Single crystals of GaP have been grown by the synthesis, solute diffusion (SSD) method using seed crystals in carbon crucibles at temperatures around 1050°C. Growth rates of about 4 mm/day have been achieved with induction heating, three times faster than published for polycrystals. In particular the crystals show low S pit densities. Furthermore, considerably lower carrier concentrations ( n ≈ 10 15 cm -3) could be achieved than obtained in SSD polycrystalline material grown in silica crucibles. The crystals could be doped with nitrogen and sulphur by adding GaN and Ga 2S 3 to the melt. The method is a first step in the direction of a simplified LED single crystal technology without epitaxial processes.