Thermodynamic calculations, or computer simulation of the equilibrium composition, offer an excellent possibility to reduce drastically the elaborate trial-and-error experimental efforts of finding the optimal preparation conditions for MOCVD processes (temperature T, pressure P, initial composition of the vapors X), to limit them only to the P– T– X field of existence of the solid to be prepared and an acceptable yield of the product. In this communication equilibrium composition was investigated for MOCVD processes of CdTe, ZnTe, HgTe and solid solutions Cd x Zn 1− x Te and Hg x Cd 1− x Te. A number of volatile organometallic compounds have been used as precursors for MOCVD growth. These are dimethylcadmium (CH 3) 2Cd, DMCd; diethylzinc (C 2H 5) 2Zn, DEZn; diisopropylzinc [CH(CH 3) 2] 2Zn, DiPZn; diethyltellurium (C 2H 5) 2Te, DETe; diisopropyltellurium [CH(CH 3) 2] 2Te, DiPTe; methylallyltellurium CH 3TeCH 2CHCH 2, MATe. A choice of the particular combination of the precursors largely depends on the desired composition of the film to be prepared, especially in cases of solid solutions Cd x Zn 1− x Te and Hg x Cd 1− x Te where the vapor pressure of the precursors is instrumental for the composition of the vapor in the reaction zone and, ultimately, for the composition x of the solid solution. Equilibrium composition for II–VI telluride MOCVD systems was investigated at temperatures up to 873 K in hydrogen and inert gas atmospheres at pressures up to 1 atm. P– T– X regions of existence were outlined for each of the five materials.
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