficient spintronic applications. Recent research on orbital currents in light metals broadens the scope of spin-orbit torque (SOT). However, distinguishing and manipulating orbital torque in heavy metal/ferromagnet (HM/FM) remains a challenge, limiting the promising synergy of spin and orbital currents. Here, we design a HM/FM/FMSOC heterostructure and experimentally separate orbital torque contribution from spin torque by utilizing the distinct diffusion length of spin and orbital currents. Furthermore, we achieve the synergy of spin and orbital torques by controlling their relative strength, and obtain a 110% improvement in torque efficiency compared to the representative Pt/Co bilayer. Our findings not only contribute to a deeper understanding of SOT mechanisms and orbital current transport in HM/FM multilayers, but also highlight the promising prospect of orbital and spin torque synergy for optimizing the efficiency of next-generation spintronic devices.

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal GdxCo100−x. Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the GdxCo100−x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted GdxCo100−x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields

Spin–orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initialization problems, such as prolonged writing duration, and limitations, on the number of magnetic states. Consequently, a universal method for achieving multistate in perpendicular magnetic anisotropy (PMA)-based stacks remains elusive. Here, we propose a general experimental method for achieving multistate without any initialization step in SOT-driven magnetization switching by integrating an external out-of-plane magnetic field. Motivated by macrospin calculations coupled with micromagnetic simulations, which demonstrate the plausibility of magnetization state changes due to out-of-plane field integration, we experimentally verify multistate behavior in Pt/Co/Pt and W/Pt/Co/AlOx stacks. The occurrence of multistate behavior is attributed to intermediate domain states with Néel domain walls. We achieve repeatable 18 multistate configurations with a minimal reduction in retentivity through energy barrier measurements, paving the way for efficient analog computing.

Enhanced spin–orbit torque in Pt/Sm/Co/Ta heterostructures by interface alloying with light rare-earth Sm layer

Enhanced spin–orbit torque in Pt/Sm/Co/Ta heterostructures by interface alloying with light rare-earth Sm layer

Ultrafast antiferromagnetic switching of Mn2Au with laser-induced optical torques

Ultrafast manipulation of the Néel vector in metallic antiferromagnets most commonly occurs by generation of spin-orbit (SOT) or spin-transfer (STT) torques. Here, we predict another possibility for antiferromagnetic domain switching by using novel laser optical torques (LOTs). We present results of atomistic spin dynamics simulations from the application of LOTs for all-optical switching of the Néel vector in the antiferromagnet Mn2Au. The driving mechanism takes advantage of the sizeable exchange enhancement, characteristic of antiferromagnetic dynamics, allowing for picosecond 90 and 180-degree precessional toggle switching of the Néel vector with laser fluences on the order of mJ/cm2. A special symmetry of these novel torques greatly minimises the over-shooting effect common to precessional spin switching by SOT and STT methods. We demonstrate the opportunity for LOTs to produce deterministic, non-toggle switching of single antiferromagnetic domains. Lastly, we show that even with sizeable ultrafast heating by laser in metallic systems, there exist a large interval of laser parameters where the LOT-assisted toggle and preferential switchings in magnetic grains have probabilities close to one. The proposed protocol could be used on its own for all-optical control of antiferromagnets for computing or memory storage, or in combination with other switching methods to lower energy barriers and/or to prevent over-shooting of the Néel vector.

Driving skyrmions in flow regime in synthetic ferrimagnets

The last decade has seen significant improvements in our understanding of skyrmions current induced dynamics, along with their room temperature stabilization, however, the impact of local material inhomogeneities still remains an issue that impedes reaching the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with the aim of achieving high mobility and reduced skyrmion Hall effect. We consider Pt|Co|Tb multilayers of various thicknesses with antiferromagnetic coupling between the Co and Tb magnetization. The increase of Tb thickness in the multilayers reduces the total magnetic moment and increases the spin-orbit torques allowing to reach velocities up to 400 ms−1 for skyrmions with diameters of about 160 nm. We demonstrate that due to reduced skyrmion Hall effect combined with the edge repulsion of the magnetic track, the skyrmions move along the track without any transverse deflection. Further, by comparing the field-induced domain wall motion and current-induced skyrmion motion, we demonstrate that the skyrmions at the largest current densities present all the characteristics of a dynamical flow regime.

