We have proposed and theoretically analyzed nonmetallic broadband visible-light absorbers based on alternating SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /InAs thin films on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> substrate. Compared with the conventional absorbers, the proposed SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /InAs structure can achieve excellent absorption within a smaller volume. The average absorption can exceed 97% in the wavelength range of 300-850 nm. With a two-dimensional InAs grating atop, the device can achieve the average absorption of >92% with insensitivity to light polarization and incident angles. Due to the advantages of broadband and near-unity absorption, polarization and incident angle insensitivity, controllable and mature fabrication processes, the proposed visible-light absorbers will find wide applications in solar energy harvesting, thermal emission, and water splitting.