Spectral Response Characteristics Research Articles

Characterization and Evaluation of Spectral Response of Targets in the municipality of Itapemirim, ES, by means of Remote Orbital Sensing

Characterization and Evaluation of Spectral Response of Targets in the municipality of Itapemirim, ES, by means of Remote Orbital Sensing

Development and optimization of the ratio vegetation index on the visible and infrared spectrum

This study aims to find a suitable vegetation index model to analyze the distribution of clove vegetation in Buleleng regency, Bali. Vegetation index model Ratio Vegetation Index (RVI) extracted from Landsat 8 was developed in the visible spectrum (l = 0.450 - 0.680 ?m) and infrared (l = 0.845 - 2.300 ?m). Development methods are carried out on the basis of the spectral reflectance response characteristics of the dominant electromagnetic waves from the visible and infrared spectra of vegetation. Created a multiple regression relationship results from scattergram that links RVI vegetation index with band 3 = B3, band 5 = B5, band 6 = B6, and band 7 = B7. Optimization strategy is carried out by dividing the development of RVI with a variable number factor. There are 4 forms of RVI vegetation index models from the development and optimization of the visible and infrared spectra. Of the 4 new vegetation index forms, which provide optimal results and close to extensive data from the Forestry and Plantation Service, Buleleng regency, Bali is RVInew4 = 0.0022 + 0.00142 * B3 + 0.00028 * B5 + 0.00054 * B6 + 0.00096 * B7. The area produced by this vegetation index model in analyzing the distribution of clove vegetation is 7667.82 ha. Is this area 99.40% of the average data area? the Forestry and Plantation Service, Buleleng regency, Bali in 2014, which is 7622.32 ha. The dominant distribution of clove vegetation is in the rare category with an area of 7441.74 ha.

GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance

Effects of GaAs/indium tin oxide (ITO)/Si junctions on III-V-on-Si multijunction solar cells are examined by fabricating and characterizing InGaP/GaAs/ITO/Si triple-junction (3J) solar cells. The 3J cells are fabricated by evaporating ≈ 100-nmthick ITO films on the surfaces of Si bottom cells and bonding the InGaP/GaAs double-junction (2J) subcells and the ITO films using surface-activated bonding technologies at room temperature. The current-voltage characteristics of 3J cells with p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaAs/ITO/n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si and n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaAs/ITO/n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si junctions are compared with those of an InGaP/GaAs/Si 3J cell. The parasitic resistance of the respective 3J cells is estimated by analyzing their characteristics in the dark. We find that the 3J cell with an n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaAs/ITO/n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si junction shows the lowest parasitic resistance, which is the origin of its lowest differential resistance at the open-circuit voltage and highest fill factor. This means that n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaAs/ITO/n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si junctions are promising for improving the performances of III-V-on-Si hybrid multijunction cells. The spectral response characteristics of these cells indicate that the thickness of the ITO films must be optimized.

Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.

In order to research spectral response characteristics of transmission-mode nanostructure aluminum gallium nitride (AlGaN) photocathodes, the AlGaN photocathodes materials with varied aluminum (Al) composition were grown by metalorganic chemical vapor deposition (MOCVD) and its optical properties were measured. The Al compositions of each AlGaN film of the photocathodes were analyzed from their adsorption properties curves; their thickness was also calculated by the matrix formula of thin-film optics. The nanostructure AlGaN photocathodes were activated with the Caesium-Oxygen (Cs-O) alternation, and after the photocathode was packaged in vacuum, their spectrum responses were measured. The experimental results showed that the trend of spectrum response curves first increased and then decreased along with the increasing of the incident light wavelength. The peak spectrum response value was 17.5mA/W at 255nm, and its quantum efficiency was 8.5%. The lattice defects near the interface of the AlGaN heterostructure could impede the electron motion crossing this region and moving toward the photocathode surface; this was a factor that reduces the electron emission performance of the photocathodes. Also, the experimental result showed that the thickness of each AlGaN layer affected the electron diffusion characteristics; this was a key factor that influenced the spectrum response performance.

In situ ultraviolet shock radiance measurements using GaN-on-sapphire photodetectors.

