Electrochemical random access memory (ECRAM) is a three terminal device that functions by tuning electronic conductance in functional materials through solid-state electrochemical redox reactions, and is one of several emerging device concepts that are currently being investigated in academic and industrial laboratories for enabling energy efficient brain inspired computing. Early demonstrations of nearly ideal analog switching and the realization that electrochemical ion insertion can be used to tune the electronic properties of many types of materials including transition metal oxides, layered 2D material, organic and coordination polymers, has sparked tremendous interest in ECRAM. Depending on the specific material, the resulting changes in conduction can range from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. At its core, ECRAM shares many fundamental aspects with rechargeable batteries, where ion insertion materials are used extensively for their ability to reversibly store charge and energy. Computing applications, however, present drastically different requirements: systems will require many millions of devices, scaled down to less than 100 nanometers, all while achieving reliable electronic-state tuning at scaled-up rates (~109 Hz) and endurances (>1012 cycles), and with minimal energy dissipation and noise. In my presentation, I will briefly cover the history of ECRAM, the recent progress in devices spanning various types of materials, circuits, architectures, and discuss the rich portfolio of challenging, fundamental questions and how we can harness ECRAM to realize a new paradigm for low power neuromorphic computing.