SOS Technology Research Articles

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25 Articles

Published in last 50 years

Articles published on SOS Technology

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A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology

A new SOS technology utilizing the non-doped silicon film without any process steps to dope impurities deep into the film under the gate is presented. The minimal junction capacitance is realized even with the shallow junction depth. The small source-drain leakage current is obtained. The threshold voltage is controlled by the film thickness. The simplified process is realized. A 1 K-bit RAM is fabricated with this technology. The access time of the SOS-RAM is faster than that on bulk-silicon by a factor of 1.5 at the same power supply voltage VCC. The shortest access times of 20 ns and 40 ns are measured at VCC=10 and 5 V, respectively. The active power dissipation is 65% of that on bulk-silicon. The quiescent power dissipation of the SOS-RAM is obtained as 30 µW at VCC=5 V.

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Japanese Journal of Applied Physics
Jan 1, 1979
Nobuo Sasaki + 4

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Foreword SOS special issue&#8212;SOS technology

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IEEE Transactions on Electron Devices
Aug 1, 1978
F.B Micheletti

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Flame Fusion Growth of Spinel and Sapphire Crystals for ESFI SOS Technology

A modified flame fusion process has been developed to grow crystals at low cost for use as substrate for the ESFI® SOS technology. Mg‐Al spinel and sapphire single crystals with diameters up to 50 mm have been grown. Differences between both kinds of crystals are described concerning the behavior during the widening phase and the cooling phase of the growth process. Crystalline perfection was investigated in both crystals by the x‐ray topography.

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