Solar Cell Structure Research Articles

Analysis on future development of solar cells focusing on materials and devices

In recent times, solar cells have garnered significant attention due to their numerous advantages. These include continuously improving energy conversion efficiency, a simple solution preparation method, flexibility, lightweight design, wearability, suitability for ultra-lightweight space applications, and low-cost material components. Perovskite solar cells have achieved impressive efficiencies of over 25% by using high-quality perovskite films synthesized at low temperatures and by making advancements in compatible interface and electrode materials. Moreover, the stability of cells has become a major focus of research. This paper analyzes the development history, material system, device structure, challenges, and future development direction of perovskite solar cells. The unique photoelectric properties and tunable band gap of materials have made them a hot topic in the field of solar cells. In this paper, the basic characteristics and synthesis methods of perovskite materials are introduced before discussing the device structure, interface engineering, and stability of perovskite solar cells in detail. Finally, it prospects on the future development trend of perovskite solar cells.

A Comprehensive Approach to Optimization of Silicon-Based Solar Cells

In this work, we report a detailed scheme of computational optimization of solar cell structures and parameters using PC1D and AFORS-HET codes. Each parameter’s influence on the properties of the components of heterojunction silicon-based solar cells (HIT) has been thoroughly examined. The proposed approach follows a stringent sequence of steps to optimize various parameters of the studied HITs. Furthermore, we have revealed the effects of the metal-semiconductor contact, and a model of a photocell with an ohmic contact and a Schottky contact has been simulated. The optimal model of HIT for available materials has been proposed and fabricated based on the results of these simulations. A comparison of predicted and measured performance unequivocally demonstrates the efficiency of the proposed scheme in developing silicon-based HITs, providing reassurance about its practical application.

A Horizontal Double‐Sided Copper Metallization Technology Designed for Solar Cell Mass‐Production

ABSTRACTIn the international photovoltaic market, the “carbon footprint” label has received great attention, and low‐carbon footprint products are widely popular. Compared with metallic silver, copper has the characteristics of low carbon emissions and low cost, which can effectively reduce the carbon footprint. Based on this, this article reports a horizontal double‐sided copper metallization technology. This technology can not only metalize the front and back sides of various types of silicon solar cells at the same time but also has fast speed, good uniformity, and simple process, making it suitable for the industrial mass production of solar cells. This article describes the structure and manufacturing process of TOPCon solar cells patterned with an ultrashort pulse laser and metalized using this novel horizontal double‐sided copper metallization technology. In this batch, average efficiency reached above 26%.

Exploring new lead-free halide perovskites RbSnM3 (M = I, Br, Cl) and achieving power conversion efficiency > 32 %

Lead-free ABX3 inorganic perovskites, where A = Cs, Rb; BSn, Ge; and X = I, Br, Cl, have recently gained significant attention due to their remarkable optical, structural, and electronic properties, as well as their potential for solar cell applications. In this study, we thoroughly examined the optical, structural, and electronic properties of RbSnM3 (M = I, Br, Cl) perovskites through first-principles calculations and explored their application in a HTL-free solar cell structure using SCAPS-1D. Our analysis revealed that RbSnI3, RbSnBr3, and RbSnCl3 have direct band gaps of 0.828, 0.988, and 1.242 eV, respectively, using the HSE functional. The electron charge distribution indicates a strong ionic bond between Rb and the halides, as well as a significant covalent bond between Sn and the halides. Additionally, we calculated optical properties such as electron loss function, absorption coefficients, and the real and imaginary parts of the dielectric functions. We also explored the photovoltaic performance of RbSnM3 absorbers paired with a SnS2 ETL layer, investigating different thicknesses, defect densities, doping concentrations, and interface defect densities. The highest power conversion efficiencies (PCE) achieved were 26.38 %, 29.79 %, and 32.53 % for RbSnI3, RbSnBr3, and RbSnCl3 absorber layers, respectively, when paired with a SnS2 ETL. Overall, RbSnCl3 stands out as a highly promising absorber material for future photovoltaic devices, especially when combined with the SnS2 ETL layer.

