Non-classical Light Sources Research Articles

Enhancement of the two-photon blockade effect via Van der Waals interaction

We theoretically investigate the influence of the Van der Waals interaction on the two-photon blockade phenomenon with the corresponding photon correlation functions g(2)(0) > 1 and g(3)(0) < 1 in a two-atom cavity-QED system, where two three-level ladder-type atoms are coherently driven by a pumping field and a coupling field simultaneously. Choosing a specific frequency of the coupling field, we show the energy splitting phenomenon caused by electromagnetically induced transparency. Correspondingly, the two-photon blockade phenomenon can be achieved near the two-photon resonant frequency. Using the Van der Waals interaction between the Rydberg states of the two atoms, we also show that the two-photon blockade can be improved when two atoms radiate in-phase or out-of-phase. As a result, two photons leak from the cavity simultaneously, but the third photon is blockaded. These results presented in this study hold potential applications in manipulating photon states and generating nonclassical light sources.

Trigonal Copper(I) Complexes with Cyclic (Alkyl)(amino)carbene Ligands for Single-Photon Near-IR Triplet Emission.

Molecular near-IR (NIR) triplet-state emitters are of importance for the development of new, organic-electronics-based telecommunication technologies as optical fibers operating in the corresponding spectral bands allow for data transfer over much longer distances due to the significantly lower attenuation. However, achieving such low-energy triplet excited states with good radiative rate constants is very challenging, and studies regarding the single-photon emission of organometallics in this energy range are scarce. We have prepared a series of trigonal CuI CAAC complexes bearing chelating ligands with O, N, S, and Se donor atoms and studied their photophysical properties in this context. The compounds show weak low-energy absorption in solution between 400 and 500 nm due to mixed Cu → CAAC 1MLCT/LLCT states, resulting in yellow-green to orange appearance, which we have also correlated to the 15N NMR resonances of the π-accepting carbene ligand. In the solid state, phosphorescence from dominant 3(Cu → CAAC) CT states is observed at room temperature. The emission of the complexes is bathochromically shifted in comparison to structurally related linearly coordinated copper(I) CAAC complexes due to structural reorganization in the excited state to a T-shape. For [Cu(dbm)(CAACMe)], the broad phosphorescence with outstanding λmax = 760 nm tailors out to ca. 1100 nm and leads to its proof-of-concept application as a nonclassical single-photon light source, constituting key functional units for the implementation of tap-proof data transfer.

Spontaneous parametric down-conversion in bottom-up grown lithium niobate microcubes

Nonclassical light sources are highly sought-after as they are an integral part of quantum communication and quantum computation devices. Typical sources use bulk nonlinear crystals that rely on stringent phase-matching conditions, limiting the operating wavelength and bandwidth. In this work, we demonstrate the generation of photon pairs from a free-standing lithium niobate microcube at the telecommunication wavelength of 1.56 µm through the spontaneous parametric down-conversion process. The maximum photon pair generation rate obtained from a single microcube with the size of 3.6 µm is 490 Hz, resulting in an efficiency of 20.6 GHz/Wm, which is three orders of magnitude larger than the efficiency of biphoton generation in bulk nonlinear crystals. The microcubes are synthesized through a solvothermal method, offering the possibility for scalable devices via bottom-up assembly on any substrates. Our work constitutes an important step forward in the realization of compact nonclassical light sources with a wide bandwidth for various quantum applications.

Fast dispersion tailoring of multimode photonic crystal resonators

We introduce a numerical procedure which permits to drastically accelerate the design of multimode photonic crystal resonators. Specifically, we demonstrate that the optical response of an important class of such nanoscale structures is reproduced accurately by a simple, one-dimensional model, within the entire spectral range of interest. This model can describe a variety of tapered photonic crystal structures. Orders of magnitude faster to solve, our approach can be used to optimize certain properties of the nanoscale cavity. Here we consider the case of a nanobeam cavity, where the confinement results from the modulation of its width. The profile of the width is optimized, in order to flatten the resonator dispersion profile (so that all modes are equally spaced in frequency). This result is particularly relevant for miniaturizing parametric generators of non-classical light, optical nano-combs and mode-locked laser sources. Our method can be easily extended to complex geometries, described by multiple parameters.