Control of spin–orbit torque-driven domain nucleation through geometry in chirally coupled magnetic tracks

The interfacial Dzyaloshinskii–Moriya interaction (DMI) can be exploited in magnetic thin films to realize lateral chirally coupled systems, providing a way to couple different sections of a magnetic racetrack and realize interconnected networks of magnetic logic gates. Here, we systematically investigate the interplay between spin–orbit torques, chiral coupling, and the device design in domain wall racetracks. We show that the current-induced domain nucleation process can be tuned between single-domain nucleation and repeated nucleation of alternate domains by changing the orientation of an in-plane patterned magnetic region within an out-of-plane magnetic racetrack. Furthermore, by combining experiments and micromagnetic simulations, we show that the combination of damping-like and field-like spin–orbit torques with DMI results in selective domain wall injection in one of two arms of a Y-shaped device depending on the current density. Such an element constitutes the basis of domain wall based demultiplexer, which is essential for distributing a single input to any one of the multiple outputs in logic circuits. Our results provide input for the design of reliable and multifunctional domain wall circuits based on chirally coupled interfaces.

Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO2 Gate Oxide

AbstractVoltage‐controlled magnetism (VCM) offers an efficient operating method for various spintronic applications, with reduced power consumption compared to conventional current‐driven technologies. Among the VCM mechanisms, magneto‐ionic control provides large modulation and non‐volatile characteristics. However, its operating speed is limited to a microsecond timescale due to slow ion migration, which must be improved for practical device applications. Here, the nanosecond operation of magneto‐ionic VCM in a Ta/CoFeB/MgO/AlOx structure by introducing an HfO2 gate oxide with resistive switching characteristics is demonstrated. By inducing soft breakdown in the HfO2 gate oxide, the coercivity of the perpendicularly magnetized CoFeB can be controlled by 20% with a 20 ns gate voltage of ≈7 MV cm−1. This nanosecond magneto‐ionic VCM performance is maintained after repeated operations up to 10 000 cycles. Further, by utilizing an HfO2 gate in a spin‐orbit torque (SOT) device, the ability to control field‐free SOT switching polarity with nanosecond gate voltages is demonstrated. These findings provide a novel pathway to realize nanosecond, non‐volatile VCM for low‐power spintronic applications.

Energy-efficient picosecond spin-orbit torque magnetization switching in ferro- and ferrimagnetic films.

Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques. Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the terahertz regime. However, little is known about the reversal mechanisms and energy requirements in the ultrafast switching regime. In this work we quantify the energy cost for magnetization reversal over seven orders of magnitude in pulse duration, in both ferromagnetic and ferrimagnetic samples, bridging quasi-static spintronics and femtomagnetism. To this end, we develop a method to stretch picosecond pulses generated by a photoconductive switch by an order of magnitude. Thereby we can create current pulses from picoseconds to durations approaching the pulse width available with commercial instruments. We show that the energy cost for spin-orbit torque switching decreases by more than an order of magnitude in all samples when the pulse duration enters the picosecond range. We project an energy cost of 9 fJ for a 100 × 100 nm2 ferrimagnetic device. Micromagnetic and macrospin simulations unveil a transition from a non-coherent to a coherent magnetization reversal with a strong modification of the magnetization dynamical trajectories as pulse duration is reduced. Our results show the potential for high-speed magnetic spin-orbit torque memories and highlight alternative magnetization reversal pathways at fast timescales.

Giant Hall Switching by Surface‐State‐Mediated Spin‐Orbit Torque in a Hard Ferromagnetic Topological Insulator

AbstractTopological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin‐orbit torque (SOT) and manipulate the magnetization with their unique topological surface states (TSS) with ultrahigh efficiency. Here, efficient SOT switching of a hard MTI, V‐doped (Bi,Sb)2Te3 (VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8 × 105 A cm−2, indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge‐state‐mediated to surface‐state‐mediated transport, thus enhancing the SOT effective field to (1.56 ± 0.12) × 10−6 T A−1 cm2 and the interfacial charge‐to‐spin conversion efficiency to 3.9 ± 0.3 nm−1. The findings establish VBST as an extraordinary candidate for energy‐efficient magnetic memory devices.