Optimization of LPCVD Deposition Conditions of Silicon-Rich Silicon Nitride to Obtain Suitable Optical Properties for Photoluminescent Coating

Silicon nitride is a commonly used material for ceramic applications and in the fabrication processes of integrated circuits (ICs). It has also increased in interest from the scientific community for use as a functional coating due to its physical, mechanical, electrical, and optoelectronic properties. In particular, silicon-rich silicon nitride (SRSN) has been considered in the photovoltaic industry as a down-conversion film for solar cells. In this work, SRSN films have been obtained by the Low-Pressure Chemical Vapor Deposition (LPCVD) technique at low to moderate deposition temperatures with a variation in the precursor gas pressure ratio. The SRSN films showed a wide photoluminescence (PL) in the visible region (without a high-deposition temperature or annealing process) and suitable optical properties (refractive index and absorption in the UV) to be used as photoluminescent coating on silicon solar cells. The absence of high-deposition temperatures could preserve the original structure of silicon solar cells, once the SRSN layer was applied. In addition, control of the reactive gas pressure ratio and deposition temperature showed an influence on the refractive index, the surface roughness, and the PL emission.

Design and simulation of highly efficient CZTS/CZTSSe based thin-film solar cell

Thin-film solar cells are a substitute for more common crystalline silicon solar cells, which consist of thin semiconductor layers. Thin-film materials comprise direct bandgap and can absorb sunlight more efficiently than silicon. In this article, a double-absorber-based thin-film solar cell comprising CZTS/CZTSSe is designed and optimized through numerical simulation. The proposed solar cell structure consists of a transparent window layer made of aluminum-doped zinc oxide, followed by an intrinsic zinc oxide layer, an n-type cadmium sulfide layer, and a p-type combined absorber layer of copper zinc tin sulfide (Cu2ZnSnS4) (CZTS) and copper zinc tin sulfur-selenium alloy (Cu2ZnSn(S,Se4)) (CZTSSe). The structure is further optimized by introducing two interfacial layers between CZTSSe/CZTS and CZTS/CdS. The highest conversion efficiency is achieved by adjusting the thicknesses of the layers, the doping densities in different layers, and the defect densities in the two absorber layers. The optimized model, with a total thickness of 2.01 μm, demonstrates an open-circuit voltage (Voc) of 0.7669 V, a short-circuit current (Jsc) of 48.57740 mA/cm2, a fill factor (FF) of 70.61%, and efficiency (η) of 26.31%. These results suggest that CZTS is a promising candidate for replacing other thin-film photovoltaic materials, such as CdTe. The proposed double-absorber thin-film solar cell optimizes doping concentration, thickness, and defect density to enhance performance metrics and efficiency while utilizing non-toxic materials to promote cost-effective, environmentally friendly energy solutions.

Achieving bifacial photovoltaic performance in PTB7-based organic solar cell by integrating transparent contact for emerging semi-transparent applications

In this study, the design, fabrication and detailed analysis of semi-transparent bifacial organic solar cells (ST-OSC) based on MoO3/Ag/WO3 (10/dm/dod nm) dielectric/metal/dielectric (DMD) transparent contact system integrated with PTB7 polymer were investigated. The study emphasizes the importance of designing transparent contact systems to optimize the solar cells’ transparency (average visible transmittance, AVT), color rendering (color rendering index, CRI), efficiency (power conversion efficiency, PCE), and bifaciality. The performance of three distinct configurations was examined in the AVTmax (47.14% AVT, 3.93% PCE), (CRIext)max (23.82% AVT, 6.21% PCE), and Extreme Color (26.34% AVT, 5.81% PCE). The theoretically predicted AVTs for these configurations were 48.75%, 22.29%, and 25.15%, respectively. The strong agreement between theoretical and observed outcomes confirmed the accuracy of the Transfer Matrix Model (TMM). Furthermore, the assessment of bifaciality performance exhibited that the AVTmax had a bifaciality factor of 0.94, with a PCE of 3.67% under top illumination and 3.93% under bottom illumination. The high bifaciality of the structure designed with TMM to maximize the AVT demonstrates the value of calculations prior to solar cell structure fabricating and the possibility of constructing high bifaciality structures using this technique.