Gallium nitride (GaN)-on-sapphire photodetectors are used to measure the ultraviolet (UV) radiance behind a shock wave in support of atmospheric entry sensing technologies. DC spectral response characterization of the GaN-based photodetectors shows a peak response around 365 nm with an UV/visible rejection of an order of magnitude. To conduct in situ measurements of UV shock-layer radiation, the GaN-based photodetectors were installed, without protective packaging, in the test section of a shock tube. The measured UV radiation, in terms of incident optical power on the photodetectors, is in excellent agreement with average UV radiation measured by the shock tube facility spectrometers. Furthermore, the device response after being subjected to the shock wave is unaltered, suggesting that the GaN-based material platform is suitable for implementation in aerospace and other harsh environment sensing applications.

Spectral response characteristics of transmission-mode alkali telluride photocathodes working from vacuum-ultraviolet to ultraviolet band

In order to characterize the spectral response of transmission-mode alkali telluride photocathodes, a spectral response measurement system for image intensifiers working from the vacuum-ultraviolet to ultraviolet band is developed. Using this system, the transmittance curves of usual window materials such as quartz, MgF2, and sapphire selected to prepare alkali telluride photocathodes are measured. In addition to the transmittance test function, the spectral response of image intensifiers based on transmission-mode alkali telluride photocathodes, such as Cs2Te, Rb2Te, Cs-K-Te, and Rb-K-Te photocathodes, under the excitation light from 115 to 400 nm is measured. The measured results show that the longwave cutoff wavelength of the Rb2Te photocathode is 313 nm, while that of the Cs2Te photocathode is 342 nm, which could be ascribed to the reduced cathode work function, inversely proportional to the atomic number of the alkali element in uni-alkali telluride photocathodes. Besides, the spectral response values of Cs-K-Te and Rb-K-Te photocathodes are greater than those of Cs2Te and Rb2Te photocathodes, and this case is similar to the multialkali effect of alkali antimonide photocathodes. The cutoff wavelength can get shorter through the combination with an additional K element. Compared with the Rb-K-Te photocathode with the shorter cutoff wavelength, the Cs-K-Te photocathode can achieve higher sensitivity.

Instrumental Response Model and Detrending for the Dark Energy Camera

We describe the model for mapping from sky brightness to the digital output of the Dark Energy Camera (DECam) and the algorithms adopted by the Dark Energy Survey (DES) for inverting this model to obtain photometric measures of celestial objects from the raw camera output. This calibration aims for fluxes that are uniform across the camera field of view and across the full angular and temporal span of the DES observations, approaching the accuracy limits set by shot noise for the full dynamic range of DES observations. The DES pipeline incorporates several substantive advances over standard detrending techniques, including principal-components-based sky and fringe subtraction; correction of the “brighter-fatter” nonlinearity; use of internal consistency in on-sky observations to disentangle the influences of quantum efficiency, pixel-size variations, and scattered light in the dome flats; and pixel-by-pixel characterization of instrument spectral response, through combination of internal-consistency constraints with auxiliary calibration data. This article provides conceptual derivations of the detrending/calibration steps, and the procedures for obtaining the necessary calibration data. Other publications will describe the implementation of these concepts for the DES operational pipeline, the detailed methods, and the validation that the techniques can bring DECam photometry and astrometry within mmag and mas, respectively, of fundamental atmospheric and statistical limits. The DES techniques should be broadly applicable to wide-field imagers.

Percentage cover, biomass, distribution, and potential habitat mapping of natural macroalgae, based on high-resolution satellite data and in situ monitoring, at Libukang Island, Malasoro Bay, Indonesia

In this study, we combined remote sensing data and in situ observations to explore the potential habitats of macroalgae at Libukang Island, Indonesia. High-resolution satellite images from the GeoEye-1 were used to estimate and to map the geomorphological structures together with macroalgal species in the study area. Seasonal variations of percentage cover and biomass of macroalgae associated with substrates were investigated in May and November 2014, and June 2015, using quadrats as sampling unit. A total of nine common genera were found in the study area with three dominant genera: Sargassum, Padina, and Turbinaria. Most of macroalgae was observed in the eastern part of the Island, on several substrate types and particular oceanographic conditions (wave and current). Mean biomasses of Sargassum and Padina were high in May (1189.6 ± 455 and 166.7 ± 15.4 g DW.m−2, respectively), while the biomass of Turbinaria was high in November (3245 ± 599.8 g DW.m−2). The map accuracy of image classification for all typology substrates was 74.19%. Overall, approximately 62.3% of the total study area can be considered as potential for natural macroalgae habitats. Spectral response characteristic of shallow water substrates at study area based on GeoEye-1 is also presented. The results of this study exhibit a potential utilization of natural macroalgae in the study area, and provide information for a possible diversification of the use of macroalgae in Indonesia. The method could be useful for habitat management and future biomonitoring in the study area or other similar areas in Indonesia.

