This study investigates the photovoltaic performance of bismuth vanadate (BiVO₄)/bismuth ferrite (BiFeO₃) heterostructures. By varying the pre-annealing temperature of the BiVO₄ layer, we have achieved significant enhancement in the open-circuit voltage (Voc) with the spontaneous formation of the polarized Bi4V2O11 interfacial layer. X-ray diffraction analysis confirms a pure rhombohedral distorted perovskite structure for BiFeO₃ and a monoclinic crystallographic nature for BiVO₄. SEM analysis exhibits a porous structure with small spherical grains in the BiVO₄ layer, with the dense and smooth surface of the BiFeO₃ layer. The heterostructures represented in a red-shifted absorption edge are compared with the individual materials, which indicates an improved light absorption. Tauc plot analysis has yielded the direct bandgap values of 1.88 eV and 1.83 eV for the BiVO4 annealing temperatures at 150 and 500°C, respectively. The overall power conversion efficiency (η) has remained low at 0.003% and 0.005%, demonstrating the potential of interfacial engineering to optimize the photovoltaic properties of BiVO₄/BiFeO₃ heterostructures.
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