Solar Cells: Applications and Current Opinion

Due to the manufacturing process, silicon-based solar cells have conquered the marketplace, but their cost is not economic. As a result, thin-film manufacturing was done with low-cost, appealing materials generated using less expensive, scalable, and manufacturable procedures. The motivation behind this work is to develop low-cost, high-efficiency solar cells using chemical and electrochemical techniques. Thin film solar cell structure could be presented as glass, Cu structure, CdS window material, TCO, and CdTe absorber material. The absorber and window materials include layers such as CdS and CdTe, while Cu and TCO are the back and front contacts. By using CSS and chemical bath deposition (CBD), The usual method of making this structure is to grow window (CdS) and absorber (CdTe) materials. CBD is a batch method that generates enormous quantities of Cd-containing waste solutions each time, adding to the production process's high cost. Sputtering or PVD, including high vacuum conditions, is performed with back and front contacts. This research program focuses on developing an "all chemical-solar cell" structure. This study showed that CdS and CdTe materials may be employed and electrodeposited in thin-film solar cell systems, CBD and electroless techniques. Furthermore, the back and front contacts can be coated using the CdS electrolytic bath, which is utilized for seven months without being discarded, but the CBD bath lasts 2-3 days. The deposition rate of the thin films was about 50 - 100 times greater than reported values in the literature. The efficiency of the manufactured cells was between 1 and 6%, which was reduced by the duration of time. Twenty days after manufacturing a TCO, CdS, CdTe, the short-circuit current, Cu-Ag solar cell, and open-circuit voltage deposited by all chemical and electrochemical deposition techniques were 0.8 mA/cm2 and 8.8 mV, respectively. However, consistency and reproducibility remain unresolved. The growth of CdTe nanocrystalline thin film is one of the reasons it has been identified as having nanosized tracks. High-quality CdTe layers should be developed, or in cadmium solar cells, its layered structure is the form of a cadmium window and a zinc oxide buffer layer to increase the consistency of the solar cell efficiency.

A strategy for achieving high-performance single layer polymer photodetectors through dark current reduction using PMMA additives

Suppressing dark current density is crucial for optimizing the performance of organic photodetectors (PDs), particularly in terms of detectivity (D∗) and linear dynamic range (LDR). Organic PDs often utilize the bulk heterojunction structure of organic solar cells to significantly increase photocurrent. However, unlike solar cells, which are unaffected by dark current, photodetectors' performance is substantially limited by it. The interconnected network of bulk heterojunctions leads to a noticeable increase in dark current, thus degrading device performance. Typically, reducing dark current involves adding a modification layer or using multilayer planar heterojunctions, which effectively reduce dark current but often delay response speed and complicate manufacturing. This study presents an alternative approach by incorporating a small concentration of PMMA into single-layer polymer photodetectors, significantly reducing dark current without affecting photocurrent. For this single-layer polymer PD, an ultra-low dark current density of 1.25 × 10−8 A/cm2, a high Dsh∗ of 2.74 × 1012 Jones, an LDR of 120.5 dB, and a fast response time with 1.6 μs were achieved. The capacitance-voltage (C-V), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements revealed that the PMMA additive reduces internal defects, increases bulk resistance, optimizes phase separation, and enhances carrier transport efficiency. The improved device performances are attributed to a more efficient vertical arrangement of the donor-acceptor interface and carrier channels, thus reducing carrier recombination loss. These findings offer a new direction for fabricating high-performance single-layer photodetectors.

Harnessing SWCNT absorber based efficient CH3NH3PbI3 perovskite solar cells

This paper investigates the effect of incorporating a single-walled carbon nanotubes (SWCNTs) layer into the perovskite solar cell (PSC) structure as an effective technique to boost energy harvesting. The proposed PSC structure utilizes the SWCNTs layer underneath the CH3NH3PbI3 perovskite layer as an absorbing layer forming a novel design of (ITO/SnO2/CH3NH3PbI3/SWCNTs/NiOx/C) half tandem PSC structure. The suggested PSC structure is numerically analyzed using finite element method (FEM). The effects of varying thickness and doping concentration of the added layer and the material of rear electrode are investigated to maximize the power conversion efficiency (PCE) of the suggested PSC. Results of the 3D opto-electrical study and the energy bandgap analysis confirm that utilizing a 680 nm SWCNTs layer with doping concentration of 1.1 × 1020 cm-3 beneath a 150 nm perovskite layer enhances the PCE and short circuit current density (JSC) to 25.6%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$25.6\\%$$\\end{document} and 31.201mA/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$31.201 mA/{cm}^{2}$$\\end{document}, respectively due to the improving of the PSC absorption by 27.65%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$27.65\\%$$\\end{document}. Higher performance of the proposed PSC has been achieved by using gold (Au) electrode instead of carbon (C) one, causing total enhancement of PCE and JSC of 6.185%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$6.185\\%$$\\end{document} and 9.18mA/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$9.18\\;mA/cm^{2}$$\\end{document}, respectively over their values for (ITO/SnO2/CH3NH3PbI3/P3HT/NiOx/C) structure reported in previously published literature. The proposed design can be considered as an efficient alternative to the conventional PSC owing to its higher performance and reduced toxicity.