Broadband strong photon correlations of frequency-resolved single-atom resonance fluorescence generated by two equal-frequency laser fields with different amplitudes

Frequency-resolved photon statistics of resonance fluorescence generated from a two-level system driven by a strong laser field and a weak laser field with equal frequencies are studied. The frequency resolution of fluorescent radiation is described by quantum filtering dynamics, which is simulated theoretically by two single-mode quantum optical cavities with tunable frequencies to scan the incident fluorescent radiation. By calculating the two-photon intensity–intensity correlation functions in terms of the cavity modes, we demonstrate that two-color strong correlations of resonance fluorescence can be generated not only between the opposite sidebands, but also between the central band and one of the sidebands: although both sidebands are broadened due to the perturbation of the weak laser field on the strong-field dressed atom. We emphasize that these properties are in contrast to the conventional case of the standard single-atom Mollow triplet. Moreover, if the resonance frequencies of the two filtering cavities are tuned appropriately, broadband two-color strong correlations are predicted, and the physical origin is revealed from the perspective of quantum interference of photon emission dynamics. This can be considered as a feasible scheme for the design of broadband non-classical light sources, and may be beneficial to the quantum precise detection of atomic and molecular dynamics via quantum optical spectroscopy.

Generation and modulation of non-classical light in a strongly coupled photon–emitter system

Non-classical light, especially its single photon and squeezing properties, plays a fundamental role in on-chip quantum networks. The single photon property has been widely studied in photonic cavities including photonic crystals (PhCs), micropillar cavities, nanowires, and plasmonic cavities. However, the generation and modulation of squeezing light in nanophotonic cavities remain to be explored. Here, we theoretically demonstrate a strongly coupled PhC–plasmonic-emitter system enabling non-classical light generation and modulation. The hybridization of a PhC waveguide and an Ag nanoparticle forms a band-edge mode with a narrow linewidth and a strong confined field, which enables strong light–emitter interaction, further resulting in simultaneous generation of squeezing and single photon properties for on-chip applications. Non-classical light emission can be modulated with the detuning between the band-edge mode and the emitter. The emission is efficiently channeled by the PhC waveguide with a high coupling efficiency, accompanying unidirectional transmission under excitation by a circularly polarized emitter. The system provides a candidate for tunable and bifunctional on-chip non-classical light sources at the nanoscale and may offer more possibilities to build versatile quantum networks.

InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications

Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform

Abstract The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs (>1 μm) limits their compatibility with most photonic resonator types. Here, we report on the metal–organic vapor-phase epitaxy (MOVPE) growth of a novel InGaAs MMB with a nonlinear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. This allows us to achieve the necessary transition of the lattice constant and to provide a smooth surface for QD growth within 180 nm. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom nonclassical light sources as a key component of photonic quantum technologies.

Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device

The well-established silicon-on-insulator platform is very promising for large-scale integrated photonic and quantum photonic technologies due to the mature manufacturing technology and integration density. Here, we present an efficient and stable fiber-to-chip coupling, which enables the injection of single photons from telecom quantum dots into a silicon-on-insulator photonic chip. Two additional fibers further couple the chip to single-photon detectors. The approach chosen to achieve steady fiber-chip coupling is based on the use of grating couplers steadily packaged with angled single-mode fibers. Using this technique, coupling efficiencies between the fiber and the SOI chip as high as 69.1% per grating coupler (including the taper losses) are reached. The effective interface between the quantum light generated by quantum dots and the silicon components is verified via the measurement of the second-order correlation function using a Hanbury–Brown and Twiss setup. With g(2)(0)=0.051±0.001, it clearly proves the single-photon nature of the injected QD photons. This demonstrates the reliability of the interfacing method and opens the route to employ telecom quantum dots as non-classical light sources with high complexity silicon photonic functionalities.

Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources.

