The results of numerical calculation of the electron ground state energy and electron density in tunneled InAs/GaAs quantum dots forming a simple cubic superlattice are presented. The calculation is carried out in the framework of a modified effective mass method, taking into account the microscopic (atomic) structure of individual quantum dots, without taking into account the spin-orbit interaction and deformation effects. The dependence of the electron binding energy on the radius of the quantum dot R. It is shown that in the region R < 27 Å the electron binding energy is proportional to R in degree three.