Role of La2CuO4 as Buffer Layer for a Significant Improvement of the Performance of TiO2/Cu2O Based All‐Oxide Solar Cell: A SCAPS‐1D Numerical Analysis

AbstractCurrently, low‐bandgap Mott‐insulating materials are the most promising buffer layers (BLs) for solar power conversion efficiency, unlike organic‐halide or lead‐containing perovskite materials. They can reduce interfacial recombination by field effect passivation of heterojunctions while maintaining cost‐effectiveness and high thermal and electrical stability. Moreover, it is expected to obtain a high quantum efficiency due to multiple carrier generation caused by impact ionization from a single incident photon. This study uses the SCAPS‐1D simulator to estimate and improve the efficiency of Cu2O‐based solar cells using Mott insulator La2CuO4 (LCO) as a BL in both ideal and non‐ideal conditions. The simulations examine how BL thickness, carrier concentration, and defect density affect device performance. Also, different metal contact work functions and working temperatures are examined to improve cell performance. Considering all optimisation parameters in ideal conditions, Au/Cu2O/TiO2/Nb: STO solar cell structure without a BL has a PCE of 11.27%, while Au/Cu2O/LCO/TiO2/Nb: STO has 28.11%. By incorporating non‐idealities, the simulated solar cell can simulate actual conditions. The impact of each non‐ideality is studied in detail. These findings suggest that Mott insulating buffer materials have great potential for creating high‐efficiency photovoltaic (PV) devices, presenting a new avenue for research.

Performance optimization of FASnI3 based perovskite solar cell through SCAPS-1D simulation

The article provides a detailed look at the fabrication of a high-performance structure for FASnI3-based perovskite solar cells (PSCs). The FTO/CeO2/FASnI3/CuI/Au structure is designed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) to investigate the fabricated PSC's performance. This investigation's main objective is to improve PSCs performance by using non-traditional Hole transport layer (HTL) and Electron transport layer (ETL) materials, such as CeO2 and CuI, which have both been the subject of limited research. Moreover, the investigation seeks to determine the impact of several perovskite layer characteristics, including bandgap (Eg), electron affinity (χ), acceptor density (NA), thickness (t), and defect density (Nt). Additionally, this study also investigates the effect of various back contact work functions. Significant improvements in solar cell parameters, such as power conversion efficiency (PCE) from 22.06% to 24.87% and current density (Jsc) from 26.0274 to 30.675 mA/cm2, were observed by optimizing the device's parameters. In contrast, the fill factor (FF) and open circuit voltage (Voc) decreased their values from 86.13% to 87.10% and 0.9843 to 0.9308 V, respectively. These findings show that our designed solar cell structure performs better than those with conventionally used HTLs and ETLs. Consequently, this study highlights the potential benefits of lead-free PSCs and presents fresh opportunities for their development and use in various solar applications.

Modelling and Numerical Evaluation of Photovoltaic Parameters of a Highly Efficient Perovskite Solar Cell Based on Methylammonium Tin Iodide.

Designing a high performance solar cell structure requires the understanding of material innovation, device engineering, charge behavior, operation characteristics and efficient photoconversion of light to generate electricity. This study offers a detailed numerical evaluation of the device physics in a highly efficient methylammonium-based perovskite solar cell (PSC) of the configuration, FTO/WO3/CH₃NH₃SnI₃/GO/Fe. Utilizing the SCAPS-1D device simulator, an impressive open-circuit voltage (Voc) of 1.3184 V, short-circuit current density (Jsc) of 35.10 mA/cm², Fill factor (FF) of 78.38%, and power conversion efficiency (PCE) of 36.24% were achieved. The model cell exhibits a robust photon capture of 100% quantum efficiency between 360 and 750 nm. The study also presents temperature-dependent band alignment diagram which posted a built-in potential (Vbi) of 0.62 eV. The Vbi at 400 K was found to be 0.58 eV indicating that the model cell exhibits a decent temperature tolerance, and can retain approximately 93% of its power at 400 K. Through Mott-Schottky capacitance analysis, deeper insights into the space-charge region are inferred, while recombination-generation investigations emphasize the significance of electronic properties in optimizing device performance. This paper, therefore, lays the foundation for future studies, offering clear pathways for device optimization and identifying key areas that require further investigation.

Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study

Abstract This study explores the performance enhancement of an innovative multi-layer solar cell structure using the SCAPS-1D (Solar Cell Capacitance Simulator in One Dimension) software. We aim to improve the efficiency of a solar cell structure comprising ZnO/ZnSe/CZTSe/CuInSe2/CZTSSe/Mo by incorporating CZTSe as the upper absorber layer, CuInSe2 as the main absorber layer, and CZTSSe as a back surface field (BSF) layer. Initially, we compare the performance of three different configurations by analyzing their J-V characteristics. For the best performing structure, we further examine the external quantum efficiency (EQE) spectrum. We then evaluate various window (ZnO, ZnMgO, SnO2, Zn2SnO4) and buffer (ZnSe, ZrS2, SnS2, In2S3) materials, identifying ZnO and ZrS2 as the most effective for achieving high current density and efficiency. Through detailed simulations, we determine the optimal thicknesses for CZTSSe (0.2 µm), CZTSe (0.4 µm), and CuInSe2 (3.2 µm). Additionally, by optimizing the acceptor density to 1020 cm−3, we significantly enhance the performance of both CZTSe and CZTSSe layers. Temperature management is shown to be crucial, with the highest efficiency observed at 300 K. As a result of these optimizations, the solar cell structure achieves a remarkable efficiency of 35.38%. Furthermore, we compare our results with existing literature to highlight the advancements made in this study. These findings underscore the importance of material selection and structural optimization in developing high-efficiency solar cells and provide a framework for future advancements in photovoltaic technology.

Impact of PTQ11 polymer doping on the optoelectronic and structural properties of a CH3NH3PbI3 perovskite photovoltaic cell

At present, one of the most swiftly progressing domains in solar photovoltaics is perovskite-based solar cells. Chemical modification of perovskites with foreign atoms represents a potentially fruitful approach to customizing material characteristics with the aim of enhancing the functionality and durability of solar cells. In this study, we first documented the inverted structure of PTQ11 polymer-doped perovskite solar cells composed of CH3NH3PbI3 (MAPbI3) perovskite thin film. The findings indicate that the active layer morphology is enhanced through PTQ11 doping, leading to rapid suppression of photoluminescence and delayed carrier recombination. The XRD and Raman spectral analyses revealed the crystalline, single phase, tetragonal, and highly pure MAPbI3 thin film with the preferred (220) orientation. Energy gaps ranging from 1.596 eV to 1.577 eV and absorption coefficients exceeding 105 cm−1 were characteristics of the doped thin film, which varied with the doping concentration. A transition occurred on the perovskite film’s surface to form smooth, compressed pores measuring 1.63 µm in diameter. This modification potentially enhanced the photovoltaic performance by facilitating charge transport. With an open circuit voltage of 1.11 V, a power conversion efficiency (PCE) of 18.24 %, a short-circuit current density of 22.32 mA/cm2, and a fill factor of 73.65 %, the PTQ11-9 mg/mL sample constituted the solar cell device base. Hence, the findings suggest that the doping of PTQ11 polymer represents a potentially effective approach to improve the performance of perovskite solar cells.

Enhancing light absorption in ultra-thin perovskite solar cells using plasmonic gold nanoparticle clusters

Perovskite solar cells with ultra-thin absorber layers offer potential cost savings in manufacturing, but their reduced thickness can limit light absorption and efficiency. This work explores using plasmonic gold nanoparticles as a light-trapping strategy to compensate for lower absorption in ultra-thin perovskite devices. Numerical simulations investigate embedding 25 nm radius gold nanoparticles within the 200 nm thick perovskite active layer to boost optical absorption through near-field enhancement and light scattering effects. The solar cell structure incorporating these plasmonic nanoparticles achieves a substantially higher short-circuit current density of 23.10 mA cm−2 compared to 18.70 mA cm−2 for a reference cell without nanoparticles. This study provides design approaches for realizing high-efficiency yet cost-effective ultra-thin perovskite photovoltaics by harnessing plasmonic light-trapping techniques. The results display methodologies to improve photon absorption and power conversion in thin-film perovskite devices through strategic nanoparticle integration.