Near‐Infrared and Short‐Wavelength Infrared Photodiodes Based on Dye–Perovskite Composites

Organohalide perovskites have emerged as promising light‐sensing materials because of their superior optoelectronic properties and low‐cost processing methods. Recently, perovskite‐based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photodetection bandwidth in perovskite‐based photodetectors has so far been limited to the near‐infrared regime owing to the relatively wide band gap of hybrid organohalide perovskites. In particular, short‐wavelength infrared photodiodes operating beyond 1 µm have not yet been realized with organohalide perovskites. In this study, narrow band gap organic dyes are combined with hybrid perovskites to form composite films as active photoresponsive layers. Tuning the dye loading allows for optimization of the spectral response characteristics and excellent charge‐carrier mobilities near 11 cm2 V−1 s−1, suggesting that these composites combine the light‐absorbing properties or IR dyes with the outstanding charge‐extraction characteristics of the perovskite. This study demonstrates the first perovskite photodiodes with deep near‐infrared and short‐wavelength infrared response that extends as far as 1.6 µm. All devices are solution‐processed and exhibit relatively high responsivity, low dark current, and fast response at room temperature, making this approach highly attractive for next‐generation light‐detection techniques.

Opto-capacitive study of n-ZnO/p-Si heterojunctions elaborated by reactive sputtering method: Solar cell applications

Thin films of ZnO were deposited on glass and p-Si substrates by DC reactive sputtering, at different deposition times. The physical properties of the films were investigated by X-ray diffraction, UV–visible transmittance and four-probe measurements. The results show the improvement of the crystallinity, the transparency and the conductivity of films with increasing the thickness. The dark current-voltage, the capacitance-voltage and the spectral response characteristics of n-ZnO/p-Si heterojunctions revealed that the potential barrier profile and the interface state change strongly with the film thickness, which leads to an important difference in the carriers transport phenomena. The good rectifying behaviors were obtained for the thinner ZnO films (16–50nm). Under illumination, the hetero-junctions with thinner films show a good photosensitivity in the visible range wavelength (~425nm), while, the hetero-junctions with thick ZnO films exhibit a good photosensitivity in the visible and NIR regions (~1100nm). The least thick ZnO film (16nm) shows a photovoltaic behavior with a short circuit current density (Jsc) of ~1mA/cm2 and an open voltage (Voc) of ~0.4V.

Spectral response characteristics and identification of typical plant species in Ebinur lake wetland national nature reserve (ELWNNR) under a water and salinity gradient

The spectral characteristics of variable selection are particularly important for wetland vegetation mapping. In the present study, we combined soil salt and water content with spectral data collected in the Ebinur Lake Wetland National Nature Reserve (ELWNNR) in Western China to understand the effects of soil salt and water content on plant spectra. The results showed the following: (1) the distribution of plants reflect the macroscopic response characteristics of plants on water and salt environment; (2) a certain response rule exists between the spectra of different plants under a water and salt gradient, e.g., with increase in water and salt gradient, the spectral reflectivity of salt-dilution plant decreases, and salt-exclusion plant increases; (3) a response pattern is formed between the “trilateral” characteristics of plant spectrum and water salt gradient. With the increase of salinity gradient, the “red edge”, “blue edge”, and “yellow edge” shows the most obvious changes in the 0.8 order derivatives, e.g., when the soil salt content was range from 4.2 to 8.8g/kg, the spectral characteristics of the plants were the most obvious; (4) Fisher linear discriminant analysis found that during fractional order to integer promotion, classification accuracy of the 0.8 order derivative was higher than the integer order derivatives. Therefore, the “trilateral” characteristics of plants spectra in the 0.8 order derivatives were more accurate than the first derivative. The 0.8 order derivative was more advantageous to distinguishing plants, with a classification accuracy of 89.37%, indicating the potential of 0.8-order derivative for hyperspectral remote sensing of plants. This study introduced a fractional order derivative to hyperspectral remote sensing for the quantitative analysis of differences in the vegetation spectrum, provided new insights to the research and application of vegetation remote sensing.