In the past few years remarkable interest has been kindled by the development of nonclassical light sources and, in particular, of single-photon emitters (SPE), which represent fundamental building blocks for optical quantum technology. In this Letter, we analyze the stability and electronic properties of an InSe monolayer with point defects with the aim of demonstrating its applicability as an SPE. The presence of deep defect states within the InSe band gap is verified when considering substitutional defects with atoms belonging to group IV, V, and VI. In particular, the optical properties of Ge as substitution impurity of Se predicted by solving the Bethe–Salpeter equation on top of the GW corrected electronic states show that transitions between the valence band maximum and the defect state are responsible for the absorption and spontaneous emission processes, so that the latter results in a strongly peaked spectrum in the near-infrared. These properties, together with a high localization of the involved electronic states, appear encouraging in the quest for novel SPE materials.

Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate.

We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.

Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating.

The combination of semiconductor quantum dots with photonic cavities is a promising way to realize nonclassical light sources with state-of-the-art performances regarding brightness, indistinguishability, and repetition rate. Here we demonstrate the coupling of InGaAs/GaAs QDs emitting in the telecom O-band to a circular Bragg grating cavity. We demonstrate a broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside and detuned from the cavity mode, respectively. In the first case, a Purcell enhancement of 4 is attained. For the latter case, an end-to-end brightness of 1.4% with a brightness at the first lens of 23% is achieved. Using p-shell pumping, a combination of high count rate with pure single-photon emission (g(2)(0) = 0.01 in saturation) is achieved. Finally, a good single-photon purity (g(2)(0) = 0.13) together with a high detector count rate of 191 kcps is demonstrated for a temperature of up to 77 K.

Nanoscale continuous quantum light sources based on driven dipole emitter arrays

Regular arrays of two-level emitters at distances smaller than that of the transition wavelength collectively scatter, absorb, and emit photons. The strong inter-particle dipole coupling creates large energy shifts of the collective delocalized excitations, which generates a highly nonlinear response at the single and few photon level. This should allow us to implement nanoscale non-classical light sources via weak coherent illumination. At the generic tailored examples of regular chains or polygons, we show that the fields emitted perpendicular to the illumination direction exhibit a strong directional confinement with genuine quantum properties as antibunching. For short interparticle distances, superradiant directional emission can enhance the radiated intensity by an order of magnitude compared to a single atom focused to a strongly confined solid angle but still keeping the anti-bunching parameter at the level of g(2)(0)≈10−2.

Resonance fluorescence of single In(Ga)As quantum dots emitting in the telecom C-band

An emission wavelength around 1550 nm (telecom C-band) is highly appealing for nonclassical light sources, among others, due to the absorption minimum in standard glass fibers. In particular, semiconductor quantum dots at this wavelength promise to provide the outstanding results achieved with this emitter type in the near-infrared spectral region. Here, we study resonance fluorescence from InAs/GaAs quantum dots emitting in the telecom C-band under continuous wave and pulsed excitation. For the prior case, the quantum dot is excited in the strong driving regime and the characteristic Mollow triplet is observed allowing to draw conclusions on the nature and quantitative influence of different decoherence mechanisms on the emission. Furthermore, under pulsed excitation, highly pure single-photon emission (g(2)(0)=0.023 ± 0.019) is demonstrated and a measurement of the photon indistinguishability (VTPI=0.144 ± 0.015; full width at half maximum of the time window for post-selection of (305 ± 33)ps with an associated maximally attainable value VTPI,p=0.955) is presented. In the process of making the emission properties of telecom quantum dots comparable to their well-established counterparts emitting in the near-infrared spectral region, these results represent a benchmark and provide valuable information for future optimization of sample structures.

Quantum-Optical Spectrometry in Relativistic Laser–Plasma Interactions Using the High-Harmonic Generation Process: A Proposal

Quantum-optical spectrometry is a recently developed shot-to-shot photon correlation-based method, namely using a quantum spectrometer (QS), that has been used to reveal the quantum optical nature of intense laser–matter interactions and connect the research domains of quantum optics (QO) and strong laser-field physics (SLFP). The method provides the probability of absorbing photons from a driving laser field towards the generation of a strong laser–field interaction product, such as high-order harmonics. In this case, the harmonic spectrum is reflected in the photon number distribution of the infrared (IR) driving field after its interaction with the high harmonic generation medium. The method was implemented in non-relativistic interactions using high harmonics produced by the interaction of strong laser pulses with atoms and semiconductors. Very recently, it was used for the generation of non-classical light states in intense laser–atom interaction, building the basis for studies of quantum electrodynamics in strong laser-field physics and the development of a new class of non-classical light sources for applications in quantum technology. Here, after a brief introduction of the QS method, we will discuss how the QS can be applied in relativistic laser–plasma interactions and become the driving factor for initiating investigations on relativistic quantum electrodynamics.