Pulse-shaping strategies for efficient switching of magnetic tunnel junctions by spin-orbit torque

Pulse-shaping strategies for efficient switching of magnetic tunnel junctions by spin-orbit torque

High switching ratio of antiferromagnetic order in thick sputtered Mn3+xSn1−x films by spin–orbit torque

Electrical manipulation of the antiferromagnetic states of Weyl semimetal Mn3Sn by current-induced spin–orbit torque (SOT) has attracted intensive attention recently, largely due to its potential advantage for high-density integration and ultrafast operation. In this study, the relation between the antiferromagnetic SOT switching ratio and the composition of Mn3+xSn1−x films was explored systematically. While SOT manipulation of ferromagnetic order has traditionally been confined to films just a few nanometers in thickness, our results indicate that current-induced SOT can effectively switch the antiferromagnetic order of sputtered Mn3+xSn1−x films with a thickness of up to 100 nm. Notably, a high electrical switching ratio of 83% was obtained in the optimized film with a composition of Mn3.1Sn0.9. The switching of the octupole polarization in thick Mn3Sn films may be accounted for by a seeded SOT mechanism. Joule heating of the Mn3Sn film close to the Néel temperature plays a key role in this switching process. Additionally, the factors influencing the switching ratio were further investigated. This work will deepen our understanding of the electrical switching mechanism of non-collinear antiferromagnetic order in Mn3Sn film and promote the development of antiferromagnetic spintronic devices.

Coherent spin wave excitation with radio-frequency spin–orbit torque

Spin waves, collective perturbations of magnetic moments, are both fundamental probes for magnetic physics and promising candidates for energy-efficient signal processing and computation. Traditionally, coherent propagating spin waves have been generated by radio frequency (RF) inductive Oersted fields from current-carrying electrodes. An alternative mechanism, spin–orbit torque (SOT), offers more localized excitation through interfacial spin accumulation but has been mostly limited to DC to kHz frequencies. SOT driven by RF currents, with potentially enhanced pumping efficiency and unique spin dynamics, remains largely unexplored, especially in magnetic insulators. Here, we conduct a comprehensive theoretical and computational investigation into the generation of coherent spin waves via RF-SOT in the prototypical yttrium iron garnet. We characterize the excitation of forward volume, backward volume, and surface modes in both linear and nonlinear regimes, employing single and interdigitated electrode configurations. We reveal and explain several unique and surprising features of RF-SOT compared to inductive excitation, including higher efficiency, distinct mode selectivity, and directional symmetry, a ∼3π/4 phase offset, reduced anharmonic distortion in the nonlinear regime, and the absence of second harmonic generation. These insights position RF-SOT as a promising new mechanism for future magnonic and spintronic applications.

Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Increasing the efficiency of spin–orbit torque (SOT) is of great interest in applications for magnetic random access memory and logic devices due to decreased energy consumption. Here, we present that the SOT efficiency of Pt/Co/Ta films with perpendicular magnetic anisotropy can be improved by swift high-energy heavy Fe11+ ion irradiation, which is an effective method to alter crystallinity, interface roughness, and defects in ferromagnet/heavy metal heterostructures. Specifically, the Pt/Co/Ta films show an optimal SOT efficiency at ion fluence around 1.0 × 1013 ions/cm2 with the largest spin Hall angles reaching 0.59, which is the largest improvement of spin Hall angle by ion irradiation compared to previous studies using light ions. We demonstrate that the increase in SOT efficiency arises from structural changes in the Pt layer due to ion irradiation-induced damage effects at proper fluence, while the decrease in SOT efficiency is mainly attributed to the restoration of Pt crystallinity induced by beam-heating effects at high fluence. This work demonstrates that an appropriate ion irradiation process could improve the SOT efficiency and the spin Hall angle, thereby providing a way to develop future SOT-based spintronic devices.