Characterization of spectral responses of dissolved organic matter (DOM) for atrazine binding during the sorption process onto black soil

This study was aim to investigate the interaction between soil-derived dissolved organic matter (DOM) and atrazine as a kind of pesticides during the sorption process onto black soil. According to the experimental data, the adsorption capacity of Soil + DOM, Soil and DOM were 41.80, 31.45 and 9.35 mg kg−1, separately, which indicated that DOM significantly enhanced the adsorption efficiency of atrazine by soil. Data implied that the pseudo-second-order kinetic equation could well explain the adsorption process. The adsorption isotherms (R2 > 0.99) had a satisfactory fit in both Langmuir and Freundlich models. Three-dimensional excitation-emission matrix (3D-EEM), synchronous fluorescence, two-dimensional correlation spectroscopy (2D-COS) and Fourier transform infrared spectroscopy (FT-IR) were selected to analyze the interaction between DOM and atrazine. 3D-EEM showed that humic acid-like substances were the main component of DOM. The fluorescence of DOM samples were gradually quenched with the increased of atrazine concentrations. Synchronous fluorescence spectra showed that static fluorescence quenching was the main quenching process. 2D-COS indicated that the order of the spectral changes were as following: 336 nm > 282 nm. Furthermore, the fluorescence quenching of humic-like fraction occurred earlier than that of protein-like fraction under atrazine surroundings. FT-IR spectra indicated that main compositions of soil DOM include proteins, polysaccharides and humic substances. The findings of this study are significant to reveal DOM played an important role in the environmental fate of pesticides during sorption process onto black soil and also provide more useful information for understanding the interaction between DOM and pesticides by using spectral responses.

Comparison of SensL and Hamamatsu 4×4 channel SiPM arrays in gamma spectrometry with scintillators

The market of Silicon Photomultipliers (SiPMs) consists of many manufacturers that produce their detectors in different technology. Hamamatsu (Japan) and SensL (Ireland) seems to be the most popular companies that produce large SiPM arrays. The aim of this work is characterization and comparison of 4×4 channel SiPM arrays produced by these two producers. Both of the tested SiPMs are made in through-silicon via (TSV) technology, consist of 16, 3×3mm avalanche photodiode (APD) cells and have fill factor slightly above 60%. The largest difference is a single APD cell size and hence total number of APD cells (55,424 for Hamamatsu, 76,640 for SensL). In the case of SensL SiPM, its spectral response characteristics is shifted slightly toward shorter wavelengths with maximum at 420nm (450nm for Hamamatsu). The presented measurements cover selection of the SiPM optimum operating voltage (in respect to energy resolution), verification of the excess noise factor and check of the linearity characteristics. Moreover, the gamma spectrometry with LSO, BGO and CsI:Tl scintillators together with pulse characteristics for these crystals (rise time and fall time) is reported, as well as temperature dependence. The presented measurements show better performance of the SensL array comparing to the Hamamatsu detector.

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μFE > 64.4 cm2/Vs, on/off ratio > 106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2 phototransistors from ~495 nm (blue) to ~590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2 for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.

Visible-blind ultraviolet photodetector based on p-Cu2CdSnS4/n-ZnS heterojunction with a type-I band alignment

A visible-blind ultraviolet photodetector based on a p-Cu2CdSnS4/n-ZnS (CCTS/ZnS) heterojunction was fabricated by the radio frequency magnetron sputtering technique. Mo and In metals were used as p-type and n-type contact electrodes, respectively. Current−voltage measurement of the CCTS/ZnS heterojunction photodetector showed a good rectifying behavior. The photodetector showed a peak photocurrent at 330 nm and a sharp photocurrent edge at about 380 nm, suggesting a typical visible-blind characteristic. X-ray photoelectron spectroscopy measurements and first-principles calculations indicate that the CCTS/ZnS heterojunction has a type-I band alignment. The conduction-band offset leads to the barrier that inhibits the drifting of photo-generated electrons from p-CCTS to n-ZnS layer, well interpreting the spectral response characteristics of the device.