Photoanode Optimization on Dye-Sensitized Solar Cell Structure using Random Forest Method

Photoanode Optimization on Dye-Sensitized Solar Cell Structure using Random Forest Method

A Review of CIGS Thin Film Semiconductor Deposition via Sputtering and Thermal Evaporation for Solar Cell Applications

Over the last two decades, thin film solar cell technology has made notable progress, presenting a competitive alternative to silicon-based solar counterparts. CIGS (CuIn1−xGaxSe2) solar cells, leveraging the tunable optoelectronic properties of the CIGS absorber layer, currently stand out with the highest power conversion efficiency among second-generation solar cells. Various deposition techniques, such as co-evaporation using Cu, In, Ga, and Se elemental sources, the sequential selenization/sulfidation of sputtered metallic precursors (Cu, In, and Ga), or non-vacuum methods involving the application of specialized inks onto a substrate followed by annealing, can be employed to form CIGS films as light absorbers. While co-evaporation demonstrates exceptional qualities in CIGS thin film production, challenges persist in controlling composition and scaling up the technology. On the other hand, magnetron sputtering techniques show promise in addressing these issues, with ongoing research emphasizing the adoption of simplified and safe manufacturing processes while maintaining high-quality CIGS film production. This review delves into the evolution of CIGS thin films for solar applications, specifically examining their development through physical vapor deposition methods including thermal evaporation and magnetron sputtering. The first section elucidates the structure and characteristics of CIGS-based solar cells, followed by an exploration of the challenges associated with employing solution-based deposition techniques for CIGS fabrication. The second part of this review focuses on the intricacies of controlling the properties of CIGS-absorbing materials deposited via various processes and the subsequent impact on energy conversion performance. This analysis extends to a detailed examination of the deposition processes involved in co-evaporation and magnetron sputtering, encompassing one-stage, two-stage, three-stage, one-step, and two-step methodologies. At the end, this review discusses the prospective next-generation strategies aimed at improving the performance of CIGS-based solar cells. This paper provides an overview of the present research state of CIGS solar cells, with an emphasis on deposition techniques, allowing for a better understanding of the relationship between CIGS thin film properties and solar cell efficiency. Thus, a roadmap for selecting the most appropriate deposition technique is created. By analyzing existing research, this review can assist researchers in this field in identifying gaps, which can then be used as inspiration for future research.

Efficient window layer modification enabling the remarkable FF and efficiency improvement of kesterite solar cell

As the core structure of kesterite thin-film solar cell (TFSC), the nature of N-type functional layer and its interface is a key issue impacting device performance, typically its influence on carrier recombination and electron charge transportation. Here, a modified window layer to tailor N-type bulk and its interface properties for efficiency carrier collection and device performance is incorporated by co-sputtering ZnO and SiO2. Research has found that the modified window layer not only has an excellent wide optical spectrum with high transmittance, enabling additional photon harvesting and short-wave absorption, but also modulates the energy band position for better band alignment to facilitate charge transportation, ensuring higher conductivity. Simultaneously, the significantly reduced carrier recombination and increased uniformity of the device further accelerate charge efficient collection and enhance filling factor (FF). Consequently, the modified window layer of kesterite TFSC enables a remarkable efficiency improvement from 8.4% to 12.0% with a boosted FF from 61% to 73%. These novel results provide the inherent physical origin for improving the photovoltaic performance of kesterite TFSC by appropriate modification of ZnO:SiO2 window layer and open up an effective and feasible strategy, which can also be applied to other optoelectronic devices.

C60/CZTS Junction Combination to Improve the Efficiency of CZTS-Based Heterostructure Solar Cells: A Numerical Approach

This work presents a copper zinc tin sulfide (CZTS)-based solar cell structure (AI/ITO/C60/CZTS/SnS/Pt) with C60 as a buffer layer, developed using the SCAPS-1D simulator by optimizing each parameter to calculate the output. Optimizing the parameters, the acceptor concentration and thickness were altered from 6.0 × 1015 cm−3 to 6.0 × 1018 cm−3 and 1500 nm to 3000 nm, respectively. Although, in this simulator, we can tune the value for the acceptor concentration to 6.0 × 1022, higher doping might present an issue regarding adjustment in the physical experiment. Thus, tunable parameters need to be chosen according to the reliability of the experimental work. The defect density varied from 1.0 × 1014 cm−3 to 1.0 × 1017 cm−3 and the auger hole/electron capture coefficient was determined to be 1.0 × 10−26 cm6 s−1 for the maintenance of the minorities in theoretical to quasi-proper experimental measurements. Although the temperature was intended to be kept near room temperature, this parameter was varied from 290 K to 475 K to investigate the effects of the temperature on this cell. The optimization of the proposed structure resulted in a final acceptor concentration of 6.0 × 1018 cm−3 and a thickness of 3000 nm at a defect density of 1.0 × 1015 cm−3, which will help to satisfy the desired experimental performance. Satisfactory outcomes (VOC = 1.24 V, JSC = 27.03 mA/cm2, FF = 89.96%, η = 30.18%) were found compared to the previous analysis.