Extended-x-ray-absorption-fine-structure (EXAFS) studies above the nitrogen (\ensuremath{\sim}400 eV) and oxygen (\ensuremath{\sim}535 eV) $K$ absorption edges are reported for silicon nitride, silicon dioxide, and oxygen on a Si (111) surface. Measurements were carried out using soft-x-ray synchrotron radiation and employing the surface-sensitive secondary-electron-yield detection technique. EXAFS spectra of bulk ${\mathrm{Si}}_{3}$${\mathrm{N}}_{4}$ and Si${\mathrm{O}}_{2}$ are analyzed to test the reliability of theoretical phase shifts and to derive experimental ones for the N-Si and O-Si systems. It is found that nearest-neighbor distances from low-$Z$ atoms can be determined to an accuracy of \ensuremath{\lesssim}0.03 \AA{} and second-nearest-neighbor separations to \ensuremath{\lesssim}0.05 \AA{} using calculated phase shifts. The surface EXAFS spectrum of one of the initial oxidation stages (characterized by a Si $2p$ chemical shift of 2.5 eV) reveals that the O-Si bond length is slightly (0.04 \AA{}) larger than in Si${\mathrm{O}}_{2}$. Analysis of the relative EXAFS amplitudes provides information on the oxygen-bonding geometry on the Si (111) surface. The importance and advantage of polarization-dependent surface EXAFS studies are discussed.
Read full abstract