Seismic Performance Assessment of a Mid-Rise RC Building subjected to 2016 Gyeongju Earthquake

In this paper, seismic performance assessment has been examined for a mid-rise RC building subjected to 2016 Gyeongju earthquake occurred in Korea. For the purpose of the paper, 2D external and internal frames in each direction of the building have been employed in the present comparative analyses. Nonlinear static pushover analyses have been conducted to estimate frame capacities. Nonlinear dynamic time-history analyses have also been carried out to examine demands for the frames subjected to ground motions recorded at stations in near of Gyeongju and a previous earthquake ground motion. Analytical predictions demonstrate that maximum demands are significantly affected by characteristics of both spectral acceleration response and spectrum intensity over a wide range of periods. Further damage potential of the frames has been evaluated in terms of fragility analyses using the same ground motions. Fragility results reveal that the ground motion characteristics of the Gyeongju earthquake have little influence on the seismic demand and fragility of frames.

International round-robin inter-comparison of dye-sensitized and crystalline silicon solar cells

An international round-robin inter-comparison of the spectral responsivity (SR) and current-voltage (I-V) characteristics for dye-sensitized solar cells (DSCs) and crystalline silicon solar cells is reported for the first time. The crystalline silicon cells with various spectral responsivities were also calibrated by AIST to validate this round-robin activity. On the basis of the remarkable consistency in Pmax (within ±1.4% among participants) and Isc (within ±1.2% compared to the primary calibration of AIST) of the silicon specimens, the discrepancy in the SR and photovoltaic parameters of five DSCs among three national laboratories can be verified and diagnosed. Recommendations about sample packages, SR and I-V measurement methods as well as the inter-comparison protocol for improving the performance characterization of the mesoscopic DSCs are presented according to the consolidated data and the experience of the participants.

Spectral response characteristics of novel ion-implanted planar GaAs blocked-impurity-band detectors in the terahertz domain

Spectral response characteristics of novel planar GaAs blocked-impurity-band (BIB) detector with the absorption region formed by ion implantation have been investigated. Processing technology and simulation method are described in detail. For obtaining a deep and flat implantation region, four-time-implantation scheme with different implantation energy and dose is proposed. Our results show that the novel planar GaAs BIB detector can response radiations with wavelength range from 165 to 400 μm, corresponding to frequency range from 750 GHz to 1.8 THz, which is perfectly suitable for the security application. An empirical formula is proposed to predict the dependence of spectral width on the depth of absorption region. It is demonstrated that a trade-off between responsivity and dark current has to be made for the optimal depth of absorption region.

Hybrid photovoltaic structures based on amorphous silicon and P3HT:PCBM/PEDOT:PSS polymer semiconductors

Hybrid thin film photovoltaic structures, based on hydrogenated silicon (Si:H), organic poly(3-hexythiophene):methano-fullerenephenyl-C61-butyric-acid-methyl-ester (P3HT:PCBM) and poly(3,4ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) films, have been fabricated. Organic semiconductor thin films were deposited by spin-coating technique and were exposed to radio frequency plasma enhanced chemical vapor deposition (RF PECVD) of Si:H films at deposition temperature Td = 160 °C. Different types of structures have been investigated: H1) ITO/(p)SiC:H /P3HT:PCBM/(n) Si:H, H2) ITO/PEDOT:PSS/(i)Si:H/(n) Si:H and H3) ITO/PEDOT:PSS/P3HT:PCBM/(i)Si:H/(n)Si:H. Short circuit current density spectral response and current-voltage characteristics were measured for diagnostic of the photovoltaic performance. The current density spectral dependence of hybrid structures which contains organic layers showed improved response (50–80%) in high photon energy range (hν ≈ 3.1–3.5 eV) in comparison with Si:H reference structure. An adjustment in the absorbing layer thickness and in the contact material for ITO/PEDOT:PSS/(i)Si:H/(n)Si:H structure, resulted in a remarkably high short circuit current density (as large as 17.74 mA/cm2), an open circuit voltage of 640 mV and an efficiency of 3.75%.

Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current–voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current–voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.