Antibunched photon-pair source based on photon blockade in a nondegenerate optical parametric oscillator

Nonclassical light sources, such as correlated photon-pairs, play an important role in quantum optics and quantum information processing systems. This study proposes a process to generate antibunched photon-pairs in a nondegenerate optical parametric oscillator. It is found that when the parameters of the system satisfy certain conditions, the generated photons in subharmonic modes exhibit a strong antibunching behavior and are strongly correlated with one another. In particular, the average photon-pair number is resonantly enhanced. It is also observed that the conventional photon blockade contributes to this phenomenon. In addition, it is interesting to note that fundamental mode photons can blockade the subharmonic mode photons. We refer to this phenomenon as a heterogeneous photon blockade.

Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range

We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sources. The photoluminescence (PL) experiments reveal that the GaSb QDs have an indirect–direct bandgap crossover at telecom wavelengths. This is due to the alignment of the Γ and L valleys in the conduction band as a result of the quantum confinement controlled by the dimensions of the nanostructure. We show that in the direct bandgap regime close to 1.5 µm wavelength, the GaSb QDs have a type I band alignment and exhibit excitonic emission with narrow spectral lines and very low inhomogeneous broadening of PL emission owing to the high material quality and dimensional uniformity. These properties are extremely promising in terms of applications in infrared quantum optics and quantum photonic integration.

Tailoring the Geometry of Bottom-Up Nanowires: Application to High Efficiency Single Photon Sources.

For nanowire-based sources of non-classical light, the rate at which photons are generated and the ability to efficiently collect them are determined by the nanowire geometry. Using selective-area vapour-liquid-solid epitaxy, we show how it is possible to control the nanowire geometry and tailor it to optimise device performance. High efficiency single photon generation with negligible multi-photon emission is demonstrated using a quantum dot embedded in a nanowire having a geometry tailored to optimise both collection efficiency and emission rate.

Tailored Subcycle Nonlinearities of Ultrastrong Light-Matter Coupling.

We explore the nonlinear response of tailor-cut light-matter hybrid states in a novel regime, where both the Rabi frequency induced by a coherent driving field and the vacuum Rabi frequency set by a cavity field are comparable to the carrier frequency of light. In this previously unexplored strong-field limit of ultrastrong coupling, subcycle pump-probe and multiwave mixing nonlinearities between different polariton states violate the normal-mode approximation while ultrastrong coupling remains intact, as confirmed by our mean-field model. We expect such custom-cut nonlinearities of hybridized elementary excitations to facilitate nonclassical light sources, quantum phase transitions, or cavity chemistry with virtual photons.

Spontaneous PT-symmetry breaking in lasing dynamics

Parity-time (PT) symmetric lasers exploit the modulation of optical gain and loss and have led to important fundamental demonstrations in non-Hermitian physics. The current theoretical analysis of PT-symmetric laser physics is performed on the basis of the adiabatic elimination of the medium polarization. This approximation doesn’t hold true for a more general optical system with strong photon-particle interactions, where the Rabi oscillation of active particles plays a non-negligible role in the lasing action. Here, we propose a model that takes into account the internal dynamics of active particles and numerically investigate the PT symmetry of macroscopic- and microscopic-sized laser systems that operate in the strong-coupling regime. The distinct phase diagrams are drawn according to the features of intracavity photon numbers and emission spectra. Our work extends the PT-symmetric optics from the weak- to the strong-coupling limit, potentially paving the way towards nonclassical PT-symmetric light sources for integrated photonic networks and ultrasensitive sensors.